CN1906745A - 电子装置和使用其的半导体装置及半导体装置的制造方法 - Google Patents

电子装置和使用其的半导体装置及半导体装置的制造方法 Download PDF

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CN1906745A
CN1906745A CNA2005800017088A CN200580001708A CN1906745A CN 1906745 A CN1906745 A CN 1906745A CN A2005800017088 A CNA2005800017088 A CN A2005800017088A CN 200580001708 A CN200580001708 A CN 200580001708A CN 1906745 A CN1906745 A CN 1906745A
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metal material
film
face
semiconductor
projection
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CN100511613C (zh
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藤井贞雅
西冈太郎
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Rohm Co Ltd
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Abstract

本发明提供一种电子装置，其中包括：基板；凸起，其形成于基板表面，由第1金属材料构成；接合膜，其形成于该凸起的顶面，由单体状态融点比与所述第1金属材料的合金融点更低的第2金属材料构成，用于与其他装置的电连接部接合；防扩散膜，其介入于所述凸起顶面和所述接合膜之间，由相对于所述第1金属材料的扩散系数比所述第2金属材料更低的第3金属材料构成，覆盖所述凸起顶面的至少一部分而形成。

Description

电子装置和使用其的半导体装置及半导体装置的制造方法
技术领域
本发明涉及半导体芯片与布线基板等电子装置和使用该装置构成的半导体装置以及半导体装置的制造方法。
背景技术
通过在半导体芯片上接合其它半导体芯片，或将半导体芯片倒装焊接(flip chip bonding)于布线基板的表面而构成的半导体装置中，在半导体芯片的表面设置由金(Au)或铜(Cu)构成的凸起(bump)。该凸起的顶面，形成有比凸起材料的融点(溶融温度)低的作为接合用金属膜的锡(Sn)或铟(In)的薄膜，在与对方的半导体芯片或布线基板接合时，该接合用金属膜被加热溶融，然后冷却硬化。这样，完成与对方装置的机械接合及电连接。
接合用金属膜，希望尽可能形成为薄膜，具体地说，需要0.1～5μm范围内的薄膜。这是因为：若使接合用金属膜为厚膜，则由于半导体使用时发热而体积膨胀，或溶融和扩散后对其它装置产生不良影响，而且还会损害溶融接合时的稳定性。
但是，由于凸起的材料(具体为Au或Cu)为易扩散金属，所以接合用金属膜大部分为合金膜(例如，Au-Sn合金膜)，这样，就具有比接合用金属膜材料单体状态的融点(例如，Sn单体的融点为232℃)更高的融点(例如，280℃)。因此，溶融接合时，需要进行高温热处理，恐怕会对半导体芯片的特性产生不良影响。
该问题可以通过使接合用金属膜为厚膜来解决，但那样会产生上述的不良状况。
发明内容
本发明的目的在于，提供一种即使为薄的接合膜也能够进行较低温度下的溶融接合的电子装置以及使用该装置的半导体装置。
进而，本发明的其它目的在于，提供一种能够在控制对元件特性影响的同时将半导体芯片接合到半导体基板上的半导体装置的制造方法。
