CN1664991A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN1664991A
CN1664991A CN2005100530225A CN200510053022A CN1664991A CN 1664991 A CN1664991 A CN 1664991A CN 2005100530225 A CN2005100530225 A CN 2005100530225A CN 200510053022 A CN200510053022 A CN 200510053022A CN 1664991 A CN1664991 A CN 1664991A
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Prior art keywords
semiconductor device
alignment mark
cutting
semiconductor
semiconductor wafer
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CN2005100530225A
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CN100446187C (zh
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野间崇
关嘉则
和久井元明
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Northeast Sanyo Semi-Conductive Co Ltd
Sanyo Electric Co Ltd
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Northeast Sanyo Semi-Conductive Co Ltd
Sanyo Electric Co Ltd
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Abstract

一种半导体装置及其制造方法，在制造粘贴支承体构成的半导体装置时的切削工序中谋求切削精度的提高。本发明的半导体装置的制造方法具有使刀片沿切割区域(60)移动切削粘贴了玻璃衬底(14)的半导体晶片(10)的工序，其具有以下特征。即，在半导体晶片(10)上的切割区域(60)的两侧形成相互相对的一对对准标记(51a)、(51b)。而且，在切削工序中，在使旋转刀片的位置与切割区域(60)的中心即中心线(61)对准时，利用识别相机检测对准标记(51a)、(51b)的位置，基于该检测结果求出中心线(61)，将旋转刀片的位置对准在该中心线(61)上进行切割。

Description

半导体装置及其制造方法
技术领域
本发明涉及半导体装置及其制造方法，特别是涉及粘贴支承体构成的半导体晶片的切削工序中的半导体装置及其制造方法。
背景技术
目前，作为具有与半导体芯片的外形尺寸大致相同尺寸的芯片尺寸封装件的一种，可知有BGA(焊球阵列Ball Grip Array)型半导体装置。该BGA型半导体装置中，将由焊锡等金属部件构成的球状导电端子格子状在封装件的一主面上排列多个，且与形成于封装件另一侧面上的半导体芯片电连接。
而且，在将该BGA型半导体装置装入电子设备中时，通过将各导电端子压装在印刷线路板上的配线图案上，将半导体芯片和搭载于印刷线路板上的外部电路电连接。
这种BGA型半导体装置与具有向侧部突出的引脚的SOP(小外形封装Small Outline Package)或QFP(四边引线扁平封装Quad Flat Packagae)等其它类型的芯片尺寸封装件相比，可设置多个导电端子，并且，具有可小型化的优点。BGA型半导体装置具有作为例如搭载于手机中的数码相机中的图像传感器芯片的用途。
图13是现有BGA型半导体装置的概略结构图，图13(a)是该BGA型半导体装置表面侧的立体图。图13(b)是该BGA型半导体装置背面侧的立体图。
BGA型半导体装置100在作为支承体的第一及第二玻璃衬底104a、104b之间介由树脂105a、105b密封有半导体芯片101。在第二玻璃衬底104b的一主面上，即BGA型半导体装置100的背面上格子状配置多个球状端子(以下称为导电端子111)。该导电端子111介由第二配线109连接到半导体芯片101。在多个第二配线109上连接有分别从半导体芯片101内部引出的铝配线，使各导电端子111和半导体芯片101形成电连接。
