CN1747170A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1747170A CN1747170A CNA2005101075896A CN200510107589A CN1747170A CN 1747170 A CN1747170 A CN 1747170A CN A2005101075896 A CNA2005101075896 A CN A2005101075896A CN 200510107589 A CN200510107589 A CN 200510107589A CN 1747170 A CN1747170 A CN 1747170A
- Authority
- CN
- China
- Prior art keywords
- pad
- pads
- signal
- probe
- test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
- G01R31/66—Testing of connections, e.g. of plugs or non-disconnectable joints
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002184340A JP4056805B2 (ja) | 2002-06-25 | 2002-06-25 | 半導体装置、およびその試験方法 |
JP184340/2002 | 2002-06-25 | ||
JP2002205270A JP3945641B2 (ja) | 2002-07-15 | 2002-07-15 | 半導体装置 |
JP205270/2002 | 2002-07-15 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB03120080XA Division CN1271696C (zh) | 2002-06-25 | 2003-03-12 | 半导体器件及其测试方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1747170A true CN1747170A (zh) | 2006-03-15 |
CN100390995C CN100390995C (zh) | 2008-05-28 |
Family
ID=29738455
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB03120080XA Expired - Fee Related CN1271696C (zh) | 2002-06-25 | 2003-03-12 | 半导体器件及其测试方法 |
CNB2005101075896A Expired - Fee Related CN100390995C (zh) | 2002-06-25 | 2003-03-12 | 半导体器件 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB03120080XA Expired - Fee Related CN1271696C (zh) | 2002-06-25 | 2003-03-12 | 半导体器件及其测试方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6885212B2 (zh) |
KR (1) | KR100886857B1 (zh) |
CN (2) | CN1271696C (zh) |
TW (1) | TWI246136B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI454705B (zh) * | 2009-06-29 | 2014-10-01 | Nihon Micronics Kk | 探針卡及檢查裝置 |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6885212B2 (en) * | 2002-06-25 | 2005-04-26 | Fujitsu Limited | Semiconductor device and test method for the same |
JP4510370B2 (ja) * | 2002-12-25 | 2010-07-21 | パナソニック株式会社 | 半導体集積回路装置 |
JP2005243907A (ja) * | 2004-02-26 | 2005-09-08 | Renesas Technology Corp | 半導体装置 |
US7203877B2 (en) * | 2005-01-04 | 2007-04-10 | Lsi Logic Corporation | Failure analysis and testing of semi-conductor devices using intelligent software on automated test equipment (ATE) |
JP4322827B2 (ja) * | 2005-02-09 | 2009-09-02 | エルピーダメモリ株式会社 | 半導体チップ |
US7457170B2 (en) * | 2005-11-14 | 2008-11-25 | Infineon Technologies Ag | Memory device that provides test results to multiple output pads |
JP4882572B2 (ja) * | 2005-11-16 | 2012-02-22 | 株式会社デンソー | 半導体集積回路 |
JP4108716B2 (ja) * | 2006-05-25 | 2008-06-25 | エルピーダメモリ株式会社 | 半導体集積回路 |
JP5120868B2 (ja) * | 2006-07-13 | 2013-01-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7423446B2 (en) * | 2006-08-03 | 2008-09-09 | International Business Machines Corporation | Characterization array and method for determining threshold voltage variation |
US7839160B1 (en) * | 2007-03-21 | 2010-11-23 | Marvell International Ltd. | Stress programming of transistors |
US7890737B2 (en) * | 2007-07-02 | 2011-02-15 | Denso Corporation | Microcomputer and functional evaluation chip |
US8862426B2 (en) * | 2007-12-20 | 2014-10-14 | International Business Machines Corporation | Method and test system for fast determination of parameter variation statistics |
KR100929121B1 (ko) * | 2007-12-24 | 2009-11-30 | 주식회사 에스디에이 | 프로브 카드 통합검사장치 및 그 제공방법 |
CN101545942B (zh) * | 2008-03-27 | 2013-05-08 | 矽创电子股份有限公司 | 用于测试连接垫的电路 |
US7868640B2 (en) * | 2008-04-02 | 2011-01-11 | International Business Machines Corporation | Array-based early threshold voltage recovery characterization measurement |
TWI393246B (zh) * | 2009-07-10 | 2013-04-11 | Fitipower Integrated Tech Inc | 靜電保護裝置 |
