JP5058597B2 - 電子デバイス、アセンブリ、電子デバイスの製造方法 - Google Patents
電子デバイス、アセンブリ、電子デバイスの製造方法 Download PDFInfo
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- JP5058597B2 JP5058597B2 JP2006516678A JP2006516678A JP5058597B2 JP 5058597 B2 JP5058597 B2 JP 5058597B2 JP 2006516678 A JP2006516678 A JP 2006516678A JP 2006516678 A JP2006516678 A JP 2006516678A JP 5058597 B2 JP5058597 B2 JP 5058597B2
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Description
前記基板の前記第1の面からエッチングするステップを含む、基板中に第1のトレンチを形成するステップと、
前記基板の一方の面からエッチングすることにより前記基板中に第2のトレンチを形成するとともに、前記基板の他方の面から材料を除去することにより前記第2のトレンチを開口するステップと、
前記第1のトレンチに導電面を設けるステップと、
前記基板上に誘電材料層を付けることにより、少なくとも前記基板の前記第1の面と前記第1および第2のトレンチの内面とを覆うステップと、
前記第1のトレンチ内および前記第2のトレンチ内に導電材料を付けるステップであって、前記第1のトレンチの導電材料は、前記誘電材料層および前記導電面とともに、前記キャパシタを形成し、前記第2のトレンチの導電材料が前記垂直相互接続部を形成するステップと、
を含むという点で達成される。
Claims (18)
- 第1の面と、第2の面とを有する半導体基板を備え、前記半導体基板には、キャパシタと、前記第1の面から前記第2の面へと前記半導体基板を貫いて延びる垂直相互接続部とが設けられ、前記第1の面に前記キャパシタが存在する電子デバイスにおいて、
前記キャパシタは複数のトレンチを備える垂直トレンチキャパシタであり、これらのトレンチ内には、第1の導電面と第2の導電面との間に第1誘電材料層が存在し、前記基板と前記垂直相互接続部との間に第2誘電材料層が存在し、前記第1および第2誘電材料層は同時に形成されることを特徴とする電子デバイス。 - 前記垂直相互接続部が第1の部分と第2の部分とを有し、前記第1の部分は前記基板の前記第1の面で露出されるとともに前記第2の部分よりも狭くかつ略円筒形状を成している請求項1記載の電子デバイス。
- 前記垂直相互接続部の前記トレンチは、導電材料によってほぼ満たされていることを特徴とする請求項1記載の電子デバイス。
- 前記垂直相互接続部は、前記基板を貫通する複数の平行な貫通孔を備え、これらの各貫通孔が導電材料で満たされることを特徴とする請求項2記載の電子デバイス。
- 外部キャリアに結合するための接点パッドが前記第2の面に存在し、
前記複数の平行な貫通孔の第1の貫通孔が接地のために使用され、
前記複数の平行な貫通孔の第2の貫通孔が信号送信のために使用される、
ことを特徴とする請求項4記載の電子デバイス。 - 前記複数の平行な貫通孔の第1および第2の貫通孔は、同軸構造を形成するように構成されていることを特徴とする請求項4記載の電子デバイス。
- 前記基板の前記第2の面には集積回路が区画されていることを特徴とする請求項1記載の電子デバイス。
- 前記基板は、前記垂直キャパシタに隣接して存在し且つ寄生電流に対する保護としての機能を果たす高オーム領域を備えていることを特徴とする請求項1記載の電子デバイス。
- 前記基板の前記第1の面には平面キャパシタが存在し、この平面キャパシタは、前記垂直キャパシタと同じ誘電材料層を備えていることを特徴とする請求項1記載の電子デバイス。
- 請求項1乃至9のいずれかに記載の電子デバイスと、半導体デバイスとを備えるアセンブリであって、前記半導体デバイスは、前記基板の前記第1の面に存在するボンディングパッドに対して電気的に接続されているアセンブリ。
- 第1の面と、第2の面とを有し且つ前記第1の面から前記第2の面へと延びる垂直相互接続部とキャパシタとが設けられた半導体基板を備えるとともに、前記第1の面に前記キャパシタが存在する電子デバイスを製造する方法において、
前記基板の前記第1の面からエッチングするステップを含む、基板中に第1のトレンチを形成するステップと、
前記基板の一方の面からエッチングすることにより前記基板中に第2のトレンチを形成するとともに、前記基板の他方の面から材料を除去することにより前記基板を貫通する前記第2のトレンチを開口するステップと、
前記第1のトレンチに導電面を設けるステップと、
前記基板上に誘電材料層を付けることにより、少なくとも前記基板の前記第1の面と前記第1および第2のトレンチの内面とを覆うステップと、
前記第1のトレンチ内および前記第2のトレンチ内に導電材料を付けるステップであって、前記第1のトレンチの導電材料は、前記誘電材料層および前記導電面とともに、前記キャパシタを形成し、前記第2のトレンチの導電材料が前記垂直相互接続部を形成するステップと、
を備えている方法。 - 前記第1のトレンチおよび前記第2のトレンチが1つのステップでエッチングされ、前記第1のトレンチは、前記貫通孔に通じる前記第2のトレンチよりも小さい直径を有し、その結果、前記第2のトレンチが前記第1のトレンチよりも更に基板中へと延び、前記トレンチが内面を有している請求項11記載の方法。
- 前記第2のトレンチ内に導電材料を付ける前記ステップは、シード層および電気メッキを付けるステップを含むことを特徴とする請求項12記載の方法。
- 前記複数の第2のトレンチは、隣接して互いに接続されることにより1つの垂直相互接続部を形成することを特徴とする請求項12記載の方法。
- 前記第1および第2のトレンチ内に付けられる導電材料がポリシリコンである請求項14記載の方法。
- 前記第2のトレンチを開口するために材料を除去する前記ステップは、ウェット化学エッチングを行なって空洞を形成するステップを含み、前記空洞は、前記第2のトレンチよりも大きい直径を有している請求項11記載の方法。
