CN1581435A - 用于RRAM的旋转涂布Pr1-xCaxMnO3薄膜的高温退火 - Google Patents
用于RRAM的旋转涂布Pr1-xCaxMnO3薄膜的高温退火 Download PDFInfo
- Publication number
- CN1581435A CN1581435A CNA200410056667XA CN200410056667A CN1581435A CN 1581435 A CN1581435 A CN 1581435A CN A200410056667X A CNA200410056667X A CN A200410056667XA CN 200410056667 A CN200410056667 A CN 200410056667A CN 1581435 A CN1581435 A CN 1581435A
- Authority
- CN
- China
- Prior art keywords
- aforementioned
- annealing
- pcmo
- record
- under
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000137 annealing Methods 0.000 title claims abstract description 95
- 239000010409 thin film Substances 0.000 title abstract 7
- 238000000034 method Methods 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000002243 precursor Substances 0.000 claims abstract description 10
- 238000000576 coating method Methods 0.000 claims description 32
- 239000011248 coating agent Substances 0.000 claims description 31
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- 239000012298 atmosphere Substances 0.000 claims description 22
- 229910052697 platinum Inorganic materials 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 229910052741 iridium Inorganic materials 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000009825 accumulation Methods 0.000 claims description 14
- 125000006850 spacer group Chemical group 0.000 claims description 14
- 239000007772 electrode material Substances 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000012453 solvate Substances 0.000 claims description 8
- 229910004491 TaAlN Inorganic materials 0.000 claims description 7
- 229910004200 TaSiN Inorganic materials 0.000 claims description 7
- 229910010038 TiAl Inorganic materials 0.000 claims description 7
- 229910010037 TiAlN Inorganic materials 0.000 claims description 7
- 229910008482 TiSiN Inorganic materials 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 229910000510 noble metal Inorganic materials 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 239000010970 precious metal Substances 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007591 painting process Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/640728 | 2003-08-13 | ||
US10/640,728 | 2003-08-13 | ||
US10/640,728 US6774054B1 (en) | 2003-08-13 | 2003-08-13 | High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM application |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1581435A true CN1581435A (zh) | 2005-02-16 |
CN1316563C CN1316563C (zh) | 2007-05-16 |
Family
ID=32825666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410056667XA Expired - Fee Related CN1316563C (zh) | 2003-08-13 | 2004-08-13 | 用于RRAM的旋转涂布Pr1-xCaX]MnO3薄膜的高温退火 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6774054B1 (zh) |
EP (1) | EP1507288A3 (zh) |
JP (1) | JP4756570B2 (zh) |
KR (1) | KR100587752B1 (zh) |
CN (1) | CN1316563C (zh) |
TW (1) | TWI251332B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100550459C (zh) * | 2007-01-12 | 2009-10-14 | 中国科学院上海硅酸盐研究所 | 提高脉冲触发电阻式随机存储器抗疲劳特性的方法 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6965137B2 (en) * | 2002-08-02 | 2005-11-15 | Unity Semiconductor Corporation | Multi-layer conductive memory device |
US6911361B2 (en) * | 2003-03-10 | 2005-06-28 | Sharp Laboratories Of America, Inc. | Low temperature processing of PCMO thin film on Ir substrate for RRAM application |
US6955992B2 (en) * | 2003-09-30 | 2005-10-18 | Sharp Laboratories Of America, Inc. | One mask PT/PCMO/PT stack etching process for RRAM applications |
