CN1819255B - 基于微型发光二极管的高压交直流指示灯 - Google Patents
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Abstract
本发明公开了基于微型发光二极管阵列的交直流指示灯。该指示灯可由标准高电压交流或直流电源供电。指示灯的功率消耗低。微型发光二极管串联连接在衬底上，总的器件面积和功率消耗与标准直流低电压发光二极管相一致。多个指示灯可以并联连接形成指示灯串。
Description
技术领域
本发明涉及发光二极管(LED)，尤其涉及包含有串联连接的微型尺寸的发光二极管(Micro-LEDs)的指示灯，指示灯中的这些微型发光二极管都集成在一个芯片上。这种结构的指示灯可以直接由交流电压(即110/120V或220/240V输电网)或直流高电压供电，不需要电源变压器。
背景技术
小型的发光二极管指示灯广泛应用于电子产品、电动玩具、布景装饰和显示屏中。这些以氮化铝镓铟(AlInGaN)或磷化铝镓铟(AlInGaP)为基础的标准或普通的发光二极管典型的芯片面积(或芯片尺寸)约为0.3mm×0.3mm。这些发光二极管指示灯通常的工作状态为直流电流20毫安。根据发光二极管使用的半导体材料的不同，相应的直流电压为2V至4V。T1或T1-3/4型封装的标准指示灯的最大输入功率大约可达0.1W。
虽然标准的发光二极管指示灯固有的低电压和直流电流特性，使得可以非常便利地将其加入到电子设计中，但它也会在其它应用中成为不方便的因素。例如，为了在圣诞树装饰中使用这些标准指示灯，发光二极管灯串必须采用各个发光二极管并联连接的方式，并且必须使用大容量的降压变压器和整流器转换模式。发光二极管灯串也可采用各个发光二极管指示灯的串联连接，此时发光二极管指示灯的数量多少则取决于交流电源的电压。在串联连接的灯串中，发光二极管指示灯的数量不能随意更改，而且如果其中一个灯出现故障引起断路，整个灯串都将不能工作。
标准尺寸的发光二极管阵列可以集成在同一个衬底上，使用120V交流电源供电，整个器件的尺寸约为1mm×1mm到2mm×2mm或更大。该器件工作电流约为20mA或更高，以获得高亮度，主要用于家庭照明等应用场合。这种交流发光二极管需要特殊的封装和散热模式，因为相对较大的芯片尺寸和高温生产工艺，使其不适应于低功耗指示灯的封装要求。这些大功率交流发光二极管不适于代替标准的小型发光二极管指示灯。
在美国专利6,410,940号中，公开了一种微型尺寸的发光二极管(micro-LED)阵列。它以点阵格式排列，主要使用在微型显示屏等应用场合；其阵列也可排列为平行格式，与标准大面积发光二极管相比较，可以强化光输出。基本上，这些微型发光二极管阵列仍然工作在直流低电压(几个伏特)条件下，典型的电流水平为几十个毫安。
单个的微型发光二极管的典型尺寸比标准发光二极管要小几百倍，而且其面积甚至小于标准发光二极管的接触面积。因此，器件的几何布置设计和制造工艺都极大地不同。适用于高压交直流应用场合的微型发光二极管阵列也与标准尺寸的发光二极管阵列不同。对微型尺寸的发光二极管阵列的需求仍然存在，这种发光二极管阵列通过标准高电压交直流电源供电，并可用于代替普通的直流低电压指示灯。
发明内容
本发明提供一种微型发光二极管阵列，串联连接，含有两个输出引线用于连接高压交直流电源。该阵列具有与普通发光二极管指示灯等同的总体芯片尺寸和功率消耗，因此这种微型发光二极管阵列可以直接在用于标准发光二极管指示灯的外壳中封装。其效果是具有与标准发光二极管指示灯相同或类似的外部物理特性的高电压交直流指示灯。根据详细设计的不同，高电压交直流指示灯的电源电压可为12V、24V、36V、48V或其它直流电压，也可以是类似于110/120V或220/240V的交流电压。
