CN202259243U - 一种球焊后框架贴膜封装件 - Google Patents

一种球焊后框架贴膜封装件 Download PDF

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CN202259243U
CN202259243U CN201120197485XU CN201120197485U CN202259243U CN 202259243 U CN202259243 U CN 202259243U CN 201120197485X U CN201120197485X U CN 201120197485XU CN 201120197485 U CN201120197485 U CN 201120197485U CN 202259243 U CN202259243 U CN 202259243U
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chip
bonding
frame
daf
lead frame
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郭小伟
刘建军
陈欣
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Huatian Technology Xian Co Ltd
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XI'AN TIANSHENG ELECTRONICS CO Ltd
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    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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Abstract

一种球焊后框架贴膜封装件，包括第一IC芯片，第一IC芯片与引线框架通过粘片胶或胶膜片(DAF)相连，第一IC芯片上的焊点通过第一键合线与引线框架的内引脚连接，本实用新型能够将引线框架很好的固定，球焊时所用引线框架背面不用贴胶膜，这样框架与压焊夹具的结合更紧密，可将引线框架很好的固定，从而避免了因框架背面胶膜回弹而引起的打线速度慢、质量差的问题；球焊后再进行框架贴膜，可避免球焊时因焊接温度过高引起的管脚背面胶膜残留，以及高温导致胶膜变形、产生气泡而引起的塑封溢料等缺陷；这种新型生产方法非常适合小载体打线；适用于所有QFN/DFN引线框架。

