CN1596466A - 通过在多孔材料上的sic∶h沉积提高金属阻挡性能 - Google Patents

通过在多孔材料上的sic∶h沉积提高金属阻挡性能 Download PDF

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Publication number
CN1596466A
CN1596466A CNA028132742A CN02813274A CN1596466A CN 1596466 A CN1596466 A CN 1596466A CN A028132742 A CNA028132742 A CN A028132742A CN 02813274 A CN02813274 A CN 02813274A CN 1596466 A CN1596466 A CN 1596466A
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CN
China
Prior art keywords
atomic percentage
percentage value
dielectric layer
atom
atomic
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Pending
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CNA028132742A
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English (en)
Chinese (zh)
Inventor
赫曼·玫宁
威廉·K.·韦德纳
弗朗西斯卡·亚科皮
斯蒂芬尼·玛尔霍特里
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Dow Silicones Corp
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Dow Corning Corp
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Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of CN1596466A publication Critical patent/CN1596466A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Laminated Bodies (AREA)
CNA028132742A 2001-07-02 2002-06-25 通过在多孔材料上的sic∶h沉积提高金属阻挡性能 Pending CN1596466A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30246901P 2001-07-02 2001-07-02
US60/302,469 2001-07-02

Publications (1)

Publication Number Publication Date
CN1596466A true CN1596466A (zh) 2005-03-16

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ID=23167846

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA028132742A Pending CN1596466A (zh) 2001-07-02 2002-06-25 通过在多孔材料上的sic∶h沉积提高金属阻挡性能

Country Status (5)

Country Link
US (1) US6541842B2 (https=)
JP (1) JP2004535065A (https=)
KR (1) KR100847926B1 (https=)
CN (1) CN1596466A (https=)
WO (1) WO2003005438A2 (https=)

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CN102047411A (zh) * 2008-06-17 2011-05-04 富士通株式会社 半导体装置及其制造方法
CN103943789A (zh) * 2014-04-18 2014-07-23 深圳市华星光电技术有限公司 Oled器件及其制备方法
JP2020145244A (ja) * 2019-03-05 2020-09-10 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102047411A (zh) * 2008-06-17 2011-05-04 富士通株式会社 半导体装置及其制造方法
US8461041B2 (en) 2008-06-17 2013-06-11 Fujitsu Limited Semiconductor device and method of manufacturing semiconductor device
CN102047411B (zh) * 2008-06-17 2015-08-05 富士通株式会社 半导体装置及其制造方法
CN103943789A (zh) * 2014-04-18 2014-07-23 深圳市华星光电技术有限公司 Oled器件及其制备方法
JP2020145244A (ja) * 2019-03-05 2020-09-10 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム

Also Published As

Publication number Publication date
US6541842B2 (en) 2003-04-01
KR20040032119A (ko) 2004-04-14
WO2003005438A3 (en) 2003-05-01
JP2004535065A (ja) 2004-11-18
WO2003005438A2 (en) 2003-01-16
US20030001282A1 (en) 2003-01-02
KR100847926B1 (ko) 2008-07-22

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