本发明的电子装置，其中包括：基板；凸起，其形成于基板表面，由第1金属材料(例如Au或Cu)构成；接合膜，其形成于该凸起的顶面上，由单体状态融点比与上述第1金属材料的合金的融点更低的第2金属材料(例如Sn、In或Sn-In合金)构成，用于与其他装置的电连接部接合；和防扩散膜，其介入于上述凸起顶面和上述接合膜之间，由相对于上述第1金属材料的扩散系数比上述第2金属材料更低的第3金属材料(例如TiW)构成，覆盖上述凸起顶面的至少一部分而形成。
在此，“单体状态”是指未形成第1金属材料和第2金属材料的合金(特别是通过相互扩散产生的合金)的状态，除了由单一金属元件构成的情况之外，也包括第2金属材料为含有第1金属材料以外的金属元素的合金的情况。
根据上述结构，形成于防扩散膜上的接合膜，即使是薄膜状态，由于不发生和凸起材料的相互扩散，所以能够保持作为其材料金属的第2金属材料的单体状态。所以，虽然是薄的接合膜，但能够在低融点下溶融，在和其它装置的电连接部接合时，可以进行比较低的温度下的溶融接合。
另外，希望构成上述接合膜的第2金属材料为比构成上述防扩散膜的第3金属材料融点更低的材料。
希望上述防扩散膜覆盖上述凸起的顶面的全部区域，上述接合膜全部形成于上述防扩散膜上。
根据该结构，由于能够确实阻止凸起材料和接合膜材料的相互扩散，所以接合膜可以在其全部区域中保持较低融点的第2金属材料单体的状态，能够进行低温下的溶融接合。
上述防扩散膜可以形成为：覆盖上述凸起的顶面的一部分且露出其余部分。该情况下，希望上述接合膜具有：形成于上述防扩散膜上的部分；和与上述凸起的顶面接合而形成的部分。
根据该结构，接合膜的防扩散膜上所形成的部分保持第2金属材料单体的状态，与凸起的顶面接合而形成的部分通过相互扩散而成为第1和第2金属材料的合金膜。并且，第2金属材料单体部的分有助于低温下的溶融接合，合金膜部分有助于提高凸起和接合膜的接合强度(进而提高与对方装置的接合强度)。这样，能够同时实现低温下的溶融接合和充分的接合强度。
上述基板可以是半导体基板，上述电子装置可以是半导体芯片。根据该结构，可以得到具有能够在低温下溶融接合的凸起的半导体芯片。
另外，上述基板也可以是在绝缘基板上形成布线导体的布线基板，该情况下，希望上述凸起以接合在上述布线导体上的状态设置于上述布线基板上。根据该结构，可以得到具有能够在低温下溶融接合的凸起的布线基板。对于该布线基板，能够利用上述凸起来接合半导体芯片等其它电子装置。
本发明的半导体装置，是使分别具有凸起的第1半导体芯片和第2半导体芯片通过凸起间接合而进行结合的片上片结构的半导体装置，上述第1半导体芯片和第2半导体芯片中的至少任一方，由上述结构的电子装置构成。根据该结构，可以得到片上片结构的半导体装置，两个芯片的凸起之间的接合通过低温下的溶融接合工序来进行。
另外，本发明的其它半导体装置，其中包括：布线基板，其在绝缘基板上形成布线导体；上述电子装置，其使上述凸起与该布线基板对向而接合于上述布线导体。根据该结构，可以得到所谓的倒装接合型半导体装置，通过低温溶融接合工序来进行半导体芯片向布线基板的倒装接合。
本发明的半导体装置的制造方法，是通过介由凸起将半导体芯片接合于半导体基板(例如半导体晶片)上而用来制造半导体装置的方法。上述凸起形成于上述半导体基板和半导体芯片的至少任一方的表面上，上述凸起由第1金属材料构成；该凸起的顶面上形成由单体状态融点比与上述第1金属材料合金的融点更低的第2金属材料构成的接合膜；在上述凸起的顶面和上述接合膜之间，形成相对于上述第1金属材料的扩散系数比上述第2金属材料更低的第3金属材料构成的防扩散膜，以便覆盖上述凸起的顶面的一部分、并且露出其余部分；上述接合膜具有：上述防扩散膜上所形成的部分；和与上述凸起的顶面接合而形成的部分。并且，上述方法包括：临时接合工序，其以上述半导体芯片夹着上述凸起而配置于半导体基板上的状态，通过在上述第2金属材料单体状态融点以上而低于上述第1金属材料和第2金属材料的合金的融点的第1温度下加热上述接合膜，而将上述半导体芯片临时接合于上述半导体基板上；正式接合工序，其在该临时接合工序之后，通过在上述第1金属材料和第2金属材料的合金的融点以上的第2温度下加热上述接合膜，而将上述半导体芯片正式接合于上述半导体基板。
