JP2006210756A - 電子装置及びその製造方法 - Google Patents
電子装置及びその製造方法 Download PDFInfo
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- JP2006210756A JP2006210756A JP2005022694A JP2005022694A JP2006210756A JP 2006210756 A JP2006210756 A JP 2006210756A JP 2005022694 A JP2005022694 A JP 2005022694A JP 2005022694 A JP2005022694 A JP 2005022694A JP 2006210756 A JP2006210756 A JP 2006210756A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
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Abstract
【解決手段】一方の主面の所定領域に電子回路素子が配設された第1の基板10と、第1の基板における一方の主面に対向して配設された第2の基板12と、第1の基板と第2の基板との間に、第1の基板における所定領域を囲んで配設された封止部26,40と、封止部の側面に配設された接着層42とを有している。
【選択図】 図1
Description
本発明の第1実施形態による電子装置及びその製造方法を図1乃至図13を用いて説明する。図1は、本実施形態による電子装置を示す断面図である。
図1に示すように、本実施形態による電子装置は、半導体基板10と封止用基板12とが対向して配置されている。
次に、本実施形態による電子装置の製造方法について説明する。
なお、ここでは、封止用構造物26と封止用構造物40とを金属間固相拡散接合するとともに、電極24と電極38とを金属間固相拡散接合した後の段階で半田バンプ51を形成する場合を例に説明したが、半導体基板10と封止用基板12とを対向させる前の段階で半田バンプ51を形成してもよい。
次に、本実施形態の変形例に従う電子装置の製造方法を図14乃至図17を用いて説明する。
なお、ここでは、封止用構造物26と封止用構造物40とを金属間固相拡散により結合するとともに、電極24と電極38とを金属間固相拡散により結合させた後の段階で半田バンプ51を形成する場合を例に説明したが、半導体基板10と封止用基板12とを対向させる前の段階で半田バンプ51を形成してもよい。
本発明の第2実施形態による電子装置の製造方法を図18乃至図20を用いて説明する。
なお、ここでは、封止用構造物26と封止用構造物40とを金属間固相拡散接合により結合するとともに、電極24と電極38とを金属間固相拡散接合により結合した後の段階で半田バンプ51を形成する場合を例に説明したが、半導体基板10と封止用基板12とを対向させる前の段階で半田バンプ51を形成してもよい。
本発明の第3実施形態による電子装置の製造方法について、図21乃至図23を用いて説明する。図21乃至図23は、本実施形態による電子装置の製造方法を示す工程断面図である。
なお、ここでは、封止用構造物26と封止用構造物40とを金属間固相拡散により結合するとともに、電極24と電極38とを金属間固相拡散により結合した後に、半田バンプ51を形成する場合を例に説明したが、半導体基板10と封止用基板12とを対向させる前の段階で半田バンプ51を形成してもよい。
本発明は上記実施形態に限らず種々の変形が可能である。
(付記1)
一方の主面の所定領域に電子回路素子が配設された第1の基板と、
前記第1の基板の前記一方の主面に対向して配設された第2の基板と、
前記第1の基板と前記第2の基板との間に、前記第1の基板における前記所定領域を囲んで配設された封止部と、
前記封止部の側面に配設された接着層と
を有することを特徴とする電子装置。
(付記2)
一方の主面の所定領域に電子回路素子が配設された第1の基板と、
前記第1の基板の前記一方の主面に対向して配設された第2の基板と、
前記第1の基板の前記一方の主面上に、前記所定領域を囲んで配設された第1の封止用構造物と、
前記第1の基板に対向する前記第2の基板における一方の主面に、前記第1の封止用構造物に対応して形成され、且つ、前記第1の封止用構造物に接合された第2の封止用構造物と、
前記第1の封止用構造物及び前記第2の封止用構造物の側面に配設された接着層と
