DE01998054T1 - Zusammensetzung für das chemisch-mechanisch planarisieren (cmp) von kupfer, tantal und tantal nitrid - Google Patents

Zusammensetzung für das chemisch-mechanisch planarisieren (cmp) von kupfer, tantal und tantal nitrid Download PDF

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DE01998054T1
DE01998054T1 DE2001998054 DE01998054T DE01998054T1 DE 01998054 T1 DE01998054 T1 DE 01998054T1 DE 2001998054 DE2001998054 DE 2001998054 DE 01998054 T DE01998054 T DE 01998054T DE 01998054 T1 DE01998054 T1 DE 01998054T1
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etching solution
planarizing
acid
group
mixtures
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Fan Zhang
Daniel Towery
Joseph Levert
Shyama Mukherjee
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Honeywell International Inc
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Honeywell International Inc
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Ätzlösung zum Planarisieren einer Cu/Ta/TaN-Oberfläche, enthaltend:
a) einen oxidierenden Reaktanten aus der Gruppe, bestehend aus (NH4)2S2O8, H2O2, HNO3 und Gemischen davon, und
b) einen Coreaktanten aus der Gruppe, bestehend aus H3PO4, H2SO4, HNO3, Oxalsäure, Essigsäure, organischen Säuren und Gemischen davon, und
c) andere Additive aus der Gruppe, bestehend aus HCl, aliphatischen Alkoholen, Butylhydroxytoluol, Agidol-2, 2,6-Di-tert.-butyl-4-[(dimethylamino)methyl]phenol, 2,6-Di-tert.-4-N,N-dimethylaminomethylphenol, Borax, Ethylenglykol, ZnSO4, Methanol, Propanol, Poly(oxyethylen)laurylether, Äpfelsäure, HOOC(CX2)nCOOH, worin X = OH, Amin, H und n = 1–4, 3% Weinsäure, 1% Ethylenglykol, 1,2,4-Triazol, 1,2,3-Triazol, Tetrazol, nichtionischem Tensid, Ethanol, Trifluorethanol, SiF6, Tensid in Form von organischem Salz, Polyvinylalkohol, Diphenylsulfamidsäure, Natriumoxalat, Benzotriazol, Natriumlignosulfonat, Glykol, Gelatine, Carboxymethylcellulose, Aminen, Schwermetallsalzen, Cu- und Ta-Salzen, KCl, CuCl2, SnCl2, Propylenglykol, 2-Ethylhexylamin, Kupfer carbonat, niedermolekularen Alkoholen, Glykolen, Phenolen, aliphatischen Alkoholen, Polyvinylalkoholen, anionischen Tensiden, kationischen Tensiden, auf Fluorkohlenwasserstoffen basierenden Tensiden, nichtionischen Tensiden, die auf bestimmten Materialien bevorzugt haften und dadurch die chemische Reaktivität modifizieren, Polyvinylalkohol-Lösungsstabilisatoren und Spezies, die die spontane Zersetzung...

Claims (19)

