CN1591692A - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN1591692A CN1591692A CNA2004100686633A CN200410068663A CN1591692A CN 1591692 A CN1591692 A CN 1591692A CN A2004100686633 A CNA2004100686633 A CN A2004100686633A CN 200410068663 A CN200410068663 A CN 200410068663A CN 1591692 A CN1591692 A CN 1591692A
- Authority
- CN
- China
- Prior art keywords
- bit line
- mentioned
- semiconductor storage
- load resistance
- memory element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP311865/03 | 2003-09-03 | ||
JP311865/2003 | 2003-09-03 | ||
JP2003311865A JP4278140B2 (ja) | 2003-09-03 | 2003-09-03 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1591692A true CN1591692A (zh) | 2005-03-09 |
CN1591692B CN1591692B (zh) | 2013-06-12 |
Family
ID=34131849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004100686633A Active CN1591692B (zh) | 2003-09-03 | 2004-09-03 | 半导体存储装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7283391B2 (zh) |
EP (1) | EP1513161A3 (zh) |
JP (1) | JP4278140B2 (zh) |
KR (1) | KR100628349B1 (zh) |
CN (1) | CN1591692B (zh) |
TW (1) | TWI251835B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102005248A (zh) * | 2009-08-31 | 2011-04-06 | 三星电子株式会社 | 非易失性存储器件及其驱动方法和具有其的存储器系统 |
CN103403807A (zh) * | 2011-06-16 | 2013-11-20 | 株式会社东芝 | 包括可变电阻元件的非易失性半导体存储器设备 |
CN105938722A (zh) * | 2015-03-04 | 2016-09-14 | 爱思开海力士有限公司 | 可变电阻存储器件及操作其的方法 |
CN106128502A (zh) * | 2015-05-06 | 2016-11-16 | 爱思开海力士有限公司 | 电子设备及其操作方法 |
CN110718257A (zh) * | 2018-07-11 | 2020-01-21 | 西安格易安创集成电路有限公司 | 一种电压偏置电路及方法 |
CN111951874A (zh) * | 2019-05-14 | 2020-11-17 | 北京兆易创新科技股份有限公司 | 一种校验的方法和装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101258983B1 (ko) * | 2006-09-19 | 2013-04-29 | 삼성전자주식회사 | 가변저항 소자를 이용한 반도체 메모리 장치 및 그 동작방법 |
JP4504397B2 (ja) * | 2007-05-29 | 2010-07-14 | 株式会社東芝 | 半導体記憶装置 |
JP4280302B2 (ja) * | 2007-06-22 | 2009-06-17 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置 |
KR101019895B1 (ko) * | 2009-06-23 | 2011-03-04 | 주식회사 하이닉스반도체 | 반도체 메모리 어레이 및 이를 포함하는 반도체 메모리 소자 |
US8456930B2 (en) | 2010-10-07 | 2013-06-04 | Hynix Semiconductor Inc. | Variable resistance memory device having equal resistances between signal paths regardless of location of memory cells within the memory array |
JP2012089747A (ja) | 2010-10-21 | 2012-05-10 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8976581B2 (en) * | 2013-03-13 | 2015-03-10 | Macronix International Co., Ltd. | Non-volatile memory capable of programming cells by hot carrier injection based on a threshold voltage of a control cell |
KR102313601B1 (ko) | 2017-03-24 | 2021-10-15 | 삼성전자주식회사 | 메모리 장치의 동작 방법 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5258635A (en) * | 1988-09-06 | 1993-11-02 | Kabushiki Kaisha Toshiba | MOS-type semiconductor integrated circuit device |
JP3083547B2 (ja) * | 1990-07-12 | 2000-09-04 | 株式会社日立製作所 | 半導体集積回路装置 |
JP2642520B2 (ja) * | 1991-02-01 | 1997-08-20 | シャープ株式会社 | 半導体読出し専用メモリ |
