ES2209676T1 - Composicion para la planarizacion quimica y mecanica de cobre, tantalo y nitruro de tantalo. - Google Patents

Composicion para la planarizacion quimica y mecanica de cobre, tantalo y nitruro de tantalo.

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Publication number
ES2209676T1
ES2209676T1 ES01998054T ES01998054T ES2209676T1 ES 2209676 T1 ES2209676 T1 ES 2209676T1 ES 01998054 T ES01998054 T ES 01998054T ES 01998054 T ES01998054 T ES 01998054T ES 2209676 T1 ES2209676 T1 ES 2209676T1
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Prior art keywords
acid
tan
mixtures
planning
engraving solution
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ES01998054T
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English (en)
Inventor
Fan Zhang
Daniel Towery
Joseph Levert
Shyama Mukherjee
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Honeywell International Inc
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Honeywell International Inc
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Publication of ES2209676T1 publication Critical patent/ES2209676T1/es
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Una solución de grabado para la planarización de una superficie de Cu/Ta/TaN que comprende: a) una sustancia reaccionante oxidante seleccionada del grupo constituido por (NH4)2S2O8, H2O2, HNO3 y mezclas de los mismos; y, b) una sustancia correaccionante seleccionada del grupo constituido por H3PO4, H2SO4, HNO3, ácido oxálico, ácido acético, ácidos orgánicos y mezclas de los mismos; y, c) otros aditivos seleccionados del grupo constituido por HCl, alcoholes alifáticos, hidroxitolueno butilado, Agidol-2, 2, 6-di-terc-butil-4[(dimetilamino)metil]fenol, 2, 6-di-terc-4-N, N-dimetilaminometilfenol, bórax, etilenglicol, ZnSO4, metanol, propanol, poli(oxietileno)lauril-éter, ácido málico, HOOC(CX2)nCOOH (donde X = OH, amina, H y n = 1-4), ácido tartárico al 3%, etilenglicol al 1%, 1, 2, 4-triazol, 1, 2, 3-triazol, tetrazol, agente tensioactivo no iónico, etanol, trifluoroetanol, SiF6, agente tensioactivo de sal orgánica, poli(alcohol vinílico), ácido difenilsulfámico, oxalato de sodio, benzotriazol, lignosulfonato de sodio, glicol, gelatina-carboximetilcelulosa, aminas, sales de metales pesados, sales de Cu y Ta, KCl, CuCl2, SnCl2, propilenglicol, 2-etil-hexilamina, carbonato de cobre, alcoholes de peso molecular bajo, glicoles, fenoles, alcoholes alifáticos, poli(alcoholes vinílicos), agentes tensioactivos aniónicos, agentes tensioactivos catiónicos, agentes tensioactivos basados en fluorocarbonos, agentes tensioactivos no iónicos que tienen las propiedades de adherirse preferentemente a ciertos materiales, modificando con ello la reactividad química allí donde se adhieren, estabilizadores de las soluciones de poli(alcohol vinílico) y especies químicas que inhiben la descomposición espontánea de los agentes oxidantes, agentes humectantes y mezclas de los mismos.

Claims (19)

