WO2005006340A2 - Sram cell structure and circuits - Google Patents

Sram cell structure and circuits Download PDF

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Publication number
WO2005006340A2
WO2005006340A2 PCT/US2004/021162 US2004021162W WO2005006340A2 WO 2005006340 A2 WO2005006340 A2 WO 2005006340A2 US 2004021162 W US2004021162 W US 2004021162W WO 2005006340 A2 WO2005006340 A2 WO 2005006340A2
Authority
WO
WIPO (PCT)
Prior art keywords
read
transistors
memory
recited
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/021162
Other languages
English (en)
French (fr)
Other versions
WO2005006340A3 (en
Inventor
Jeong-Duk Sohn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZMOS Technology Inc
Original Assignee
ZMOS Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZMOS Technology Inc filed Critical ZMOS Technology Inc
Priority to JP2006517820A priority Critical patent/JP2007529081A/ja
Priority to EP04777382A priority patent/EP1642299A4/en
Priority to CA002529667A priority patent/CA2529667A1/en
Publication of WO2005006340A2 publication Critical patent/WO2005006340A2/en
Publication of WO2005006340A3 publication Critical patent/WO2005006340A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Definitions

  • mne and mnf are two stacked transistors having width of 'W, wherein one terminal of transistor mne is connected to BLBi and one terminal of transistor mnf is connected to a virtual signal V g , shown represented as a dotted line interconnecting the two cell read sections with transistor mse(A). The other terminal of the two transistors, mne and mnf, are connected with each other.
  • the virtual signal line is connected to a source transistor, mse, which is turned-on in read operations depending on input condition.
  • two transistors e.g., msa, msb, mse and msd

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
PCT/US2004/021162 2003-07-01 2004-06-30 Sram cell structure and circuits Ceased WO2005006340A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006517820A JP2007529081A (ja) 2003-07-01 2004-06-30 Ｓｒａｍセル構造及び回路
EP04777382A EP1642299A4 (en) 2003-07-01 2004-06-30 SRAM CELL STRUCTURE AND CIRCUITS
CA002529667A CA2529667A1 (en) 2003-07-01 2004-06-30 Sram cell structure and circuits

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48456503P 2003-07-01 2003-07-01
US60/484,565 2003-07-01

Publications (2)

Publication Number Publication Date
WO2005006340A2 true WO2005006340A2 (en) 2005-01-20
WO2005006340A3 WO2005006340A3 (en) 2005-06-30

Family

ID=34062054

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/021162 Ceased WO2005006340A2 (en) 2003-07-01 2004-06-30 Sram cell structure and circuits

Country Status (8)

Country Link
US (2) US7102915B2 (https=)
EP (1) EP1642299A4 (https=)
JP (1) JP2007529081A (https=)
KR (1) KR20060040614A (https=)
CN (1) CN1816882A (https=)
CA (1) CA2529667A1 (https=)
TW (1) TWI278862B (https=)
WO (1) WO2005006340A2 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
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JP2007115337A (ja) * 2005-10-20 2007-05-10 Toshiba Corp 半導体メモリ装置
JP2007213699A (ja) * 2006-02-09 2007-08-23 Toshiba Corp 半導体記憶装置
DE102006012187B3 (de) * 2006-03-16 2007-10-11 Infineon Technologies Ag Vorrichtung und Verfahren zur Verringerung des Leckstroms von Speicherzellen im Energiesparmodus
CN100460971C (zh) * 2006-01-27 2009-02-11 株式会社日立显示器 图像显示装置