- 前記第2のトレンチは、前記第1のトレンチを形成する前に、前記基板の前記第2の面からのウェット化学エッチングによって形成されるとともに、空洞として形成され、前記第1のトレンチよりも大きい直径を有している請求項11記載の方法。
- 前記第2のトレンチは、前記第1のトレンチのエッチングと同じステップでエッチングされることにより開口される請求項17記載の方法。
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PCT/IB2004/050887 WO2004114397A1 (en) | 2003-06-20 | 2004-06-11 | Electronic device, assembly and methods of manufacturing an electronic device |
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Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005088699A1 (en) * | 2004-03-10 | 2005-09-22 | Koninklijke Philips Electronics N.V. | Method of manufacturing an electronic device and a resulting device |
EP1949418A2 (en) | 2005-11-08 | 2008-07-30 | Nxp B.V. | Integrated capacitor arrangement for ultrahigh capacitance values |
CN101356637B (zh) * | 2005-11-08 | 2012-06-06 | Nxp股份有限公司 | 使用临时帽层产生受到覆盖的穿透衬底的通道 |
US7844997B2 (en) * | 2006-01-12 | 2010-11-30 | Honeywell International Inc. | Securing standard test access port with an independent security key interface |
US7626257B2 (en) | 2006-01-18 | 2009-12-01 | Infineon Technologies Ag | Semiconductor devices and methods of manufacture thereof |
US8171542B2 (en) * | 2006-02-13 | 2012-05-01 | Honeywell International Inc. | Advanced encryption standard to provide hardware key interface |
US8135959B2 (en) * | 2006-04-07 | 2012-03-13 | Honeywell International Inc. | External key to provide protection to devices |
US8502362B2 (en) * | 2011-08-16 | 2013-08-06 | Advanced Analogic Technologies, Incorporated | Semiconductor package containing silicon-on-insulator die mounted in bump-on-leadframe manner to provide low thermal resistance |
JP2009535835A (ja) | 2006-05-02 | 2009-10-01 | エヌエックスピー ビー ヴィ | 改良された電極を備える電気デバイス |
WO2007131967A1 (en) | 2006-05-15 | 2007-11-22 | Koninklijke Philips Electronics N.V. | Integrated low-loss capacitor-arrray structure |
JP5069745B2 (ja) | 2006-06-20 | 2012-11-07 | エヌエックスピー ビー ヴィ | 集積回路及びこれを備えるアセンブリ |
WO2008021973A2 (en) * | 2006-08-10 | 2008-02-21 | Icemos Technology Corporation | Method of manufacturing a photodiode array with through-wafer vias |
US7531445B2 (en) * | 2006-09-26 | 2009-05-12 | Hymite A/S | Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane |
US8513789B2 (en) | 2006-10-10 | 2013-08-20 | Tessera, Inc. | Edge connect wafer level stacking with leads extending along edges |
US7901989B2 (en) | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
US7829438B2 (en) | 2006-10-10 | 2010-11-09 | Tessera, Inc. | Edge connect wafer level stacking |
US8569876B2 (en) | 2006-11-22 | 2013-10-29 | Tessera, Inc. | Packaged semiconductor chips with array |
US7791199B2 (en) | 2006-11-22 | 2010-09-07 | Tessera, Inc. | Packaged semiconductor chips |
US7952195B2 (en) | 2006-12-28 | 2011-05-31 | Tessera, Inc. | Stacked packages with bridging traces |
