JPS54159173A - Construction of bump electrode - Google Patents

Construction of bump electrode

Info

Publication number
JPS54159173A
JPS54159173A JP6778478A JP6778478A JPS54159173A JP S54159173 A JPS54159173 A JP S54159173A JP 6778478 A JP6778478 A JP 6778478A JP 6778478 A JP6778478 A JP 6778478A JP S54159173 A JPS54159173 A JP S54159173A
Authority
JP
Japan
Prior art keywords
layer
bump electrode
barrier metal
hole
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6778478A
Other languages
Japanese (ja)
Inventor
Keiji Miyamoto
Toru Kawanobe
Tatsuo Itagaki
Kichiji Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6778478A priority Critical patent/JPS54159173A/en
Publication of JPS54159173A publication Critical patent/JPS54159173A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To substantially remove the step of the through-hole by melting and solidifying the low melting point metal layer located on the bump electrode via the barrier metal film.
CONSTITUTION: Hole is opened on the SiO2 film 16 on the insulation film 12, NiCr and Pd are sequentially laminated 18 on the wiring layer 14 to form the Au bump electrode 20. Succeedingly, the barrier metal 22 such as Ni, and metals 24 and 26 are plated. The metals 24 and 26 are of Au-Sn, Au-In, Sn-Pb, and Sn-Ag or the like. With this state, since the unevenness corresponding to the step of the open hole is caused, the low melting point alloy layer 25 is formed with melting and solidifying. In this case, the barrier metal 22 avoids the reaction between the layer 25 and the Au electrode 25. With this method, the surface of the layer 25 is made smooth.
COPYRIGHT: (C)1979,JPO&Japio
JP6778478A 1978-06-07 1978-06-07 Construction of bump electrode Pending JPS54159173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6778478A JPS54159173A (en) 1978-06-07 1978-06-07 Construction of bump electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6778478A JPS54159173A (en) 1978-06-07 1978-06-07 Construction of bump electrode

Publications (1)

Publication Number Publication Date
JPS54159173A true JPS54159173A (en) 1979-12-15

Family

ID=13354922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6778478A Pending JPS54159173A (en) 1978-06-07 1978-06-07 Construction of bump electrode

Country Status (1)

Country Link
JP (1) JPS54159173A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01166542A (en) * 1987-12-22 1989-06-30 Fujitsu Ltd Manufacture of semiconductor device
JPH01238044A (en) * 1988-03-17 1989-09-22 Nec Corp Semiconductor device
JPH02118931U (en) * 1989-03-13 1990-09-25
US6786385B1 (en) 1997-09-08 2004-09-07 Fujitsu Limited Semiconductor device with gold bumps, and method and apparatus of producing the same
WO2006016449A1 (en) * 2004-08-11 2006-02-16 Rohm Co., Ltd. Electronic device, semiconductor device using same, and method for manufacturing semiconductor device
US7969004B2 (en) 2007-10-05 2011-06-28 Sharp Kabushiki Kaisha Semiconductor device, method for mounting semiconductor device, and mounting structure of semiconductor device
JP2011138913A (en) * 2009-12-28 2011-07-14 Citizen Holdings Co Ltd Semiconductor light-emitting element and method for manufacturing the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01166542A (en) * 1987-12-22 1989-06-30 Fujitsu Ltd Manufacture of semiconductor device
JPH01238044A (en) * 1988-03-17 1989-09-22 Nec Corp Semiconductor device
JPH02118931U (en) * 1989-03-13 1990-09-25
US6786385B1 (en) 1997-09-08 2004-09-07 Fujitsu Limited Semiconductor device with gold bumps, and method and apparatus of producing the same
WO2006016449A1 (en) * 2004-08-11 2006-02-16 Rohm Co., Ltd. Electronic device, semiconductor device using same, and method for manufacturing semiconductor device
JP2006054311A (en) * 2004-08-11 2006-02-23 Rohm Co Ltd Electronic device, semiconductor device using the same, and method for manufacturing the semiconductor device
US7612456B2 (en) 2004-08-11 2009-11-03 Rohm Co., Ltd. Electronic device, semiconductor device using same, and method for manufacturing semiconductor device
US7969004B2 (en) 2007-10-05 2011-06-28 Sharp Kabushiki Kaisha Semiconductor device, method for mounting semiconductor device, and mounting structure of semiconductor device
JP2011138913A (en) * 2009-12-28 2011-07-14 Citizen Holdings Co Ltd Semiconductor light-emitting element and method for manufacturing the same

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