CN1592959A - 在乏硅环境下使用等离子增强化学气相沉积制程的金属栅极的氮氧间隔体的形成方法 - Google Patents
在乏硅环境下使用等离子增强化学气相沉积制程的金属栅极的氮氧间隔体的形成方法 Download PDFInfo
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- CN1592959A CN1592959A CNA02823443XA CN02823443A CN1592959A CN 1592959 A CN1592959 A CN 1592959A CN A02823443X A CNA02823443X A CN A02823443XA CN 02823443 A CN02823443 A CN 02823443A CN 1592959 A CN1592959 A CN 1592959A
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- gate electrode
- metal gate
- silicon
- silicon oxynitride
- metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/994,128 US6509282B1 (en) | 2001-11-26 | 2001-11-26 | Silicon-starved PECVD method for metal gate electrode dielectric spacer |
US09/994,128 | 2001-11-26 |
Publications (2)
Publication Number | Publication Date |
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CN1592959A true CN1592959A (zh) | 2005-03-09 |
CN100355043C CN100355043C (zh) | 2007-12-12 |
Family
ID=25540311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB02823443XA Expired - Fee Related CN100355043C (zh) | 2001-11-26 | 2002-10-11 | 具有金属栅极电极的半导体装置及其制程 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6509282B1 (zh) |
EP (1) | EP1449243A1 (zh) |
JP (1) | JP2005510872A (zh) |
KR (1) | KR100891367B1 (zh) |
CN (1) | CN100355043C (zh) |
AU (1) | AU2002347877A1 (zh) |
WO (1) | WO2003046971A1 (zh) |
Cited By (2)
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CN111540673A (zh) * | 2020-07-07 | 2020-08-14 | 中芯集成电路制造(绍兴)有限公司 | 半导体器件的形成方法 |
US11223289B2 (en) | 2020-01-17 | 2022-01-11 | Astec International Limited | Regulated switched mode power supplies having adjustable output voltages |
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US20040212025A1 (en) * | 2003-04-28 | 2004-10-28 | Wilman Tsai | High k oxide |
JP4511307B2 (ja) | 2004-02-10 | 2010-07-28 | セイコーエプソン株式会社 | ゲート絶縁膜、半導体素子、電子デバイスおよび電子機器 |
US7102191B2 (en) * | 2004-03-24 | 2006-09-05 | Micron Technologies, Inc. | Memory device with high dielectric constant gate dielectrics and metal floating gates |
JP4876375B2 (ja) * | 2004-07-06 | 2012-02-15 | ソニー株式会社 | 半導体装置およびその製造方法 |
US7332439B2 (en) * | 2004-09-29 | 2008-02-19 | Intel Corporation | Metal gate transistors with epitaxial source and drain regions |
KR100688575B1 (ko) * | 2004-10-08 | 2007-03-02 | 삼성전자주식회사 | 비휘발성 반도체 메모리 소자 |
US20060094194A1 (en) * | 2004-11-04 | 2006-05-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Advanced disposable spacer process by low-temperature high-stress nitride film for sub-90NM CMOS technology |
US7732923B2 (en) * | 2004-12-30 | 2010-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Impurity doped UV protection layer |
KR100771808B1 (ko) * | 2006-07-05 | 2007-10-30 | 주식회사 하이닉스반도체 | Sonos 구조를 갖는 플래시 메모리 소자 및 그것의제조 방법 |
KR100819706B1 (ko) * | 2006-12-27 | 2008-04-04 | 동부일렉트로닉스 주식회사 | 씨모스 이미지센서 및 그 제조방법 |
DE202007001431U1 (de) * | 2007-01-31 | 2007-05-16 | Infineon Technologies Austria Ag | Halbleiteranordnung und Leistungshalbleiterbauelement |
JP5358893B2 (ja) * | 2007-04-03 | 2013-12-04 | 三菱電機株式会社 | トランジスタ |
US20080246099A1 (en) * | 2007-04-09 | 2008-10-09 | Ajith Varghese | Low temperature poly oxide processes for high-k/metal gate flow |
CN102157360B (zh) * | 2010-02-11 | 2012-12-12 | 中芯国际集成电路制造(上海)有限公司 | 一种栅极制造方法 |
US8936965B2 (en) * | 2010-11-26 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8822283B2 (en) | 2011-09-02 | 2014-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned insulated film for high-k metal gate device |
WO2014129519A1 (en) | 2013-02-20 | 2014-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method, semiconductor device, and peeling apparatus |
US9799829B2 (en) | 2014-07-25 | 2017-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, light-emitting device, module, and electronic device |
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-
2001
- 2001-11-26 US US09/994,128 patent/US6509282B1/en not_active Expired - Fee Related
-
2002
- 2002-09-18 US US10/246,267 patent/US6605848B2/en not_active Expired - Lifetime
- 2002-10-11 CN CNB02823443XA patent/CN100355043C/zh not_active Expired - Fee Related
- 2002-10-11 WO PCT/US2002/032582 patent/WO2003046971A1/en active Application Filing
- 2002-10-11 EP EP02784088A patent/EP1449243A1/en not_active Withdrawn
- 2002-10-11 KR KR1020047007987A patent/KR100891367B1/ko not_active IP Right Cessation
- 2002-10-11 JP JP2003548295A patent/JP2005510872A/ja active Pending
- 2002-10-11 AU AU2002347877A patent/AU2002347877A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11223289B2 (en) | 2020-01-17 | 2022-01-11 | Astec International Limited | Regulated switched mode power supplies having adjustable output voltages |
CN111540673A (zh) * | 2020-07-07 | 2020-08-14 | 中芯集成电路制造(绍兴)有限公司 | 半导体器件的形成方法 |
CN111540673B (zh) * | 2020-07-07 | 2020-10-16 | 中芯集成电路制造(绍兴)有限公司 | 半导体器件的形成方法 |
Also Published As
Publication number | Publication date |
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KR20040060991A (ko) | 2004-07-06 |
US6605848B2 (en) | 2003-08-12 |
JP2005510872A (ja) | 2005-04-21 |
KR100891367B1 (ko) | 2009-04-02 |
WO2003046971A1 (en) | 2003-06-05 |
AU2002347877A1 (en) | 2003-06-10 |
CN100355043C (zh) | 2007-12-12 |
US6509282B1 (en) | 2003-01-21 |
EP1449243A1 (en) | 2004-08-25 |
US20030098487A1 (en) | 2003-05-29 |
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