参照图14进一步详细说明该BGA型半导体装置100的剖面结构。图14表示沿切割线分割成各个半导体芯片的BGA型半导体装置100的剖面图。
在配置于半导体芯片101表面的绝缘膜102上设有第一配线103。该半导体芯片101通过树脂105a与第一玻璃衬底104a粘接。另外，该半导体芯片101的背面通过树脂105b与第二玻璃衬底104b粘接。而且，第一配线103的一端与第二配线109连接。该第二配线109从第一配线103的一端向第二玻璃衬底104b的表面延伸。在延伸于第二玻璃衬底104b上的第二配线109上形成有球状导电端子111。
另外，所述的技术记载于例如以下的专利文献1中。
专利文献1：专利公表2002-512436号公报
在所述半导体装置的制造方法中，在将粘接有第一及第二玻璃衬底104a、104b的半导体晶片沿切割线分割成各半导体芯片时，将用于切削的切割片与切割线的中心对位。但是，目前正确地进行这种对位是困难的。其结果产生了切割时切削精度低的问题。
发明内容
因此，本发明是在制造粘合支承体构成的半导体装置时的切削工序中谋求切削精度的提高的发明。
本发明的制造方法是鉴于所述问题而开发的，其特征在于，可可靠地进行沿切割线从半导体晶片侧部分地切削、或完全切削(即切断)的工序。
即，本发明提供一种半导体装置的制造方法，在沿划定于半导体晶片表面的切割区域配置有一对焊盘、且在半导体晶片的表面粘贴有一张支承体而构成的层积体上，沿切割区域移动刀片，同时，进行切削，从半导体晶片的背面切削到支承体厚度方向的中途，在该层积体上形成切削槽，其具有如下特征。即，在半导体晶片表面上的切割区域两侧形成夹着该切割区域而相互对向的一对对准标记，并利用识别装置检测该一对对准标记的位置，基于该检测结果求出切割区域的中心线，使刀片位置对准该中心线，进行切削。
另外，本发明半导体装置的制造方法中，在所述制造方法的形成切削槽后的工序中，进一步利用识别装置检测一对对准标记的位置，并基于该检测结果求出切割区域的中心线，使刀片位置对准在该中心线上，从半导体晶片的背面开始进行切削，将层积体分离成各个半导体芯片。
所述本发明的制造方法对如下半导体装置适用，在半导体晶片的表面，仅在对应一对焊盘的位置开口形成窗口，以使该一对焊盘露出。
根据本发明，可使用一片支承体实现粘贴支承体构成的半导体装置。由此，可极大地降低半导体装置的厚度，抑制制造成本的提高。
另外，根据本发明，通过在半导体晶片的背面上设置在切削工序中可共通使用的对准标记，可高精度地进行半导体装置的切削工序。另外，可将由不同的切削工序产生的切削位置的误差抑制到极低。
附图说明
图1是说明本发明实施例的半导体装置制造方法的平面图；
图2是说明本发明实施例的半导体装置制造方法的剖面图；
图3是说明本发明实施例的半导体装置制造方法的剖面图；
图4是说明本发明实施例的半导体装置制造方法的剖面图；
图5是说明本发明实施例的半导体装置制造方法的剖面图；
图6是说明本发明实施例的半导体装置制造方法的剖面图；
图7是说明本发明实施例的半导体装置制造方法的剖面图；
图8是说明本发明实施例的半导体装置制造方法的剖面图；
图9是说明本发明实施例的半导体装置制造方法的剖面图；
图10是说明本发明实施例的半导体装置制造方法的剖面图；
图11是说明本发明实施例的半导体装置制造方法的剖面图；
图12是说明本发明实施例的半导体装置制造方法的平面图；
图13(a)、(b)是现有例的半导体装置概略结构的立体图；
图14是现有例的半导体装置结构的剖面图。
符号说明
10半导体晶片
10a、10b、10c、10d半导体芯片区域
12第一绝缘膜
14玻璃衬底
15树脂
16第二绝缘膜
17缓冲部件
18、18a、18b第二配线
8a、8b端部
19镀膜
20保护膜
21导电端子
30窗口
40切削槽
51a、51b、52a、52c对准标记
60切割区域
61、62中心线
具体实施方式
下面，参照图1的平面图说明本发明实施例的半导体装置的制造方法。
图1是从未粘合玻璃衬底的半导体晶片10的主面看到的、在配置了多个半导体芯片区域的半导体晶片10的一主面上粘贴未图示的支承体即玻璃衬底而构成的层积体的平面图。
