CN1842909B - 具有纳米簇的半导体器件 - Google Patents

具有纳米簇的半导体器件 Download PDF

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Publication number
CN1842909B
CN1842909B CN2004800247795A CN200480024779A CN1842909B CN 1842909 B CN1842909 B CN 1842909B CN 2004800247795 A CN2004800247795 A CN 2004800247795A CN 200480024779 A CN200480024779 A CN 200480024779A CN 1842909 B CN1842909 B CN 1842909B
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CN
China
Prior art keywords
barrier layer
district
oxidation barrier
nano
cluster
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2004800247795A
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English (en)
Chinese (zh)
Other versions
CN1842909A (zh
Inventor
罗伯特·F·斯特梅尔
拉马钱德兰·穆拉利德哈
韦恩·M·保尔森
拉杰什·A·拉奥
布鲁斯·E·怀特
爱德华·J·普里兹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1842909A publication Critical patent/CN1842909A/zh
Application granted granted Critical
Publication of CN1842909B publication Critical patent/CN1842909B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN2004800247795A 2003-09-16 2004-07-15 具有纳米簇的半导体器件 Expired - Fee Related CN1842909B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/663,621 2003-09-16
US10/663,621 US6958265B2 (en) 2003-09-16 2003-09-16 Semiconductor device with nanoclusters
PCT/US2004/022508 WO2005036640A1 (en) 2003-09-16 2004-07-15 Semiconductor device with nanoclusters

Publications (2)

Publication Number Publication Date
CN1842909A CN1842909A (zh) 2006-10-04
CN1842909B true CN1842909B (zh) 2010-10-27

Family

ID=34274432

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2004800247795A Expired - Fee Related CN1842909B (zh) 2003-09-16 2004-07-15 具有纳米簇的半导体器件

Country Status (6)

Country Link
US (1) US6958265B2 (OSRAM)
JP (1) JP4902353B2 (OSRAM)
KR (1) KR101095292B1 (OSRAM)
CN (1) CN1842909B (OSRAM)
TW (1) TWI286802B (OSRAM)
WO (1) WO2005036640A1 (OSRAM)

