CN1809919A - 电子器件、组件及制造电子器件的方法 - Google Patents
电子器件、组件及制造电子器件的方法 Download PDFInfo
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- CN1809919A CN1809919A CNA2004800170897A CN200480017089A CN1809919A CN 1809919 A CN1809919 A CN 1809919A CN A2004800170897 A CNA2004800170897 A CN A2004800170897A CN 200480017089 A CN200480017089 A CN 200480017089A CN 1809919 A CN1809919 A CN 1809919A
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- substrate
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- capacitor
- electronic device
- perpendicular interconnection
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- 238000000034 method Methods 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 239000003990 capacitor Substances 0.000 claims abstract description 85
- 238000005530 etching Methods 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 239000004020 conductor Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 14
- 239000003989 dielectric material Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 5
- 244000045947 parasite Species 0.000 claims description 4
- 230000008054 signal transmission Effects 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000011282 treatment Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 77
- 238000000151 deposition Methods 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 230000008901 benefit Effects 0.000 description 10
- 238000012545 processing Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000011900 installation process Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000008485 antagonism Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 210000001951 dura mater Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/171—Disposition
- H01L2224/1718—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/17181—On opposite sides of the body
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
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- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03300035 | 2003-06-20 | ||
EP03300035.7 | 2003-06-20 | ||
EP04300132.0 | 2004-03-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1809919A true CN1809919A (zh) | 2006-07-26 |
CN100365798C CN100365798C (zh) | 2008-01-30 |
Family
ID=33522480
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800170897A Expired - Lifetime CN100365798C (zh) | 2003-06-20 | 2004-06-11 | 电子器件、组件及制造电子器件的方法 |
CNA2004800173518A Pending CN1809925A (zh) | 2003-06-20 | 2004-06-16 | 优化的多用途组件 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2004800173518A Pending CN1809925A (zh) | 2003-06-20 | 2004-06-16 | 优化的多用途组件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070018298A1 (zh) |
EP (1) | EP1639643A1 (zh) |
JP (1) | JP2007516588A (zh) |
KR (1) | KR20060026434A (zh) |
CN (2) | CN100365798C (zh) |
WO (1) | WO2004114407A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8227847B2 (en) | 2008-02-20 | 2012-07-24 | Nxp B.V. | Ultra high density capacity comprising pillar-shaped capacitors formed on both sides of a substrate |
CN105371878A (zh) * | 2015-12-04 | 2016-03-02 | 歌尔声学股份有限公司 | 一种环境传感器及其制造方法 |
CN107087357A (zh) * | 2017-06-27 | 2017-08-22 | 深圳市刷新智能电子有限公司 | 一种温湿度传感器及温湿度传感器的制造方法 |
CN107800402A (zh) * | 2016-09-01 | 2018-03-13 | 三星电机株式会社 | 体声波滤波器装置及制造体声波滤波器装置的方法 |
US10991793B2 (en) | 2018-08-08 | 2021-04-27 | Shenzhen Weitongbo Technology Co., Ltd. | Double-sided capacitor and method for fabricating the same |
CN115151988A (zh) * | 2020-01-09 | 2022-10-04 | 株式会社村田制作所 | 具有配备有由基部支承的电容器的差分传输线的电子装置及相应的制造方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004005666B4 (de) * | 2004-02-05 | 2008-05-29 | Infineon Technologies Ag | Hochfrequenzanordnung, Verfahren zur Herstellung einer Hochfrequenzanordnung und Verwendung der Hochfrequenzanordnung |
US7679162B2 (en) * | 2005-12-19 | 2010-03-16 | Silicon Laboratories Inc. | Integrated current sensor package |
US7990132B2 (en) * | 2006-06-30 | 2011-08-02 | Silicon Laboratories Inc. | Current sensor including an integrated circuit die including a first and second coil |
KR100881182B1 (ko) | 2006-11-21 | 2009-02-05 | 삼성전자주식회사 | 웨이퍼 사이에 형성된 디커플링 커패시터, 그 디커플링커패시터를 포함하는 웨이퍼 스택 패키지, 및 그 패키지제조 방법 |