1. Una solución de grabado para la planarización de una superficie de Cu/Ta/TaN que comprende:
a)
una sustancia reaccionante oxidante seleccionada del grupo constituido por (NH_{4})_{2}S_{2}O_{8}, H_{2}O_{2}, HNO_{3} y mezclas de los mismos; y,
b)
una sustancia correaccionante seleccionada del grupo constituido por H_{3}PO_{4}, H_{2}SO_{4}, HNO_{3}, ácido oxálico, ácido acético, ácidos orgánicos y mezclas de los mismos; y,
c)
otros aditivos seleccionados del grupo constituido por HCl, alcoholes alifáticos, hidroxitolueno butilado, Agidol-2, 2,6-terc-butil-4[(dimetilamino)metil]fenol, 2,6-di-terc-4-N,N-dimetilaminometilfenol, bórax, etilenglicol, ZnSO_{4}, metanol, propanol, poli(oxietileno)lauril-éter, ácido málico, HOOC(CX_{2})_{n}COOH (donde X = OH, amina, H y n = 1-4), ácido tartárico al 3%, etilenglicol al 1%, 1,2,4-triazol, 1,2,3-triazol, tetrazol, agente tensioactivo no iónico, etanol, trifluoroetanol, SiF6, agente tensioactivo de sal orgánica, poli(alcohol vinílico), ácido difenilsulfámico, oxalato de sodio, benzotriazol, lignosulfonato de sodio, glicol, gelatina-carboximetilcelulosa, aminas, sales de metales pesados, sales de Cu y Ta, KCl, CuCl_{2}, SnCl_{2}, propilenglicol, 2-etil-hexilamina, carbonato de cobre, alcoholes de peso molecular bajo, glicoles, fenoles, alcoholes alifáticos, poli(alcoholes vinílicos), agentes tensioactivos aniónicos, agentes tensioactivos catiónicos, agentes tensioactivos basados en fluorocarbonos, agentes tensioactivos no iónicos que tienen las propiedades de adherirse preferentemente a ciertos materiales, modificando con ello la reactividad química allí donde se adhieren, estabilizadores de las soluciones de poli(alcohol vinílico) y especies químicas que inhiben la descomposición espontánea de los agentes oxidantes, agentes humectantes y mezclas de los mismos.
2. Una solución de grabado de acuerdo con la reivindicación 1, que comprende adicionalmente una especie química seleccionada del grupo constituido por CuCl, FeCl, FeCl_{3}, y mezclas de las mismas.
3. Una solución de grabado para planarización de una superficie de Cu/Ta/TaN que comprende especies químicas seleccionadas del grupo constituido por NaClO_{3}, FeNO_{3}, (NH_{4})_{2}S_{2}O_{8}, CuNH_{4}Cl_{3}, Na_{2}S_{2}O_{8}, K_{2}S_{2}O_{5}, NH_{4}F, CuSO_{4}, NH_{4}OH, KOH, H_{2}O_{2}, Cu(NO_{3})_{2}, sal de sodio de EDTA de agente humectante y mezclas de los mismos.
4. Una solución de grabado para la planarización de una superficie de Cu/Ta/TaN que comprende especies químicas seleccionadas del grupo constituido por HF, HNO_{3}, H_{2}O_{2}, H_{2}SO_{4}, ácido láctico y mezclas de los mismos.
5. Una solución de grabado para la planarización de una superficie de Cu/Ta/TaN que comprende especies químicas seleccionadas del grupo constituido por NaOH, KOH, NH_{4}OH, H_{2}O_{2}, y mezclas de los mismos.
6. Una solución de grabado para la planarización de una superficie de Cu/Ta/TaN que comprende: EDTA, NH_{4}OH, H_{2}O_{2}, en solución acuosa.
7. Una solución de grabado para la planarización de una superficie de Cu/Ta/TaN que comprende: ácido cítrico, ácido eritórbico, trietanolamina, en solución acuosa.
8. Una solución de grabado para la planarización de una superficie de Cu/Ta/TaN que comprende: citrato trisódico, trietanolamina, nitrato de sodio, en solución acuosa.
9. Una solución de grabado para la planarización de una superficie de Cu/Ta/TaN que comprende: H_{2}SO_{4}, H_{2}O_{2}, sal de molibdeno, ácido fenolsulfónico, en solución acuosa.
10. Una solución de grabado para la planarización de una superficie de Cu/Ta/TaN que comprende: ácido mineral, sal de molibdeno.
11. Una solución de grabado para la planarización de una superficie de Cu/Ta/TaN de acuerdo con la reivindicación 1 que comprende adicionalmente partículas abrasivas seleccionadas del grupo constituido por SiO_{2}, Al_{2}O_{3}, partículas elementales metálicas y sólidas, partículas de polímero, óxidos, carburos, fluoruros, carbonatos, boruros, nitruros, hidróxidos de Al, Ag, Au, Ca, Ce, Cr, Cu, Fe, Gd, Ge, La, In, Hf, Mn, Mg, Ni, Nd, Pb, Pt, P, Sb, Sc, Sn, Tb, Ti, Ta, Th, Y, W, Zn, Zr, y mezclas de los mismos.
12. Una solución de grabado de acuerdo con la reivindicación 11, en la cual dichas partículas abrasivas están recubiertas.
13. Una solución de grabado de acuerdo con la reivindicación 12, en la cual dicho recubrimiento es una especie químicamente activa.
14. Una solución de grabado de acuerdo con la reivindicación 11, en la cual dicho recubrimiento es CeO_{2}.
15. Una solución de grabado de acuerdo con la reivindicación 11, en la cual dichas partículas se producen por el método de sol.
16. Una solución de grabado de acuerdo con la reivindicación 11, en la cual dichas partículas tienen un intervalo de tamaños de aproximadamente 4 nanómetros a aproximadamente 5 micrómetros.
17. Una solución de grabado de acuerdo con la reivindicación 11, en la cual dichas partículas tienen un tamaño menor que aproximadamente 5 micrómetros.
18. Una solución de grabado para la planarización de una superficie de Cu/Ta/TaN de acuerdo con la reivindicación 1, en la cual dichos reactivos oxidantes incluyen desde aproximadamente 50 partes en volumen a aproximadamente 70 partes en volumen de H_{3}PO_{4} acuoso concentrado, desde aproximadamente 24 partes en volumen a aproximadamente 40 partes en volumen de ácido acético acuoso concentrado y desde aproximadamente 3 partes en volumen a aproximadamente 10 partes en volumen de HNO_{3} acuoso concentrado.
19. Una solución de grabado de acuerdo con la reivindicación 18, que comprende además desde aproximadamente 1 parte en volumen a aproximadamente 15 partes en volumen de HF acuoso concentrado.
ES01998054T 2000-12-20 2001-12-18 Composicion para la planarizacion quimica y mecanica de cobre, tantalo y nitruro de tantalo. Pending ES2209676T1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US745266 2000-12-20
US09/745,266 US6630433B2 (en) 1999-07-19 2000-12-20 Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride

Publications (1)

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ES2209676T1 true ES2209676T1 (es) 2004-07-01

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ES01998054T Pending ES2209676T1 (es) 2000-12-20 2001-12-18 Composicion para la planarizacion quimica y mecanica de cobre, tantalo y nitruro de tantalo.

Country Status (9)

Country Link
US (2) US6630433B2 (es)
EP (1) EP1352109A1 (es)
JP (1) JP2004524440A (es)
KR (1) KR20030061461A (es)
CN (1) CN1738928A (es)
CA (1) CA2431591A1 (es)
DE (1) DE01998054T1 (es)
ES (1) ES2209676T1 (es)
WO (1) WO2002059393A1 (es)

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