普通的发光二极管指示灯可以用串联连接的微型发光二极管阵列代替。该阵列的其中一个微型发光二极管的p触点(阳极)与相邻的微型发光二极管的n触点(阴极)相连，其效果是整个阵列的外加电压等于作用在每个微型发光二极管上的电压之和。例如，如果每个微型发光二极管的工作电压为3V，对于120V的电源电压，该阵列中应串联连接40个微型发光二极管。因为只有当阳极和阴极的压降为正电压时，二极管中才有电流和光发射。对于交流电源供电，以上的阵列只有在交流电源的正半周期才会有光发射。可以使用第二个阵列，与第一个阵列并联连接，但按照电流的反方向排列，这样在每个半周期都会有一个阵列发光。在这种模式下，考虑到绝缘和相互连接所需要的额外空间，可以使用包含有80个微型发光二极管、尺寸小于25μm×25μm的阵列代替尺寸为0.3mm×0.3mm的普通发光二极管。
微型发光二极管阵列可以集成在同一个衬底上。每个微型发光二极管之间的绝缘可以通过刻蚀沟槽到绝缘衬底上、或者刻蚀到夹在微型发光二极管结构与导电或绝缘的衬底之间的绝缘层上，以去除导电材料而实现。这个绝缘层可以外延性植在衬底上，应选择其合适的成份与厚度，使随后的微型发光二极管材料结构足够薄(例如，小于2.5μm)，以保证简便地完成绝缘刻蚀沟槽和相邻微型发光二极管之间的金属导体连接。我们也提出了另外一种基于“旋压”聚合物或沉积绝缘体的表面平面化的方法来实现每个微型发光二极管之间的绝缘。
与标准直流发光二极管指示灯尺寸相当的集成微型发光二极管阵列，可以采用与标准指示灯相似的外壳和相似的功率消耗。因为输入电压要高得多，本发明中的指示灯的工作电流比标准指示灯要小得多。如果设计为120V交流电压，该指示灯可以直接在标准家庭用功率下工作。多个指示灯可以并联连接组成非常可靠性的发光二极管灯串。
附图说明
图1为实施例1所述的微型发光二极管交直流指示灯的放大剖面视图。
图2为实施例2微型发光二极管交直流指示灯的放大剖面视图。
图3为实施例3微型发光二极管的交直流指示灯的放大剖面视图。该指示灯建在导电衬底上，具有绝缘外延层和薄型发光二极管结构。
图4为微型发光二极管的交直流指示灯的封装放大剖面视图。
图5为并联型的微型发光二极管的交流灯串的图例。
具体实施方式
实施例1
如图1所示，数字10所指示的即为本发明中以氮化铝镓铟(AlInGaN)半导体材料为基础的微型发光二极管。微型发光二极管10可生长在绝缘蓝宝石衬底12上，并包含有过渡层14、n型半导体层16、活性区域层18和p型半导体层20。在120V交流电压的应用场合，每个微型发光二极管10的尺寸大约可为25μm×25μm或相似的尺寸，可以通过以下方法制备出来：首先在衬底12上生长出整片的过渡层14、n型半导体层16、活性区域层18和p型半导体层20，然后通过等离子体刻蚀方式，对过渡层14、n型半导体层16、活性区域层18和p型半导体层20进行刻蚀，直到绝缘衬底12上，从而形成多个相互独立的微型发光二极管10。p触点(阳极)22和n触点(阴极)24分别在p型半导体层20和n型半导体层16上成形。应用于标准大面积发光二极管中的电流散布层也可以应用在本发明的微型发光二极管中，但是由于本发明的微型发光二极管的尺寸极小，在本发明中的微型发光二极管中，应用于标准大面积发光二极管中的电流散布层也可以不需采用。