を有することを特徴とする電子装置。
(付記3)
付記2記載の電子装置において、
前記第1の封止用構造物と前記第2の封止用構造物とが、固相拡散接合により結合されている
ことを特徴とする電子装置。
(付記4)
付記2又は3記載の電子装置において、
前記第1の基板上の前記所定領域内に配設され、前記電子回路素子に電気的に接続された第1の電極と、
前記第2の基板の前記一方の主面に、前記第1の電極に対応して配設され、且つ、前記第1の電極に固相拡散接合された第2の電極とを更に有する
ことを特徴とする電子装置。
(付記5)
付記4記載の電子装置において、
前記第2の基板には、前記第2の電極に電気的に接続された貫通電極が埋め込まれている
ことを特徴とする電子装置。
(付記6)
付記2乃至5のいずれかに記載の電子装置において、
前記第1の封止用構造物又は前記第2の封止用構造物は、金属よりなる
ことを特徴とする電子装置。
(付記7)
付記2乃至6のいずれかに記載の電子装置において、
前記第1の封止用構造物は、Sn、Sn合金、Au、又はAu合金よりなり、
前記第2の封止用構造物は、Sn、Sn合金、Au、又はAu合金よりなる
ことを特徴とする電子装置。
(付記8)
付記4又は5記載の電子装置において、
前記第1の電極は、Sn、Sn合金、Au、又はAu合金よりなり、
前記第2の電極は、Sn、Sn合金、Au、又はAu合金よりなる
ことを特徴とする電子装置
(付記9)
付記1乃至8のいずれかに記載の電子装置において、
前記接着層は、熱硬化性樹脂よりなる
ことを特徴とする電子装置。
(付記10)
第1の基板の一方の主面上の電子回路素子が形成された所定領域を囲んで、前記第1の基板の前記一方の主面上に第1の封止用構造物を形成する工程と、
前記第1の封止用構造物の上部をバイトにより切削する工程と、
第2の基板上に、前記第1の封止用構造物に対応するように第2の封止用構造物を形成する工程と、
前記第2の封止用構造物の上部をバイトにより切削する工程と、
前記第1の封止用構造物及び前記第2の封止用構造物のうちの一方の側面に半硬化の接着層を形成する工程と、
前記第1の封止用構造物と前記第2の封止用構造物とを互いに密着させ、前記第1の封止用構造物及び前記第2の封止用構造物のうちの前記一方を、前記第1の封止用構造物及び前記第2の封止用構造物のうちの他方に対して上側に配置した状態で、熱処理を行うことにより、前記接着層を溶解させ、前記接着層を前記第1の封止用構造物及び前記第2の封止用構造物のうちの前記他方の側面まで到達させる工程と、
前記接着層が硬化した後、熱処理を行うことにより、前記第1の封止用構造物と前記第2の封止用構造物とを固相拡散接合する工程と
を有することを特徴とする電子装置の製造方法。
(付記11)
第1の基板の一方の主面上の電子回路素子が形成された所定領域を囲んで、前記第1の基板の前記一方の主面上に第1の封止用構造物を形成する工程と、
前記第1の封止用構造物の上部をバイトにより切削する工程と、
第2の基板上に、前記第1の封止用構造物に対応するように第2の封止用構造物を形成する工程と、
前記第2の封止用構造物の側面に半硬化の接着層を形成する工程と、
前記第2の封止用構造物の上部をバイトにより切削する工程と、
前記第1の封止用構造物と前記第2の封止用構造物とを互いに密着させ、前記第2の封止用構造物を前記第1の封止用構造物の上側に配置した状態で、熱処理を行うことにより、前記接着層を溶解させ、前記接着層を前記第1の封止用構造物の側面まで到達させる工程と、
前記接着層が硬化した後、熱処理を行うことにより、前記第1の封止用構造物と前記第2の封止用構造物とを固相拡散接合する工程と
を有することを特徴とする電子装置の製造方法。
(付記12)
付記11記載の電子装置の製造方法において、
前記第1の封止用構造物を形成する工程では、前記電子回路素子に電気的に接続された第1の電極を前記第1の基板上の前記所定領域内に更に形成し、
前記第1の封止用構造物の上部を前記バイトにより切削する工程では、前記第1の電極の上部をも前記バイトにより切削し、
前記第2の封止用構造物を形成する工程では、前記第1の電極に対応するように第2の電極を前記第2の基板上に更に形成し、
前記第2の封止用構造物の上部を前記バイトにより切削する工程では、前記第2の電極の上部をも前記バイトにより切削する
ことを特徴とする電子装置の製造方法。
(付記13)
付記11又は12記載の電子装置の製造方法において、
前記第2の封止用構造物の上部を前記バイトにより切削する工程では、前記接着層の上部をも前記バイトにより切削する