JP2851962B2 (ja) * | 1992-01-21 | 1999-01-27 | シャープ株式会社 | 半導体読み出し専用メモリ |
US5557124A (en) * | 1994-03-11 | 1996-09-17 | Waferscale Integration, Inc. | Flash EEPROM and EPROM arrays with select transistors within the bit line pitch |
JPH08153391A (ja) * | 1994-11-29 | 1996-06-11 | Fujitsu Ltd | ダイナミックram |
JP3169788B2 (ja) * | 1995-02-17 | 2001-05-28 | 日本電気株式会社 | 半導体記憶装置 |
JPH08263985A (ja) * | 1995-03-24 | 1996-10-11 | Nec Corp | 半導体記憶装置 |
JP3380107B2 (ja) | 1996-03-22 | 2003-02-24 | シャープ株式会社 | 半導体記憶装置 |
US5679591A (en) * | 1996-12-16 | 1997-10-21 | Taiwan Semiconductor Manufacturing Company, Ltd | Method of making raised-bitline contactless trenched flash memory cell |
US5798966A (en) * | 1997-03-31 | 1998-08-25 | Intel Corporation | Flash memory VDS compensation techiques to reduce programming variability |
JP3990485B2 (ja) * | 1997-12-26 | 2007-10-10 | 株式会社ルネサステクノロジ | 半導体不揮発性記憶装置 |
KR100716074B1 (ko) * | 1999-06-17 | 2007-05-08 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 기억 장치 및 그 제조 방법 |
US6175519B1 (en) | 1999-07-22 | 2001-01-16 | Macronix International Co., Ltd. | Virtual ground EPROM structure |
JP4212760B2 (ja) * | 2000-06-02 | 2009-01-21 | 富士通マイクロエレクトロニクス株式会社 | 半導体記憶装置 |
US6594176B2 (en) * | 2001-01-24 | 2003-07-15 | Infineon Technologies Ag | Current source and drain arrangement for magnetoresistive memories (MRAMs) |
US6480438B1 (en) * | 2001-06-12 | 2002-11-12 | Ovonyx, Inc. | Providing equal cell programming conditions across a large and high density array of phase-change memory cells |
US6826080B2 (en) * | 2002-05-24 | 2004-11-30 | Nexflash Technologies, Inc. | Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure therefor |
JP2004158119A (ja) * | 2002-11-06 | 2004-06-03 | Sharp Corp | 不揮発性半導体記憶装置 |
DE60323202D1 (de) * | 2003-02-21 | 2008-10-09 | St Microelectronics Srl | Phasenwechselspeicheranordnung |
KR100506457B1 (ko) * | 2003-07-30 | 2005-08-05 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 메모리 셀 어레이 블럭 및 그 메모리셀 어레이 블럭을 이용하는 불휘발성 강유전체 메모리 장치 |
-
2003
- 2003-09-03 JP JP2003311865A patent/JP4278140B2/ja not_active Expired - Fee Related
-
2004
- 2004-08-31 EP EP04255263A patent/EP1513161A3/en not_active Withdrawn
- 2004-09-02 TW TW093126537A patent/TWI251835B/zh active
- 2004-09-03 KR KR1020040070422A patent/KR100628349B1/ko active IP Right Grant
- 2004-09-03 CN CN2004100686633A patent/CN1591692B/zh active Active
- 2004-09-03 US US10/934,212 patent/US7283391B2/en active Active
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102005248A (zh) * | 2009-08-31 | 2011-04-06 | 三星电子株式会社 | 非易失性存储器件及其驱动方法和具有其的存储器系统 |
CN102005248B (zh) * | 2009-08-31 | 2015-06-17 | 三星电子株式会社 | 非易失性存储器件及其驱动方法和具有其的存储器系统 |
CN103403807A (zh) * | 2011-06-16 | 2013-11-20 | 株式会社东芝 | 包括可变电阻元件的非易失性半导体存储器设备 |
US9147469B2 (en) | 2011-06-16 | 2015-09-29 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device including variable resistance element |
CN103403807B (zh) * | 2011-06-16 | 2016-08-10 | 株式会社东芝 | 包括可变电阻元件的非易失性半导体存储器设备 |
