JP6467882B2 - 半導体装置、および、半導体装置の製造方法 - Google Patents
半導体装置、および、半導体装置の製造方法 Download PDFInfo
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Description
特許文献1 特開平6−69509号公報
特許文献2 特開2002−305305号公報
特許文献3 特開2006−324431号公報
Claims (7)
- 表面側にMOSゲート構造が形成された第1導電型のベース層と、
前記ベース層の裏面側に形成された第2導電型の第1コレクタ層と、
前記第1コレクタ層の裏面側に前記ベース層と同一の材料で形成され、前記第1コレクタ層よりも薄く、前記第1コレクタ層よりも不純物濃度が高い前記第2導電型の第2コレクタ層と、
前記第2コレクタ層の裏面側に形成されたコレクタ電極と、
前記ベース層の表面において前記MOSゲート構造を囲み、かつ、前記ベース層の表面から前記第1コレクタ層の表面まで形成された前記第2導電型の分離層と
を備え、
前記第1コレクタ層は、前記分離層に隣接して前記ベース層の表面側から拡散した不純物を含む領域を有しており、
前記領域は前記第2コレクタ層とも接する、
半導体装置。 - 前記第1コレクタ層において、前記領域の不純物濃度は、同一の深さ位置において、前記領域ではない部分の前記第1コレクタ層の不純物濃度よりも高い
請求項1に記載の半導体装置。 - 前記第1コレクタ層は、不純物濃度が2×10 14 cm −3 から2×10 15 cm −3 の領域を有し、前記第2コレクタ層の不純物濃度は、1×10 17 cm −3 から5×10 18 cm −3 である、請求項1または2に記載の半導体装置。
- 半導体装置の製造方法であって、
第1導電型のベース基板の表面側に対して選択的に、第2導電型に対応する不純物を注入し、かつ、前記ベース基板の裏面側に前記第2導電型に対応する不純物を注入する注入工程と、
前記ベース基板の表面側および裏面側の不純物を同時に拡散処理することで、前記第1導電型のベース層と、前記ベース層の裏面側に形成された前記第2導電型の第1コレクタ層と、前記ベース層の表面から前記第1コレクタ層の表面まで形成された前記第2導電型の分離層とを形成する拡散工程と、
前記ベース層の表面側において前記分離層に囲まれた第1領域にMOSゲート構造を形成するMOS形成工程と、
前記第1コレクタ層の裏面側に前記第2導電型に対応する不純物を注入することで、前記ベース層と同一の材料で前記第1コレクタ層よりも薄く形成され、前記第1コレクタ層よりも不純物濃度が高い前記第2導電型の第2コレクタ層を形成する第2コレクタ層形成工程と、
前記第2コレクタ層の裏面側にコレクタ電極を形成するコレクタ電極形成工程と
を備え、
前記第1コレクタ層は、前記分離層を形成すべく前記ベース基板の表面側から拡散した不純物が存在する第2領域を含むように形成されており、
前記拡散工程の後であって前記第2コレクタ層形成工程より前に、前記第1コレクタ層の裏面に前記第2領域が露出するように前記第1コレクタ層の裏面を研削する研削工程を備える製造方法。 - 前記研削工程を、前記MOS形成工程の後であり、かつ、前記コレクタ電極形成工程の前に行う
請求項4に記載の製造方法。 - 前記注入工程において、前記ベース基板の裏面側から注入する不純物の単位面積あたりの濃度は、前記ベース基板の表面側から注入する不純物の単位面積あたりの濃度よりも低い、請求項4に記載の製造方法。
- 前記第1コレクタ層は、不純物濃度が2×10 14 cm −3 から2×10 15 cm −3 の領域を有し、前記第2コレクタ層の不純物濃度は、1×10 17 cm −3 から5×10 18 cm −3 である、請求項4から6のいずれか一項に記載の製造方法。
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