DE102007009383A1 (de) | 2007-02-20 | 2008-08-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiteranordnung und Verfahren zu deren Herstellung |
JP5584474B2 (ja) | 2007-03-05 | 2014-09-03 | インヴェンサス・コーポレイション | 貫通ビアによって前面接点に接続された後面接点を有するチップ |
BRPI0809049A2 (pt) * | 2007-03-23 | 2014-09-02 | Innovatier Inc | Cartão eletrônico e respectivo método de fabrico |
DE102007019552B4 (de) * | 2007-04-25 | 2009-12-17 | Infineon Technologies Ag | Verfahren zur Herstellung eines Substrats mit Durchführung sowie Substrat und Halbleitermodul mit Durchführung |
WO2008139392A2 (en) | 2007-05-10 | 2008-11-20 | Nxp B.V. | Dc-to-dc converter comprising a reconfigurable capacitor unit |
JP5330376B2 (ja) * | 2007-05-10 | 2013-10-30 | アイピーディーアイエイ | 集積装置及びその製造方法、並びに、システム・イン・パッケージ |
DE102007026445A1 (de) * | 2007-06-06 | 2008-12-11 | Robert Bosch Gmbh | Mikromechanisches Bauelement und Verfahren zur Herstellung eines mikromechanischen Bauelements |
ATE545152T1 (de) | 2007-07-05 | 2012-02-15 | Aac Microtec Ab | Durchkontaktierung durch einen wafer mit niedrigem widerstand |
CN101809739B (zh) | 2007-07-27 | 2014-08-20 | 泰塞拉公司 | 具有后应用的衬垫延长部分的重构晶片堆封装 |
JP2010535427A (ja) | 2007-07-31 | 2010-11-18 | テッセラ,インコーポレイテッド | 貫通シリコンビアを使用する半導体実装プロセス |
CN101861646B (zh) | 2007-08-03 | 2015-03-18 | 泰塞拉公司 | 利用再生晶圆的堆叠封装 |
US8043895B2 (en) | 2007-08-09 | 2011-10-25 | Tessera, Inc. | Method of fabricating stacked assembly including plurality of stacked microelectronic elements |
JP4585561B2 (ja) * | 2007-09-04 | 2010-11-24 | 株式会社東芝 | 半導体装置の製造方法 |
CN101946304B (zh) * | 2008-02-20 | 2013-06-05 | Nxp股份有限公司 | 包括在衬底的两个面上形成的平面形状电容器的超高密度容量 |
CN102067310B (zh) | 2008-06-16 | 2013-08-21 | 泰塞拉公司 | 带有边缘触头的晶片级芯片规模封装的堆叠及其制造方法 |
EP2334589B1 (en) * | 2008-09-30 | 2013-02-20 | Nxp B.V. | Robust high aspect ratio semiconductor device |
US7943473B2 (en) | 2009-01-13 | 2011-05-17 | Maxim Integrated Products, Inc. | Minimum cost method for forming high density passive capacitors for replacement of discrete board capacitors using a minimum cost 3D wafer-to-wafer modular integration scheme |
US8466542B2 (en) | 2009-03-13 | 2013-06-18 | Tessera, Inc. | Stacked microelectronic assemblies having vias extending through bond pads |
US8062975B2 (en) * | 2009-04-16 | 2011-11-22 | Freescale Semiconductor, Inc. | Through substrate vias |
US8791575B2 (en) | 2010-07-23 | 2014-07-29 | Tessera, Inc. | Microelectronic elements having metallic pads overlying vias |
US9640437B2 (en) | 2010-07-23 | 2017-05-02 | Tessera, Inc. | Methods of forming semiconductor elements using micro-abrasive particle stream |
US8796135B2 (en) | 2010-07-23 | 2014-08-05 | Tessera, Inc. | Microelectronic elements with rear contacts connected with via first or via middle structures |
US8076184B1 (en) * | 2010-08-16 | 2011-12-13 | Stats Chippac, Ltd. | Semiconductor device and method of forming wafer-level multi-row etched leadframe with base leads and embedded semiconductor die |