Description

一种球焊后框架贴膜封装件
技术领域
本实用新型涉及集成电路封装制造领域，具体涉及一种球焊后框架贴膜封装件。
背景技术
QFN(四面扁平无引脚封装)及DFN(双扁平无引脚封装)封装是在近几年随着通讯及便携式小型数码电子产品的产生(数码相机、手机、PC、MP3)而发展起来的、适用于高频、宽带、低噪声、高导热、小体积，高速度等电性要求的中小规模集成电路的封装。我们知道QFN/DFN封装有效地利用了引线脚的封装空间，从而大幅度地提高了封装效率。但目前大部分半导体封装厂商QFN/DFN的制造过程中都面临一些工艺困惑，原因是现有QFN/DFN工艺为防止塑封前的工序刮伤引脚和避免塑封时塑封树脂溢到引线脚，一般采用在引线框(L/F)背面加贴耐高温膜的方法来阻断塑封时树脂的随意流动，而这一方法在解决上述问题的同时却导致了另外一系列的工艺问题：
①目前塑胶耐高温膜的耐温不能超过270℃，考虑到膜上粘片胶残留的问题，实际工艺允许温度会更低，一般不超过220℃，因此使QFN只能适应于导电胶装片工艺，而半导体封装的共晶及软焊料工艺都不能是使用该工艺，从而使封装的导电及导热性能均受到了限制；
②QFN/DFN框架多为半蚀刻框架，框架背面贴有胶膜时，框架部分区域不能100％与胶膜结合，因此打线时会因胶膜弹性很容易影响到第二焊点的质量及打线速度；
③压焊高温易使框架背面的胶膜变形、出现气泡等，导致塑封时溢料的产生；
④打线时焊接的功率会被耐高温膜吸收，从而造成焊接牢度下降(金线测克拉力下降)，金线会在塑封时被塑封胶冲断，而更为严重的是产品通过了各项检测但可靠性存在隐患；
⑤塑封时注射压力不能按半导体工艺进行控制，否则会产生塑封树脂高出金属引线脚甚至于溢到引线脚表面的现象即溢胶问题，如工艺中耐高温膜与引线框稍有贴合不紧，则此现象更加明显；
⑥溢胶如处理不彻底还会造成最终产品在表面贴装工艺(SMT)过程中的易焊性不良；
实用新型内容
为了克服上述现有技术的缺点，本实用新型的目的在于提供一种球焊后框架贴膜封装件，能够将引线框架很好的固定，没有塑封溢料的缺点。
为了达到上述目的，本实用新型采取的技术方案为：
一种球焊后框架贴膜封装件，包括第一IC芯片3，第一IC芯片3与引线框架1通过粘片胶或胶膜片(DAF)2相连，第一IC芯片3上的焊点通过第一键合线4与引线框架1的内引脚连接。
所述的第一IC芯片3与第二IC芯片6通过第二键合线7连接，第二IC芯片6与引线框架1通过第三键合线8连接，第一IC芯片3与第二IC芯片6通过第二粘片胶或胶膜片(DAF)5连接。
由于本实用新型为球焊后框架贴膜封装件，能够将引线框架很好的固定，具有以下优点：
①球焊时所用引线框架背面不用贴胶膜，这样框架与压焊夹具的结合更紧密，可将引线框架很好的固定，从而避免了因框架背面胶膜回弹而引起的打线速度慢、质量差的问题；
②球焊后再进行框架贴膜，可避免球焊时因焊接温度过高引起的管脚背面胶膜残留，以及高温导致胶膜变形、产生气泡而引起的塑封溢料等缺陷；
③这种新型生产方法非常适合小载体打线；
④适用于所有QFN/DFN引线框架。
本封装件结构包括引线框架载体、粘接材料、IC芯片、键合线、内引线脚、塑封体、外引线脚。本封装件载体上是粘接材料，粘接材料上是IC芯片，IC芯片上的焊盘通过键合线与载体或内引脚相连构成了电源和信号通道，塑封体包围了引线框架载体、粘接材料、IC芯片、键合线、引脚表面和侧面构成了电路整体，并且对IC芯片和键合线起到了支撑和保护作用。
附图说明
图1为本实用新型单芯片封装剖面图。
图2为本实用新型多芯片堆叠式封装剖面图。
图3为本实用新型上芯后的剖面图。
图4为本实用新型压焊后的剖面图。
图5为本实用新型贴膜后的剖面图。
图6为本实用新型塑封后的剖面图。
具体实施方式
下面结合附图对本实用新型做详细描述。
本实用新型可用于单芯片封装也可用于多芯片堆叠式封装。
参照图1，用于单芯片封装时，一种球焊后框架贴膜封装件，包括第一IC芯片3，第一IC芯片3与引线框架1通过粘片胶或胶膜片(DAF)2相连，第一键合线4直接从第一IC芯片3打到引线框架1的内引脚上，引线框架1的上面依次为粘片胶或胶膜片(DAF)2和IC芯片3，第一IC芯片3上的焊点通过第一键合线4与引线框架1的内引脚连接，塑封体9包围了引线框架1、第一粘片胶或胶膜片(DAF)2、第一IC芯片3、第一键合线4构成了电路的整体，塑封体9对第一IC芯片3和第一键合线4起到了支撑和保护作用，第一IC芯片3、第一键合线4、引线框架内引脚1构成了电路的电源和信号通道。
参照图2，用于多芯片堆叠式封装时，一种球焊后框架贴膜封装件，包括第一IC芯片3，第一IC芯片3与引线框架1通过粘片胶或胶膜片(DAF)2相连，第一键合线4直接从第一IC芯片3打到引线框架1的内引脚上，引线框架1的上面依次为第一粘片胶或胶膜片(DAF)2和第一IC芯片3，第一IC芯片3上的焊点通过第一键合线4与引线框架1的内引脚连接，塑封体9包围了引线框架1、第一粘片胶或胶膜片(DAF)2、第一IC芯片3、第一键合线4构成了电路的整体，塑封体9对第一IC芯片3和第一键合线4起到了支撑和保护作用，第一IC芯片3、第一键合线4、引线框架内引脚1构成了电路的电源和信号通道；
第一IC芯片3与第二IC芯片6通过第二键合线7连接，第一IC芯片3与引线框架1间的第一键合线4、第二IC芯片6与引线框架1通过第三键合线8连接，第一IC芯片3与第二IC芯片6通过第二粘片胶或胶膜片(DAF)5连接，塑封体9包围了框架内引脚1、第一IC芯片3、第二IC芯片6、第一粘片胶或胶膜片(DAF)2、第二粘片胶或胶膜片(DAF)5、第一键合线4、第二键合线7、第三键合线8构成了电路整体，并且塑封体9对第一IC芯片3、第二IC芯片6、第一键合线4、第二键合线7、第三键合线8起到了支撑和保护作用，第一IC芯片3、第二IC芯片6、第一键合线4、第二键合线7、第三键合线8和引线框架1构成了电路的电源和信号通道。
所述的第一键合线4、第二键合线7和第三键合线8采用金线或铜线。
如图3～6所示，一种球焊后框架贴膜封装件的生产工艺流程如下：
晶圆减薄→划片→上芯(粘片)→压焊→框架背面贴膜→塑封→后固化→框架背面贴膜→磨胶→锡化→打印→产品分离→检验→包装→入库。
1、减薄
减薄厚度50μm～200μm，粗糙度Ra 0.10mm～0.05mm；
2、划片
150μm以上晶圆同普通QFN划片工艺，但厚度在150μm以下晶圆，使用双刀划片机及其工艺；
3、上芯(粘片)
既可采用粘片胶又可采用胶膜片(DAF)上芯；
4、压焊
由于框架背面无胶膜，因此采用与以往不同的新型压焊夹具，它与框架的结合度更好，避免了因框架半蚀刻特性而造成的结合不紧密缺陷；同时夹具产生的吸力可直接作用于框架上，对其吸力较框架背面有膜的情况下增大，固能很好的将框架固定。从而为压焊提供了一个很好的前提条件，大大减小QFN/DFN在压焊时受振动影响而导致在球颈和鱼尾处断裂的产生几率。
5、框架背面贴膜
采用新型生产方法及新设备，在压焊结束后再进行框架背面贴膜10，UPH值≥300strip/hour，频率：50Hz/60Hz；能保证压焊打完线的产品贴完膜后不会有线弧变形、断线等不良现象；且贴膜10后的产品不能有气泡、Warpage＜2mil、框架不能有弯曲和凹痕而且不能有沾污、贴膜后产品在塑封包封后不能出现溢料等不良现象。由于压焊结束后才进行贴膜，因此避免了压焊站高温造成的框架背面胶膜残留。
6、塑封、后固化
塑封、后固化同常规QFN/DFN工艺相同。
7、磨胶
由于胶膜未经过压焊站高温，固揭膜10后框架背面残留物较从前大大减少，因此磨胶时其药水浓度及打磨参数均进行了相应调整，防止磨胶过度导致框架受损。
8、锡化、打印、产品分离、检验、包装等均与常规QFN/DFN工艺相同。

Claims (2)

1.一种球焊后框架贴膜封装件，包括第一IC芯片(3)，其特征在于：第一IC芯片(3)与引线框架(1)通过粘片胶或胶膜片DAF(2)相连，第一IC芯片(3)上的焊点通过第一键合线(4)与引线框架(1)的内引脚连接。
2.根据权利要求1所述的一种球焊后框架贴膜封装件，其特征在于：所述的第一IC芯片(3)与第二IC芯片(6)通过第二键合线(7)连接，第二IC芯片(6)与引线框架(1)通过第三键合线(8)连接，第一IC芯片(3)与第二IC芯片(6)通过第二粘片胶或胶膜片DAF(5)连接。 
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CN103065977A (zh) * 2012-12-18 2013-04-24 华天科技（西安）有限公司 一种基于框架可实现smt的扁平封装件制作工艺
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