根据该方法，在临时接合工序中，能够通过在较低温度下加热使防扩散膜上的接合膜(第2金属材料单体状态的膜)溶融来完成半导体芯片和半导体基板的接合。然后，通过在较高温度下的加热，能够使与上述凸起顶面接合的接合膜(第1和第2金属材料的合金膜)溶融来弥补接合膜与防扩散膜之间的接合强度不足，使半导体芯片牢固接合于半导体基板。
上述正式接合工序，希望在将多个半导体芯片临时接合于上述半导体基板上之后进行。
根据该方法，由于能够对临时接合后的多个半导体芯片一并进行上述正式接合工序，所以可以缩短制造工序，并且由于半导体基板和半导体芯片所经历的高温加热处理次数减少，所以能够良好保持形成于其上的元件的特性。
例如，在通过上述临时接合将多个半导体芯片接合到半导体晶片上后，对这多个半导体芯片一并进行上述正式接合，然后，按每个包含一个以上规定个数的半导体芯片的区域，切断(dicing)半导体基板而进行个片化处理，这样可以得到多个片上片结构的半导体装置。
本发明中上述的或其它的目的、特征和效果可以通过如下参照附图对实施方式所做的说明而更加明确。
附图说明
图1是用于说明本发明的一实施方式的半导体装置的结构的图解剖面图；
图2是用于说明形成于构成上述半导体装置的母芯片上的凸起的详细结构的剖面图；
图3(a)是表示上述凸起的其它结构例的剖面图，图3(b)是其平面图；
图4(a)是表示上述凸起的再一结构例的剖面图，图4(b)是其平面图；
图5(a)是表示上述凸起的又一结构例的剖面图，图5(b)是其平面图；
图6是用于说明本发明的其它实施方式的半导体装置的结构的图解剖面图；
图7是对图6半导体装置中布线基板侧凸起附近的结构进行放大表示的图解剖面图；
图8是用于说明本发明其它实施方式涉及的半导体装置制造工序的图解立体图。
具体实施方式
图1是用于说明本发明的一实施方式的半导体装置的结构的图解剖面图。该半导体装置，具有所谓的片上片(chip on chip)结构，通过在母片1上接合子片2和3而构成。母片1和子片2、3都是半导体芯片(例如硅片)，是以使子片2、3的活性面对向于母片1的活性面(形成有器件的活性领域侧表面)的面对面的状态接合的。更具体地说，母片1以活性面朝上的姿势焊接在引线框架5的岛(island)6上，在该母片1的上面，子片2、3被以面朝下的姿势接合。母片1的活性面具有与外部连接用的焊盘(图中未表示)，该焊盘(pad)通过焊线(bonding wire)8而电连接于引线框架5的引线部7。并且，通过密封树脂9来密封母片1、子片2和3、焊线8和引线框架5而构成半导体封装(package)。引线部7的一部分，从密封树脂9露出，作为外部连接部(外部引线部)发挥作用。
在母片1和子片2、3的活性面上，分别形成有多个凸起B1、B2和B3。母片1的凸起B1和子片2的凸起B2互相接合，另外，母片1的凸起B1和子片3的凸起B3互相接合。这样，母片1和子片2通过凸起B1、B2进行电连接，且进行机械接合。同样，母片1和子片3通过凸起B1、B3进行电连接，且进行机械接合。
图2是用于说明形成于母片1上的凸起B1的详细结构的剖面图。在成为半导体主体部的半导体基板(例如硅基板)11的表面上，例如形成多层布线结构。其最上层的布线层(或者金属焊盘)12的一部分，从形成于表面保护膜13上的开口露出，为了覆盖该开口，例如由金(Au)构成的凸起B1，从表面保护膜13隆起而形成。在该凸起B1顶面的全部区域内，形成用于防止凸起B1的材料扩散的防扩散膜14，该防扩散膜14上，形成有例如由锡(Sn)构成的接合膜15。总之，接合膜15全部形成在防扩散膜14上。接合膜15的膜厚在0.1μm以上5μm以下。
