DE10082909T1 - Nichtflüchtiger Ferroelektrischer Speicher und Verfahren zu seiner Herstellung - Google Patents

Nichtflüchtiger Ferroelektrischer Speicher und Verfahren zu seiner Herstellung

Info

Publication number
DE10082909T1
DE10082909T1 DE10082909T DE10082909T DE10082909T1 DE 10082909 T1 DE10082909 T1 DE 10082909T1 DE 10082909 T DE10082909 T DE 10082909T DE 10082909 T DE10082909 T DE 10082909T DE 10082909 T1 DE10082909 T1 DE 10082909T1
Authority
DE
Germany
Prior art keywords
manufacture
ferroelectric memory
volatile ferroelectric
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10082909T
Other languages
English (en)
Other versions
DE10082909B4 (de
Inventor
Hiroshi Ishiwara
Koji Aizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Technology Academic Research Center
Original Assignee
Semiconductor Technology Academic Research Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Technology Academic Research Center filed Critical Semiconductor Technology Academic Research Center
Publication of DE10082909T1 publication Critical patent/DE10082909T1/de
Application granted granted Critical
Publication of DE10082909B4 publication Critical patent/DE10082909B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
DE10082909T 1999-08-26 2000-08-24 Nichtflüchtige ferroelektrische Speicherzelle, nichtflüchtiger ferroelektrischer Speicher und Verfahren zu seiner Herstellung Expired - Fee Related DE10082909B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23994399A JP3390704B2 (ja) 1999-08-26 1999-08-26 強誘電体不揮発性メモリ
JP11/239943 1999-08-26
PCT/JP2000/005719 WO2001017017A1 (fr) 1999-08-26 2000-08-24 Memoire ferroelectrique remanente et son procede de fabrication

Publications (2)

Publication Number Publication Date
DE10082909T1 true DE10082909T1 (de) 2001-08-30
DE10082909B4 DE10082909B4 (de) 2007-01-25

Family

ID=17052139

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10082909T Expired - Fee Related DE10082909B4 (de) 1999-08-26 2000-08-24 Nichtflüchtige ferroelektrische Speicherzelle, nichtflüchtiger ferroelektrischer Speicher und Verfahren zu seiner Herstellung

Country Status (6)

Country Link
US (1) US6420745B2 (de)
JP (1) JP3390704B2 (de)
KR (1) KR100415741B1 (de)
DE (1) DE10082909B4 (de)
TW (1) TW465084B (de)
WO (1) WO2001017017A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4938921B2 (ja) * 2000-03-16 2012-05-23 康夫 垂井 トランジスタ型強誘電体不揮発性記憶素子
JP2002289805A (ja) * 2001-03-27 2002-10-04 Yasuo Tarui トランジスタ型強誘電体不揮発性記憶素子
JP4726440B2 (ja) * 2004-06-25 2011-07-20 日本放送協会 有機又は無機トランジスタ及びその製造方法並びに画像表示装置
JP4711063B2 (ja) * 2005-09-21 2011-06-29 セイコーエプソン株式会社 半導体装置
CA2662958C (en) 2006-09-13 2015-01-13 Vascular Insights Llc Vascular treatment device
JP2019179827A (ja) * 2018-03-30 2019-10-17 ソニーセミコンダクタソリューションズ株式会社 半導体記憶装置及び積和演算装置
DE102020127584B4 (de) * 2020-05-28 2024-05-29 Taiwan Semiconductor Manufacturing Co., Ltd. Dreidimensionale speichervorrichtung mit ferroelektrischemmaterial

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02199861A (ja) * 1989-01-30 1990-08-08 Hitachi Ltd 強誘電体メモリ
JPH07105453B2 (ja) * 1989-07-13 1995-11-13 株式会社東芝 半導体記憶装置のセル構造
JPH04354389A (ja) * 1991-05-31 1992-12-08 Olympus Optical Co Ltd 強誘電体メモリセル
JP3226989B2 (ja) * 1992-11-17 2001-11-12 オリンパス光学工業株式会社 強誘電体メモリ
US5581101A (en) * 1995-01-03 1996-12-03 International Business Machines Corporation FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures
JPH08204032A (ja) * 1995-01-20 1996-08-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH1027856A (ja) * 1996-07-11 1998-01-27 Hitachi Ltd 不揮発性半導体記憶装置とその製造方法
JP2838196B2 (ja) * 1996-08-20 1998-12-16 東京工業大学長 単一トランジスタ型強誘電体メモリへのデータ書込み方法
DE19637389C1 (de) * 1996-09-13 1997-10-16 Siemens Ag Verfahren zur Herstellung einer DRAM-Zellenanordnung
JPH10242410A (ja) * 1996-12-26 1998-09-11 Sony Corp 半導体メモリセル及びその作製方法
JP3272979B2 (ja) * 1997-01-08 2002-04-08 株式会社東芝 半導体装置
US5838205A (en) * 1997-02-18 1998-11-17 International Business Machines Corporation Variable-speed phase-locked loop system with on-the-fly switching and method therefor
JP4080050B2 (ja) * 1997-03-07 2008-04-23 シャープ株式会社 強誘電体メモリセル、半導体構造およびそれらの製造方法
JPH118362A (ja) * 1997-06-18 1999-01-12 Sanyo Electric Co Ltd 誘電体素子、誘電体メモリ、誘電体メモリの製造方法および強誘電体メモリの動作方法
KR19990015719A (ko) * 1997-08-08 1999-03-05 윤종용 비파괴 읽기 박막트랜지스터 강유전체 랜덤 액세스 메모리및 그 제조 방법과 구동 방법
KR19990032085A (ko) * 1997-10-16 1999-05-06 윤종용 측방향 분극 강유전체 랜덤 액세스 메모리 및 그 제조방법과 구동방법
JPH11177038A (ja) * 1997-12-16 1999-07-02 Asahi Chem Ind Co Ltd Ｍｆｍｉｓ型強誘電体記憶素子とその製造方法
JP3239109B2 (ja) 1998-08-28 2001-12-17 株式会社半導体理工学研究センター 強誘電体不揮発性メモリとその読み出し方法
JP4938921B2 (ja) * 2000-03-16 2012-05-23 康夫 垂井 トランジスタ型強誘電体不揮発性記憶素子

Also Published As

Publication number Publication date
US6420745B2 (en) 2002-07-16
KR100415741B1 (ko) 2004-01-24
WO2001017017A1 (fr) 2001-03-08
JP3390704B2 (ja) 2003-03-31
TW465084B (en) 2001-11-21
US20010024391A1 (en) 2001-09-27
DE10082909B4 (de) 2007-01-25
JP2001068633A (ja) 2001-03-16
KR20010089349A (ko) 2001-10-06

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20130301