如图1所示，沿正交的切割区域60配置有之后将半导体晶片10分离形成各半导体芯片的半导体芯片区域10a、10b、10c、10d及其它未图示的半导体芯片区域。在邻接的半导体芯片区域10a、10b上沿半导体晶片的切割区域上形成有从形成于各半导体芯片区域上的未图示的电路延伸的焊盘即第一配线13a、13b。另外，在半导体晶片上，通过进行例如选择性蚀刻，在存在第一配线13a、13b的位置开口形成窗口30，以使第一配线13a、13b可露出。该窗口30是用于连接第一配线13a、13b与之后形成于半导体晶片的半导体芯片区域10a、10b上的第二配线(用于连接第一配线和形成于半导体晶片上的导电端子的配线)的开口部。
另外，其它半导体芯片区域10c、10d及未图示的半导体芯片区域也具有与所述结构相同的结构。
而且，在半导体晶片的半导体芯片区域10a、10b、10c、10d及未图示的半导体芯片区域的角部，即正交的切割区域60的交叉点附近，分别形成对准标记(51a、51b)、(52a、52b)，其在半导体芯片区域和切割区域60的边界附近夹着切割区域60相对。这些对准标记(51a、51b)、(52a、52c)形成为例如突起状，在切削半导体晶片10或玻璃衬底的切削工序中，在使旋转刀片对准规定的切削位置的对位中使用。
所述旋转刀片的对位如下进行，利用图像识别用识别相机检测对准标记(51a、51b)、(52a、52c)，基于该检测结果求出切割区域60的中心线，使旋转刀片的位置与该中心线对准。
这些对准标记(51a、51b)、(52a、52c)被配置为例如如下所示的位置关系。即，夹着沿切割线即中心线61延伸的切割区域60，在半导体芯片区域10a、10b形成一对对准标记51a、51b。另外，夹着沿中心线62延伸的切割区域60，在半导体芯片区域10a、10c分别形成有一对对准标记52a、52c。换句话说，在切割区域60的交叉点形成有合计两对对准标记。
同样，在其它切割区域60的交叉点附近，在每个沿各中心线61、62延伸的区域60也分别夹着它们相对形成有一对对准标记，即，在每个切割区域60的交叉点分别形成有合计两对对准标记。
另外，在本实施例中，对准标记在切割区域60的各交叉点分别形成了两对，但本发明不限于此个数。即，例如在图1中，也可以夹着以中心线61为中心的切割区域60，在半导体芯片区域10c、10d形成一对对准标记(未图示)，夹着以中心线62为中心的切割区域60，在半导体芯片区域10b、10d形成一对对准标记(未图示)。由此，可谋求提高对准标记的识别精度。
另外，对准标记的材质只要是可被图像识别用识别相机检测的材质，则没有特别限定，但优选在半导体装置的制造工艺中通常使用的材料。例如，可以使用与第一配线和形成于半导体晶片上的配线等相同的材料。另外，对准标记也可以通过蚀刻等形成突起状或凹坑状。
所述本实施例的使用对准标记进行的旋转刀片的对位可适用于例如以下所示的半导体装置的制造方法。下面参照图2～图11的剖面图说明可适用本实施例的对准标记进行的旋转刀片的对位的半导体装置的制造方法。图2～图11表示图1的半导体晶片中涉及半导体芯片区域10a、10b和切割区域60的沿X-X线的剖面图。其它半导体芯片区域也具有与所述剖面图相同的结构。
首先，如图2所示，准备形成有未图示电路的半导体晶片10。在该半导体晶片10上的中心线61(切割区域的中心，即切割线)的两侧介由第一绝缘膜12形成有一对第一配线13a、13b(与所述未图示的电路电连接的配线)。另外，在含有第一配线13a、13b的半导体晶片10上形成有由氧化硅膜或氮化硅膜构成的钝化膜。
然后，对形成有第一配线13a、13b的一侧的半导体晶片的主面(以后称作半导体晶片10的表面)介由树脂15(例如环氧树脂)粘接作为支承体的玻璃衬底14。另外，支承体不限于玻璃衬底，也可以使用例如由金属或有机物构成的基板状支承体，或带状支承体。
然后，对未形成有第一配线13a、13b的一侧的半导体晶片的主面(即半导体晶片10的背面)进行背面研磨，将半导体晶片10的厚度减薄。在此，在研磨了背面的半导体晶片10的背面形成有之后形成于半导体晶片上的另一层或也可反映于配线的成膜的凹凸。因此，也可以对背面研磨了的半导体晶片10的背面进行湿式蚀刻。
然后，如图3所示，从其背面侧仅选择性蚀刻对应第一配线13a、13b的半导体晶片10的位置，形成使存在于第一配线13a、13b一部分上的第一绝缘膜12露出的开口部即窗口30。该窗口30是用于连接第一配线13a、13b和之后形成于半导体晶片10背面的第二配线的窗口。窗口30未沿切割区域60整体即中心线61整体形成，而仅形成于对应第一配线13a、13b的位置，因此，半导体晶片10和玻璃衬底14的接触面积增大。由此，可减少可能在其接触部产生的裂纹或剥离。因此，可抑制半导体装置的成品率的降低。
在此，在所述窗口30中的半导体晶片10的端部1a形成有角部。该角部使之后形成于半导体晶片10上的另一层或配线的分步敷层劣化。因此，如图4所示，要进行使所述角部变圆的湿式蚀刻(或浸渍蚀刻)。
