CN1592750A - 六(单烃基氨基)乙硅烷及其制备方法 - Google Patents
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Abstract
本发明要解决的问题是提供不含氯的硅烷化合物,该化合物在氮化硅膜和氧氮化硅膜的情况下提供了优异的低温成膜特性和也具有优异的处理特性。本发明还提供制备这些硅烷化合物的方法。解决方案是,本发明提供具有通式(I) ((R)HN) 3-Si-Si-(NH(R)) 3的六(单烃基氨基)乙硅烷,其中每个R独立地表示C1-C4烃基。这些乙硅烷化合物可以通过使六氯乙硅烷在有机溶剂中与至少6倍摩尔量的单烃基胺RNH2反应(其中R是C1-C4烃基)来制备。
Description
本发明涉及乙硅烷化合物及其制备方法。更具体地说,本发明涉及六(单烃基氨基)乙硅烷及其制备方法。
现有技术的描述
硅烷化合物例如甲硅烷化合物和乙硅烷化合物用于各种应用中。在半导体领域中,硅烷化合物通常在通过化学气相沉积(CVD)生产诸如氮化硅、氧化硅或氧氮化硅的硅型介电膜中用作原料。更具体地说,硅烷化合物可以通过与含氮反应气体例如氨反应来生产氮化硅,通过与含氧气体例如氧气反应来生产氧化硅,和通过与含氮气体和含氧气体反应来生产氧氮化硅。
目前,通过CVD生产氮化硅膜的标准方法包括氨气体与二氯硅烷(=硅烷化合物)之间的反应;但是,该反应产生了作为副产物的氯化铵。氯化铵是白色固体,并以这种形式聚集,堵塞了CVD反应装置的排料管线。所以,需要一种其中原料是不含氯的硅烷化合物的CVD方法。还希望通过CVD技术在氮化硅生产过程中获得在低温(≤600℃)下的良好膜沉积速率。
四(二甲基氨基)硅烷和四(二乙基氨基)硅烷已经作为不含氯的硅烷化合物经过检验,但这些氨基硅烷化合物的问题在于提供了慢的低温膜沉积速率。
不含氯的烷基氨基乙硅烷也是已知的。这些烷基氨基乙硅烷化合物在环境温度下是固体。例如,报道了六(二甲基氨基)乙硅烷在减压下在230℃下升华。在环境温度下为固体的化合物具有差的处理性能。
本发明要解决的问题
所以,本发明的目的是提供新的不含氯的硅烷化合物,该化合物在氮化硅膜等的情况提供了优异的低温膜沉积特性和也具有优异的处理特性。本发明的另一个方面提供制备这些新硅烷化合物的方法。
解决方案
本发明的第一方面提供具有通式(I)的六(单烃基氨基)乙硅烷:
((R)HN)3-Si-Si-(NH(R))3 (I)
其中每个R独立地表示C1-C4烃基。
本发明的第二方面提供一种制备六(单烃基氨基)乙硅烷(I)的方法,所述方法的特征在于使六氯乙硅烷在有机溶剂中与至少6倍摩尔量的单烃基胺RNH2反应(其中R是C1-C4烃基)。
本发明的实施方案
下面将详细描述本发明。
本发明的化合物是通式(I)的六(单烃基氨基)乙硅烷:
((R)HN)3-Si-Si-(NH(R))3 (I)
在(I)中的每个R选自C1-C4烃基。C1-C4烃基包括乙烯基和C1-C4烷基,例如甲基、乙基、丙基、异丙基、丁基和叔丁基。在(I)中的6个R基团可以都是相同的或可以彼此不同。考虑到制备的容易性,这6个R基团优选是相同的,和在本发明的上下文中,所有R基团优选是乙基。因此,六(单乙基氨基)乙硅烷是根据本发明的优选乙硅烷。
式(I)的乙硅烷可以通过使六氯乙硅烷(Cl3-Si-Si-Cl3)在有机溶剂中与至少6倍摩尔量的单烃基胺RNH2(R=C1-C4烃基)反应来合成。用于与六氯乙硅烷反应的单烃基胺特别包括甲胺、乙胺、丙胺、异丙胺、叔丁胺和乙烯胺。所用的单烃基胺可以是一种单烃基胺或多种单烃基胺的混合物。但是,从制备的容易性考虑,优选使用一种单烃基胺,甚至更优选使用乙胺。
如上所述,六氯乙硅烷和单烃基胺彼此反应,以1摩尔前者计使用至少6摩尔的后者。但是,为了抑制N-烃基二硅氮烷的产生,相对于六氯乙硅烷而言使用大量过量的单烃基胺是优选的。更具体地说,优选使用的六氯乙硅烷:单烃基胺的摩尔比是1∶12至1∶36。以1摩尔六氯乙硅烷计使用至少12摩尔的单烃基胺能使得以氯化单烃基铵(固体)的形式捕获在该反应中作为副产物产生的氯化氢(6摩尔)。这种氯化单烃基铵可以容易地从反应混合物中通过过滤而除去。
有机溶剂用作六氯乙硅烷和单烃基胺反应的反应溶剂。有机溶剂包括四氢呋喃和直链和环状烃,例如戊烷、己烷和辛烷。戊烷是优选的溶剂。