作为接合膜15的材料Sn(融点为232℃)，比作为凸起B1的材料Au融点更低，而且，其与作为凸起B1的材料Au的合金(Au-Sn。融点为280℃)相比，单体状态的融点低。另外，凸起B1是由比防扩散膜14材料的融点更低的材料构成的。
防扩散膜14，例如由TiW膜构成。作为该防扩散膜14的材料TiW相对于作为凸起B1的材料Au的扩散系数，比作为接合膜15的材料Sn更低。另外，防扩散膜14的膜厚为200以上。防扩散膜14的膜厚若小于200，则Au和Sn的防扩散会不充分。
凸起B1的形成，通过电镀工序来进行。另外，防扩散膜14的形成，通过电镀工序或喷镀(spatter)工序来进行。进而，接合膜15的形成，通过电镀工序或喷镀工序来进行。
子片2、3的凸起B2、B3，例如由Au构成。关于这些凸起B2、B3，其表面上也可以设置和凸起B1同样的防扩散膜或接合膜，但一般不需要设置。
在向母片1上接合子片2、3时，使凸起B1和凸起B2、B3对位，并使它们的顶面互相对接。然后，例如通过加热母片1，从而接合膜15被加热到作为其材料Sn的融点以上的温度。这样，由于接合膜15溶融，然后，若加热停止，则接合膜15会冷却固化，就可以接合凸起B1和凸起B2、B3。
由于防扩散膜14的作用，形成于其上的接合膜15，不会发生与凸起B1的材料的相互扩散而保持Sn单体的状态。因此，接合膜15能够在远低于Au-Sn合金的融点的温度(232℃左右)的加热下较容易的溶融。这样，由于能够通过低温下的溶融接合工序来完成良好的接合，所以可以良好地保持母片1和子片2、3上形成的元件的特性。
图3(a)是表示凸起B1的其它结构例的剖面图，图3(b)是其平面图。在该结构例中，防扩散膜14仅形成于凸起B1顶面的中央区域，而凸起B1顶面的边缘部区域露出。并且，接合膜15形成为：覆盖防扩散膜14，并且也覆盖凸起B1顶面的露出区域。即在该结构例中，接合膜15具有：存在于位于防扩散膜14上的中央区域内的单体区域15A；存在于与凸起B1顶面接触的环状区域(边缘部区域)内的合金区域15B。由于单体区域15A不发生与作为凸起B1的材料的Au的相互扩散，所以由单体Sn构成。因而，该单体领域15A的融点约为232℃。合金区域15B由与作为凸起B1的材料的Au相互扩散而产生的Au-Sn合金构成。因而，该合金区域15B的融点约为280℃。
上述结构，可以在凸起B1顶面全部区域内形成防扩散膜14后，再通过光刻工序对该防扩散膜14进行图案化而形成。
由Sn构成的接合膜15与由TiW构成的防扩散膜14之间的接合强度(密接性)未必良好。因此，利用单体区域15A进行凸起之间的临时接合工序，然后利用合金区域15B进行正式接合工序，这样能够得到充分的接合强度。
在向母片1上接合子片2、3时，使凸起B1和凸起B2、B3对位，并使它们的顶面互相对接，例如通过加热母片1，接合膜15被加热到作为其材料Sn的融点以上的温度(但是，低于Au-Sn的融点的温度)。这样，由于接合膜15的单体区域15A溶融，然后，若加热停止则接合膜15会冷却固化，就可以临时接合凸起B1和凸起B2、B3。
在将应该接合在母片1上的全部子片2、3临时接合后，加热母片1，将接合膜15加热到能够使合金区域15B溶融的温度(约280℃以上)。由此，由于合金区域15B溶融，故之后若停止加热则接合膜15冷却固化，就可以在合金区域15B内牢固接合凸起B1和凸起B2、B3。这样，防扩散膜14存在的单体区域15A中的接合强度不足，通过防扩散膜14不存在的合金区域15B的接合来弥补而完成正式接合。
作为高温溶融接合工序的正式接合工序，由于是在全部子片2、3接合到母片1上后进行的，所以是仅进行一次的工序。因此，能够将对母片1和子片2、3的加热次数控制在最小限度，可以良好保持其上形成的元件的特性。
图4(a)是表示凸起B1的又一结构例的剖面图，图4(b)是其平面图。在该结构例中，防扩散膜14形成为：使凸起B1顶面的中央部分和边缘部分露出并覆盖剩余的环状区域的环状图案。这样，防扩散膜14，可以通过将防扩散膜14在凸起B1顶面的全部区域形成后，再由光刻工序进行图案化而形成。