US8610259B2 (en) | 2010-09-17 | 2013-12-17 | Tessera, Inc. | Multi-function and shielded 3D interconnects |
US8847380B2 (en) | 2010-09-17 | 2014-09-30 | Tessera, Inc. | Staged via formation from both sides of chip |
JP5141740B2 (ja) * | 2010-10-04 | 2013-02-13 | 株式会社デンソー | 半導体装置およびその製造方法 |
US8232173B2 (en) * | 2010-11-01 | 2012-07-31 | International Business Machines Corporation | Structure and design structure for high-Q value inductor and method of manufacturing the same |
EP2450995A1 (en) | 2010-11-03 | 2012-05-09 | Nxp B.V. | Battery |
KR101059490B1 (ko) | 2010-11-15 | 2011-08-25 | 테세라 리써치 엘엘씨 | 임베드된 트레이스에 의해 구성된 전도성 패드 |
US8587126B2 (en) | 2010-12-02 | 2013-11-19 | Tessera, Inc. | Stacked microelectronic assembly with TSVs formed in stages with plural active chips |
US8736066B2 (en) | 2010-12-02 | 2014-05-27 | Tessera, Inc. | Stacked microelectronic assemby with TSVS formed in stages and carrier above chip |
US8637968B2 (en) | 2010-12-02 | 2014-01-28 | Tessera, Inc. | Stacked microelectronic assembly having interposer connecting active chips |
US8610264B2 (en) | 2010-12-08 | 2013-12-17 | Tessera, Inc. | Compliant interconnects in wafers |
US8742541B2 (en) | 2010-12-09 | 2014-06-03 | Tessera, Inc. | High density three-dimensional integrated capacitors |
US8502340B2 (en) * | 2010-12-09 | 2013-08-06 | Tessera, Inc. | High density three-dimensional integrated capacitors |
JP6028887B2 (ja) * | 2011-06-13 | 2016-11-24 | セイコーエプソン株式会社 | 配線基板、赤外線センサー及び貫通電極形成方法 |
JP5834563B2 (ja) * | 2011-07-14 | 2015-12-24 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US20140021603A1 (en) | 2012-07-23 | 2014-01-23 | Rf Micro Devices, Inc. | Using an interconnect bump to traverse through a passivation layer of a semiconductor die |
KR101985404B1 (ko) * | 2012-09-13 | 2019-06-03 | 해성디에스 주식회사 | 회로 기판의 제조 방법 및 그 방법으로 제조된 회로 기판 |
US10283854B2 (en) | 2012-10-08 | 2019-05-07 | Taoglas Group Holdings Limited | Low-cost ultra wideband LTE antenna |
CN105097794A (zh) * | 2014-04-25 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Esd防护器件及其制作方法 |
JP6528550B2 (ja) * | 2015-06-11 | 2019-06-12 | 株式会社デンソー | 半導体装置およびその製造方法 |
US11342189B2 (en) | 2015-09-17 | 2022-05-24 | Semiconductor Components Industries, Llc | Semiconductor packages with die including cavities and related methods |
US9893058B2 (en) | 2015-09-17 | 2018-02-13 | Semiconductor Components Industries, Llc | Method of manufacturing a semiconductor device having reduced on-state resistance and structure |
US9755310B2 (en) | 2015-11-20 | 2017-09-05 | Taoglas Limited | Ten-frequency band antenna |
CN105371878B (zh) | 2015-12-04 | 2017-08-25 | 歌尔股份有限公司 | 一种环境传感器及其制造方法 |
