TW200620662A - Semiconductor device with multiple semiconductor layers - Google Patents
Semiconductor device with multiple semiconductor layersInfo
- Publication number
- TW200620662A TW200620662A TW094118826A TW94118826A TW200620662A TW 200620662 A TW200620662 A TW 200620662A TW 094118826 A TW094118826 A TW 094118826A TW 94118826 A TW94118826 A TW 94118826A TW 200620662 A TW200620662 A TW 200620662A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- orientation
- channel transistors
- crystal plane
- strain
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 239000013078 crystal Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/865,351 US20050275018A1 (en) | 2004-06-10 | 2004-06-10 | Semiconductor device with multiple semiconductor layers |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200620662A true TW200620662A (en) | 2006-06-16 |
Family
ID=35459625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094118826A TW200620662A (en) | 2004-06-10 | 2005-06-07 | Semiconductor device with multiple semiconductor layers |
Country Status (6)
Country | Link |
---|---|
US (2) | US20050275018A1 (zh) |
JP (1) | JP2008503104A (zh) |
KR (1) | KR20070024581A (zh) |
CN (1) | CN1973374A (zh) |
TW (1) | TW200620662A (zh) |
WO (1) | WO2006001915A2 (zh) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006165335A (ja) * | 2004-12-08 | 2006-06-22 | Toshiba Corp | 半導体装置 |
US7271043B2 (en) * | 2005-01-18 | 2007-09-18 | International Business Machines Corporation | Method for manufacturing strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels |
US7288821B2 (en) * | 2005-04-08 | 2007-10-30 | International Business Machines Corporation | Structure and method of three dimensional hybrid orientation technology |
US7863713B2 (en) * | 2005-12-22 | 2011-01-04 | Tohoku University | Semiconductor device |
JP5145691B2 (ja) * | 2006-02-23 | 2013-02-20 | セイコーエプソン株式会社 | 半導体装置 |
US7573104B2 (en) * | 2006-03-06 | 2009-08-11 | International Business Machines Corporation | CMOS device on hybrid orientation substrate comprising equal mobility for perpendicular devices of each type |
US7456055B2 (en) | 2006-03-15 | 2008-11-25 | Freescale Semiconductor, Inc. | Process for forming an electronic device including semiconductor fins |
US7419866B2 (en) * | 2006-03-15 | 2008-09-02 | Freescale Semiconductor, Inc. | Process of forming an electronic device including a semiconductor island over an insulating layer |
US7402477B2 (en) * | 2006-03-30 | 2008-07-22 | Freescale Semiconductor, Inc. | Method of making a multiple crystal orientation semiconductor device |
US7582516B2 (en) | 2006-06-06 | 2009-09-01 | International Business Machines Corporation | CMOS devices with hybrid channel orientations, and methods for fabricating the same using faceted epitaxy |
US7803670B2 (en) * | 2006-07-20 | 2010-09-28 | Freescale Semiconductor, Inc. | Twisted dual-substrate orientation (DSO) substrates |
JP4534164B2 (ja) * | 2006-07-25 | 2010-09-01 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
US7863653B2 (en) * | 2006-11-20 | 2011-01-04 | International Business Machines Corporation | Method of enhancing hole mobility |
FR2915318B1 (fr) * | 2007-04-20 | 2009-07-17 | St Microelectronics Crolles 2 | Procede de realisation d'un circuit electronique integre a deux portions de couches actives ayant des orientations cristallines differentes |
KR101461206B1 (ko) | 2007-05-17 | 2014-11-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그의 제조방법 |
US8354674B2 (en) | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
JP5394043B2 (ja) * | 2007-11-19 | 2014-01-22 | 株式会社半導体エネルギー研究所 | 半導体基板及びそれを用いた半導体装置、並びにそれらの作製方法 |
US8211786B2 (en) * | 2008-02-28 | 2012-07-03 | International Business Machines Corporation | CMOS structure including non-planar hybrid orientation substrate with planar gate electrodes and method for fabrication |
US8581342B2 (en) * | 2008-06-20 | 2013-11-12 | Infineon Technologies Austria Ag | Semiconductor device with field electrode and method |
US8120110B2 (en) * | 2008-08-08 | 2012-02-21 | International Business Machines Corporation | Semiconductor structure including a high performance FET and a high voltage FET on a SOI substrate |
US20100176482A1 (en) | 2009-01-12 | 2010-07-15 | International Business Machine Corporation | Low cost fabrication of double box back gate silicon-on-insulator wafers with subsequent self aligned shallow trench isolation |
US7767546B1 (en) | 2009-01-12 | 2010-08-03 | International Business Machines Corporation | Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layer |
US8093084B2 (en) | 2009-04-30 | 2012-01-10 | Freescale Semiconductor, Inc. | Semiconductor device with photonics |
US8587063B2 (en) | 2009-11-06 | 2013-11-19 | International Business Machines Corporation | Hybrid double box back gate silicon-on-insulator wafers with enhanced mobility channels |
CN102763214B (zh) * | 2010-02-19 | 2015-02-18 | 株式会社半导体能源研究所 | 半导体器件 |
US8912055B2 (en) * | 2011-05-03 | 2014-12-16 | Imec | Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby |
CN103563068B (zh) * | 2011-06-10 | 2016-03-23 | 住友化学株式会社 | 半导体器件、半导体基板、半导体基板的制造方法及半导体器件的制造方法 |
TWI550828B (zh) * | 2011-06-10 | 2016-09-21 | 住友化學股份有限公司 | 半導體裝置、半導體基板、半導體基板之製造方法及半導體裝置之製造方法 |
US10002968B2 (en) | 2011-12-14 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
US9978650B2 (en) | 2013-03-13 | 2018-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor channel |
CN104966716B (zh) * | 2015-07-07 | 2018-01-02 | 西安电子科技大学 | 异沟道cmos集成器件及其制备方法 |
CN105206584B (zh) * | 2015-08-28 | 2018-09-14 | 西安电子科技大学 | 异质沟道槽型栅cmos集成器件及其制备方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03285351A (ja) * | 1990-04-02 | 1991-12-16 | Oki Electric Ind Co Ltd | Cmis型半導体装置およびその製造方法 |
JPH04372166A (ja) * | 1991-06-21 | 1992-12-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH09246507A (ja) * | 1996-03-05 | 1997-09-19 | Citizen Watch Co Ltd | 半導体装置およびその製造方法 |
US5847419A (en) * | 1996-09-17 | 1998-12-08 | Kabushiki Kaisha Toshiba | Si-SiGe semiconductor device and method of fabricating the same |
JP2000243854A (ja) * | 1999-02-22 | 2000-09-08 | Toshiba Corp | 半導体装置及びその製造方法 |
US6339232B1 (en) * | 1999-09-20 | 2002-01-15 | Kabushika Kaisha Toshiba | Semiconductor device |
US6583440B2 (en) * | 2000-11-30 | 2003-06-24 | Seiko Epson Corporation | Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus |
US6498057B1 (en) * | 2002-03-07 | 2002-12-24 | International Business Machines Corporation | Method for implementing SOI transistor source connections using buried dual rail distribution |
JP4030383B2 (ja) * | 2002-08-26 | 2008-01-09 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
US6845034B2 (en) * | 2003-03-11 | 2005-01-18 | Micron Technology, Inc. | Electronic systems, constructions for detecting properties of objects, and assemblies for identifying persons |
US7132338B2 (en) * | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
US7034362B2 (en) * | 2003-10-17 | 2006-04-25 | International Business Machines Corporation | Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures |
US7303949B2 (en) * | 2003-10-20 | 2007-12-04 | International Business Machines Corporation | High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture |
US6995456B2 (en) * | 2004-03-12 | 2006-02-07 | International Business Machines Corporation | High-performance CMOS SOI devices on hybrid crystal-oriented substrates |
US6998684B2 (en) * | 2004-03-31 | 2006-02-14 | International Business Machines Corporation | High mobility plane CMOS SOI |
-
2004
- 2004-06-10 US US10/865,351 patent/US20050275018A1/en not_active Abandoned
-
2005
- 2005-05-11 CN CNA2005800188113A patent/CN1973374A/zh active Pending
- 2005-05-11 KR KR1020067025968A patent/KR20070024581A/ko not_active Application Discontinuation
- 2005-05-11 JP JP2007527290A patent/JP2008503104A/ja active Pending
- 2005-05-11 WO PCT/US2005/016253 patent/WO2006001915A2/en active Application Filing
- 2005-06-07 TW TW094118826A patent/TW200620662A/zh unknown
-
2006
- 2006-05-09 US US11/382,432 patent/US20060194384A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2006001915A2 (en) | 2006-01-05 |
JP2008503104A (ja) | 2008-01-31 |
CN1973374A (zh) | 2007-05-30 |
KR20070024581A (ko) | 2007-03-02 |
US20050275018A1 (en) | 2005-12-15 |
US20060194384A1 (en) | 2006-08-31 |
WO2006001915A3 (en) | 2006-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200620662A (en) | Semiconductor device with multiple semiconductor layers | |
TW200631175A (en) | Semiconductor device | |
TW200605322A (en) | Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility | |
TW200625450A (en) | Substrate having silicon germanium material and stressed silicon nitride layer | |
GB2444198A (en) | Technique for forming recessed strained drain/source in NMOS and PMOS transistors | |
EP1777737A4 (en) | HIGH ELECTRON MOBILITY TRANSISTOR, FIELD EFFECT TRANSISTOR, EPITAXIAL SUBSTRATE, METHOD OF MAKING THE EPITAXIAL SUBSTRATE, AND METHOD FOR PRODUCING A GROUP III NITRIDE TRANSISTOR | |
TW200629477A (en) | Single metal gate CMOS device | |
WO2005101515A3 (en) | Process to improve transistor drive current through the use of strain | |
TW200501409A (en) | Dual strain-state SiGe layer for microelectronics | |
TW200731549A (en) | Vertical GaN semiconductor device and epitaxial substrate | |
TW200731467A (en) | SOI active layer with different surface orientation | |
TW200625642A (en) | Semiconductor integrated circuit device and fabrication porcess thereof | |
TW200501412A (en) | PMOS transistor strain optimization with raised junction regions | |
EP1455393A4 (en) | DEVICE SUPPLEMENTED | |
TW200739819A (en) | Semiconductor device, and method for manufacturing the same | |
TW200620654A (en) | Complementary metal-oxide-semiconductor field effect transistor structure | |
DE602006006088D1 (de) | Brid-kristallorientierung | |
TW200746412A (en) | Virtual body-contacted trigate | |
SG139657A1 (en) | Structure and method to implement dual stressor layers with improved silicide control | |
TW200625465A (en) | High mobility tri-gate devices and methods of fabrication | |
TW200627582A (en) | Transistor structure with dual trench for optimized stress effect and method thereof | |
TW200703570A (en) | Semionductor device having cell transistor with recess channel structure and method of manufacturing the same | |
GB2474170A (en) | Transistor with embedded si/ge material having enhanced boron confinement | |
GB2450838A (en) | A transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility | |
TW200620481A (en) | Method for making a semiconductor structure using silicon germanium |