KR101094945B1 (ko) * | 2009-12-28 | 2011-12-15 | 주식회사 하이닉스반도체 | 반도체 장치 및 이의 프로브 테스트 방법 |
KR101110818B1 (ko) * | 2009-12-28 | 2012-02-24 | 주식회사 하이닉스반도체 | 반도체 집적회로 |
KR101086499B1 (ko) * | 2009-12-29 | 2011-11-25 | 주식회사 하이닉스반도체 | 반도체 집적 회로 |
US8519729B2 (en) * | 2010-02-10 | 2013-08-27 | Sunpower Corporation | Chucks for supporting solar cell in hot spot testing |
US9020796B2 (en) * | 2010-11-22 | 2015-04-28 | Certon Software Inc. | Model based verification using intelligent connectors |
KR101198141B1 (ko) * | 2010-12-21 | 2012-11-12 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
US20130015871A1 (en) * | 2011-07-11 | 2013-01-17 | Cascade Microtech, Inc. | Systems, devices, and methods for two-sided testing of electronic devices |
KR101313555B1 (ko) * | 2011-11-10 | 2013-10-01 | 삼성중공업 주식회사 | 인쇄 회로 기판에 실장된 아이솔레이터의 검사 장치 |
CN103364712A (zh) * | 2012-04-09 | 2013-10-23 | 快捷半导体(苏州)有限公司 | Evs测试电路、evs测试系统和evs测试方法 |
CN103852701B (zh) * | 2012-12-04 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管测试电路及对应的测试方法 |
CN103713182B (zh) * | 2014-01-07 | 2016-08-17 | 上海华虹宏力半导体制造有限公司 | 芯片内部电压的监测电路及系统 |
KR102184697B1 (ko) * | 2014-02-20 | 2020-12-01 | 에스케이하이닉스 주식회사 | 반도체 장치 |
CN103954877B (zh) * | 2014-04-15 | 2017-03-08 | 京东方科技集团股份有限公司 | 集成电路测试方法及测试装置 |
CN104101855A (zh) * | 2014-07-24 | 2014-10-15 | 上海华力微电子有限公司 | 监控探针卡漏电的方法及探针卡漏电监控系统 |
KR20160034698A (ko) * | 2014-09-22 | 2016-03-30 | 에스케이하이닉스 주식회사 | 반도체장치 및 이를 포함하는 반도체시스템 |
GB2533967B (en) * | 2015-01-12 | 2021-08-25 | Advanced Risc Mach Ltd | Adapting the usage configuration of integrated circuit input-output pads |
KR20170070434A (ko) | 2015-12-14 | 2017-06-22 | 삼성전자주식회사 | 반도체 장치의 테스트 구조, 테스트 시스템 및 반도체 장치의 웨이퍼 레벨 테스트 방법 |
KR102482023B1 (ko) | 2016-01-28 | 2022-12-28 | 삼성전자주식회사 | 적층 메모리 칩 전기적 단락 검출 장치 및 방법 |
US10269789B2 (en) * | 2016-09-30 | 2019-04-23 | Synopsys, Inc. | Protection circuit for integrated circuit die-let after scribe cut |
KR102298923B1 (ko) | 2017-05-24 | 2021-09-08 | 에스케이하이닉스 주식회사 | 반도체 장치, 테스트 방법 및 이를 포함하는 시스템 |
KR102039112B1 (ko) * | 2017-06-20 | 2019-10-31 | 포스필 주식회사 | 피시험 디바이스를 테스트하기 위한 프로세서 기반의 계측 방법 및 이를 이용한 계측 장치 |
KR102605620B1 (ko) * | 2018-09-13 | 2023-11-23 | 삼성전자주식회사 | 프로브 카드 검사용 웨이퍼, 프로브 카드 검사 시스템 및 프로브 카드 검사 방법 |
CN110261753A (zh) * | 2019-05-06 | 2019-09-20 | 长江存储科技有限责任公司 | 半导体器件失效分析方法 |
Family Cites Families (22)
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---|---|---|---|---|
US4348759A (en) | 1979-12-17 | 1982-09-07 | International Business Machines Corporation | Automatic testing of complex semiconductor components with test equipment having less channels than those required by the component under test |
JPH07109844B2 (ja) * | 1988-09-28 | 1995-11-22 | 日本電気株式会社 | 半導体集積回路 |
JPH02183551A (ja) | 1989-01-10 | 1990-07-18 | Toshiba Corp | 半導体装置 |
US5053700A (en) * | 1989-02-14 | 1991-10-01 | Amber Engineering, Inc. | Method for wafer scale testing of redundant integrated circuit dies |
US5059899A (en) * | 1990-08-16 | 1991-10-22 | Micron Technology, Inc. | Semiconductor dies and wafers and methods for making |
US5581432A (en) * | 1995-07-25 | 1996-12-03 | Motorola, Inc. | Clamp circuit and method for identifying a safe operating area |
US5969538A (en) * | 1996-10-31 | 1999-10-19 | Texas Instruments Incorporated | Semiconductor wafer with interconnect between dies for testing and a process of testing |
US5760643A (en) * | 1995-10-31 | 1998-06-02 | Texas Instruments Incorporated | Integrated circuit die with selective pad-to-pad bypass of internal circuitry |
KR0172372B1 (ko) | 1995-12-22 | 1999-03-30 | 김광호 | 반도체 메모리 장치의 병합 데이타 출력 모드 선택 방법 |