CA3015971A1 (en) * | 2016-03-01 | 2017-09-08 | Cardlab Aps | A circuit layer for an integrated circuit card |
US10432172B2 (en) * | 2016-09-01 | 2019-10-01 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic filter device and method of manufacturing the same |
US10944379B2 (en) * | 2016-12-14 | 2021-03-09 | Qualcomm Incorporated | Hybrid passive-on-glass (POG) acoustic filter |
US10199372B2 (en) * | 2017-06-23 | 2019-02-05 | Infineon Technologies Ag | Monolithically integrated chip including active electrical components and passive electrical components with chip edge stabilization structures |
US10381161B2 (en) * | 2017-11-06 | 2019-08-13 | Advanced Semiconductor Engineering, Inc. | Capacitor structure |
JP7021021B2 (ja) * | 2018-07-25 | 2022-02-16 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
US11398415B2 (en) * | 2018-09-19 | 2022-07-26 | Intel Corporation | Stacked through-silicon vias for multi-device packages |
US11404534B2 (en) * | 2019-06-28 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside capacitor techniques |
EP3849286A1 (en) * | 2020-01-09 | 2021-07-14 | Murata Manufacturing Co., Ltd. | Electronic device with differential transmission lines equipped with 3d capacitors supported by a base, and corresponding manufacturing method |
EP3930008A1 (en) * | 2020-06-24 | 2021-12-29 | Murata Manufacturing Co., Ltd. | Electronic component comprising a 3d capacitive structure |
JP2022147628A (ja) | 2021-03-23 | 2022-10-06 | 株式会社東芝 | 半導体装置 |
US20230018448A1 (en) * | 2021-07-14 | 2023-01-19 | Qualcomm Incorporated | Reduced impedance substrate |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1514818A1 (de) | 1951-01-28 | 1969-05-08 | Telefunken Patent | Festkoerperschaltung,bestehend aus einem Halbleiterkoerper mit eingebrachten aktiven Bauelementen und einer Isolierschicht mit aufgebrachten passiven Bauelementen und Leitungsbahnen |
US4017885A (en) | 1973-10-25 | 1977-04-12 | Texas Instruments Incorporated | Large value capacitor |
EP0516031A1 (en) * | 1991-05-29 | 1992-12-02 | Ramtron International Corporation | Stacked ferroelectric memory cell and method |
JPH07135210A (ja) | 1993-11-10 | 1995-05-23 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5872393A (en) * | 1995-10-30 | 1999-02-16 | Matsushita Electric Industrial Co., Ltd. | RF semiconductor device and a method for manufacturing the same |
US5905279A (en) * | 1996-04-09 | 1999-05-18 | Kabushiki Kaisha Toshiba | Low resistant trench fill for a semiconductor device |
JP3724110B2 (ja) * | 1997-04-24 | 2005-12-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5998292A (en) * | 1997-11-12 | 1999-12-07 | International Business Machines Corporation | Method for making three dimensional circuit integration |
US6025226A (en) * | 1998-01-15 | 2000-02-15 | International Business Machines Corporation | Method of forming a capacitor and a capacitor formed using the method |