通过沉积不同的金属，然后在不同的温度和外部环境下进行退火热处理，形成阳极和阴极。例如，阳极可以由镍(Ni)和金(Au)金属层片，在含氧环境下退火成形；而阴极可以由钛(Ti)和铝(Al)金属层片，在含氮环境下退火成形。也可使用在p型半导体层20上大量掺杂的n+半导体层和p+半导体层组成的隧道PN结，以减少制造工序的步骤。在这种情况下，阳极和阴极的成形工序步骤相同，使用相同的钛(Ti)和铝(Al)金属层片，分别在n+和n半导体上形成。
相邻的微型发光二极管10之间的相互连接结构26可以有不同的方式。首选的连接结构26是通过以下方式实现：先把上述的刻蚀微过程中，在各型发光二极管之间形成的空隙用聚合物28填平，然后铺上金属。聚合物28对可见光是透明的，但可以被深紫外线(DUV)光子作用而被显影剂腐蚀。聚合物28可以通过“旋涂”的方法涂覆在微型发光二极管之间的空隙。然后采用深紫外线光刻蚀法，将聚合物28部分去除，而与p型触点22和n型触点24成一平面。再用热处理方法形成坚硬的聚酰亚胺膜(polyimide)。表面平整化后，连接结构26的金属沉积就很容易实施了。聚合物28还具有钝化微型发光二极管的表面和刻蚀侧壁的功能，以减少非辐射重组率，并提高器件的可靠性。如果选择高折射率的聚合物28，可以增强器件10的发光度。绝缘电介质材料，比如各种氧化物和氮化物材料，可以用作聚合物的替代材料。例如，二氧化硅或氮化硅厚膜可以沉积到微型发光二极管之间的深沟槽中，这些沟槽就会被填平，以形成表面。
实施例2
如图2所示，微型发光二极管30的制作过程没有上文所述的表面平整化步骤。各个微型发光二极管之间的隔离是通过使用准各向同性等离子体刻蚀的方法，刻蚀一个深至绝缘衬底12的沟槽31上来实现的。这样，在侧壁32就会有一个有一定倾斜角度的倾斜面，该倾斜角一般为40°到80°。沿着倾斜侧壁，沉积出一个绝缘电介质材料薄层34，然后在绝缘电介质材料薄层34上再覆盖连接金属线36。绝缘材料34可以是二氧化硅、氮化硅或其它绝缘体，它将金属线36与半导体侧壁32隔离，并钝化侧壁上的悬空键(dangling bonds)。倾斜侧壁32减少了微型发光二极管30的有效面积。但是，由于有了倾斜侧壁，绝缘材料34和连接金属线36可以在平面表面和侧壁上沉积出均匀的厚度；而且倾斜侧壁32加强了微型发光二极管30的发光度。因为通常半导体具有很大的折射率，产生的大部分光都被封闭在半导体内，形成定向波，无法逸出。有了倾斜侧壁的外形，定向光波就会有更多的机会从侧壁32没有被金属线36覆盖的区域逸出。由于在侧壁上只有很小的部分覆盖着连接金属线36，其结果是微型发光二极管30就会有更高的光效率。
实施例3
如图3所示，标记40所指的是本发明中以氮化铝镓铟(AlInGaN)半导体材料为基础的微型发光二极管。微型发光二极管40可以生长在不同的衬底42上，比如碳化硅(SiC)、硅(Si)、氮化镓(GaN)、氮化铝(AlN)、砷化镓(GaAs)、磷化铟(InP)和蓝宝石(Al2O3)等。没有典型的低温缓冲层，半导体的生成直接开始于高温生成的并具有高电阻率的氮化铝(AlN)。其它半导体也可以被采用，比如氮化铝镓(AlGaN)和氮化铝镓铟(AlInGaN)。这个绝缘层通过改变氮化铝镓(AlGaN)或氮化铝镓铟(AlInGaN)的合金成份，逐渐转变成n型氮化镓(GaN)半导体层44。接着生成活性层46，然后是p型半导体层48。此外，还包括隧道PN结，该隧道PN结由在p型半导体层48上由含有大量掺杂的n+半导体层和p+半导体层组成，这样阳极和阴极就可以在同一步骤中成形。
在不牺牲器件的最终性能的情况下，微型发光二极管的结构层44、46和48(不包括绝缘层)都很薄，比如说小于2.5μm，而不是通常大于5μm的厚度。这种薄型结构以及绝缘层42联合使用的好处是导电或半导电的衬底50，例如碳化硅(SiC)、硅(Si)、氮化镓(GaN)、砷化镓(GaAs)和磷化铟(InP)，也可以用在高电压交直流指示灯40中。而且，隔离沟槽52只需用准各向同性的刻蚀方法来刻蚀到沉积绝缘层42上，因此沟槽深度很浅，并且带有斜坡，而且涂覆在侧壁上的连接金属线54和电介质隔离层56很容易成形，不需要复杂的工艺步骤。隔离层56可以是二氧化硅、氮化硅、其它氧化物、氮化物或聚酰亚胺等。
如图4所示，器件封装60可包括标准的3mm、5mm、10mm，或其它直径的透镜尺寸，分别为我们通常所说的T1、T1-3/4和T3-1/4封装。这些都是用于标准的发光二极管指示灯的封装。器件封装60包括环氧树脂透镜或穹顶62、微型发光二极管阵列64、反射镜杯66，引线接头68和70，以及两个金属引线72和74。封装60的散热是通过这两个薄金属引线72和74，因此具有较高的热阻和有限的散热能力。这种封装的最大输入功率约为0.1W，或者对于120V交流指示灯，其最大电流约小于1mA。考虑到标准的0.3mm×0.3mm发光二极管指示灯工作电流为20mA，电流密度为22A/cm2，每个面积为25μm×25μm的微型发光二极管的工作电流密度应为44A/cm2，或工作电流0.3mA。即使是考虑有两个微型发光二极管阵列64并联连接，导电方向相反，120V交流指示灯总的输入功率还是小于最大限值，可保证其可靠性，不会出现过热现象。
指示灯60发出的光波的波长依赖于在器件活性区域的半导体的能带隙能量。例如，如果氮化镓铟(InGaN)用于活性区域，通过改变氮化镓铟(InGaN)合金内铟(In)的成分来改变带隙能量，所发出的光波将涵盖紫外线(UV)、蓝色光和绿色光的波长范围。要生成白色光，可以使用磷光体转换颜色。例如，铝酸钇黄磷光体(Yttrium Aluminate yellow phosphor)可以吸收蓝色光，辐射黄色光。引线接合后，磷光体膏剂可填充在杯66内，然后是环氧树脂透镜或穹顶62封装。如果微型发光二极管阵列64发出蓝色光，与黄磷光体相结合，微型发光二极管阵列发出的蓝色光和磷光体发出的黄色光合并将产生出白色光。
表面安装的封装也可用于封装微型发光二极管阵列。而且，使用更大的封装容器，由不同半导体制成的几个红色、绿色和蓝色微型发光二极管阵列可以封装在同一个外壳中。红色、绿色和蓝色相混合，就成为一个高电压交直流白色光发射体。
交流指示灯60可以简单地直接连接110V/120V电源，用于指示和发信号。例如，几乎所有电力带动的机器或仪器，在电源开关旁边(或内部)都装有普通发光二极管，用以指示电源是否接通。这种标准指示发光二极管必须由直流低电压驱动。如果使用交流指示灯60代替普通发光二极管，就可以直接用110V/120V电源驱动，不需要任何附加电路。另外一个关于圣诞树装饰的例子，如图5所示，标记80所指的是一个并联的交流发光二极管灯串。因为每个灯60的工作电流约为1mA，对连接在灯串80中的指示灯数量几乎没有限制，而且灯串可以直接接入家庭用交流电源，不需要任何变压器或整流器。为安全起见，熔断器82可以与灯串80串联，在部分指示灯损坏而形成短路时，用作过电流保护。在这种情况下，可以去除短路的灯，并更换新的熔断器82就可以了。如果灯故障或接触不良引起断路，并联灯串80仍会正常工作，不需要更换。为避免电源电网中的电力冲击引起的损坏，可在电源端子间连接变阻器(图中未标示)。如果出现电力冲击，变阻器就会触发，从旁路通过冲击电流，以保护指示灯60。
