KR100847926B1 - 다공성 물질상의 ＳｉＣ:Ｈ 침착에 의해 개선된 금속 장벽거동 - Google Patents

다공성 물질상의 ＳｉＣ:Ｈ 침착에 의해 개선된 금속 장벽거동 Download PDF

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KR100847926B1
KR100847926B1 KR1020037017288A KR20037017288A KR100847926B1 KR 100847926 B1 KR100847926 B1 KR 100847926B1 KR 1020037017288 A KR1020037017288 A KR 1020037017288A KR 20037017288 A KR20037017288 A KR 20037017288A KR 100847926 B1 KR100847926 B1 KR 100847926B1
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atomic
dielectric layer
delete delete
sealing
metal
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KR20040032119A (ko
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메이넨헤르만
와이드너윌리암케네스
이아코피프란체스카
말휴트레스테판
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다우 코닝 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Laminated Bodies (AREA)
KR1020037017288A 2001-07-02 2002-06-25 다공성 물질상의 ＳｉＣ:Ｈ 침착에 의해 개선된 금속 장벽거동 Expired - Fee Related KR100847926B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US30246901P 2001-07-02 2001-07-02
US60/302,469 2001-07-02
PCT/US2002/020704 WO2003005438A2 (en) 2001-07-02 2002-06-25 Improved metal barrier behavior by sic:h deposition on porous materials

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Publication Number Publication Date
KR20040032119A KR20040032119A (ko) 2004-04-14
KR100847926B1 true KR100847926B1 (ko) 2008-07-22

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Country Link
US (1) US6541842B2 (https=)
JP (1) JP2004535065A (https=)
KR (1) KR100847926B1 (https=)
CN (1) CN1596466A (https=)
WO (1) WO2003005438A2 (https=)

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US6541842B2 (en) 2003-04-01
KR20040032119A (ko) 2004-04-14
WO2003005438A3 (en) 2003-05-01
JP2004535065A (ja) 2004-11-18
WO2003005438A2 (en) 2003-01-16
US20030001282A1 (en) 2003-01-02
CN1596466A (zh) 2005-03-16

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St.27 status event code: A-5-5-R10-R18-oth-X000

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St.27 status event code: A-4-4-P10-P22-nap-X000