TW442873B (en) * | 1999-01-14 | 2001-06-23 | United Microelectronics Corp | Three-dimension stack-type chip structure and its manufacturing method |
US6221769B1 (en) * | 1999-03-05 | 2001-04-24 | International Business Machines Corporation | Method for integrated circuit power and electrical connections via through-wafer interconnects |
US6617681B1 (en) | 1999-06-28 | 2003-09-09 | Intel Corporation | Interposer and method of making same |
US6559499B1 (en) * | 2000-01-04 | 2003-05-06 | Agere Systems Inc. | Process for fabricating an integrated circuit device having capacitors with a multilevel metallization |
US6384468B1 (en) | 2000-02-07 | 2002-05-07 | International Business Machines Corporation | Capacitor and method for forming same |
JP4386525B2 (ja) * | 2000-02-23 | 2009-12-16 | イビデン株式会社 | プリント配線板 |
JP3796099B2 (ja) | 2000-05-12 | 2006-07-12 | 新光電気工業株式会社 | 半導体装置用インターポーザー、その製造方法および半導体装置 |
JP4895420B2 (ja) | 2000-08-10 | 2012-03-14 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US6538300B1 (en) * | 2000-09-14 | 2003-03-25 | Vishay Intertechnology, Inc. | Precision high-frequency capacitor formed on semiconductor substrate |
US6737740B2 (en) * | 2001-02-08 | 2004-05-18 | Micron Technology, Inc. | High performance silicon contact for flip chip |
US6420776B1 (en) * | 2001-03-01 | 2002-07-16 | Amkor Technology, Inc. | Structure including electronic components singulated using laser cutting |
FR2830683A1 (fr) * | 2001-10-10 | 2003-04-11 | St Microelectronics Sa | Realisation d'inductance et de via dans un circuit monolithique |
US7030481B2 (en) | 2002-12-09 | 2006-04-18 | Internation Business Machines Corporation | High density chip carrier with integrated passive devices |
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2004
- 2004-06-11 EP EP04736684A patent/EP1639634B1/en not_active Expired - Lifetime
- 2004-06-11 JP JP2006516678A patent/JP5058597B2/ja not_active Expired - Lifetime
- 2004-06-11 DE DE602004020344T patent/DE602004020344D1/de not_active Expired - Lifetime
- 2004-06-11 KR KR1020057024459A patent/KR101086520B1/ko active IP Right Grant
- 2004-06-11 US US10/560,717 patent/US9530857B2/en active Active
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- 2004-06-11 AT AT04736684T patent/ATE427560T1/de not_active IP Right Cessation
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US20060131691A1 (en) | 2006-06-22 |
WO2004114397A1 (en) | 2004-12-29 |
ATE427560T1 (de) | 2009-04-15 |
US20170170131A1 (en) | 2017-06-15 |
JP2007516589A (ja) | 2007-06-21 |
DE602004020344D1 (de) | 2009-05-14 |
KR20060033866A (ko) | 2006-04-20 |
US9530857B2 (en) | 2016-12-27 |
EP1639634A1 (en) | 2006-03-29 |
EP1639634B1 (en) | 2009-04-01 |
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