US6326801B1 (en) * | 1996-10-31 | 2001-12-04 | Texas Instruments Incorporated | Wafer of semiconductor material with dies, probe areas and leads |
US6307162B1 (en) * | 1996-12-09 | 2001-10-23 | International Business Machines Corporation | Integrated circuit wiring |
US6103553A (en) * | 1996-12-11 | 2000-08-15 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing a known good die utilizing a substrate |
JPH1116391A (ja) | 1997-06-19 | 1999-01-22 | Nec Ic Microcomput Syst Ltd | 半導体記憶回路 |
US6163867A (en) * | 1998-08-28 | 2000-12-19 | Hewlett-Packard Company | Input-output pad testing using bi-directional pads |
US6343369B1 (en) * | 1998-09-15 | 2002-01-29 | Microconnect, Inc. | Methods for making contact device for making connection to an electronic circuit device and methods of using the same |
JP2000208569A (ja) | 1999-01-14 | 2000-07-28 | Mitsubishi Electric Corp | 測定装置及び測定方法 |
US6374379B1 (en) * | 1999-02-05 | 2002-04-16 | Teradyne, Inc. | Low-cost configuration for monitoring and controlling parametric measurement units in automatic test equipment |
US6586266B1 (en) * | 1999-03-01 | 2003-07-01 | Megic Corporation | High performance sub-system design and assembly |
JP2000286315A (ja) * | 1999-03-29 | 2000-10-13 | Sanyo Electric Co Ltd | 半導体チップのパッド配置方法 |
JP2001014892A (ja) | 1999-06-25 | 2001-01-19 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2001308277A (ja) * | 2000-04-25 | 2001-11-02 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US6885212B2 (en) * | 2002-06-25 | 2005-04-26 | Fujitsu Limited | Semiconductor device and test method for the same |
-
2003
- 2003-02-03 US US10/356,489 patent/US6885212B2/en not_active Expired - Fee Related
- 2003-02-12 TW TW092102893A patent/TWI246136B/zh not_active IP Right Cessation
- 2003-02-27 KR KR1020030012187A patent/KR100886857B1/ko not_active IP Right Cessation
- 2003-03-12 CN CNB03120080XA patent/CN1271696C/zh not_active Expired - Fee Related
- 2003-03-12 CN CNB2005101075896A patent/CN100390995C/zh not_active Expired - Fee Related
-
2005
- 2005-03-15 US US11/079,142 patent/US7330043B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI454705B (zh) * | 2009-06-29 | 2014-10-01 | Nihon Micronics Kk | 探針卡及檢查裝置 |
Also Published As
Publication number | Publication date |
---|---|
US7330043B2 (en) | 2008-02-12 |
TWI246136B (en) | 2005-12-21 |
US6885212B2 (en) | 2005-04-26 |
KR100886857B1 (ko) | 2009-03-05 |
TW200400579A (en) | 2004-01-01 |
CN1271696C (zh) | 2006-08-23 |
US20050156589A1 (en) | 2005-07-21 |
CN100390995C (zh) | 2008-05-28 |
CN1467810A (zh) | 2004-01-14 |
US20030234661A1 (en) | 2003-12-25 |
KR20040002442A (ko) | 2004-01-07 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20081212 Address after: Tokyo, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kanagawa, Japan Patentee before: Fujitsu Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081212 |
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C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa Patentee before: Fujitsu Microelectronics Ltd. |
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CP02 | Change in the address of a patent holder |
Address after: Kanagawa Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: SUOSI FUTURE CO., LTD. Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD. Effective date: 20150520 |
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Effective date of registration: 20150520 Address after: Kanagawa Patentee after: SOCIONEXT Inc. Address before: Kanagawa Patentee before: FUJITSU MICROELECTRONICS Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
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CF01 | Termination of patent right due to non-payment of annual fee |