接合膜15形成为：覆盖上述防扩散膜14，进而，接触凸起B1的露出部分。所以，接合膜15具有：与比防扩散膜14还靠内侧的中央区域对应的中央合金区域151；作为防扩散膜14上的区域的环状单体区域152；比防扩散膜14还靠外侧的边缘合金区域153。单体区域152是Sn单体的区域，中央合金区域151和边缘合金区域153是由凸起B1的材料和接合膜15的材料相互扩散而产生的Au-Sn合金构成的区域。
母片1和子片2、3的接合工序，与图3(a)和图3(b)的结构例情况相同。但是，在图4(a)和图4(b)的结构例情况下，由于在凸起B1的中央部分和边缘部分，能够得到防扩散膜14不存在的牢固接合，所以可以进一步提高接合强度。
图5(a)是表示凸起B1的再一结构例的剖面图，图5(b)是其平面图。在该结构例中，在凸起B1的顶面形成与图4(a)和图4(b)结构例情况相同的环状的第1防扩散膜14(膜厚200以上)，以覆盖该第1防扩散膜14且覆盖凸起B1顶面的露出部分的方式形成第1接合膜15(膜厚0.1μm～5μm)，进而，在第1接合膜15上，形成覆盖其中央区域且使边缘环状区域露出的第2防扩散膜24(膜厚200以上)，还有，以覆盖该第2防扩散膜24和第1接合膜15露出部分的方式层叠形成第2接合膜25(膜厚0.1μm～5μm)。第1和第2防扩散膜14、24，例如都是由TiW构成的。另外，例如第1接合膜15由Sn构成，第2接合膜25由Sn-In合金构成。Sn-In合金的融点，约为200℃。
在比第1防扩散膜14还靠外侧的区域内，作为凸起B1的材料的Au、作为第1接合膜15的材料的Sn和作为第2接合膜25的材料的Sn-In发生扩散，该区域成为Au-Sn-In合金区域31。在该合金区域31的内侧、比第2防扩散膜24还靠外侧的环状区域内，作为第1接合膜15的材料的Sn和作为第2接合膜25的材料的Sn-In合金发生相互扩散，该区域成为富Sn的Sn-In合金区域32。另外，第2防扩散膜24上的区域成为Sn-In合金的单体区域(Au元素实质上没有混入的状态区域)33。进而，第1防扩散膜14和第2防扩散膜24之间的区域(富Sn的Sn-In合金区域32的内侧)，成为Sn单体区域34。并且，在第2防扩散膜24正下方的中央区域、比第1防扩散膜14还靠内侧的区域中，作为凸起B1的材料的Au和作为第1接合膜15的材料的Sn发生相互扩散，该区域成为Au-Sn合金区域35。
该结构中，由于富Sn的Sn-In合金区域32，能够在约200℃的加热下溶融，所以可以使上述的临时接合工序在更低的温度下进行。
图6是用于说明本发明其它实施方式的半导体装置的结构的图解剖面图。该半导体装置，通过在布线基板40的表面倒装接合半导体芯片50、60而构成。布线基板40包括：绝缘基板41；形成于该绝缘基板41上的布线导体(例如，由Cu构成)42；突出形成于该布线导体42上的多个凸起B40。绝缘基板41的表面，除了凸起B40的部位以外，都是由抗蚀剂或树脂(以下称“抗蚀剂等”)44覆盖的。
半导体芯片50、60以使活性面与布线基板40的表面对向的面朝下姿势接合到布线基板40上。在这些半导体芯片50、60的活性面上，分别设置有多个凸起B50、B60。这些凸起B50、B60分别接合到从形成于抗蚀剂等44的开口露出的凸起B40上，这样完成半导体芯片50、60向布线基板40的接合。
图7是将布线基板40的凸起B40附近结构放大表示的图解剖面图。凸起B40，例如由形成在布线导体42上的Au镀层构成。该凸起B40的顶面，例如通过由TiW构成的膜厚为200以上的防扩散膜70覆盖全部区域，在该防扩散膜70上，形成例如由Sn构成的膜厚为0.1μm以上5μm以下的接合膜55。即，与凸起B40关联的结构，和上述图2所示的凸起B1相关联的结构相同。
所以，不会发生凸起B40的材料和接合膜55的材料的相互扩散，接合膜55成为Sn单体的膜。因此，可以通过在Sn融点(约为232℃)左右的低温下加热来溶融接合膜55，将半导体芯片50、60的凸起B50、B60接合于凸起B40。
