CN1816882A - 静态存储器单元结构和电路 - Google Patents

静态存储器单元结构和电路 Download PDF

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Publication number
CN1816882A
CN1816882A CNA2004800189094A CN200480018909A CN1816882A CN 1816882 A CN1816882 A CN 1816882A CN A2004800189094 A CNA2004800189094 A CN A2004800189094A CN 200480018909 A CN200480018909 A CN 200480018909A CN 1816882 A CN1816882 A CN 1816882A
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China
Prior art keywords
transistor
read
cell
word
write
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Pending
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CNA2004800189094A
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English (en)
Chinese (zh)
Inventor
松炯－都克
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ZMOS Technology Inc
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ZMOS Technology Inc
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Publication of CN1816882A publication Critical patent/CN1816882A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
CNA2004800189094A 2003-07-01 2004-06-30 静态存储器单元结构和电路 Pending CN1816882A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48456503P 2003-07-01 2003-07-01
US60/484,565 2003-07-01

Publications (1)

Publication Number Publication Date
CN1816882A true CN1816882A (zh) 2006-08-09

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CNA2004800189094A Pending CN1816882A (zh) 2003-07-01 2004-06-30 静态存储器单元结构和电路

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US (2) US7102915B2 (https=)
EP (1) EP1642299A4 (https=)
JP (1) JP2007529081A (https=)
KR (1) KR20060040614A (https=)
CN (1) CN1816882A (https=)
CA (1) CA2529667A1 (https=)
TW (1) TWI278862B (https=)
WO (1) WO2005006340A2 (https=)

Cited By (7)

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CN103106917A (zh) * 2011-11-10 2013-05-15 台湾积体电路制造股份有限公司 半导体制造方法
CN104995686A (zh) * 2013-03-15 2015-10-21 英特尔公司 双端口静态随机存取存储器(sram)
CN106205682A (zh) * 2014-10-30 2016-12-07 爱思开海力士有限公司 包括漏电流感测单元的半导体集成电路设备及其操作方法
CN107210059A (zh) * 2015-02-23 2017-09-26 高通股份有限公司 用于读取p型场效应晶体管(pfet)传递栅极存储器位胞元的基于pfet的读出放大器，和相关存储器系统和方法
CN108062963A (zh) * 2017-11-23 2018-05-22 上海华力微电子有限公司 Sram读辅助电路
CN108305652A (zh) * 2017-01-13 2018-07-20 闪矽公司 数字数据储存单元及降低待机电流的方法
CN114999547A (zh) * 2022-05-17 2022-09-02 长江存储科技有限责任公司 存储器装置及其操作方法、存储器系统

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JP4721776B2 (ja) * 2004-07-13 2011-07-13 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7355905B2 (en) 2005-07-01 2008-04-08 P.A. Semi, Inc. Integrated circuit with separate supply voltage for memory that is different from logic circuit supply voltage
JP4965844B2 (ja) * 2005-10-20 2012-07-04 株式会社東芝 半導体メモリ装置
US7372721B2 (en) * 2005-10-26 2008-05-13 Manoj Sachdev Segmented column virtual ground scheme in a static random access memory (SRAM) circuit
US7411853B2 (en) * 2005-11-17 2008-08-12 Altera Corporation Volatile memory elements with elevated power supply levels for programmable logic device integrated circuits
JP2007172715A (ja) * 2005-12-20 2007-07-05 Fujitsu Ltd 半導体記憶装置およびその制御方法
JP2007199441A (ja) * 2006-01-27 2007-08-09 Hitachi Displays Ltd 画像表示装置
JP2007213699A (ja) * 2006-02-09 2007-08-23 Toshiba Corp 半導体記憶装置
DE102006012187B3 (de) * 2006-03-16 2007-10-11 Infineon Technologies Ag Vorrichtung und Verfahren zur Verringerung des Leckstroms von Speicherzellen im Energiesparmodus
US7898894B2 (en) * 2006-04-12 2011-03-01 International Business Machines Corporation Static random access memory (SRAM) cells
US7440312B2 (en) * 2006-10-02 2008-10-21 Analog Devices, Inc. Memory write timing system
US7925937B2 (en) * 2008-01-07 2011-04-12 Advanced Micro Devices, Inc. Apparatus for testing embedded memory read paths
TWI381380B (zh) * 2008-09-18 2013-01-01 Aicestar Technology Suzhou Corp 靜態隨機存取記憶體及其形成與控制方法
TWI419160B (zh) * 2009-01-07 2013-12-11 Univ Nat Chiao Tung 靜態隨機存取記憶體裝置
US9875788B2 (en) * 2010-03-25 2018-01-23 Qualcomm Incorporated Low-power 5T SRAM with improved stability and reduced bitcell size
US9171634B2 (en) * 2013-03-14 2015-10-27 Arm Limited Memory device and method of controlling leakage current within such a memory device
KR102072407B1 (ko) 2013-05-03 2020-02-03 삼성전자 주식회사 메모리 장치 및 그 구동 방법
KR20150102526A (ko) 2014-02-28 2015-09-07 에스케이하이닉스 주식회사 전자 장치
US10037400B2 (en) * 2016-06-02 2018-07-31 Marvell World Trade Ltd. Integrated circuit manufacturing process for aligning threshold voltages of transistors
US10062431B2 (en) 2016-11-07 2018-08-28 Ambiq Micro, Inc. SRAM with multiple power domains
US11094685B2 (en) 2016-11-29 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Static random access memory device
US10672775B2 (en) * 2018-05-25 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having strap cell
US12176025B2 (en) 2021-07-09 2024-12-24 Stmicroelectronics International N.V. Adaptive body bias management for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
US11984151B2 (en) 2021-07-09 2024-05-14 Stmicroelectronics International N.V. Adaptive bit line overdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
US12237007B2 (en) 2021-07-09 2025-02-25 Stmicroelectronics International N.V. Selective bit line clamping control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
US12087356B2 (en) 2021-07-09 2024-09-10 Stmicroelectronics International N.V. Serial word line actuation with linked source voltage supply modulation for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
US12354644B2 (en) 2021-07-09 2025-07-08 Stmicroelectronics International N.V. Adaptive word line underdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)

