CN1920673B - 抗蚀剂除去方法以及抗蚀剂除去装置 - Google Patents
抗蚀剂除去方法以及抗蚀剂除去装置 Download PDFInfo
- Publication number
- CN1920673B CN1920673B CN2006101257013A CN200610125701A CN1920673B CN 1920673 B CN1920673 B CN 1920673B CN 2006101257013 A CN2006101257013 A CN 2006101257013A CN 200610125701 A CN200610125701 A CN 200610125701A CN 1920673 B CN1920673 B CN 1920673B
- Authority
- CN
- China
- Prior art keywords
- hydrogen peroxide
- substrate
- sulfuric acid
- mentioned
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005246373A JP4672487B2 (ja) | 2005-08-26 | 2005-08-26 | レジスト除去方法およびレジスト除去装置 |
JP2005-246373 | 2005-08-26 | ||
JP2005246373 | 2005-08-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1920673A CN1920673A (zh) | 2007-02-28 |
CN1920673B true CN1920673B (zh) | 2011-05-11 |
Family
ID=37778421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101257013A Active CN1920673B (zh) | 2005-08-26 | 2006-08-25 | 抗蚀剂除去方法以及抗蚀剂除去装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7427333B2 (zh) |
JP (1) | JP4672487B2 (zh) |
KR (1) | KR20070024378A (zh) |
CN (1) | CN1920673B (zh) |
TW (1) | TWI307528B (zh) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4439956B2 (ja) * | 2004-03-16 | 2010-03-24 | ソニー株式会社 | レジスト剥離方法およびレジスト剥離装置 |
JP4644170B2 (ja) * | 2006-09-06 | 2011-03-02 | 栗田工業株式会社 | 基板処理装置および基板処理方法 |
JP4863897B2 (ja) * | 2007-01-31 | 2012-01-25 | 東京エレクトロン株式会社 | 基板洗浄装置、基板洗浄方法及び基板洗浄プログラム |
JP5127325B2 (ja) * | 2007-07-03 | 2013-01-23 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP5276420B2 (ja) * | 2008-01-31 | 2013-08-28 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
CN101556429B (zh) * | 2008-04-10 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | 一种控制掩模版cd值的清洗方法 |
CN101789371B (zh) * | 2009-01-23 | 2011-10-05 | 中芯国际集成电路制造(上海)有限公司 | 半导体元器件的清洗方法 |
JP4766156B2 (ja) * | 2009-06-11 | 2011-09-07 | 日新イオン機器株式会社 | イオン注入装置 |
CN102043355A (zh) * | 2009-10-23 | 2011-05-04 | 联华电子股份有限公司 | 移除光致抗蚀剂的方法 |
JP2011129651A (ja) * | 2009-12-16 | 2011-06-30 | Renesas Electronics Corp | 半導体装置の製造方法、基板処理装置、および、プログラム |
JP5460633B2 (ja) | 2010-05-17 | 2014-04-02 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録した記録媒体 |
CN101968610A (zh) * | 2010-08-12 | 2011-02-09 | 武汉华灿光电有限公司 | 一种全湿刻蚀后去胶的方法 |
CN102466988B (zh) * | 2010-11-03 | 2014-05-07 | 中国科学院微电子研究所 | 高温水蒸气和水混合射流清洗系统及方法 |
JP6168271B2 (ja) | 2012-08-08 | 2017-07-26 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6232212B2 (ja) * | 2012-08-09 | 2017-11-15 | 芝浦メカトロニクス株式会社 | 洗浄液生成装置及び基板洗浄装置 |
JP2014224981A (ja) * | 2013-04-25 | 2014-12-04 | 旭硝子株式会社 | フォトマスク用ガラス基板の洗浄方法 |
JP5992379B2 (ja) * | 2013-08-23 | 2016-09-14 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP6188139B2 (ja) * | 2013-09-02 | 2017-08-30 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6191954B2 (ja) * | 2013-09-02 | 2017-09-06 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
KR102239421B1 (ko) * | 2013-09-02 | 2021-04-12 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 방법 및 기판 처리 장치 |
JP6191953B2 (ja) * | 2013-09-02 | 2017-09-06 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US10464107B2 (en) | 2013-10-24 | 2019-11-05 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
JP6276979B2 (ja) * | 2013-12-04 | 2018-02-07 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6501448B2 (ja) * | 2014-02-28 | 2019-04-17 | 芝浦メカトロニクス株式会社 | 処理装置および処理方法 |
CN104181782B (zh) * | 2014-09-04 | 2018-03-02 | 苏州市晶协高新电子材料有限公司 | 一种uv固化胶的脱胶剂及其制备方法和脱胶方法 |
JP6493839B2 (ja) | 2015-03-24 | 2019-04-03 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7403320B2 (ja) * | 2020-01-07 | 2023-12-22 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7508296B2 (ja) * | 2020-07-14 | 2024-07-01 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
TW202220027A (zh) * | 2020-10-09 | 2022-05-16 | 日商東京威力科創股份有限公司 | 基板處理方法及基板處理裝置 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3900337A (en) * | 1974-04-05 | 1975-08-19 | Ibm | Method for stripping layers of organic material |
GB9027960D0 (en) * | 1990-12-22 | 1991-02-13 | Interox Chemicals Ltd | Manufacture of peroxidic compositions |
US5364510A (en) * | 1993-02-12 | 1994-11-15 | Sematech, Inc. | Scheme for bath chemistry measurement and control for improved semiconductor wet processing |
JP3277404B2 (ja) | 1993-03-31 | 2002-04-22 | ソニー株式会社 | 基板洗浄方法及び基板洗浄装置 |
KR960042993A (ko) | 1995-05-12 | 1996-12-21 | 김광호 | 반도체 장치의 세정방법 |
JP2826082B2 (ja) * | 1995-08-17 | 1998-11-18 | リソテック ジャパン株式会社 | ピラニア洗浄工程における薬液濃度管理方法 |
US6032682A (en) * | 1996-06-25 | 2000-03-07 | Cfmt, Inc | Method for sulfuric acid resist stripping |
US6240933B1 (en) * | 1997-05-09 | 2001-06-05 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
US6573141B1 (en) * | 1999-03-12 | 2003-06-03 | Zilog, Inc. | In-situ etch and pre-clean for high quality thin oxides |
US6399513B1 (en) * | 1999-11-12 | 2002-06-04 | Texas Instruments Incorporated | Ozonated DI water process for organic residue and metal removal processes |
JP2002076272A (ja) * | 2000-08-23 | 2002-03-15 | Sony Corp | 半導体装置の製造方法 |
TWI220060B (en) * | 2001-05-10 | 2004-08-01 | Macronix Int Co Ltd | Cleaning method of semiconductor wafer |
JP4678665B2 (ja) * | 2001-11-15 | 2011-04-27 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
US6726848B2 (en) * | 2001-12-07 | 2004-04-27 | Scp Global Technologies, Inc. | Apparatus and method for single substrate processing |
JP2003215002A (ja) * | 2002-01-17 | 2003-07-30 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
WO2003090792A2 (en) * | 2002-04-26 | 2003-11-06 | Phifer Smith Corporation | Method and apparatus for treating a substrate with an ozone-solvent solution iii |
JP2005032819A (ja) | 2003-07-08 | 2005-02-03 | Dainippon Screen Mfg Co Ltd | レジスト剥離装置およびレジスト剥離方法 |
JP2005093926A (ja) | 2003-09-19 | 2005-04-07 | Trecenti Technologies Inc | 基板処理装置および基板処理方法 |
JP2005109167A (ja) * | 2003-09-30 | 2005-04-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
US7223308B2 (en) * | 2003-10-06 | 2007-05-29 | Applied Materials, Inc. | Apparatus to improve wafer temperature uniformity for face-up wet processing |
JP2005183937A (ja) * | 2003-11-25 | 2005-07-07 | Nec Electronics Corp | 半導体装置の製造方法およびレジスト除去用洗浄装置 |
JP2005191030A (ja) * | 2003-12-24 | 2005-07-14 | Sharp Corp | レジスト除去装置およびレジスト除去方法 |
JP4439956B2 (ja) * | 2004-03-16 | 2010-03-24 | ソニー株式会社 | レジスト剥離方法およびレジスト剥離装置 |
US7354869B2 (en) * | 2004-04-13 | 2008-04-08 | Kabushiki Kaisha Toshiba | Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method |
US20060196527A1 (en) * | 2005-02-23 | 2006-09-07 | Tokyo Electron Limited | Method of surface processing substrate, method of cleaning substrate, and programs for implementing the methods |
WO2007062111A1 (en) * | 2005-11-23 | 2007-05-31 | Fsi International, Inc. | Process for removing material from substrates |
-
2005
- 2005-08-26 JP JP2005246373A patent/JP4672487B2/ja active Active
-
2006
- 2006-08-22 KR KR1020060079448A patent/KR20070024378A/ko not_active Application Discontinuation
- 2006-08-25 TW TW095131358A patent/TWI307528B/zh active
- 2006-08-25 US US11/467,316 patent/US7427333B2/en active Active
- 2006-08-25 CN CN2006101257013A patent/CN1920673B/zh active Active
-
2008
- 2008-08-15 US US12/192,238 patent/US8075702B2/en active Active
Non-Patent Citations (1)
Title |
---|
JP特开2005-93926A 2005.04.07 |
Also Published As
Publication number | Publication date |
---|---|
US8075702B2 (en) | 2011-12-13 |
KR20070024378A (ko) | 2007-03-02 |
US20070045231A1 (en) | 2007-03-01 |
JP2007059816A (ja) | 2007-03-08 |
JP4672487B2 (ja) | 2011-04-20 |
US7427333B2 (en) | 2008-09-23 |
TWI307528B (en) | 2009-03-11 |
CN1920673A (zh) | 2007-02-28 |
TW200715398A (en) | 2007-04-16 |
US20080293252A1 (en) | 2008-11-27 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: DAINIPPON SCREEN MFG. CO., LTD. Free format text: FORMER NAME: DAINIPPON MESH PLATE MFR. CO., LTD. Owner name: SCREEN GROUP CO., LTD. Free format text: FORMER NAME: DAINIPPON SCREEN MFG. CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kyoto City, Kyoto, Japan Patentee after: Skilling Group Address before: Kyoto City, Kyoto, Japan Patentee before: DAINIPPON SCREEN MFG Co.,Ltd. Address after: Kyoto City, Kyoto, Japan Patentee after: DAINIPPON SCREEN MFG Co.,Ltd. Address before: Kyoto City, Kyoto, Japan Patentee before: Dainippon Screen Mfg. Co.,Ltd. |