KR20090056044A (ko) * | 2007-11-29 | 2009-06-03 | 삼성전자주식회사 | 반도체 소자 패키지 및 이를 제조하는 방법 |
US7728578B2 (en) * | 2008-05-15 | 2010-06-01 | Silicon Laboratories Inc. | Method and apparatus for high current measurement |
KR102127335B1 (ko) * | 2012-10-29 | 2020-06-30 | 삼성전자주식회사 | 반도체 모듈 |
US20150168973A1 (en) * | 2013-12-18 | 2015-06-18 | Hashfast LLC | Stacked chips powered from shared voltage sources |
US9548288B1 (en) * | 2014-12-22 | 2017-01-17 | Apple Inc. | Integrated circuit die decoupling system with reduced inductance |
US9455189B1 (en) | 2015-06-14 | 2016-09-27 | Darryl G. Walker | Package including a plurality of stacked semiconductor devices including a capacitance enhanced through via and method of manufacture |
JP6658441B2 (ja) * | 2016-10-06 | 2020-03-04 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1514818A1 (de) * | 1951-01-28 | 1969-05-08 | Telefunken Patent | Festkoerperschaltung,bestehend aus einem Halbleiterkoerper mit eingebrachten aktiven Bauelementen und einer Isolierschicht mit aufgebrachten passiven Bauelementen und Leitungsbahnen |
US6593645B2 (en) * | 1999-09-24 | 2003-07-15 | United Microelectronics Corp. | Three-dimensional system-on-chip structure |
US6559499B1 (en) * | 2000-01-04 | 2003-05-06 | Agere Systems Inc. | Process for fabricating an integrated circuit device having capacitors with a multilevel metallization |
US6384468B1 (en) * | 2000-02-07 | 2002-05-07 | International Business Machines Corporation | Capacitor and method for forming same |
JP3854054B2 (ja) * | 2000-10-10 | 2006-12-06 | 株式会社東芝 | 半導体装置 |
ITTO20010050A1 (it) * | 2001-01-23 | 2002-07-23 | St Microelectronics Srl | Dispositivo integrato a semiconduttori includente interconnessioni adalta tensione attraversanti regioni a bassa tensione. |
US6633005B2 (en) * | 2001-10-22 | 2003-10-14 | Micro Mobio Corporation | Multilayer RF amplifier module |
TW533561B (en) * | 2002-02-26 | 2003-05-21 | Orient Semiconductor Elect Ltd | Opening-type multi-chip stacking package |
-
2004
- 2004-06-11 CN CNB2004800170897A patent/CN100365798C/zh not_active Expired - Lifetime
- 2004-06-16 US US10/562,295 patent/US20070018298A1/en not_active Abandoned
- 2004-06-16 CN CNA2004800173518A patent/CN1809925A/zh active Pending
- 2004-06-16 WO PCT/IB2004/002022 patent/WO2004114407A1/en not_active Application Discontinuation
- 2004-06-16 EP EP04736936A patent/EP1639643A1/en not_active Withdrawn
- 2004-06-16 JP JP2006516563A patent/JP2007516588A/ja not_active Withdrawn
- 2004-06-16 KR KR1020057024491A patent/KR20060026434A/ko not_active Application Discontinuation
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US8227847B2 (en) | 2008-02-20 | 2012-07-24 | Nxp B.V. | Ultra high density capacity comprising pillar-shaped capacitors formed on both sides of a substrate |
CN101946304B (zh) * | 2008-02-20 | 2013-06-05 | Nxp股份有限公司 | 包括在衬底的两个面上形成的平面形状电容器的超高密度容量 |
CN105371878A (zh) * | 2015-12-04 | 2016-03-02 | 歌尔声学股份有限公司 | 一种环境传感器及其制造方法 |
CN105371878B (zh) * | 2015-12-04 | 2017-08-25 | 歌尔股份有限公司 | 一种环境传感器及其制造方法 |
US10760929B2 (en) | 2015-12-04 | 2020-09-01 | Weifang Goertek Microelectronics Co., Ltd. | Environmental sensor and manufacturing method thereof |
CN107800402A (zh) * | 2016-09-01 | 2018-03-13 | 三星电机株式会社 | 体声波滤波器装置及制造体声波滤波器装置的方法 |
CN107800402B (zh) * | 2016-09-01 | 2021-10-29 | 三星电机株式会社 | 体声波滤波器装置及制造体声波滤波器装置的方法 |
CN107087357A (zh) * | 2017-06-27 | 2017-08-22 | 深圳市刷新智能电子有限公司 | 一种温湿度传感器及温湿度传感器的制造方法 |
CN107087357B (zh) * | 2017-06-27 | 2023-10-13 | 深圳刷新生物传感科技有限公司 | 一种温湿度传感器及温湿度传感器的制造方法 |
US10991793B2 (en) | 2018-08-08 | 2021-04-27 | Shenzhen Weitongbo Technology Co., Ltd. | Double-sided capacitor and method for fabricating the same |
CN115151988A (zh) * | 2020-01-09 | 2022-10-04 | 株式会社村田制作所 | 具有配备有由基部支承的电容器的差分传输线的电子装置及相应的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1639643A1 (en) | 2006-03-29 |
US20070018298A1 (en) | 2007-01-25 |
CN100365798C (zh) | 2008-01-30 |
CN1809925A (zh) | 2006-07-26 |
JP2007516588A (ja) | 2007-06-21 |
KR20060026434A (ko) | 2006-03-23 |
WO2004114407A1 (en) | 2004-12-29 |
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