CN1905209A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN1905209A CN1905209A CNA2006100092136A CN200610009213A CN1905209A CN 1905209 A CN1905209 A CN 1905209A CN A2006100092136 A CNA2006100092136 A CN A2006100092136A CN 200610009213 A CN200610009213 A CN 200610009213A CN 1905209 A CN1905209 A CN 1905209A
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
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Abstract
Description
Claims (28)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2005215479 | 2005-07-26 | ||
JP2005215479 | 2005-07-26 | ||
JP2005-215479 | 2005-07-26 |
Publications (2)
Publication Number | Publication Date |
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CN1905209A true CN1905209A (zh) | 2007-01-31 |
CN1905209B CN1905209B (zh) | 2010-08-18 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2006100092136A Expired - Fee Related CN1905209B (zh) | 2005-07-26 | 2006-02-14 | 半导体器件及其制造方法 |
Country Status (4)
Country | Link |
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US (2) | US20070023845A1 (zh) |
KR (1) | KR100735808B1 (zh) |
CN (1) | CN1905209B (zh) |
TW (1) | TWI282624B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7732878B2 (en) | 2006-10-18 | 2010-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS devices with continuous contact etch stop layer |
CN101320711B (zh) * | 2007-06-05 | 2010-11-17 | 联华电子股份有限公司 | 金属氧化物半导体晶体管及其制作方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009026955A (ja) * | 2007-07-19 | 2009-02-05 | Panasonic Corp | 半導体装置及びその製造方法 |
KR20090012573A (ko) * | 2007-07-30 | 2009-02-04 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US8361311B2 (en) | 2010-07-09 | 2013-01-29 | Exxonmobil Chemical Patents Inc. | Integrated vacuum resid to chemicals conversion process |
US8399729B2 (en) | 2010-07-09 | 2013-03-19 | Exxonmobil Chemical Patents Inc. | Integrated process for steam cracking |
CN103154203B (zh) | 2010-07-09 | 2015-11-25 | 埃克森美孚化学专利公司 | 蒸汽裂化的整合方法 |
SG185809A1 (en) | 2010-07-09 | 2013-01-30 | Exxonmobil Chem Patents Inc | Integrated vacuum resid to chemicals coversion process |
CN104637799B (zh) * | 2014-12-31 | 2017-09-29 | 吉林华微电子股份有限公司 | 全自对准高密度沟槽栅场效应半导体器件制造方法 |
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KR960000961B1 (ko) * | 1987-11-30 | 1996-01-15 | 가부시끼가이샤 히다찌세이사꾸쇼 | 반도체 집적회로장치 |
US5194749A (en) * | 1987-11-30 | 1993-03-16 | Hitachi, Ltd. | Semiconductor integrated circuit device |
JP2621805B2 (ja) | 1994-07-30 | 1997-06-18 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2848481B2 (ja) | 1995-02-08 | 1999-01-20 | 日本電気株式会社 | 半導体装置の製造方法 |
US6380558B1 (en) * | 1998-12-29 | 2002-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US6562718B1 (en) * | 2000-12-06 | 2003-05-13 | Advanced Micro Devices, Inc. | Process for forming fully silicided gates |
KR100493206B1 (ko) | 2001-01-16 | 2005-06-03 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체장치 및 그 제조방법 |
JP2002217410A (ja) | 2001-01-16 | 2002-08-02 | Hitachi Ltd | 半導体装置 |
JP2003273206A (ja) * | 2002-03-18 | 2003-09-26 | Fujitsu Ltd | 半導体装置とその製造方法 |
JP4173672B2 (ja) | 2002-03-19 | 2008-10-29 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
TWI249843B (en) * | 2002-05-14 | 2006-02-21 | Sony Corp | Semiconductor device and its manufacturing method, and electronic apparatus |
KR100481864B1 (ko) | 2002-10-29 | 2005-04-11 | 삼성전자주식회사 | 반도체 소자의 형성방법 |
JP4557508B2 (ja) | 2003-06-16 | 2010-10-06 | パナソニック株式会社 | 半導体装置 |
US20050156208A1 (en) * | 2003-09-30 | 2005-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device having multiple silicide types and a method for its fabrication |
US20060267106A1 (en) * | 2005-05-26 | 2006-11-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Novel semiconductor device with improved channel strain effect |
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2006
- 2006-01-24 TW TW095102622A patent/TWI282624B/zh not_active IP Right Cessation
- 2006-01-24 US US11/337,556 patent/US20070023845A1/en not_active Abandoned
- 2006-02-08 KR KR1020060011934A patent/KR100735808B1/ko active IP Right Grant
- 2006-02-14 CN CN2006100092136A patent/CN1905209B/zh not_active Expired - Fee Related
-
2010
- 2010-05-21 US US12/785,016 patent/US8324040B2/en not_active Expired - Fee Related
Cited By (3)
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US7732878B2 (en) | 2006-10-18 | 2010-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS devices with continuous contact etch stop layer |
CN101165917B (zh) * | 2006-10-18 | 2010-07-21 | 台湾积体电路制造股份有限公司 | 具有连续接触蚀刻停止层的金属氧化物半导体元件及其制造方法 |
CN101320711B (zh) * | 2007-06-05 | 2010-11-17 | 联华电子股份有限公司 | 金属氧化物半导体晶体管及其制作方法 |
Also Published As
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KR20070013993A (ko) | 2007-01-31 |
US20070023845A1 (en) | 2007-02-01 |
TWI282624B (en) | 2007-06-11 |
US8324040B2 (en) | 2012-12-04 |
TW200705661A (en) | 2007-02-01 |
CN1905209B (zh) | 2010-08-18 |
KR100735808B1 (ko) | 2007-07-06 |
US20100233860A1 (en) | 2010-09-16 |
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