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US6927454B2 (en) * 2003-10-07 2005-08-09 International Business Machines Corporation Split poly-SiGe/poly-Si alloy gate stack
US6964902B2 (en) * 2004-02-26 2005-11-15 Freescale Semiconductor, Inc. Method for removing nanoclusters from selected regions
US7091089B2 (en) * 2004-06-25 2006-08-15 Freescale Semiconductor, Inc. Method of forming a nanocluster charge storage device
US7091130B1 (en) * 2004-06-25 2006-08-15 Freescale Semiconductor, Inc. Method of forming a nanocluster charge storage device
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US20060054963A1 (en) * 2004-09-10 2006-03-16 Qian Rong A Non-volatile and non-uniform trapped-charge memory cell structure and method of fabrication
US7361543B2 (en) * 2004-11-12 2008-04-22 Freescale Semiconductor, Inc. Method of forming a nanocluster charge storage device
US7186616B2 (en) * 2005-03-16 2007-03-06 Freescale Semiconductor, Inc. Method of removing nanoclusters in a semiconductor device
US7927948B2 (en) * 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7575978B2 (en) 2005-08-04 2009-08-18 Micron Technology, Inc. Method for making conductive nanoparticle charge storage element
US7241695B2 (en) * 2005-10-06 2007-07-10 Freescale Semiconductor, Inc. Semiconductor device having nano-pillars and method therefor
TWI270168B (en) * 2005-12-05 2007-01-01 Promos Technologies Inc Method for manufacturing non-volatile memory
TW200737486A (en) * 2006-03-24 2007-10-01 Lightuning Tech Inc Semiconductor integrated circuit chip with nano-structure-surface resin passivation and method of fabricating the same
US7583542B2 (en) * 2006-03-28 2009-09-01 Freescale Semiconductor Inc. Memory with charge storage locations
US7445984B2 (en) 2006-07-25 2008-11-04 Freescale Semiconductor, Inc. Method for removing nanoclusters from selected regions
US7432158B1 (en) 2006-07-25 2008-10-07 Freescale Semiconductor, Inc. Method for retaining nanocluster size and electrical characteristics during processing
US7687349B2 (en) * 2006-10-30 2010-03-30 Atmel Corporation Growth of silicon nanodots having a metallic coating using gaseous precursors
KR100791007B1 (ko) * 2006-12-07 2008-01-04 삼성전자주식회사 금속 실리사이드 나노 결정을 구비하는 비휘발성 메모리소자, 상기 금속 실리사이드 나노 결정 형성 방법 및 상기비휘발성 메모리 소자의 제조방법
US7816211B2 (en) * 2007-01-26 2010-10-19 Freescale Semiconductor, Inc. Method of making a semiconductor device having high voltage transistors, non-volatile memory transistors, and logic transistors
US7579238B2 (en) * 2007-01-29 2009-08-25 Freescale Semiconductor, Inc. Method of forming a multi-bit nonvolatile memory device
KR100874944B1 (ko) * 2007-02-02 2008-12-19 삼성전자주식회사 반도체 메모리 소자 제조 방법 및 이에 따른 반도체 메모리소자
ITMI20071140A1 (it) * 2007-06-04 2008-12-05 St Microelectronics Srl Processo per la realizzazione di un dispositivo di memoria integrato su un substrato semiconduttore e comprendente celle di memoria a nanocristalli e transistori cmos.
FR2919427B1 (fr) * 2007-07-26 2010-12-03 Soitec Silicon On Insulator Structure a reservoir de charges.
JP5044443B2 (ja) * 2008-02-21 2012-10-10 株式会社東芝 半導体装置およびその製造方法
US9008467B2 (en) * 2008-03-20 2015-04-14 Hewlett-Packard Development Company, L.P. Nanoparticle-based quantum confined stark effect modulator
US7871886B2 (en) * 2008-12-19 2011-01-18 Freescale Semiconductor, Inc. Nanocrystal memory with differential energy bands and method of formation
US7799634B2 (en) * 2008-12-19 2010-09-21 Freescale Semiconductor, Inc. Method of forming nanocrystals
KR101140581B1 (ko) * 2009-12-16 2012-05-02 순천대학교 산학협력단 실리콘 나노점 클러스터 및 그 제조방법
US8173507B2 (en) * 2010-06-22 2012-05-08 Micron Technology, Inc. Methods of forming integrated circuitry comprising charge storage transistors
US8679912B2 (en) * 2012-01-31 2014-03-25 Freescale Semiconductor, Inc. Semiconductor device having different non-volatile memories having nanocrystals of differing densities and method therefor
CN103413788B (zh) * 2013-08-29 2016-03-09 厦门大学 非平面金属纳米晶多位存储器件的制备方法
US9218978B1 (en) * 2015-03-09 2015-12-22 Cypress Semiconductor Corporation Method of ONO stack formation
FR3046155B1 (fr) * 2015-12-28 2020-01-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation de nanocristaux a dimensions et densite controlees
US10355139B2 (en) 2016-06-28 2019-07-16 Sandisk Technologies Llc Three-dimensional memory device with amorphous barrier layer and method of making thereof
US10361213B2 (en) 2016-06-28 2019-07-23 Sandisk Technologies Llc Three dimensional memory device containing multilayer wordline barrier films and method of making thereof
US10115735B2 (en) 2017-02-24 2018-10-30 Sandisk Technologies Llc Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereof
US10229931B1 (en) 2017-12-05 2019-03-12 Sandisk Technologies Llc Three-dimensional memory device containing fluorine-free tungsten—word lines and methods of manufacturing the same
US10615123B2 (en) 2018-03-14 2020-04-07 Sandisk Technologies Llc Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same
CN113130742A (zh) * 2021-03-19 2021-07-16 厦门半导体工业技术研发有限公司 一种半导体集成电路器件及其制造方法

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JPH11186421A (ja) * 1997-12-25 1999-07-09 Sony Corp 不揮発性半導体記憶装置及びその書き込み消去方法
US6320784B1 (en) * 2000-03-14 2001-11-20 Motorola, Inc. Memory cell and method for programming thereof
JP2001308198A (ja) * 2000-04-27 2001-11-02 Ricoh Co Ltd 半導体装置及びその製造方法
US6297095B1 (en) * 2000-06-16 2001-10-02 Motorola, Inc. Memory device that includes passivated nanoclusters and method for manufacture
US6444545B1 (en) * 2000-12-19 2002-09-03 Motorola, Inc. Device structure for storing charge and method therefore
JP3983105B2 (ja) * 2002-05-29 2007-09-26 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置の製造方法

Also Published As

Publication number Publication date
KR101095292B1 (ko) 2011-12-16
US20050059213A1 (en) 2005-03-17
KR20060080203A (ko) 2006-07-07
JP2007506265A (ja) 2007-03-15
TW200520104A (en) 2005-06-16
US6958265B2 (en) 2005-10-25
WO2005036640A1 (en) 2005-04-21
JP4902353B2 (ja) 2012-03-21
TWI286802B (en) 2007-09-11
CN1842909A (zh) 2006-10-04

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Granted publication date: 20101027

Termination date: 20160715