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Publication number Priority date Publication date Assignee Title
KR0184638B1 (ko) 1989-02-23 1999-04-15 엔.라이스 머레트 세그먼트 비트 라인 스태틱 랜덤 액세스 메모리 구조물
US5070482A (en) * 1989-04-06 1991-12-03 Sony Corporation Static random access memory
KR100392687B1 (ko) 1995-10-31 2003-11-28 마츠시타 덴끼 산교 가부시키가이샤 반도체 기억장치
US6091627A (en) * 1998-09-16 2000-07-18 Lucent Technologies, Inc. Message box memory cell for two-side asynchronous access
US6181608B1 (en) 1999-03-03 2001-01-30 Intel Corporation Dual Vt SRAM cell with bitline leakage control
US6661733B1 (en) * 2000-06-15 2003-12-09 Altera Corporation Dual-port SRAM in a programmable logic device
US6519204B2 (en) 2000-11-03 2003-02-11 Broadcom Corporation Very small swing high performance CMOS static memory (multi-port register file) with power reducing column multiplexing scheme
JP3983032B2 (ja) 2001-11-09 2007-09-26 沖電気工業株式会社 半導体記憶装置
KR100964266B1 (ko) * 2002-03-27 2010-06-16 더 리전트 오브 더 유니버시티 오브 캘리포니아 저전력 고성능의 메모리셀 및 관련방법
JP4278338B2 (ja) * 2002-04-01 2009-06-10 株式会社ルネサステクノロジ 半導体記憶装置
US6873565B1 (en) * 2003-10-10 2005-03-29 Hewlett-Packard Development Company, L.P. Dual-ported read SRAM cell with improved soft error immunity
US7009871B1 (en) * 2004-08-18 2006-03-07 Kabushiki Kaisha Toshiba Stable memory cell

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103106917A (zh) * 2011-11-10 2013-05-15 台湾积体电路制造股份有限公司 半导体制造方法
CN103106917B (zh) * 2011-11-10 2016-02-10 台湾积体电路制造股份有限公司 半导体制造方法
CN104995686A (zh) * 2013-03-15 2015-10-21 英特尔公司 双端口静态随机存取存储器(sram)
CN104995686B (zh) * 2013-03-15 2019-01-22 英特尔公司 双端口静态随机存取存储器(sram)
CN106205682A (zh) * 2014-10-30 2016-12-07 爱思开海力士有限公司 包括漏电流感测单元的半导体集成电路设备及其操作方法
CN106205682B (zh) * 2014-10-30 2020-03-06 爱思开海力士有限公司 包括漏电流感测单元的半导体集成电路设备及其操作方法
CN107210059A (zh) * 2015-02-23 2017-09-26 高通股份有限公司 用于读取p型场效应晶体管(pfet)传递栅极存储器位胞元的基于pfet的读出放大器，和相关存储器系统和方法
CN107210059B (zh) * 2015-02-23 2021-07-27 高通股份有限公司 用于读取p型场效应晶体管(pfet)传递栅极存储器位胞元的基于pfet的读出放大器，和相关存储器系统和方法
CN108305652A (zh) * 2017-01-13 2018-07-20 闪矽公司 数字数据储存单元及降低待机电流的方法
CN108305652B (zh) * 2017-01-13 2021-06-18 芯立嘉集成电路(杭州)有限公司 数字数据储存单元及降低待机电流的方法
CN108062963A (zh) * 2017-11-23 2018-05-22 上海华力微电子有限公司 Sram读辅助电路
CN114999547A (zh) * 2022-05-17 2022-09-02 长江存储科技有限责任公司 存储器装置及其操作方法、存储器系统

Also Published As

Publication number Publication date
TW200518091A (en) 2005-06-01
EP1642299A2 (en) 2006-04-05
WO2005006340A3 (en) 2005-06-30
EP1642299A4 (en) 2007-03-14
CA2529667A1 (en) 2005-01-20
WO2005006340A2 (en) 2005-01-20
KR20060040614A (ko) 2006-05-10
TWI278862B (en) 2007-04-11
US20050018474A1 (en) 2005-01-27
US20060233016A1 (en) 2006-10-19
JP2007529081A (ja) 2007-10-18
US7102915B2 (en) 2006-09-05
US7525834B2 (en) 2009-04-28

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