CN1941329A - 用于cmos技术的应变感应迁移率增强纳米器件及工艺 - Google Patents
用于cmos技术的应变感应迁移率增强纳米器件及工艺 Download PDFInfo
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- CN1941329A CN1941329A CN200510030311.3A CN200510030311A CN1941329A CN 1941329 A CN1941329 A CN 1941329A CN 200510030311 A CN200510030311 A CN 200510030311A CN 1941329 A CN1941329 A CN 1941329A
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- drain region
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- pmos
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- silicon germanium
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- 238000000034 method Methods 0.000 title claims description 105
- 238000005516 engineering process Methods 0.000 title claims description 26
- 230000008569 process Effects 0.000 title description 8
- 230000001939 inductive effect Effects 0.000 title description 2
- 239000000463 material Substances 0.000 claims abstract description 81
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 53
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000010410 layer Substances 0.000 claims description 88
- 239000004065 semiconductor Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 25
- 125000006850 spacer group Chemical group 0.000 claims description 18
- 230000006835 compression Effects 0.000 claims description 11
- 238000007906 compression Methods 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 238000011065 in-situ storage Methods 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims 2
- 238000005192 partition Methods 0.000 claims 2
- 238000000465 moulding Methods 0.000 claims 1
- 239000003870 refractory metal Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 3
- 230000004048 modification Effects 0.000 description 18
- 238000012986 modification Methods 0.000 description 18
- 239000012535 impurity Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910021332 silicide Inorganic materials 0.000 description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 238000006467 substitution reaction Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- PICXIOQBANWBIZ-UHFFFAOYSA-N zinc;1-oxidopyridine-2-thione Chemical class [Zn+2].[O-]N1C=CC=CC1=S.[O-]N1C=CC=CC1=S PICXIOQBANWBIZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
参数 | HT SiN | HC SiN |
最大时间/s | 100 | 67 |
Servo/Torr | 6 | 6 |
HF RF Pwr/W | 40 | 450 |
SiH4-Lo/sccm | 30 | 30 |
NH3/sccm | 80 | 80 |
N2/sccm | 9000 | 9000 |
Htr 1/2(晶圆)/T | 400 | 400 |
Lift Pos/mils | 480 | 480 |
应力/THK=2K | 948 | -1483 |
Claims (36)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100303113A CN100442476C (zh) | 2005-09-29 | 2005-09-29 | 用于cmos技术的应变感应迁移率增强纳米器件及工艺 |
US11/244,955 US20070072376A1 (en) | 2005-09-29 | 2005-10-05 | Strained-induced mobility enhancement nano-device structure and integrated process architecture for CMOS technologies |
US13/413,122 US20120164803A1 (en) | 2005-09-29 | 2012-03-06 | Strained-induced mobility enhancement nano-device structure and integrated process architecture for cmos technologies |
US13/716,533 US9048300B2 (en) | 2005-09-29 | 2012-12-17 | Strained-induced mobility enhancement nano-device structure and integrated process architecture for CMOS technologies |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100303113A CN100442476C (zh) | 2005-09-29 | 2005-09-29 | 用于cmos技术的应变感应迁移率增强纳米器件及工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1941329A true CN1941329A (zh) | 2007-04-04 |
CN100442476C CN100442476C (zh) | 2008-12-10 |
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CNB2005100303113A Active CN100442476C (zh) | 2005-09-29 | 2005-09-29 | 用于cmos技术的应变感应迁移率增强纳米器件及工艺 |
Country Status (2)
Country | Link |
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US (3) | US20070072376A1 (zh) |
CN (1) | CN100442476C (zh) |
Cited By (10)
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CN101593701B (zh) * | 2008-05-30 | 2011-05-04 | 中芯国际集成电路制造(北京)有限公司 | 应变nmos器件以及应变cmos器件的制造方法 |
CN103377941A (zh) * | 2012-04-28 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Pmos晶体管及形成方法 |
CN103730417A (zh) * | 2012-10-10 | 2014-04-16 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法 |
CN103730421A (zh) * | 2012-10-16 | 2014-04-16 | 中芯国际集成电路制造(上海)有限公司 | Cmos的形成方法 |
CN104183491A (zh) * | 2013-05-21 | 2014-12-03 | 中芯国际集成电路制造(上海)有限公司 | 晶体管的形成方法 |
CN104392929A (zh) * | 2014-11-26 | 2015-03-04 | 上海华力微电子有限公司 | 嵌入式碳化硅的制备方法 |
CN104409354A (zh) * | 2014-11-26 | 2015-03-11 | 上海华力微电子有限公司 | 嵌入式碳化硅的制备方法 |
US9349655B2 (en) | 2008-08-29 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for mechanical stress enhancement in semiconductor devices |
US9502530B2 (en) | 2013-03-13 | 2016-11-22 | United Microelectronics Corp. | Method of manufacturing semiconductor devices |
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CN1808268B (zh) * | 2005-01-18 | 2010-10-06 | 中芯国际集成电路制造(上海)有限公司 | 用于应变硅mos晶体管的金属硬掩模方法和结构 |
CN100442476C (zh) | 2005-09-29 | 2008-12-10 | 中芯国际集成电路制造(上海)有限公司 | 用于cmos技术的应变感应迁移率增强纳米器件及工艺 |
CN101226899A (zh) * | 2007-01-19 | 2008-07-23 | 中芯国际集成电路制造(上海)有限公司 | 在硅凹陷中后续外延生长应变硅mos晶片管的方法和结构 |
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DE102008035816B4 (de) * | 2008-07-31 | 2011-08-25 | GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG, 01109 | Leistungssteigerung in PMOS- und NMOS-Transistoren durch Verwendung eines eingebetteten verformten Halbleitermaterials |
DE102009035409B4 (de) * | 2009-07-31 | 2013-06-06 | Globalfoundries Dresden Module One Llc & Co. Kg | Leckstromsteuerung in Feldeffekttransistoren auf der Grundlage einer Implantationssorte, die lokal an der STI-Kante eingeführt wird |
CN102024761A (zh) * | 2009-09-18 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | 用于形成半导体集成电路器件的方法 |
JP5012886B2 (ja) * | 2009-12-25 | 2012-08-29 | 株式会社デンソー | 半導体装置およびその製造方法 |
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CN103730421A (zh) * | 2012-10-16 | 2014-04-16 | 中芯国际集成电路制造(上海)有限公司 | Cmos的形成方法 |
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CN104183491A (zh) * | 2013-05-21 | 2014-12-03 | 中芯国际集成电路制造(上海)有限公司 | 晶体管的形成方法 |
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US9048300B2 (en) | 2015-06-02 |
US20130109142A1 (en) | 2013-05-02 |
US20120164803A1 (en) | 2012-06-28 |
US20070072376A1 (en) | 2007-03-29 |
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