六氯乙硅烷和单烃基胺之间的反应优选在-30至+50℃的温度下进行。一般来说,该反应将如下进行:先使反应溶剂达到在优选范围-30至+50℃内的温度,将单烃基胺加入/溶解在反应溶剂中,然后逐步加入六氯乙硅烷,例如滴加。六氯乙硅烷可以以纯的形式或溶解在与反应溶剂相同的溶剂中的形式滴加。该反应随后进行2-24小时,同时搅拌反应溶剂并保持上述温度。在搅拌之后,将反应溶剂加热到室温(约20-50℃),搅拌优选继续再进行至少10小时。作为固体副产物的氯化烃基铵然后过滤出来,残余的胺通过真空蒸馏出来。所得的六(单烃基氨基)乙硅烷可以通过分馏进行额外的提纯。
根据本发明的六(单烃基氨基)乙硅烷在环境温度(约20-50℃)下是液体,不含氯,是高度反应性的,且支持优异的低温(不超过600℃)下的氮化硅和氧氮化硅膜沉积速率。它们的高反应性来源于单烃基氨基与硅之间的键合和弱的Si-Si直接键。
所以,根据上述性能,本发明的六(单烃基氨基)乙硅烷可以在半导体领域中在通过热CVD法制备作为介电膜的氮化硅和氧氮化硅的过程中用作原料(前体)。
例如,氮化硅膜可以如下形成在半导体基材上:将至少一个半导体基材加入反应室中,向其中加入本发明的六(单烃基氨基)乙硅烷和含氮气体(例如氨、肼、烷基肼化合物,或氮化氢),并通过加热开始六(单烃基氨基)乙硅烷和含氮气体之间的反应。
含氧气体(例如NO、N2O、NO2、O2、O3、H2O、H2O2)当然也可以加入反应室中,在这种情况下将通过六(单烃基氨基)乙硅烷、含氮气体和含氧气体之间的反应而在半导体基材上形成氧氮化硅膜。
实施例
下面通过工作实施例更详细地说明本发明,但是本发明不限于这些工作实施例。
实施例1
六(单乙基氨基)乙硅烷(HEAD)的合成
戊烷用作反应溶剂,并冷却到0℃用于反应。通过将冷却到0℃的乙胺(70g,1.55mol)加入到冷戊烷中来制备乙胺溶液。将六氯乙硅烷(26.9g,0.1mol)滴加到该乙胺溶液中。所得的反应溶液然后于0℃搅拌2小时,然后于室温(20℃)再搅拌15小时。过滤出氯化乙铵副产物,真空蒸馏出戊烷和乙胺。获得22.4g的HEAD(产率=70%)。
分析结果:
1H-NMR(C6D6,500MHz):δ=0.61ppm(宽,-NH),δ=1.1ppm(三重峰,-CH3),δ=2.95ppm(五重峰,-CH2);
13C-NMR(C6D6,125MHz):20.7ppm和36.1ppm(-CH2-CH3)。
在这些NMR分析中没有发现归属于SiH键的信号。
图1报道了QMS(m/e<250)的分析结果(光谱)(在图1中,Et=乙基)。虽然Si-Si键存在于许多片断中,但是为了简化,只给出了主要峰的归属。
合成的HEAD产物的氯含量通过离子色谱测定不大于痕量水平。HEAD产物的熔点估计是约10℃。
实施例2
使用HEAD生产氮化硅膜
该实施例使用实施例1中合成的HEAD。各种气体在下面给出的条件下引入到装有硅基材的反应室中。通过在下面给出的反应温度下进行CVD反应而在硅基材上形成氮化硅膜。HEAD在气化室中气化,同时与氮气混合。
气态HEAD的流速:5sccm
氨气体流速:50sccm
载气(氮气)流速:60sccm
反应室内的压力:0.5托
反应室温度:550℃
结果,在约45分钟内获得厚度为900埃的氮化硅膜(氮化硅膜沉积速率=20埃/分钟)。根据Auger电子能谱分析,该氮化硅膜的组成是Si1.5N1。
实施例3
使用HEAD生产氧氮化硅膜
该实施例使用实施例1中合成的HEAD。各种气体在下面给出的条件下引入到装有硅基材的反应室中。通过在下面给出的反应温度下进行CVD反应而在硅基材上形成氧氮化硅膜。HEAD在气化室中气化,同时与氮气混合。
气态HEAD的流速:2sccm
氨气体流速:50sccm
氧气流速:1sccm
载气(氮气)流速:60sccm
反应室内的压力:0.5托
反应室温度:550℃
结果,在约100分钟内获得厚度为约2000埃的氧氮化硅膜(氧氮化硅膜沉积速率=20埃/分钟)。根据Auger电子能谱分析,该氧氮化硅膜的组成是SiN0.42O0.35。
本发明的有利效果
如上所述,本发明提供了不含氯的硅烷化合物,在氮化硅膜和氧氮化硅膜的情况下,这些硅烷化合物提供了优异的低温膜沉积特性,也具有优异的处理特性。本发明还提供了这些硅烷化合物的制备方法。本发明的六(单烃基氨基)乙硅烷在半导体领域中在通过热CVD法形成用作介电膜的氮化硅膜和氧氮化膜中是特别有用的。