CN105938722A (zh) * | 2015-03-04 | 2016-09-14 | 爱思开海力士有限公司 | 可变电阻存储器件及操作其的方法 |
CN105938722B (zh) * | 2015-03-04 | 2020-11-20 | 爱思开海力士有限公司 | 可变电阻存储器件及操作其的方法 |
CN106128502A (zh) * | 2015-05-06 | 2016-11-16 | 爱思开海力士有限公司 | 电子设备及其操作方法 |
CN106128502B (zh) * | 2015-05-06 | 2020-10-02 | 爱思开海力士有限公司 | 电子设备及其操作方法 |
CN110718257A (zh) * | 2018-07-11 | 2020-01-21 | 西安格易安创集成电路有限公司 | 一种电压偏置电路及方法 |
CN111951874A (zh) * | 2019-05-14 | 2020-11-17 | 北京兆易创新科技股份有限公司 | 一种校验的方法和装置 |
CN111951874B (zh) * | 2019-05-14 | 2022-10-18 | 兆易创新科技集团股份有限公司 | 一种校验的方法和装置 |
Also Published As
Publication number | Publication date |
---|---|
TW200527434A (en) | 2005-08-16 |
JP2005078779A (ja) | 2005-03-24 |
TWI251835B (en) | 2006-03-21 |
CN1591692B (zh) | 2013-06-12 |
EP1513161A2 (en) | 2005-03-09 |
KR20050025076A (ko) | 2005-03-11 |
KR100628349B1 (ko) | 2006-09-27 |
US7283391B2 (en) | 2007-10-16 |
US20050057993A1 (en) | 2005-03-17 |
JP4278140B2 (ja) | 2009-06-10 |
EP1513161A3 (en) | 2006-11-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1591692A (zh) | 半导体存储装置 | |
US10192622B2 (en) | Systems, methods, and apparatus for memory cells with common source lines | |
US20030218908A1 (en) | Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure therefor | |
KR101915719B1 (ko) | 불휘발성 메모리 장치 및 그것의 프로그램 동작 방법 | |
CN1505043A (zh) | 非易失性存储单元及非易失性半导体存储装置 | |
CN1228784C (zh) | 非易失性半导体存储装置的编程方法 | |
US7706183B2 (en) | Read mode for flash memory | |
CN1574092A (zh) | 高密度的相随机存取存储器 | |
CN1849670A (zh) | 用于闪存的升压衬底/槽编程 | |
CN1389923A (zh) | 非易失性半导体存储装置 | |
CN1941204A (zh) | 同时编程与编程验证的非易失性存储器 | |
CN1658393A (zh) | 包括高压晶体管的非易失性存储器件及其制造方法 | |
CN1203551C (zh) | 非易失性半导体存储装置 | |
TW201822198A (zh) | 具有記憶體閘極線路和源極線路亂序的非揮發性記憶體陣列 | |
CN1591691A (zh) | 编程操作时控制位线电压电平的闪存编程控制电路和方法 | |
CN100367506C (zh) | 字节操作非易失性半导体存储装置 | |
CN1841754A (zh) | Nor型混合多位非易失性存储器件及其操作方法 | |
US7295475B2 (en) | Flash memory programming using an indication bit to interpret state | |
CN1509477A (zh) | 擦除后自动编程扰乱(apde)期间提高效率的快闪存储装置 | |
CN1229811C (zh) | Eeprom使用的单一晶体管存储单元 | |
CN1286118C (zh) | 半导体存储器件 | |
CN1181555C (zh) | 非易失性半导体存储装置 | |
JP2024001222A (ja) | 半導体記憶装置 | |
CN101069241A (zh) | 含有包括可编程电阻器的存储单元的集成电路以及用于寻址包括可编程电阻器的存储单元的方法 | |
CN1776822A (zh) | 非易失性记忆体的编程方法及装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: ICAN TREFFERT INTELLECTUAL PROPERTY Free format text: FORMER OWNER: SHARP CORPORATION Effective date: 20130207 Owner name: ALLOGENE DEVELOPMENT CO., LTD. Free format text: FORMER OWNER: ICAN TREFFERT INTELLECTUAL PROPERTY Effective date: 20130207 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20130207 Address after: Delaware Applicant after: Allogeneic Development Co.,Ltd. Address before: Budapest Applicant before: Eicke Fout intellectual property Co. Effective date of registration: 20130207 Address after: Budapest Applicant after: Eicke Fout intellectual property Co. Address before: Osaka, Japan Applicant before: Sharp Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |