CN1973374A - 具有多个半导体层的半导体器件 - Google Patents

具有多个半导体层的半导体器件 Download PDF

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Publication number
CN1973374A
CN1973374A CNA2005800188113A CN200580018811A CN1973374A CN 1973374 A CN1973374 A CN 1973374A CN A2005800188113 A CNA2005800188113 A CN A2005800188113A CN 200580018811 A CN200580018811 A CN 200580018811A CN 1973374 A CN1973374 A CN 1973374A
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CN
China
Prior art keywords
semiconductor layer
transistor
semiconductor
layer
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800188113A
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English (en)
Chinese (zh)
Inventor
苏莱施·温卡特森
马克·C.·福伊希
迈克尔·A.·门迪奇诺
马瑞斯·K.·奥罗斯基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1973374A publication Critical patent/CN1973374A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNA2005800188113A 2004-06-10 2005-05-11 具有多个半导体层的半导体器件 Pending CN1973374A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/865,351 US20050275018A1 (en) 2004-06-10 2004-06-10 Semiconductor device with multiple semiconductor layers
US10/865,351 2004-06-10

Publications (1)

Publication Number Publication Date
CN1973374A true CN1973374A (zh) 2007-05-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800188113A Pending CN1973374A (zh) 2004-06-10 2005-05-11 具有多个半导体层的半导体器件

Country Status (6)

Country Link
US (2) US20050275018A1 (enExample)
JP (1) JP2008503104A (enExample)
KR (1) KR20070024581A (enExample)
CN (1) CN1973374A (enExample)
TW (1) TW200620662A (enExample)
WO (1) WO2006001915A2 (enExample)

Cited By (3)

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CN100456451C (zh) * 2005-04-08 2009-01-28 国际商业机器公司 三维混合取向技术的结构和方法
CN104966716A (zh) * 2015-07-07 2015-10-07 西安电子科技大学 异沟道cmos集成器件及其制备方法
CN105206584A (zh) * 2015-08-28 2015-12-30 西安电子科技大学 异质沟道槽型栅cmos集成器件及其制备方法

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JP2006165335A (ja) * 2004-12-08 2006-06-22 Toshiba Corp 半導体装置
US7271043B2 (en) * 2005-01-18 2007-09-18 International Business Machines Corporation Method for manufacturing strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels
CN101346820B (zh) * 2005-12-22 2010-11-03 国立大学法人东北大学 半导体器件
JP5145691B2 (ja) * 2006-02-23 2013-02-20 セイコーエプソン株式会社 半導体装置
US7573104B2 (en) 2006-03-06 2009-08-11 International Business Machines Corporation CMOS device on hybrid orientation substrate comprising equal mobility for perpendicular devices of each type
US7456055B2 (en) 2006-03-15 2008-11-25 Freescale Semiconductor, Inc. Process for forming an electronic device including semiconductor fins
US7419866B2 (en) * 2006-03-15 2008-09-02 Freescale Semiconductor, Inc. Process of forming an electronic device including a semiconductor island over an insulating layer
US7402477B2 (en) * 2006-03-30 2008-07-22 Freescale Semiconductor, Inc. Method of making a multiple crystal orientation semiconductor device
US7582516B2 (en) 2006-06-06 2009-09-01 International Business Machines Corporation CMOS devices with hybrid channel orientations, and methods for fabricating the same using faceted epitaxy
US7803670B2 (en) * 2006-07-20 2010-09-28 Freescale Semiconductor, Inc. Twisted dual-substrate orientation (DSO) substrates
JP4534164B2 (ja) * 2006-07-25 2010-09-01 エルピーダメモリ株式会社 半導体装置の製造方法
US7863653B2 (en) * 2006-11-20 2011-01-04 International Business Machines Corporation Method of enhancing hole mobility
FR2915318B1 (fr) * 2007-04-20 2009-07-17 St Microelectronics Crolles 2 Procede de realisation d'un circuit electronique integre a deux portions de couches actives ayant des orientations cristallines differentes
KR101461206B1 (ko) 2007-05-17 2014-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제조방법
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
JP5394043B2 (ja) * 2007-11-19 2014-01-22 株式会社半導体エネルギー研究所 半導体基板及びそれを用いた半導体装置、並びにそれらの作製方法
US8211786B2 (en) 2008-02-28 2012-07-03 International Business Machines Corporation CMOS structure including non-planar hybrid orientation substrate with planar gate electrodes and method for fabrication
US8581342B2 (en) * 2008-06-20 2013-11-12 Infineon Technologies Austria Ag Semiconductor device with field electrode and method
US8120110B2 (en) * 2008-08-08 2012-02-21 International Business Machines Corporation Semiconductor structure including a high performance FET and a high voltage FET on a SOI substrate
US20100176482A1 (en) 2009-01-12 2010-07-15 International Business Machine Corporation Low cost fabrication of double box back gate silicon-on-insulator wafers with subsequent self aligned shallow trench isolation
US7767546B1 (en) 2009-01-12 2010-08-03 International Business Machines Corporation Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layer
US8093084B2 (en) 2009-04-30 2012-01-10 Freescale Semiconductor, Inc. Semiconductor device with photonics
US8587063B2 (en) 2009-11-06 2013-11-19 International Business Machines Corporation Hybrid double box back gate silicon-on-insulator wafers with enhanced mobility channels
WO2011102205A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8912055B2 (en) * 2011-05-03 2014-12-16 Imec Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby
JP2013016789A (ja) * 2011-06-10 2013-01-24 Sumitomo Chemical Co Ltd 半導体デバイス、半導体基板、半導体基板の製造方法および半導体デバイスの製造方法
TWI550828B (zh) * 2011-06-10 2016-09-21 住友化學股份有限公司 半導體裝置、半導體基板、半導體基板之製造方法及半導體裝置之製造方法
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
US9978650B2 (en) 2013-03-13 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor channel
US12237443B2 (en) * 2022-02-15 2025-02-25 X-Celeprint Limited Printed components in device pockets

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JPH04372166A (ja) * 1991-06-21 1992-12-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH09246507A (ja) * 1996-03-05 1997-09-19 Citizen Watch Co Ltd 半導体装置およびその製造方法
US5847419A (en) * 1996-09-17 1998-12-08 Kabushiki Kaisha Toshiba Si-SiGe semiconductor device and method of fabricating the same
JP2000243854A (ja) * 1999-02-22 2000-09-08 Toshiba Corp 半導体装置及びその製造方法
US6339232B1 (en) * 1999-09-20 2002-01-15 Kabushika Kaisha Toshiba Semiconductor device
US6583440B2 (en) * 2000-11-30 2003-06-24 Seiko Epson Corporation Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
US6498057B1 (en) * 2002-03-07 2002-12-24 International Business Machines Corporation Method for implementing SOI transistor source connections using buried dual rail distribution
JP4030383B2 (ja) * 2002-08-26 2008-01-09 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6845034B2 (en) * 2003-03-11 2005-01-18 Micron Technology, Inc. Electronic systems, constructions for detecting properties of objects, and assemblies for identifying persons
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US7034362B2 (en) * 2003-10-17 2006-04-25 International Business Machines Corporation Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures
US7303949B2 (en) * 2003-10-20 2007-12-04 International Business Machines Corporation High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture
US6995456B2 (en) * 2004-03-12 2006-02-07 International Business Machines Corporation High-performance CMOS SOI devices on hybrid crystal-oriented substrates
US6998684B2 (en) * 2004-03-31 2006-02-14 International Business Machines Corporation High mobility plane CMOS SOI

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100456451C (zh) * 2005-04-08 2009-01-28 国际商业机器公司 三维混合取向技术的结构和方法
CN104966716A (zh) * 2015-07-07 2015-10-07 西安电子科技大学 异沟道cmos集成器件及其制备方法
CN104966716B (zh) * 2015-07-07 2018-01-02 西安电子科技大学 异沟道cmos集成器件及其制备方法
CN105206584A (zh) * 2015-08-28 2015-12-30 西安电子科技大学 异质沟道槽型栅cmos集成器件及其制备方法
CN105206584B (zh) * 2015-08-28 2018-09-14 西安电子科技大学 异质沟道槽型栅cmos集成器件及其制备方法

Also Published As

Publication number Publication date
JP2008503104A (ja) 2008-01-31
WO2006001915A2 (en) 2006-01-05
US20050275018A1 (en) 2005-12-15
KR20070024581A (ko) 2007-03-02
WO2006001915A3 (en) 2006-04-06
TW200620662A (en) 2006-06-16
US20060194384A1 (en) 2006-08-31

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Open date: 20070530