US20060171200A1 (en) * | 2004-02-06 | 2006-08-03 | Unity Semiconductor Corporation | Memory using mixed valence conductive oxides |
US7082052B2 (en) | 2004-02-06 | 2006-07-25 | Unity Semiconductor Corporation | Multi-resistive state element with reactive metal |
US7402456B2 (en) * | 2004-04-23 | 2008-07-22 | Sharp Laboratories Of America, Inc. | PCMO thin film with memory resistance properties |
JP4460363B2 (ja) * | 2004-06-08 | 2010-05-12 | シャープ株式会社 | 半導体装置及びその製造方法 |
US7169637B2 (en) * | 2004-07-01 | 2007-01-30 | Sharp Laboratories Of America, Inc. | One mask Pt/PCMO/Pt stack etching process for RRAM applications |
US7339813B2 (en) * | 2004-09-30 | 2008-03-04 | Sharp Laboratories Of America, Inc. | Complementary output resistive memory cell |
WO2006109622A1 (ja) * | 2005-04-12 | 2006-10-19 | Matsushita Electric Industrial Co., Ltd. | 電気素子,メモリ装置,および半導体集積回路 |
KR100722853B1 (ko) * | 2005-06-23 | 2007-05-30 | 한양대학교 산학협력단 | 절연막의 적층증착에 의한 저항 메모리 소자의 제조방법 |
US20070048990A1 (en) * | 2005-08-30 | 2007-03-01 | Sharp Laboratories Of America, Inc. | Method of buffer layer formation for RRAM thin film deposition |
US20070205096A1 (en) * | 2006-03-06 | 2007-09-06 | Makoto Nagashima | Magnetron based wafer processing |
US8395199B2 (en) | 2006-03-25 | 2013-03-12 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
KR100785509B1 (ko) * | 2006-06-19 | 2007-12-13 | 한양대학교 산학협력단 | ReRAM 소자 및 그 제조 방법 |
US7932548B2 (en) | 2006-07-14 | 2011-04-26 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
US8454810B2 (en) | 2006-07-14 | 2013-06-04 | 4D-S Pty Ltd. | Dual hexagonal shaped plasma source |
US8308915B2 (en) | 2006-09-14 | 2012-11-13 | 4D-S Pty Ltd. | Systems and methods for magnetron deposition |
CN101441890B (zh) * | 2008-12-18 | 2011-11-30 | 中国科学院微电子研究所 | 电阻转变型存储器及其驱动装置和方法 |
WO2010087000A1 (ja) * | 2009-01-30 | 2010-08-05 | 株式会社 東芝 | 不揮発性記憶装置の製造方法 |
KR101105981B1 (ko) | 2009-04-28 | 2012-01-18 | 한양대학교 산학협력단 | 저항변화 메모리 소자 및 이의 제조방법 |
US8227783B2 (en) | 2009-07-13 | 2012-07-24 | Seagate Technology Llc | Non-volatile resistive sense memory with praseodymium calcium manganese oxide |
US8377718B2 (en) * | 2010-11-10 | 2013-02-19 | Micron Technology, Inc. | Methods of forming a crystalline Pr1-xCaxMnO3 (PCMO) material and methods of forming semiconductor device structures comprising crystalline PCMO |
US8859382B2 (en) | 2011-10-26 | 2014-10-14 | Micron Technology, Inc. | Methods of forming metal oxide and memory cells |
US11301557B2 (en) | 2019-07-19 | 2022-04-12 | Dell Products L.P. | System and method for data processing device management |
EP4153797A4 (en) * | 2020-05-20 | 2024-07-17 | Hrl Lab Llc | METHOD FOR GROWING CRYSTALLINE OPTICAL FILMS ON SI SUBSTRATES WHICH MAY POSSIBLY EXHIBIT EXTREMELY LOW OPTICAL LOSS IN THE INFRARED SPECTRUM WITH HYDROGENATION OF CRYSTALLINE OPTICAL FILMS |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4946710A (en) * | 1987-06-02 | 1990-08-07 | National Semiconductor Corporation | Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films |
WO1992019564A1 (en) * | 1991-05-01 | 1992-11-12 | The Regents Of The University Of California | Amorphous ferroelectric materials |
US5188902A (en) * | 1991-05-30 | 1993-02-23 | Northern Illinois University | Production of PT/PZT/PLZI thin films, powders, and laser `direct write` patterns |
US5699035A (en) * | 1991-12-13 | 1997-12-16 | Symetrix Corporation | ZnO thin-film varistors and method of making the same |