半导体芯片50、60的凸起B50、B60，例如由Au构成。这些凸起B50、B60的表面也可以形成防扩散膜和接合膜的层叠结构，但一般不需要。
在只有防扩散膜70和接合膜55之间的密接力而接合强度不足的情况下，在凸起B40上，设置与图3(a)和图3(b)、图4(a)和图4(b)或图5(a)和图5(b)同样的层叠结构即可。这种情况下，首先，通过较低温度(例如232℃左右)的加热使接合膜15、25的单体区域发生溶融，让应该接合的所有的半导体芯片50、60临时接合于布线基板40上，然后，通过短时间的高温加热(280℃左右)而使Au-Sn合金部分或Au-Sn-In合金部分发生溶融，进行正式接合即可。
图8是用于说明本发明其它实施方式的半导体装置的制造工序的图解立体图。在本实施方式中，能够制造片上片结构的半导体装置。具体地说，在半导体晶片(例如硅晶片)W上，预先形成与多个半导体芯片对应的多个芯片区域A，然后在该芯片区域A上，预先形成顶面具有如图3(a)和图3(b)、图4(a)和图4(b)或图5(a)和图5(b)所示的层叠膜的凸起B。对于这种状态的半导体晶片W，通过自动安装机器将多个半导体芯片C分别顺次配置到多个芯片区域A。在朝向半导体芯片C的下方的活性面上形成应该接合在凸起B上的凸起(图中未表示)。
将多个半导体芯片C分别顺次配置到多个芯片区域A时，半导体晶片W能够保持在与上述临时接合工序对应的规定低温(例如232℃左右)。这样，在凸起B上，接合膜的单体部分溶融，与半导体芯片C的凸起临时接合。
在将半导体芯片C准结合到半导体晶片W上的规定的多个芯片区域A(例如，所有的芯片区域A)后，接着在与上述正式接合工序对应的规定高温(例如280℃左右)下对半导体晶片W仅加热规定的短时间。这样，接合膜的合金部分溶融，完成牢固的接合。由于半导体晶片W在280℃左右高温下的加热工序被限定在正式接合工序中的短时间内，所以能够将对半导体晶片W和半导体芯片C上形成的元件特性的影响控制在最小限度，同时能够将半导体芯片C接合在半导体晶片W上。
然后，沿着划线L切断半导体晶片W，分离为各个芯片区域A。这样就得到片上片结构的半导体装置的多张个片。
以上，对本发明的三个实施方式进行了说明，本发明也能够以其它方式实施。例如在上述实施方式中，在母片1、布线基板40和半导体晶片W一侧所设置的凸起顶面上形成了防扩散膜和接合膜，也可以在子片2和3、半导体芯片50和60以及半导体芯片C一侧所设置的凸起顶面上设置防扩散膜和接合膜，而在母片1、布线基板40和半导体晶片W一侧所设置的凸起顶面上不设置防扩散膜和接合膜。
另外，在上述实施方式中对相互接合的凸起都是由Au构成的例子进行了说明，但是凸起的材料，例如也可以是Cu，且相互接合的凸起的材料不必是相同的。即，例如Au凸起和Cu凸起也可以通过接合膜来接合。
另外，不必在互相接合的电子装置(布线基板或者半导体芯片)双方都设置凸起，可以仅在任意一方设置凸起。例如，在布线基板上倒装接合半导体芯片时，可以仅在半导体芯片一侧设置凸起而将该凸起接合到布线基板上的布线导体。这种情况下，只要在半导体芯片的凸起的顶面形成防扩散膜和接合膜的层叠结构即可。
进而，在上述实施方式中，作为接合膜的材料，例举了Sn和Sn-In合金，除此之外，可以采用铟(In)。一般，在凸起的顶面上，只要形成比凸起的材料融点更低的接合膜即可。更具体地说，作为接合膜/凸起材料的组合，可以例举Sn/Au、Sn/Cu、In/Au、In/Cu、In/Sn等。
另外，在上述实施方式中，作为防扩散膜例举了TiW膜，此外，也可以采用Ni膜、Ti膜和Cr膜等作为防扩散膜。但对于任意一种薄膜，为了得到充分的扩散防止功能，都希望膜厚为200以上。
另外，在上述图6和图7的结构中，希望在由Cu构成的布线导体42和由Au构成的凸起B40之间介入Ni层来控制其间的相互扩散。
以上对本发明的实施方式进行了详细说明，但这些只是为了使本发明的技术内容更加明确而使用的具体实例，本发明不应限定于这些具体实例来解释，本发明的精神和范围仅通过所附的技术方案来限定。