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JP4721776B2 (ja) * 2004-07-13 2011-07-13 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7355905B2 (en) 2005-07-01 2008-04-08 P.A. Semi, Inc. Integrated circuit with separate supply voltage for memory that is different from logic circuit supply voltage
US7372721B2 (en) * 2005-10-26 2008-05-13 Manoj Sachdev Segmented column virtual ground scheme in a static random access memory (SRAM) circuit
US7411853B2 (en) * 2005-11-17 2008-08-12 Altera Corporation Volatile memory elements with elevated power supply levels for programmable logic device integrated circuits
JP2007172715A (ja) * 2005-12-20 2007-07-05 Fujitsu Ltd 半導体記憶装置およびその制御方法
US7898894B2 (en) * 2006-04-12 2011-03-01 International Business Machines Corporation Static random access memory (SRAM) cells
US7440312B2 (en) * 2006-10-02 2008-10-21 Analog Devices, Inc. Memory write timing system
US7925937B2 (en) * 2008-01-07 2011-04-12 Advanced Micro Devices, Inc. Apparatus for testing embedded memory read paths
TWI381380B (zh) * 2008-09-18 2013-01-01 Aicestar Technology Suzhou Corp 靜態隨機存取記憶體及其形成與控制方法
TWI419160B (zh) * 2009-01-07 2013-12-11 Univ Nat Chiao Tung 靜態隨機存取記憶體裝置
US9875788B2 (en) * 2010-03-25 2018-01-23 Qualcomm Incorporated Low-power 5T SRAM with improved stability and reduced bitcell size
US8797787B2 (en) * 2011-11-10 2014-08-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing method
US9171634B2 (en) * 2013-03-14 2015-10-27 Arm Limited Memory device and method of controlling leakage current within such a memory device
US9208853B2 (en) * 2013-03-15 2015-12-08 Intel Corporation Dual-port static random access memory (SRAM)
KR102072407B1 (ko) 2013-05-03 2020-02-03 삼성전자 주식회사 메모리 장치 및 그 구동 방법
KR20150102526A (ko) 2014-02-28 2015-09-07 에스케이하이닉스 주식회사 전자 장치
KR20160050534A (ko) * 2014-10-30 2016-05-11 에스케이하이닉스 주식회사 누설 전류 감지부를 구비하는 반도체 집적 회로 장치 및 그 구동방법
US10163490B2 (en) * 2015-02-23 2018-12-25 Qualcomm Incorporated P-type field-effect transistor (PFET)-based sense amplifiers for reading PFET pass-gate memory bit cells, and related memory systems and methods
US10037400B2 (en) * 2016-06-02 2018-07-31 Marvell World Trade Ltd. Integrated circuit manufacturing process for aligning threshold voltages of transistors
US10062431B2 (en) 2016-11-07 2018-08-28 Ambiq Micro, Inc. SRAM with multiple power domains
US11094685B2 (en) 2016-11-29 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Static random access memory device
US10148254B2 (en) * 2017-01-13 2018-12-04 Flashsilicon Incorporation Standby current reduction in digital circuitries
CN108062963A (zh) * 2017-11-23 2018-05-22 上海华力微电子有限公司 Sram读辅助电路
US10672775B2 (en) * 2018-05-25 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having strap cell
US12176025B2 (en) 2021-07-09 2024-12-24 Stmicroelectronics International N.V. Adaptive body bias management for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
US11984151B2 (en) 2021-07-09 2024-05-14 Stmicroelectronics International N.V. Adaptive bit line overdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
US12237007B2 (en) 2021-07-09 2025-02-25 Stmicroelectronics International N.V. Selective bit line clamping control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
US12087356B2 (en) 2021-07-09 2024-09-10 Stmicroelectronics International N.V. Serial word line actuation with linked source voltage supply modulation for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
US12354644B2 (en) 2021-07-09 2025-07-08 Stmicroelectronics International N.V. Adaptive word line underdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
CN114999547B (zh) * 2022-05-17 2026-03-20 长江存储科技有限责任公司 存储器装置及其操作方法、存储器系统

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KR0184638B1 (ko) 1989-02-23 1999-04-15 엔.라이스 머레트 세그먼트 비트 라인 스태틱 랜덤 액세스 메모리 구조물
US5070482A (en) * 1989-04-06 1991-12-03 Sony Corporation Static random access memory
KR100392687B1 (ko) 1995-10-31 2003-11-28 마츠시타 덴끼 산교 가부시키가이샤 반도체 기억장치
US6091627A (en) * 1998-09-16 2000-07-18 Lucent Technologies, Inc. Message box memory cell for two-side asynchronous access
US6181608B1 (en) 1999-03-03 2001-01-30 Intel Corporation Dual Vt SRAM cell with bitline leakage control
US6661733B1 (en) * 2000-06-15 2003-12-09 Altera Corporation Dual-port SRAM in a programmable logic device
US6519204B2 (en) 2000-11-03 2003-02-11 Broadcom Corporation Very small swing high performance CMOS static memory (multi-port register file) with power reducing column multiplexing scheme
JP3983032B2 (ja) 2001-11-09 2007-09-26 沖電気工業株式会社 半導体記憶装置
KR100964266B1 (ko) * 2002-03-27 2010-06-16 더 리전트 오브 더 유니버시티 오브 캘리포니아 저전력 고성능의 메모리셀 및 관련방법
JP4278338B2 (ja) * 2002-04-01 2009-06-10 株式会社ルネサステクノロジ 半導体記憶装置
US6873565B1 (en) * 2003-10-10 2005-03-29 Hewlett-Packard Development Company, L.P. Dual-ported read SRAM cell with improved soft error immunity
US7009871B1 (en) * 2004-08-18 2006-03-07 Kabushiki Kaisha Toshiba Stable memory cell

Non-Patent Citations (1)

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Title
See references of EP1642299A4 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115337A (ja) * 2005-10-20 2007-05-10 Toshiba Corp 半導体メモリ装置
CN100460971C (zh) * 2006-01-27 2009-02-11 株式会社日立显示器 图像显示装置
JP2007213699A (ja) * 2006-02-09 2007-08-23 Toshiba Corp 半導体記憶装置
DE102006012187B3 (de) * 2006-03-16 2007-10-11 Infineon Technologies Ag Vorrichtung und Verfahren zur Verringerung des Leckstroms von Speicherzellen im Energiesparmodus
US7468930B2 (en) 2006-03-16 2008-12-23 Infineon Technologies Ag Apparatus and method for reducing the leakage current of memory cells in the energy-saving mode

Also Published As

Publication number Publication date
TW200518091A (en) 2005-06-01
EP1642299A2 (en) 2006-04-05
WO2005006340A3 (en) 2005-06-30
EP1642299A4 (en) 2007-03-14
CA2529667A1 (en) 2005-01-20
KR20060040614A (ko) 2006-05-10
TWI278862B (en) 2007-04-11
US20050018474A1 (en) 2005-01-27
US20060233016A1 (en) 2006-10-19
CN1816882A (zh) 2006-08-09
JP2007529081A (ja) 2007-10-18
US7102915B2 (en) 2006-09-05
US7525834B2 (en) 2009-04-28

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