然后，在半导体晶片10的背面上沿中心线61、62延伸的切割区域60的各交叉点附近形成用于所述旋转刀片的对位的对准标记51a、51b、52a、52c及其它对准标记(未图示)。
其次，如图5所示，在半导体晶片10的背面上形成第二绝缘膜16(例如以硅烷为基剂的3μm的氧化膜)。在此，所述对准标记虽然覆盖于第二绝缘膜16上，但在规定位置形成为突起状或凹坑状，故在第二绝缘膜16上，在所述规定位置也形成可被识别相机检测的突起或凹陷。
或，在利用金属层形成所述对准标记时，即使该对准标记被第二绝缘膜16覆盖，也可以在该第二绝缘膜16上形成反应所述金属层的突起，故可利用识别相机检测该对准标记。
其次，如图6所示，形成在窗口30的中心线61附近(在形成第一配线的其它区域中为中心线62)开口的未图示的抗蚀膜，以该抗蚀膜为掩模，从半导体晶片10的背面侧进行蚀刻。由此，除去位于中心线61附近的第二绝缘膜16及第一绝缘膜12的一部分，露出第一配线13a、13b的一部分。
然后，在除去未图示的抗蚀膜之后，如图7所示，在第二绝缘膜16上的规定位置形成缓冲部件17。该缓冲部件17是可吸收向之后形成于该规定位置的导电端子施加的力的部件，其具有缓和导电端子向印刷线路板接合时的应力的功能。
另外，在含有缓冲部件17上的第二绝缘膜16上形成第二配线18用的金属层。在此，第一配线13a、13b与第二配线18电连接。然后，对未图示的抗蚀膜进行构图，使窗口30的中心线61附近、第二配线18形成区域之外的半导体晶片10的区域开口，以该抗蚀膜为掩模，进行所示金属层的蚀刻，形成第二配线层18。另外，也可以对所述未图示的抗蚀膜进行构图，使其残留在对准标记的形成区域，以该抗蚀剂为掩模，进行第二配线层18用的金属层的蚀刻，形成由所述金属层构成的对准标记。
其次，在除去未图示的抗蚀膜之后，如图8所示，沿中心线61从半导体晶片10的背面进行切削，形成呈倒V字形状的断面形状直到玻璃衬底14一部分的切削槽40。此时，旋转刀片的宽度必须为不接触第一配线13a、13b端部的程度的宽度。另外，该切削槽40的断面形状不限于倒V字形状，也可以是其它形状(例如矩形)。
在进行所述切削时，在切削前利用识别相机检测(识别)对准标记的位置，基于其结果求出正确的中心线61的位置。然后，相对于求出的中心线61对准旋转刀片的位置，沿该中心线61移动该旋转刀片，同时进行切削。
沿中心线62的切削也同样进行。
在此，作为所述切削对象的正确的中心线61、62的位置分别基于一对对准标记(51a、51b)、(52a、52c)的位置的检测结果而决定。或，中心线61、62的位置基于一个切割区域60上的多对对准标记的位置的取平均值的检测结果而决定。然后，算出所述决定的中心线和旋转刀片的初期位置的偏移量，根据该偏移量修正该旋转刀片的位置。
在本工序中，在进行用于形成切削槽40的相对于中心线61的旋转刀片的对位时，识别对准标记，并根据该识别结果决定切削位置。在此，也可以通过识别例如与第一配线13a、13b电连接的第二配线18的相对的两端部，根据该识别结果决定切削位置。但是，在这种情况下，其被第二配线18端部的状况所左右。即，由于第二配线18的端部形成于窗口30的底部，故与普通的构图工序不同，有时构图形状的精度不高。因此，为了作为位置识别用标记使用，必须为更高精度的构图形状。与此相对，本发明的对准标记在通常的平坦位置构图形成，故其精度高，作为位置识别用标记可靠性高。
然后，如图9所示，对第二配线18进行镀敷处理，形成例如由Ni-Au构成的镀膜19。
其次，如图10所示，在包括切削槽40内的半导体晶片10的背面上形成保护膜20。在此，例如在使半导体晶片10的背面朝向上方后，通过进行有机树脂的旋转涂敷，在包括切削槽40内的半导体晶片10的整个背面进行该有机树脂的涂敷。由此，露出到切削槽40内的全部层即树脂15及玻璃衬底14的露出面由保护膜20覆盖。
然后，在半导体晶片10的背面形成在对应缓冲部件17的位置具有开口部的未图示的抗蚀膜。然后，通过以该抗蚀膜为掩模，进行蚀刻，除去保护膜20的一部分，进行开口，进而在保护膜20开口的位置形成导电端子21。
然后，沿作为切割区域60中心的中心线61进行切削，将半导体晶片10分离成各半导体芯片。在此，由于切削槽40内被保护膜20覆盖，故此时在进行切削时，仅切削玻璃衬底14及保护膜20即可。此时，旋转刀片的宽度必须为不接触切削槽40内的第一配线13a、13b及树脂15的程度的宽度。
在进行所述切削时，与切削切削槽40时相同，在进行切削之前利用识别相机检测(识别)对准标记的位置，并基于该结果求出正确的中心线61的位置。然后，使旋转刀片的位置与求出的中心线61对位，从半导体晶片的背面，沿该中心线61移动该旋转刀片并进行切削。沿中心线62的切削也是同样进行的。
在此，在假如不使用基于所述本实施例的对准标记的方法时，要可靠地进行所述切削工序(即，切削槽40的形成，及分离半导体晶片10时的切削)是极其困难的。
即，此时的旋转刀片的对位可考虑如下方法，例如从上面看形成于半导体晶片10上的窗口30内的图12的平面图所示，利用识别相机检测在切削槽40内露出的第二配线18a、18b的端部8a、8b的位置，根据该检测结果求出切割区域60的中心即中心线61，使旋转刀片的位置与该中心线61对位。但是，由于第二配线18a、18b的端部8a、8b通常往往因其形成时的加工构成破断面(断面上存在凹凸的状态的面)，故难于准确地检测位置。因此，产生如下问题，即根据端部8a、8b的位置求出的中心线61的位置不准确。
与此相对，切削工序使用了对准标记的本实施例的半导体装置的制造方法中，由于不依据第二配线18a、18b的端部8a、8b的位置，故与所述检测端部8a、8b的位置的方法相比，可可靠地进行旋转刀片的对位。由此，可提高对半导体晶片的切削精度。
另外，对切割区域60的多个不同的切削工序，即切削槽40的形成、及分离半导体晶片10时的切削两者中可共通使用同一对准标记。由此，如在上述本实施例的粘贴一片支承体构成的半导体装置的制造工艺中所见的，即使在需要进行对切割区域60的多个切削工序时，也可以将切削旋转刀片的对位偏差降至极低。因此，可提高对半导体晶片10的切削精度。
另外，根据所述本实施例的制造方法，可在抑制成品率劣化的同时，使用一片玻璃衬底实现粘贴支承体构成的半导体装置。另外，与使用两片玻璃衬底时相比，可将半导体装置的厚度和制造成本的增加控制得极低。
另外，在本实施例中，对使用了对准标记的旋转刀片的对位适用于粘贴一片玻璃衬底构成的半导体装置进行了说明，但本发明不限于此。即，如在半导体晶片的两个主面上粘贴两片玻璃衬底构成的半导体装置等只要是必须使第一配线露出的装置，则也可以适用于具有其它结构的半导体装置。

Claims (9)

1、一种半导体装置的制造方法，对沿划定于半导体晶片表面的切割区域配置一对焊盘、且在所述半导体晶片的表面粘贴支承体构成的层积体，使刀片沿所述切割区域移动，同时，从所述半导体晶片的背面进行切削，切削到支承体的厚度方向的中途，在该层积体上形成切削槽，其特征在于，在所述半导体晶片背面的所述切割区域的两侧形成夹着该切割区域而相互对向的一对对准标记，并利用识别装置检测该一对对准标记的位置，基于该检测结果求出切割区域的中心线，将刀片的位置对准在该中心线上进行切削。
2、如权利要求1所述的半导体装置的制造方法，其特征在于，在形成所述切削槽后的工序中，通过利用识别装置检测所述一对对准标记的位置，基于该检测结果求出所述切割区域的中心线，将刀片位置对准在该中心线上，从所述半导体晶片的背面进行切削，将所述层积体分离成各半导体芯片。
3、如权利要求1所述的半导体装置的制造方法，其特征在于，在所述半导体晶片的背面，仅在对应所述一对焊盘的位置开口形成窗口，以使该一对焊盘可露出。
4、如权利要求1、2、3中任一项所述的半导体装置的制造方法，其特征在于，所述对准标记由在半导体装置的制造工序中使用的材料形成。
5、如权利要求1、2、3中任一项所述的半导体装置的制造方法，其特征在于，所述对准标记是通过蚀刻形成的凹坑。
6、一种半导体装置，其特征在于，包括：焊盘，其沿划定于半导体芯片表面的切割区域配置；支承体，其粘贴于所述半导体芯片的表面；对准标记，其沿所述半导体芯片背面的所述切割区域形成。
7、如权利要求6所述的半导体装置，其特征在于，在所述半导体芯片的背面，仅在对应所述焊盘的位置形成使该半导体芯片开口的窗口。
8、如权利要求6或7所述的半导体装置，其特征在于，所述对准标记由半导体装置的制造工序中使用的材料形成。
9、如权利要求6或7所述的半导体装置，其特征在于，所述对准标记是通过蚀刻形成的凹坑。
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TWI288956B (en) 2007-10-21
JP2005252078A (ja) 2005-09-15
TW200535941A (en) 2005-11-01

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