附图简述
图1是实施例1中合成的六(单乙基氨基)乙硅烷的质谱。
Claims (7)
1、具有通式(I)的六(单烃基氨基)乙硅烷:
((R)HN)3-Si-Si-(NH(R))3 (I)
其中每个R独立地表示C1-C4烃基。
2、根据权利要求1的化合物,其特征在于每个R是乙基。
3、一种制备具有通式(I)的六(单烃基氨基)乙硅烷的方法,
((R)HN)3-Si-Si-(NH(R))3 (I)
其中每个R独立地表示C1-C4烃基,
所述方法的特征在于使六氯乙硅烷在有机溶剂中与至少6倍摩尔量的单烃基胺RNH2反应(其中R是C1-C4烃基)。
4、根据权利要求3的制备方法,其特征在于该反应在-30至+50℃的温度下进行。
5、根据权利要求3或4的制备方法,其特征在于有机溶剂是戊烷。
6、根据权利要求3-5中任一项的制备方法,其特征在于单烃基胺是乙胺。
7、根据权利要求3-6中任一项的制备方法,其特征在于将纯的或溶解在有机溶剂中的六氯乙硅烷逐步加入到单烃基胺在有机溶剂中的溶液中。
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Family Cites Families (2)
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US7446217B2 (en) | 2002-11-14 | 2008-11-04 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films |
JP4403824B2 (ja) | 2003-05-26 | 2010-01-27 | 東京エレクトロン株式会社 | シリコン窒化膜の成膜方法 |
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- 2002-11-27 DE DE60211216T patent/DE60211216T2/de not_active Expired - Lifetime
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102307883A (zh) * | 2009-02-23 | 2012-01-04 | 瓦克化学股份公司 | 生产和稳定氨基硅烷低聚物的方法 |
CN102307883B (zh) * | 2009-02-23 | 2014-07-16 | 瓦克化学股份公司 | 生产和稳定氨基硅烷低聚物的方法 |
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US20060030724A1 (en) | 2006-02-09 |
DE60211216D1 (de) | 2006-06-08 |
TWI323262B (en) | 2010-04-11 |
KR20040058348A (ko) | 2004-07-03 |
EP1458730B1 (en) | 2006-05-03 |
CN100335487C (zh) | 2007-09-05 |
US20050107627A1 (en) | 2005-05-19 |
AU2002361979A1 (en) | 2003-06-10 |
JP4116283B2 (ja) | 2008-07-09 |
DE60211216T2 (de) | 2007-01-25 |
US7019159B2 (en) | 2006-03-28 |
US7064083B2 (en) | 2006-06-20 |
ATE325127T1 (de) | 2006-06-15 |
TW200306316A (en) | 2003-11-16 |
JP2003171383A (ja) | 2003-06-20 |
KR100894596B1 (ko) | 2009-04-24 |
WO2003045959A1 (en) | 2003-06-05 |
EP1458730A1 (en) | 2004-09-22 |
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