CN1595611A - 半导体器件的制造方法 - Google Patents
半导体器件的制造方法 Download PDFInfo
- Publication number
- CN1595611A CN1595611A CN200410085156.0A CN200410085156A CN1595611A CN 1595611 A CN1595611 A CN 1595611A CN 200410085156 A CN200410085156 A CN 200410085156A CN 1595611 A CN1595611 A CN 1595611A
- Authority
- CN
- China
- Prior art keywords
- monitoring
- semiconductor device
- wafer
- mentioned
- main body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (15)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP316589/03 | 2003-09-09 | ||
JP316590/03 | 2003-09-09 | ||
JP2003316588 | 2003-09-09 | ||
JP2003316591 | 2003-09-09 | ||
JP316591/2003 | 2003-09-09 | ||
JP316589/2003 | 2003-09-09 | ||
JP2003316590 | 2003-09-09 | ||
JP316591/03 | 2003-09-09 | ||
JP316590/2003 | 2003-09-09 | ||
JP316588/03 | 2003-09-09 | ||
JP2003316589 | 2003-09-09 | ||
JP316588/2003 | 2003-09-09 | ||
JP259655/2004 | 2004-09-07 | ||
JP2004259655A JP4880890B2 (ja) | 2003-09-09 | 2004-09-07 | 半導体装置の製造方法 |
JP259655/04 | 2004-09-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1595611A true CN1595611A (zh) | 2005-03-16 |
CN100399498C CN100399498C (zh) | 2008-07-02 |
Family
ID=34557747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100851560A Expired - Fee Related CN100399498C (zh) | 2003-09-09 | 2004-09-09 | 半导体器件的制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7043328B2 (zh) |
JP (1) | JP4880890B2 (zh) |
CN (1) | CN100399498C (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007335677A (ja) * | 2006-06-15 | 2007-12-27 | Furukawa Electric Co Ltd:The | Iii族窒化物半導体を用いたノーマリオフ型電界効果トランジスタ及びその製造方法 |
US11295954B2 (en) * | 2016-07-04 | 2022-04-05 | Mitsubishi Electric Corporation | Manufacturing method for a semiconductor device including a polysilicon resistor |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60200301A (ja) * | 1984-03-26 | 1985-10-09 | Hitachi Ltd | 半導体製造プロセス制御システム |
CN1035916A (zh) * | 1988-02-15 | 1989-09-27 | 金星半导体株式会社 | 用干法刻蚀多晶硅的局部氧化硅法 |
JP2983855B2 (ja) * | 1994-10-31 | 1999-11-29 | 三洋電機株式会社 | 測長用モニター |
JPH08264400A (ja) * | 1995-03-28 | 1996-10-11 | Mitsubishi Electric Corp | シリコン単結晶ウェハおよびその表面の熱酸化方法 |
JPH1084025A (ja) * | 1996-09-06 | 1998-03-31 | Toshiba Corp | トンネル絶縁膜の膜質評価方法および半導体装置のスクリーニング方法 |
US5773315A (en) * | 1996-10-28 | 1998-06-30 | Advanced Micro Devices, Inc. | Product wafer yield prediction method employing a unit cell approach |
JPH10163080A (ja) * | 1996-11-27 | 1998-06-19 | Matsushita Electron Corp | 半導体製造システム |
JP2000164476A (ja) * | 1998-11-26 | 2000-06-16 | Mitsubishi Electric Corp | 半導体製造工程の管理方法、半導体製造装置の管理方法、及び半導体製造環境の管理方法 |
TW429497B (en) * | 1999-03-02 | 2001-04-11 | United Microelectronics Corp | Method of monitoring in-line temperature |
JP3381693B2 (ja) * | 1999-12-17 | 2003-03-04 | 日本電気株式会社 | 半導体装置の製造方法 |
US6485990B1 (en) * | 2000-01-04 | 2002-11-26 | Advanced Micro Devices, Inc. | Feed-forward control of an etch processing tool |
JP2001196580A (ja) * | 2000-01-12 | 2001-07-19 | Kmt Semiconductor Ltd | 電界効果トランジスタの製造方法 |
JP2001308317A (ja) * | 2000-04-18 | 2001-11-02 | Nec Corp | 半導体装置の製造方法 |
JP2001332723A (ja) * | 2000-05-19 | 2001-11-30 | Nec Corp | 半導体装置の製造方法 |
JP2002083958A (ja) * | 2000-09-08 | 2002-03-22 | Sony Corp | イオン注入条件の設定方法および半導体装置の製造方法 |
JP2002118083A (ja) * | 2000-10-05 | 2002-04-19 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
KR100374301B1 (ko) * | 2001-03-24 | 2003-03-03 | 동부전자 주식회사 | 섀로우 트랜치 분리막 제조 방법 |
US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
US6958249B1 (en) * | 2002-02-12 | 2005-10-25 | Taiwan Semiconductor Manufacturing Company | Method to monitor process charging effect |
CN100389489C (zh) * | 2003-12-30 | 2008-05-21 | 中芯国际集成电路制造(上海)有限公司 | 利用注入晶片的注入机的低能量剂量监测 |
-
2004
- 2004-09-07 JP JP2004259655A patent/JP4880890B2/ja not_active Expired - Fee Related
- 2004-09-08 US US10/936,736 patent/US7043328B2/en active Active
- 2004-09-09 CN CNB2004100851560A patent/CN100399498C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050124082A1 (en) | 2005-06-09 |
US7043328B2 (en) | 2006-05-09 |
JP2005109456A (ja) | 2005-04-21 |
CN100399498C (zh) | 2008-07-02 |
JP4880890B2 (ja) | 2012-02-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1595608A (zh) | 半导体器件的制造方法 | |
CN1291500C (zh) | 半导体器件及其制备方法 | |
CN100336228C (zh) | 半导体器件 | |
CN1297011C (zh) | 半导体装置及其制造方法 | |
CN1246909C (zh) | 半导体器件及其制造方法 | |
CN1269224C (zh) | 半导体装置 | |
CN1210780C (zh) | 槽型元件分离结构 | |
CN1205664C (zh) | 半导体装置及其制造方法 | |
CN1617353A (zh) | 半导体器件的制造方法 | |
CN1788354A (zh) | 半导体装置及其制造方法 | |
CN1384547A (zh) | 半导体器件及其制造方法 | |
CN1866541A (zh) | 场效应晶体管和制造场效应晶体管的方法 | |
CN1303698C (zh) | 半导体器件及其制造方法 | |
CN1449585A (zh) | 半导体器件及其制造方法 | |
CN1192051A (zh) | 半导体器件及其制造方法 | |
CN101030556A (zh) | 半导体器件的制造方法 | |
CN1701442A (zh) | 半导体装置及其制造方法 | |
CN1794451A (zh) | 半导体装置及其制造方法 | |
CN1897278A (zh) | 半导体器件及其制造方法 | |
CN1838433A (zh) | 半导体器件以及图像显示装置 | |
CN1828901A (zh) | 半导体大规模集成电路及半导体大规模集成电路制造方法 | |
CN1421914A (zh) | 半导体装置及其制造方法 | |
CN1909243A (zh) | 半导体装置及其制造方法 | |
CN1171314C (zh) | 半导体装置及半导体装置的制造方法 | |
CN1110073C (zh) | 半导体集成电路的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160311 Address after: Chiba County, Japan Patentee after: SEIKO INSTR INC Address before: Chiba County, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: EPPs Lingke Co. Ltd. Address before: Chiba County, Japan Patentee before: SEIKO INSTR INC |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080702 Termination date: 20200909 |