DD223018A5 - Verfahren zum herstellen eines halbleiterbauelements - Google Patents
Verfahren zum herstellen eines halbleiterbauelements Download PDFInfo
- Publication number
- DD223018A5 DD223018A5 DD84264524A DD26452484A DD223018A5 DD 223018 A5 DD223018 A5 DD 223018A5 DD 84264524 A DD84264524 A DD 84264524A DD 26452484 A DD26452484 A DD 26452484A DD 223018 A5 DD223018 A5 DD 223018A5
- Authority
- DD
- German Democratic Republic
- Prior art keywords
- substrate
- during
- layer
- region
- doping material
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims description 52
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 238000010276 construction Methods 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 238000005137 deposition process Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 230000000873 masking effect Effects 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 4
- 230000002000 scavenging effect Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000011084 recovery Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 231100000241 scar Toxicity 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 208000032544 Cicatrix Diseases 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000037387 scars Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/082—Ion implantation FETs/COMs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Led Devices (AREA)
- Element Separation (AREA)
- Motor And Converter Starters (AREA)
- Burglar Alarm Systems (AREA)
- Glass Compositions (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BE2/60137A BE897139A (nl) | 1983-06-27 | 1983-06-27 | Proces voor het maken van een halfgeleider-inrichting en inrichting hierdoor verkregen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD223018A5 true DD223018A5 (de) | 1985-05-29 |
Family
ID=3865640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD84264524A DD223018A5 (de) | 1983-06-27 | 1984-06-26 | Verfahren zum herstellen eines halbleiterbauelements |
Country Status (19)
| Country | Link |
|---|---|
| US (1) | US4626293A (pt) |
| EP (1) | EP0133204B1 (pt) |
| JP (1) | JPH0646658B2 (pt) |
| KR (1) | KR850000786A (pt) |
| AT (1) | ATE29625T1 (pt) |
| AU (1) | AU570692B2 (pt) |
| BE (1) | BE897139A (pt) |
| BR (1) | BR8402888A (pt) |
| CA (1) | CA1223975A (pt) |
| DD (1) | DD223018A5 (pt) |
| DE (1) | DE3466132D1 (pt) |
| ES (1) | ES533752A0 (pt) |
| HU (1) | HUT37690A (pt) |
| PH (1) | PH20860A (pt) |
| PT (1) | PT78788B (pt) |
| RO (1) | RO91547B (pt) |
| TR (1) | TR21961A (pt) |
| YU (1) | YU111284A (pt) |
| ZA (1) | ZA844513B (pt) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0256033B1 (en) * | 1986-01-22 | 1993-06-02 | Hughes Aircraft Company | Optical analog data processing systems for handling bipolar and complex data |
| JPH0812918B2 (ja) * | 1986-03-28 | 1996-02-07 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2604777B2 (ja) * | 1988-01-18 | 1997-04-30 | 松下電工株式会社 | 二重拡散型電界効果半導体装置の製法 |
| CH677558A5 (en) * | 1988-11-28 | 1991-05-31 | Asea Brown Boveri | Deep PN junction mfr. for power thyristor - has oxide layer applied to surface of substrate during diffusion process for doping material |
| US5668026A (en) * | 1996-03-06 | 1997-09-16 | Megamos Corporation | DMOS fabrication process implemented with reduced number of masks |
| JP3292038B2 (ja) * | 1996-05-31 | 2002-06-17 | 日産自動車株式会社 | 物入れ |
| JP3111947B2 (ja) | 1997-10-28 | 2000-11-27 | 日本電気株式会社 | 半導体装置、その製造方法 |
| JP3487844B1 (ja) * | 2002-06-14 | 2004-01-19 | 沖電気工業株式会社 | Ｌｄｍｏｓ型半導体装置の製造方法 |
| US8821141B2 (en) | 2011-06-23 | 2014-09-02 | Wright Flow Technologies Limited | Positive displacement rotary pumps with improved cooling |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3919008A (en) * | 1970-12-02 | 1975-11-11 | Hitachi Ltd | Method of manufacturing MOS type semiconductor devices |
| US3895390A (en) * | 1972-11-24 | 1975-07-15 | Signetics Corp | Metal oxide semiconductor structure and method using ion implantation |
| US3996655A (en) * | 1973-12-14 | 1976-12-14 | Texas Instruments Incorporated | Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product |
| US3909320A (en) * | 1973-12-26 | 1975-09-30 | Signetics Corp | Method for forming MOS structure using double diffusion |
| US4038107B1 (en) * | 1975-12-03 | 1995-04-18 | Samsung Semiconductor Tele | Method for making transistor structures |
| JPS52143759A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Impurity diffusion method for semiconductor wafers |
| US4179312A (en) * | 1977-12-08 | 1979-12-18 | International Business Machines Corporation | Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition |
| DE2802838A1 (de) * | 1978-01-23 | 1979-08-16 | Siemens Ag | Mis-feldeffekttransistor mit kurzer kanallaenge |
| JPS5533037A (en) * | 1978-08-28 | 1980-03-08 | Nec Corp | Manufacture of semiconductor device |
| US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
| JPS5556663A (en) * | 1978-10-23 | 1980-04-25 | Nec Corp | Insulating-gate type field-effect transistor |
| DE2947350A1 (de) * | 1979-11-23 | 1981-05-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von mnos-speichertransistoren mit sehr kurzer kanallaenge in silizium-gate-technologie |
| US4344081A (en) * | 1980-04-14 | 1982-08-10 | Supertex, Inc. | Combined DMOS and a vertical bipolar transistor device and fabrication method therefor |
| JPS57170570A (en) * | 1981-04-15 | 1982-10-20 | Toshiba Corp | Field effect transistor |
| GB2100507A (en) * | 1981-06-17 | 1982-12-22 | Philips Electronic Associated | Method of making a vertical igfet |
| JPH0635272B2 (ja) * | 1988-04-04 | 1994-05-11 | 日産車体株式会社 | ステアリング支持装置 |
| GB9120299D0 (en) * | 1991-09-24 | 1991-11-06 | Latchways Ltd | Load attachment system, and parts fittings therefor |
-
1983
- 1983-06-27 BE BE2/60137A patent/BE897139A/nl not_active IP Right Cessation
-
1984
- 1984-06-08 HU HU842231A patent/HUT37690A/hu unknown
- 1984-06-12 EP EP84106690A patent/EP0133204B1/de not_active Expired
- 1984-06-12 DE DE8484106690T patent/DE3466132D1/de not_active Expired
- 1984-06-12 AT AT84106690T patent/ATE29625T1/de not_active IP Right Cessation
- 1984-06-13 BR BR8402888A patent/BR8402888A/pt unknown
- 1984-06-14 ZA ZA844513A patent/ZA844513B/xx unknown
- 1984-06-20 CA CA000456985A patent/CA1223975A/en not_active Expired
- 1984-06-25 AU AU29828/84A patent/AU570692B2/en not_active Ceased
- 1984-06-25 PT PT78788A patent/PT78788B/pt unknown
- 1984-06-26 YU YU01112/84A patent/YU111284A/xx unknown
- 1984-06-26 PH PH30889A patent/PH20860A/en unknown
- 1984-06-26 DD DD84264524A patent/DD223018A5/de unknown
- 1984-06-26 TR TR21961A patent/TR21961A/xx unknown
- 1984-06-26 RO RO115007A patent/RO91547B/ro unknown
- 1984-06-27 KR KR1019840003649A patent/KR850000786A/ko not_active Application Discontinuation
- 1984-06-27 JP JP59131194A patent/JPH0646658B2/ja not_active Expired - Lifetime
- 1984-06-27 ES ES533752A patent/ES533752A0/es active Granted
- 1984-06-27 US US06/625,723 patent/US4626293A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| PH20860A (en) | 1987-05-19 |
| ATE29625T1 (de) | 1987-09-15 |
| US4626293A (en) | 1986-12-02 |
| RO91547A (ro) | 1987-04-30 |
| JPH0646658B2 (ja) | 1994-06-15 |
| DE3466132D1 (en) | 1987-10-15 |
| BE897139A (nl) | 1983-12-27 |
| ES8604369A1 (es) | 1985-12-01 |
| BR8402888A (pt) | 1985-05-21 |
| PT78788A (en) | 1984-07-01 |
| EP0133204B1 (de) | 1987-09-09 |
| ES533752A0 (es) | 1985-12-01 |
| RO91547B (ro) | 1987-05-01 |
| TR21961A (tr) | 1985-12-10 |
| PT78788B (en) | 1986-07-11 |
| YU111284A (en) | 1988-02-29 |
| JPS6042869A (ja) | 1985-03-07 |
| KR850000786A (ko) | 1985-03-09 |
| AU570692B2 (en) | 1988-03-24 |
| ZA844513B (en) | 1985-02-27 |
| EP0133204A1 (de) | 1985-02-20 |
| CA1223975A (en) | 1987-07-07 |
| HUT37690A (en) | 1986-01-23 |
| AU2982884A (en) | 1985-01-03 |
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