CN1959957B - 使用应变硅用于晶体管的集成设计方法和结构 - Google Patents
使用应变硅用于晶体管的集成设计方法和结构 Download PDFInfo
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- CN1959957B CN1959957B CN200510110068A CN200510110068A CN1959957B CN 1959957 B CN1959957 B CN 1959957B CN 200510110068 A CN200510110068 A CN 200510110068A CN 200510110068 A CN200510110068 A CN 200510110068A CN 1959957 B CN1959957 B CN 1959957B
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- 229910052710 silicon Inorganic materials 0.000 title claims description 42
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- AYHOQSGNVUZKJA-UHFFFAOYSA-N [B+3].[B+3].[B+3].[B+3].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] Chemical compound [B+3].[B+3].[B+3].[B+3].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] AYHOQSGNVUZKJA-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (19)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200510110068A CN1959957B (zh) | 2005-10-31 | 2005-10-31 | 使用应变硅用于晶体管的集成设计方法和结构 |
US11/471,035 US7547595B2 (en) | 2005-10-31 | 2006-06-19 | Integration scheme method and structure for transistors using strained silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200510110068A CN1959957B (zh) | 2005-10-31 | 2005-10-31 | 使用应变硅用于晶体管的集成设计方法和结构 |
Publications (2)
Publication Number | Publication Date |
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CN1959957A CN1959957A (zh) | 2007-05-09 |
CN1959957B true CN1959957B (zh) | 2010-05-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN200510110068A Active CN1959957B (zh) | 2005-10-31 | 2005-10-31 | 使用应变硅用于晶体管的集成设计方法和结构 |
Country Status (2)
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US (1) | US7547595B2 (zh) |
CN (1) | CN1959957B (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100642747B1 (ko) * | 2004-06-22 | 2006-11-10 | 삼성전자주식회사 | Cmos 트랜지스터의 제조방법 및 그에 의해 제조된cmos 트랜지스터 |
CN100442476C (zh) | 2005-09-29 | 2008-12-10 | 中芯国际集成电路制造(上海)有限公司 | 用于cmos技术的应变感应迁移率增强纳米器件及工艺 |
CN1959959B (zh) * | 2005-10-31 | 2010-04-21 | 中芯国际集成电路制造(上海)有限公司 | 使用应变硅用于集成pmos和nmos晶体管的单掩模设计方法和结构 |
US7585790B2 (en) * | 2006-07-20 | 2009-09-08 | United Microelectronics Corp. | Method for forming semiconductor device |
US8642441B1 (en) * | 2006-12-15 | 2014-02-04 | Spansion Llc | Self-aligned STI with single poly for manufacturing a flash memory device |
CN101226899A (zh) * | 2007-01-19 | 2008-07-23 | 中芯国际集成电路制造(上海)有限公司 | 在硅凹陷中后续外延生长应变硅mos晶片管的方法和结构 |
FR2913527B1 (fr) * | 2007-03-05 | 2009-05-22 | Commissariat Energie Atomique | Procede de fabrication d'un substrat mixte et utilisation du substrat pour la realisation de circuits cmos |
CN101364545B (zh) * | 2007-08-10 | 2010-12-22 | 中芯国际集成电路制造(上海)有限公司 | 应变硅晶体管的锗硅和多晶硅栅极结构 |
CN101572263B (zh) * | 2008-04-30 | 2012-01-18 | 中芯国际集成电路制造(北京)有限公司 | 互补金属氧化物半导体器件及其制作方法 |
US8202776B2 (en) * | 2009-04-22 | 2012-06-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for protecting a gate structure during contact formation |
CN102024761A (zh) * | 2009-09-18 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | 用于形成半导体集成电路器件的方法 |
CN102760690B (zh) * | 2011-04-29 | 2014-04-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法和晶片 |
US8574995B2 (en) * | 2011-11-10 | 2013-11-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain doping method in 3D devices |
US8735991B2 (en) * | 2011-12-01 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | High gate density devices and methods |
CN103165447B (zh) * | 2011-12-08 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其制作方法 |
CN103308772B (zh) * | 2012-03-16 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体检测电路及检测方法 |
US8847315B2 (en) | 2012-05-07 | 2014-09-30 | Qualcomm Incorporated | Complementary metal-oxide-semiconductor (CMOS) device and method |
US9117691B2 (en) * | 2012-12-28 | 2015-08-25 | Texas Instruments Incorporated | Low cost transistors |
KR102061265B1 (ko) | 2013-07-23 | 2019-12-31 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
CN104733388B (zh) * | 2013-12-20 | 2017-10-31 | 中芯国际集成电路制造(上海)有限公司 | 高介电常数绝缘层金属栅半导体器件制造方法 |
US9472671B1 (en) * | 2015-10-31 | 2016-10-18 | International Business Machines Corporation | Method and structure for forming dually strained silicon |
Citations (1)
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CN1153300C (zh) * | 1997-12-03 | 2004-06-09 | 松下电器产业株式会社 | 半导体装置 |
Family Cites Families (6)
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US6410377B1 (en) * | 2000-11-06 | 2002-06-25 | Ching-Chun Hwang | Method for integrating CMOS sensor and high voltage device |
US6849492B2 (en) * | 2002-07-08 | 2005-02-01 | Micron Technology, Inc. | Method for forming standard voltage threshold and low voltage threshold MOSFET devices |
US6894353B2 (en) * | 2002-07-31 | 2005-05-17 | Freescale Semiconductor, Inc. | Capped dual metal gate transistors for CMOS process and method for making the same |
US7855126B2 (en) * | 2004-06-17 | 2010-12-21 | Samsung Electronics Co., Ltd. | Methods of fabricating a semiconductor device using a cyclic selective epitaxial growth technique and semiconductor devices formed using the same |
CN1808268B (zh) * | 2005-01-18 | 2010-10-06 | 中芯国际集成电路制造(上海)有限公司 | 用于应变硅mos晶体管的金属硬掩模方法和结构 |
CN1941296A (zh) * | 2005-09-28 | 2007-04-04 | 中芯国际集成电路制造(上海)有限公司 | 应变硅cmos晶体管的原位掺杂硅锗与碳化硅源漏极区 |
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2005
- 2005-10-31 CN CN200510110068A patent/CN1959957B/zh active Active
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2006
- 2006-06-19 US US11/471,035 patent/US7547595B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1153300C (zh) * | 1997-12-03 | 2004-06-09 | 松下电器产业株式会社 | 半导体装置 |
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US7547595B2 (en) | 2009-06-16 |
US20070099369A1 (en) | 2007-05-03 |
CN1959957A (zh) | 2007-05-09 |
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