虽然氮化铝镓铟(AlInGaN)半导体发射体是作为本发明中说明的例子，应该理解基于其它半导体材料如砷化镓(GaAs)和磷化铟(InP)的交直流光发射器件同样也是可以构建的。取决于半导体材料的带隙能量，微型发光二极管可以发出红色、蓝色、绿色、黄色或白色光。白色光可以通过混合红色、蓝色和绿色光获得，或通过磷光体转换波长获得。
应该理解虽然阐述和说明了本发明的一种形式，我们只对已包括在下面的权利要求中的内容采取限制。
Claims (13)
1.一种高压交直流指示灯，其特征在于其包括：
串联连接的微型发光二极管阵列，具有一定的电流方向和正负极端子，所述
每个微型发光二极管在p型半导体和n型半导体之间具有一个活性的区域；
所述串联连接的微型发光二极管阵列生长在衬底上；
所述端子用于与电源连接，给上述串联连接的微型发光二极管阵列供电；
所述衬底和n型半导体层之间设置有一绝缘层；
所述相邻的微型发光二极管通过刻蚀有一定倾斜角度的隔离沟槽相互隔离，
所述隔离沟槽用准各向同性的刻蚀方法来刻蚀到沉积绝缘层上；
所述隔离沟槽上、沿着倾斜侧壁沉积出一个绝缘电介质材料薄层；以及
所述绝缘电介质材料薄层上覆盖有连接金属线。
2.根据权利要求1所述的高压交直流指示灯，其特征在于：所述发光二极管的p型半导体层上形成有由大量掺杂的n+半导体层和p+半导体层组成的隧道PN结。
3.根据权利要求1所述的高压交直流指示灯，其特征在于：上述沟槽中由聚合物、氧化物、氮化物或其它绝缘材料填平，形成一平面。
4.根据权利要求3所述的高压交直流指示灯，其特征在于：所述微型发光二极管包括侧壁，所述的侧壁用上述绝缘电介质材料薄层覆盖。
5.根据权利要求1所述的高压交直流指示灯，其特征在于：所述的侧壁为一斜面，倾斜角度为40°到80°，以加强发光度以及绝缘材料和连接金属线的保形沉积。
6.根据权利要求5所述的高压交直流指示灯，其特征在于：所述的绝缘电介质材料薄层是二氧化硅、氮化硅、或聚酰亚胺。
7.根据权利要求1所述的高压交直流指示灯，其特征在于：所述衬底由半导体材料制成。
8.根据权利要求7所述的高压交直流指示灯，其特征在于：所述制成衬底的半导体材料为蓝宝石、氮化铝、碳化硅、硅、氮化镓、砷化镓或磷化铟。
9.根据权利要求1所述的高压交直流指示灯，其特征在于：所述的绝缘层材料为氮化铝、氮化铝镓、或氮化铝镓铟。
10.根据权利要求1所述的高压交直流指示灯，其特征在于：所述的电源为12V或24V或36V或48V的直流电源，或者为110V或120V或220V或240V的交流电源。
11.根据权利要求1所述的高压交直流指示灯，其特征在于：所述的微型发光二极管阵列的芯片尺寸小于1mm×1mm。
12.根据权利要求1所述的高压交直流指示灯，其特征在于：还包括用于封装所述阵列的外壳。
13.根据权利要求12所述的高压交直流指示灯，其特征在于：所述的封装为表面安装式封装。
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Also Published As
| Publication number | Publication date |
|---|---|
| US7535028B2 (en) | 2009-05-19 |
| US20060169993A1 (en) | 2006-08-03 |
| CN1819255A (zh) | 2006-08-16 |
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