ことを特徴とする電子装置の製造方法。
(付記14)
付記11乃至13のいずれかに記載の電子装置の製造方法において、
前記半硬化の接着層を形成する工程は、印刷法により、前記第2の封止用構造物の側面に前記接着層を形成する工程と;熱処理を行うことにより、前記接着層を半硬化させる工程とを有する
ことを特徴とする電子装置の製造方法。
(付記15)
付記11乃至13のいずれかに記載の電子装置の製造方法において、
前記半硬化の接着層を形成する工程は、前記第2の基板上に感光性の接着剤を塗布する工程と;熱処理を行うことにより、前記接着剤を半硬化させる工程と;前記接着剤をパターニングすることにより、前記第2の封止用構造物の側面に前記接着剤よりなる前記接着層を形成する工程とを有する
ことを特徴とする電子装置の製造方法。
(付記16)
第1の基板の一方の主面上の電子回路素子が形成された所定領域を囲んで、前記第1の基板の前記一方の主面上に第1の封止用構造物を形成する工程と、
前記第1の封止用構造物の側面に半硬化の接着層を形成する工程と、
前記第1の封止用構造物の上部をバイトにより切削する工程と、
第2の基板上に、前記第1の封止用構造物に対応するように第2の封止用構造物を形成する工程と、
前記第2の封止用構造物の上部をバイトにより切削する工程と、
前記第1の封止用構造物と前記第2の封止用構造物とを互いに密着させ、前記第1の封止用構造物を前記第2の封止用構造物の上側に配置した状態で、熱処理を行うことにより、前記接着層を溶解させ、前記接着層を前記第2の封止用構造物の側面まで到達させる工程と、
前記接着層が硬化した後、熱処理を行うことにより、前記第1の封止用構造物と前記第2の封止用構造物とを固相拡散接合する工程と
を有することを特徴とする電子装置の製造方法。
(付記17)
付記16記載の電子装置の製造方法において、
前記第1の封止用構造物を形成する工程では、前記電子回路素子に電気的に接続された第1の電極を前記第1の基板上の前記所定領域内に更に形成し、
前記第1の封止用構造物の上部を前記バイトにより切削する工程では、前記第1の電極の上部をも前記バイトにより切削し、
前記第2の封止用構造物を形成する工程では、前記第1の電極に対応するように第2の電極を前記第2の基板上に更に形成し、
前記第2の封止用構造物の上部を前記バイトにより切削する工程では、前記第2の電極の上部をも前記バイトにより切削する
ことを特徴とする電子装置の製造方法。
(付記18)
付記15乃至17のいずれかに記載の電子装置の製造方法において、
前記半硬化の接着層を形成する工程は、印刷法により、前記第1の封止用構造物の側面に前記接着層を形成する工程と;熱処理を行うことにより、前記接着層を半硬化させる工程とを有する
ことを特徴とする電子装置の製造方法。
(付記19)
付記15乃至17のいずれかに記載の電子装置の製造方法において、
前記半硬化の接着層を形成する工程は、前記第1の基板上に感光性の接着剤を塗布する工程と;熱処理を行うことにより、前記接着剤を半硬化させる工程と;前記接着剤をパターニングすることにより、前記第1の封止用構造物の側面に前記接着剤よりなる前記接着層を形成する工程とを有する
ことを特徴とする電子装置の製造方法。
(付記20)
第1の基板の一方の主面上の電子回路素子が形成された所定領域を囲んで、前記第1の基板の前記一方の主面上に第1の封止用構造物を形成する工程と、
前記第1の封止用構造物の側面に半硬化の第1の接着層を形成する工程と、
前記第1の封止用構造物の上部をバイトにより切削する工程と、
第2の基板上に、前記第1の封止用構造物に対応するように、第2の封止用構造物を形成する工程と、
前記第2の封止用構造物の側面に半硬化の第2の接着層を形成する工程と、
前記第2の封止用構造物の上部を、バイトにより切削する工程と、
前記第1の封止用構造物と前記第2の封止用構造物とを互いに密着させ、前記第1の電極と前記第2の電極とを互いに密着させた状態で、熱処理を行うことにより、前記第1の接着層と前記第2の接着層とを互いに接着させる工程と、
前記第1の接着層及び前記第2の接着層が硬化した後、熱処理を更に行うことにより、前記第1の封止用構造物と前記第2の封止用構造物とを固相拡散接合する工程と
を有することを特徴とする電子装置の製造方法。
(付記21)
付記20記載の電子装置の製造方法において、
前記第1の封止用構造物を形成する工程では、前記素子に電気的に接続された第1の電極を前記第1の基板上の前記所定領域内に更に形成し、
