CN1702876A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1702876A CN1702876A CNA2005100647421A CN200510064742A CN1702876A CN 1702876 A CN1702876 A CN 1702876A CN A2005100647421 A CNA2005100647421 A CN A2005100647421A CN 200510064742 A CN200510064742 A CN 200510064742A CN 1702876 A CN1702876 A CN 1702876A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000009792 diffusion process Methods 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims description 22
- 229910052734 helium Inorganic materials 0.000 claims description 17
- 239000001307 helium Substances 0.000 claims description 17
- 239000002800 charge carrier Substances 0.000 claims description 15
- 230000002401 inhibitory effect Effects 0.000 claims description 12
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 8
- 238000011084 recovery Methods 0.000 abstract description 10
- 150000002500 ions Chemical class 0.000 abstract 5
- -1 He ions Chemical class 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000003556 assay Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004158223 | 2004-05-27 | ||
JP2004158223A JP2005340528A (ja) | 2004-05-27 | 2004-05-27 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1702876A true CN1702876A (zh) | 2005-11-30 |
CN100487913C CN100487913C (zh) | 2009-05-13 |
Family
ID=35424243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100647421A Active CN100487913C (zh) | 2004-05-27 | 2005-04-18 | 半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7282781B2 (zh) |
JP (1) | JP2005340528A (zh) |
CN (1) | CN100487913C (zh) |
DE (1) | DE102005014932B4 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102694032A (zh) * | 2011-03-24 | 2012-09-26 | 株式会社东芝 | 功率用半导体装置 |
CN103715083A (zh) * | 2012-09-28 | 2014-04-09 | 中国科学院微电子研究所 | Frd的制备方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10316222B3 (de) * | 2003-04-09 | 2005-01-20 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Verfahren zur Herstellung eines robusten Halbleiterbauelements und damit hergestelltes Halbleiterbauelement |
DE102007062305B3 (de) * | 2007-12-21 | 2009-05-28 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleiterbauelement mit grabenförmiger Feldringstruktur und Herstellungsverfahren hierzu |
JP5381420B2 (ja) | 2008-07-22 | 2014-01-08 | 富士電機株式会社 | 半導体装置 |
JP6263966B2 (ja) | 2012-12-12 | 2018-01-24 | 富士電機株式会社 | 半導体装置 |
JP6103038B2 (ja) | 2013-03-21 | 2017-03-29 | 富士電機株式会社 | 半導体装置 |
JP6496992B2 (ja) * | 2014-07-22 | 2019-04-10 | 富士電機株式会社 | 半導体装置 |
JP2016029685A (ja) * | 2014-07-25 | 2016-03-03 | 株式会社東芝 | 半導体装置 |
DE112015000206T5 (de) | 2014-10-03 | 2016-08-25 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
CN106489210B (zh) * | 2015-01-14 | 2019-08-13 | 富士电机株式会社 | 半导体装置 |
JP6766889B2 (ja) * | 2017-01-17 | 2020-10-14 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7052322B2 (ja) * | 2017-11-28 | 2022-04-12 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4291329A (en) * | 1979-08-31 | 1981-09-22 | Westinghouse Electric Corp. | Thyristor with continuous recombination center shunt across planar emitter-base junction |
CH668860A5 (de) * | 1986-02-05 | 1989-01-31 | Bbc Brown Boveri & Cie | Halbleiterbauelement und verfahren zu dessen herstellung. |
JPH04314367A (ja) * | 1991-04-12 | 1992-11-05 | Fuji Electric Co Ltd | プレーナダイオードおよびその製造方法 |
JPH06314801A (ja) * | 1993-03-05 | 1994-11-08 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JPH10116998A (ja) | 1996-10-14 | 1998-05-06 | Toyota Motor Corp | 半導体装置およびその製造方法 |
JPH10200132A (ja) | 1997-01-10 | 1998-07-31 | Fuji Electric Co Ltd | 高速ダイオード |
US6603189B2 (en) * | 1997-08-14 | 2003-08-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with deliberately damaged layer having a shorter carrier lifetime therein |
DE19837944A1 (de) * | 1998-08-21 | 2000-02-24 | Asea Brown Boveri | Verfahren zur Fertigung eines Halbleiterbauelements |
EP1030375A4 (en) * | 1998-09-10 | 2001-07-04 | Mitsubishi Electric Corp | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
JP4543457B2 (ja) * | 1999-10-28 | 2010-09-15 | 富士電機システムズ株式会社 | イオン注入用遮蔽マスクと半導体装置の製造方法 |
JP4653273B2 (ja) | 1999-11-05 | 2011-03-16 | 富士電機システムズ株式会社 | 半導体装置、および、その製造方法 |
JP5061407B2 (ja) * | 2001-01-31 | 2012-10-31 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP2004006664A (ja) | 2002-04-10 | 2004-01-08 | Sanken Electric Co Ltd | 半導体素子の製造方法 |
JP3910922B2 (ja) | 2003-02-12 | 2007-04-25 | 三菱電機株式会社 | 半導体装置 |
-
2004
- 2004-05-27 JP JP2004158223A patent/JP2005340528A/ja active Pending
-
2005
- 2005-03-15 US US11/080,367 patent/US7282781B2/en active Active
- 2005-04-01 DE DE200510014932 patent/DE102005014932B4/de not_active Revoked
- 2005-04-18 CN CNB2005100647421A patent/CN100487913C/zh active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102694032A (zh) * | 2011-03-24 | 2012-09-26 | 株式会社东芝 | 功率用半导体装置 |
CN102694032B (zh) * | 2011-03-24 | 2015-06-17 | 株式会社东芝 | 功率用半导体装置 |
CN103715083A (zh) * | 2012-09-28 | 2014-04-09 | 中国科学院微电子研究所 | Frd的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2005340528A (ja) | 2005-12-08 |
DE102005014932A1 (de) | 2005-12-22 |
CN100487913C (zh) | 2009-05-13 |
US20050263842A1 (en) | 2005-12-01 |
DE102005014932B4 (de) | 2010-12-02 |
US7282781B2 (en) | 2007-10-16 |
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GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJI ELECTRIC + ELECTRONICS CO., LTD. Free format text: FORMER NAME: FUJI ELECTRIC DEVICE TECHNOLOG |
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Address after: Tokyo, Japan Patentee after: Fuji Electronic Device Technol Address before: Tokyo, Japan Patentee before: Fuji Electric Electronic Co., Ltd. |
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Owner name: FUJI MOTOR SYSTEM CO., LTD. Free format text: FORMER OWNER: FUJI MOTOR ELECTRONICS TECHNOLOGY CO., LTD. Effective date: 20100511 |
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Owner name: FUJI ELECTRIC CO., LTD. Free format text: FORMER NAME: FUJI ELECTRIC SYSTEMS CO., LTD. |
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Address after: Japan's Kawasaki City Patentee after: Fuji Electric Co., Ltd. Address before: Tokyo, Japan Patentee before: Fuji Electric Systems Co., Ltd. |