本申请与2004年8月11日向日本专利厅提出的特愿2004-234707号相对应，通过在此引用来包含该申请的全部内容。

Claims (9)

1.一种电子装置，包括：
基板；
凸起，其形成于基板表面，由第1金属材料构成；
接合膜，其形成于该凸起的顶面，由单体状态的融点比与所述第1金属材料的合金的融点更低的第2金属材料构成，用于与其他装置的电连接部的接合；和
防扩散膜，其介入于所述凸起顶面和所述接合膜之间，由相对于所述第1金属材料的扩散系数比所述第2金属材料更低的第3金属材料构成，以覆盖所述凸起顶面的至少一部分的方式形成。
2.根据权利要求1所述的电子装置，其中，
所述防扩散膜覆盖所述凸起顶面的全部区域；
所述接合膜全部形成于所述防扩散膜上。
3.根据权利要求1所述的电子装置，其中，
所述防扩散膜形成为：覆盖所述凸起的顶面的一部分且露出其余部分；
所述接合膜具有：形成于所述防扩散膜上的部分；和与所述凸起的顶面接合而形成的部分。
4.根据权利要求1所述的电子装置，其中，
所述基板是半导体基板；
所述电子装置是半导体芯片。
5.根据权利要求1所述的电子装置，其中，
所述基板是在绝缘基板上形成布线导体的布线基板；
所述凸起以接合在所述布线导体上的状态设置于所述布线基板上。
6.一种半导体装置，是使分别具有凸起的第1半导体芯片和第2半导体芯片通过接合凸起彼此之间而进行结合的片上片结构的半导体装置；
所述第1半导体芯片和第2半导体芯片中的至少任一方，由权利要求4所述的电子装置构成。
7.一种半导体装置，包括：
布线基板，其在绝缘基板上形成布线导体；
权利要求4所述的电子装置，其使所述凸起与该布线基板对向、并接合到所述布线导体上。
8.一种半导体装置的制造方法，用于通过借助凸起使半导体芯片结接合到半导体基板上，而制造半导体装置，
所述凸起形成于所述半导体基板和半导体芯片的至少任一方的表面上，所述凸起由第1金属材料构成；该凸起的顶面形成了由单体状态的融点比与所述第1金属材料合金的融点更低的第2金属材料构成的接合膜；在所述凸起的顶面和所述接合膜之间，形成相对于所述第1金属材料的扩散系数比所述第2金属材料更低的第3金属材料构成的防扩散膜，以便覆盖所述凸起的顶面的一部分并且露出其余部分；所述接合膜具有：形成于所述防扩散膜上的部分；和与所述凸起的顶面接合而形成的部分；
所述方法包括：
临时接合工序，通过以所述半导体芯片夹持所述凸起而配置于半导体基板上的状态，在所述第2金属材料单体状态的融点以上、低于所述第1金属材料和第2金属材料的合金的融点的第1温度下加热所述接合膜，而将所述半导体芯片临时接合于所述半导体基板上；
正式接合工序，在该临时接合工序之后，通过在所述第1金属材料和第2金属材料的合金的融点以上的第2温度下加热所述接合膜，而将所述半导体芯片正式接合于所述半导体基板上。
9.根据权利要求8所述的半导体装置的制造方法，其中，
所述正式接合工序，在将多个半导体芯片临时接合于所述半导体基板上之后进行。
CNB2005800017088A 2004-08-11 2005-06-16 电子装置和使用其的半导体装置及半导体装置的制造方法 Active CN100511613C (zh)

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CN100511613C (zh) 2009-07-08
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WO2006016449A1 (ja) 2006-02-16
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JP4718809B2 (ja) 2011-07-06
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