前記第1の封止用構造物の上部を前記バイトにより切削する工程では、前記第1の電極の上部をも前記バイトにより切削し、
前記第2の封止用構造物を形成する工程では、前記第1の電極に対応するように第2の電極を前記第2の基板上に更に形成し、
前記第2の封止用構造物の上部を前記バイトにより切削する工程では、前記第2の電極の上部をも前記バイトにより切削する
ことを特徴とする電子装置の製造方法。
(付記22)
付記20又は21記載の電子装置の製造方法において、
前記第1の封止用構造物の上部を前記バイトにより切削する工程では、前記第1の接着層の上部をも前記バイトにより切削し、
前記第2の封止用構造物の上部を前記バイトにより切削する工程では、前記第2の接着層の上部をも前記バイトにより切削する
ことを特徴とする電子装置の製造方法。
(付記23)
付記10乃至22のいずれかに記載の電子装置の製造方法において、
前記第1の封止用構造物は、Sn、Sn合金、Au、又はAu合金よりなり、
前記第2の封止用構造物は、Sn、Sn合金、Au、又はAu合金よりなる
ことを特徴とする電子装置の製造方法。
(付記24)
付記10乃至22のいずれかに記載の電子装置の製造方法において、
前記接着層は、熱硬化性樹脂よりなる
ことを特徴とする電子装置の製造方法。
12…封止用基板
14…配線
16…パッシベーション膜
18…開口部
20…積層膜
22…Ni膜
24…電極
26…封止用構造物
28…貫通孔
30…ビア
32…Cu膜
34…Ni膜
36…配線
38…電極
40…封止用構造物
41…封止部
42…接着層
44…Cu膜
46…Ni膜
48…Au膜
50…外部接続電極
51…半田バンプ
52…第1のフォトレジスト膜
54…開口部
56…第2のフォトレジスト膜
58…マスク
60…開口部
62…スキージ
64…超精密旋盤
66…チャックテーブル
68…バイト
70…フォトレジスト膜
72…開口部
73…接着層
74…マスク
76…開口部
78…接着層
80…マスク
82…スキージ
84…接着層
Claims (10)
- 一方の主面の所定領域に電子回路素子が配設された第1の基板と、
前記第1の基板の前記一方の主面に対向して配設された第2の基板と、
前記第1の基板と前記第2の基板との間に、前記第1の基板における前記所定領域を囲んで配設された封止部と、
前記封止部の側面に配設された接着層と
を有することを特徴とする電子装置。 - 一方の主面の所定領域に電子回路素子が配設された第1の基板と、
前記第1の基板の前記一方の主面に対向して配設された第2の基板と、
前記第1の基板の前記一方の主面上に、前記所定領域を囲んで配設された第1の封止用構造物と、
前記第1の基板に対向する前記第2の基板における一方の主面に、前記第1の封止用構造物に対応して形成され、且つ、前記第1の封止用構造物に接合された第2の封止用構造物と、
前記第1の封止用構造物及び前記第2の封止用構造物の側面に配設された接着層と
を有することを特徴とする電子装置。 - 請求項2記載の電子装置において、
前記第1の封止用構造物と前記第2の封止用構造物とが、固相拡散接合により結合されている
ことを特徴とする電子装置。 - 請求項2又は3記載の電子装置において、
前記第1の基板上の前記所定領域内に配設され、前記電子回路素子に電気的に接続された第1の電極と、
前記第2の基板の前記一方の主面に、前記第1の電極に対応して配設され、且つ、前記第1の電極に固相拡散接合された第2の電極とを更に有する
ことを特徴とする電子装置。 - 第1の基板の一方の主面上の電子回路素子が形成された所定領域を囲んで、前記第1の基板の前記一方の主面上に第1の封止用構造物を形成する工程と、
前記第1の封止用構造物の上部をバイトにより切削する工程と、
第2の基板上に、前記第1の封止用構造物に対応するように第2の封止用構造物を形成する工程と、
前記第2の封止用構造物の上部をバイトにより切削する工程と、
前記第1の封止用構造物及び前記第2の封止用構造物のうちの一方の側面に半硬化の接着層を形成する工程と、
前記第1の封止用構造物と前記第2の封止用構造物とを互いに密着させ、前記第1の封止用構造物及び前記第2の封止用構造物のうちの前記一方を、前記第1の封止用構造物及び前記第2の封止用構造物のうちの他方に対して上側に配置した状態で、熱処理を行うことにより、前記接着層を溶解させ、前記接着層を前記第1の封止用構造物及び前記第2の封止用構造物のうちの前記他方の側面まで到達させる工程と、
前記接着層が硬化した後、熱処理を行うことにより、前記第1の封止用構造物と前記第2の封止用構造物とを固相拡散接合する工程と
を有することを特徴とする電子装置の製造方法。 - 第1の基板の一方の主面上の電子回路素子が形成された所定領域を囲んで、前記第1の基板の前記一方の主面上に第1の封止用構造物を形成する工程と、
前記第1の封止用構造物の上部をバイトにより切削する工程と、
第2の基板上に、前記第1の封止用構造物に対応するように第2の封止用構造物を形成する工程と、
前記第2の封止用構造物の側面に半硬化の接着層を形成する工程と、
前記第2の封止用構造物の上部をバイトにより切削する工程と、
前記第1の封止用構造物と前記第2の封止用構造物とを互いに密着させ、前記第2の封止用構造物を前記第1の封止用構造物の上側に配置した状態で、熱処理を行うことにより、前記接着層を溶解させ、前記接着層を前記第1の封止用構造物の側面まで到達させる工程と、
前記接着層が硬化した後、熱処理を行うことにより、前記第1の封止用構造物と前記第2の封止用構造物とを固相拡散接合する工程と
を有することを特徴とする電子装置の製造方法。 - 請求項6記載の電子装置の製造方法において、
前記第1の封止用構造物を形成する工程では、前記電子回路素子に電気的に接続された第1の電極を前記第1の基板上の前記所定領域内に更に形成し、
前記第1の封止用構造物の上部を前記バイトにより切削する工程では、前記第1の電極の上部をも前記バイトにより切削し、
前記第2の封止用構造物を形成する工程では、前記第1の電極に対応するように第2の電極を前記第2の基板上に更に形成し、
前記第2の封止用構造物の上部を前記バイトにより切削する工程では、前記第2の電極の上部をも前記バイトにより切削する
ことを特徴とする電子装置の製造方法。 - 第1の基板の一方の主面上の電子回路素子が形成された所定領域を囲んで、前記第1の基板の前記一方の主面上に第1の封止用構造物を形成する工程と、
前記第1の封止用構造物の側面に半硬化の接着層を形成する工程と、
前記第1の封止用構造物の上部をバイトにより切削する工程と、
第2の基板上に、前記第1の封止用構造物に対応するように第2の封止用構造物を形成する工程と、
前記第2の封止用構造物の上部をバイトにより切削する工程と、
前記第1の封止用構造物と前記第2の封止用構造物とを互いに密着させ、前記第1の封止用構造物を前記第2の封止用構造物の上側に配置した状態で、熱処理を行うことにより、前記接着層を溶解させ、前記接着層を前記第2の封止用構造物の側面まで到達させる工程と、
前記接着層が硬化した後、熱処理を行うことにより、前記第1の封止用構造物と前記第2の封止用構造物とを固相拡散接合する工程と
を有することを特徴とする電子装置の製造方法。 - 請求項8記載の電子装置の製造方法において、
前記第1の封止用構造物を形成する工程では、前記電子回路素子に電気的に接続された第1の電極を前記第1の基板上の前記所定領域内に更に形成し、
前記第1の封止用構造物の上部を前記バイトにより切削する工程では、前記第1の電極の上部をも前記バイトにより切削し、
前記第2の封止用構造物を形成する工程では、前記第1の電極に対応するように第2の電極を前記第2の基板上に更に形成し、
前記第2の封止用構造物の上部を前記バイトにより切削する工程では、前記第2の電極の上部をも前記バイトにより切削する
ことを特徴とする電子装置の製造方法。 - 第1の基板の一方の主面上の電子回路素子が形成された所定領域を囲んで、前記第1の基板の前記一方の主面上に第1の封止用構造物を形成する工程と、
前記第1の封止用構造物の側面に半硬化の第1の接着層を形成する工程と、
前記第1の封止用構造物の上部をバイトにより切削する工程と、
第2の基板上に、前記第1の封止用構造物に対応するように、第2の封止用構造物を形成する工程と、
前記第2の封止用構造物の側面に半硬化の第2の接着層を形成する工程と、
前記第2の封止用構造物の上部を、バイトにより切削する工程と、
前記第1の封止用構造物と前記第2の封止用構造物とを互いに密着させ、前記第1の電極と前記第2の電極とを互いに密着させた状態で、熱処理を行うことにより、前記第1の接着層と前記第2の接着層とを互いに接着させる工程と、
前記第1の接着層及び前記第2の接着層が硬化した後、熱処理を更に行うことにより、前記第1の封止用構造物と前記第2の封止用構造物とを固相拡散接合する工程と
を有することを特徴とする電子装置の製造方法。
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