  1. Ätzlösung zum Planarisieren einer Cu/Ta/TaN-Oberfläche, enthaltend: a) einen oxidierenden Reaktanten aus der Gruppe, bestehend aus (NH4)2S2O8, H2O2, HNO3 und Gemischen davon, und b) einen Coreaktanten aus der Gruppe, bestehend aus H3PO4, H2SO4, HNO3, Oxalsäure, Essigsäure, organischen Säuren und Gemischen davon, und c) andere Additive aus der Gruppe, bestehend aus HCl, aliphatischen Alkoholen, Butylhydroxytoluol, Agidol-2, 2,6-Di-tert.-butyl-4-[(dimethylamino)methyl]phenol, 2,6-Di-tert.-4-N,N-dimethylaminomethylphenol, Borax, Ethylenglykol, ZnSO4, Methanol, Propanol, Poly(oxyethylen)laurylether, Äpfelsäure, HOOC(CX2)nCOOH, worin X = OH, Amin, H und n = 1–4, 3% Weinsäure, 1% Ethylenglykol, 1,2,4-Triazol, 1,2,3-Triazol, Tetrazol, nichtionischem Tensid, Ethanol, Trifluorethanol, SiF6, Tensid in Form von organischem Salz, Polyvinylalkohol, Diphenylsulfamidsäure, Natriumoxalat, Benzotriazol, Natriumlignosulfonat, Glykol, Gelatine, Carboxymethylcellulose, Aminen, Schwermetallsalzen, Cu- und Ta-Salzen, KCl, CuCl2, SnCl2, Propylenglykol, 2-Ethylhexylamin, Kupfer carbonat, niedermolekularen Alkoholen, Glykolen, Phenolen, aliphatischen Alkoholen, Polyvinylalkoholen, anionischen Tensiden, kationischen Tensiden, auf Fluorkohlenwasserstoffen basierenden Tensiden, nichtionischen Tensiden, die auf bestimmten Materialien bevorzugt haften und dadurch die chemische Reaktivität modifizieren, Polyvinylalkohol-Lösungsstabilisatoren und Spezies, die die spontane Zersetzung von Oxidationsmitteln inhibieren, Netzmitteln und Gemischen davon.
  2. Ätzlösung nach Anspruch 1, ferner enthaltend: eine Spezies aus der Gruppe, bestehend aus CuCl, FeCl, FeCl3 und Gemischen davon.
  3. Ätzlösung zum Planarisieren einer Cu/Ta/TaN-Oberfläche, enthaltend: Spezies aus der Gruppe, bestehend aus NaClO3, FeNO3, (NH4)2S2O8, CuNH4Cl3, Na2S2O8, K2S2O5, NH4F, CuSO4, NH4OH, KOH, H2O2, Cu(NO3)2, Natrium-EDTA-Salz von Netzmittel und Gemischen davon.
  4. Ätzlösung zum Planarisieren einer Cu/Ta/TaN-Oberfläche, enthaltend: Spezies aus der Gruppe, bestehend aus HF, HNO3, H2O2, H2SO4, Milchsäure und Gemischen davon.
  5. Ätzlösung zum Planarisieren einer Cu/Ta/TaN-Oberfläche, enthaltend: Spezies aus der Gruppe, bestehend aus NaOH; KOH, NH4OH, H2O2 und Gemischen davon.
  6. Ätzlösung zum Planarisieren einer Cu/Ta/TaN-Oberfläche, enthaltend: EDTA, NH4OH und H2O2 in wäßriger Lösung.
  7. Ätzlösung zum Planarisieren einer Cu/Ta/TaN-Oberfläche, enthaltend: Citronensäure, Erythorbinsäure und Triethanolamin in wäßriger Lösung.
  8. Ätzlösung zum Planarisieren einer Cu/Ta/TaN-Oberfläche, enthaltend: Trinatriumcitrat, Triethanolamin und Natriumnitrat in wäßriger Lösung.
  9. Ätzlösung zum Planarisieren einer Cu/Ta/TaN-Oberfläche, enthaltend: H2SO4, H2O2, Molybdänsalz und Phenolsulfonsäure in wäßriger Lösung.
  10. Ätzlösung zum Planarisieren einer Cu/Ta/TaN-Oberfläche, enthaltend: Mineralsäure und Molybdänsalz.
  11. Ätzlösung zum Planarisieren einer Cu/Ta/TaN-Oberfläche nach Anspruch 1, ferner enthaltend: Schleifteilchen aus der Gruppe, bestehend aus SiO2, Al2O3, metallischen oder festen, elementaren Teilchen, Polymerteilchen, Oxiden, Carbiden, Fluoriden, Carbonaten, Boriden, Nitriden und Hydroxyden von Al, Ag, Au, Ca, Ce, Cr, Cu, Fe, Gd, Ge, La, In, Hf, Mn, Mg, Ni, Nd, Pb, Pt, P, Sb, Sc, Sn, Tb, Ti, Ta, Th, Y, W, Zn und Zr und Gemischen davon.
  12. Ätzlösung nach Anspruch 11, bei der die Schleifteilchen beschichtet sind.
  13. Ätzlösung nach Anspruch 12, bei der es sich bei der Beschichtung um eine chemisch aktive Spezies handelt.
  14. Ätzlösung nach Anspruch 11, bei der es sich bei der Beschichtung um CeO2 handelt.
  15. Ätzlösung nach Anspruch 11, bei der die Teilchen nach dem Solverfahren hergestellt werden.
  16. Ätzlösung nach Anspruch 11, bei der die Teilchengröße im Bereich von ungefähr 4 Nanometer bis ungefähr 5 Mikrometer liegt.
  17. Ätzlösung nach Anspruch 11, bei der die Teilchengröße unter ungefähr 5 Mikrometer liegt.
  18. Ätzlösung zum Planarisieren einer Cu/Ta/TaN-Oberfläche nach Anspruch 1, bei der zu den oxidierenden Reaktanten ungefähr 50 Volumenteile bis ungefähr 70 Volumenteile konzentrierte, wäßrige H3PO4 und ungefähr 24 Volumenteile bis ungefähr 40 Volumenteile konzentrierte, wäßrige Essigsäure und ungefähr 3 Volumenteile bis ungefähr 10 Volumenteile konzentrierte, wäßrige HNO3 gehören.
  19. Ätzlösung nach Anspruch 18, ferner enthaltend: ungefähr 1 Volumenteil bis ungefähr 15 Volumenteile konzentriertes, wäßriges HF.
DE2001998054 2000-12-20 2001-12-18 Zusammensetzung für das chemisch-mechanisch planarisieren (cmp) von kupfer, tantal und tantal nitrid Pending DE01998054T1 (de)

Applications Claiming Priority (3)

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US745266 2000-12-20
US09/745,266 US6630433B2 (en) 1999-07-19 2000-12-20 Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
PCT/US2001/048867 WO2002059393A1 (en) 2000-12-20 2001-12-18 Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride

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US (2) US6630433B2 (de)
EP (1) EP1352109A1 (de)
JP (1) JP2004524440A (de)
KR (1) KR20030061461A (de)
CN (1) CN1738928A (de)
CA (1) CA2431591A1 (de)
DE (1) DE01998054T1 (de)
ES (1) ES2209676T1 (de)
WO (1) WO2002059393A1 (de)

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