US5650362A (en) * | 1993-11-04 | 1997-07-22 | Fuji Xerox Co. | Oriented conductive film and process for preparing the same |
US6066581A (en) * | 1995-07-27 | 2000-05-23 | Nortel Networks Corporation | Sol-gel precursor and method for formation of ferroelectric materials for integrated circuits |
JPH0959022A (ja) * | 1995-08-23 | 1997-03-04 | Nippon Steel Corp | Mn系ペロフスカイト酸化物薄膜の製造方法 |
DE19743270A1 (de) * | 1997-09-30 | 1999-04-01 | Siemens Ag | Herstellverfahren für eine keramische Schicht |
US6040040A (en) * | 1998-01-28 | 2000-03-21 | Ncr Corporation | Multi-layer thermal transfer media from selectively curable formulations |
KR20020015048A (ko) * | 1999-06-10 | 2002-02-27 | 시메트릭스 코포레이션 | 높은 유전상수 어플리케이션용 금속 옥사이드 박막 |
JP2002305288A (ja) * | 2000-08-25 | 2002-10-18 | Nomura Shinzo | キャパシタ電極構造及び半導体記憶装置 |
US6531371B2 (en) * | 2001-06-28 | 2003-03-11 | Sharp Laboratories Of America, Inc. | Electrically programmable resistance cross point memory |
US6693821B2 (en) * | 2001-06-28 | 2004-02-17 | Sharp Laboratories Of America, Inc. | Low cross-talk electrically programmable resistance cross point memory |
JP4488661B2 (ja) * | 2001-09-18 | 2010-06-23 | Okiセミコンダクタ株式会社 | 強誘電体キャパシタの製造方法 |
US6759249B2 (en) * | 2002-02-07 | 2004-07-06 | Sharp Laboratories Of America, Inc. | Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory |
JP2004092296A (ja) * | 2002-09-03 | 2004-03-25 | Hideyuki Onoda | 仮設足場設計データ提供装置およびその方法、ならびに仮設足場設計データ提供プログラム |
-
2003
- 2003-08-13 US US10/640,728 patent/US6774054B1/en not_active Expired - Fee Related
-
2004
- 2004-08-05 JP JP2004229953A patent/JP4756570B2/ja not_active Expired - Fee Related
- 2004-08-11 EP EP04019084A patent/EP1507288A3/en not_active Withdrawn
- 2004-08-11 TW TW093124064A patent/TWI251332B/zh not_active IP Right Cessation
- 2004-08-12 KR KR1020040063600A patent/KR100587752B1/ko not_active IP Right Cessation
- 2004-08-13 CN CNB200410056667XA patent/CN1316563C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100550459C (zh) * | 2007-01-12 | 2009-10-14 | 中国科学院上海硅酸盐研究所 | 提高脉冲触发电阻式随机存储器抗疲劳特性的方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI251332B (en) | 2006-03-11 |
EP1507288A3 (en) | 2007-06-06 |
KR20050017394A (ko) | 2005-02-22 |
JP4756570B2 (ja) | 2011-08-24 |
EP1507288A2 (en) | 2005-02-16 |
US6774054B1 (en) | 2004-08-10 |
TW200525737A (en) | 2005-08-01 |
JP2005064502A (ja) | 2005-03-10 |
CN1316563C (zh) | 2007-05-16 |
KR100587752B1 (ko) | 2006-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1316563C (zh) | 用于RRAM的旋转涂布Pr1-xCaX]MnO3薄膜的高温退火 | |
CN1287420C (zh) | 用于RRAM应用的Ir基材上PCMO薄膜的低温处理 | |
US7407858B2 (en) | Resistance random access memory devices and method of fabrication | |
US6664117B2 (en) | Method for resistance memory metal oxide thin film deposition | |
EP1507297B1 (en) | Method for obtaining reversible resistance switches in a PCMO thin film deposited on a highly crystallized seed layer | |
CN1174473C (zh) | 层状超晶格材料和abo3型金属氧化物材料的制备方法 | |
JP2005340786A (ja) | メモリ抵抗特性を有するpcmo薄膜の形成方法及びpcmoデバイス | |
US7098101B1 (en) | Method of forming PrxCa1−xMnO3 thin films having a PrMnO3/CaMnO3 super lattice structure using metalorganic chemical vapor deposition | |
JP2004241396A (ja) | 抵抗変化素子の製造方法および不揮発性抵抗変化メモリデバイスの製造方法、並びに不揮発性抵抗変化メモリデバイス | |
JP2006024901A (ja) | Rram薄膜堆積用の基板表面処理方法 | |
KR20060134563A (ko) | 절연막의 적층증착에 의한 저항 메모리 소자의 제조방법 | |
JPH10223847A (ja) | 強誘電体薄膜素子の製造方法、強誘電体薄膜素子及び強誘電体メモリ装置 | |
JP2005236236A (ja) | RRAMに用いるためのIr基板上のPCMO薄膜の低温処理 | |
JPH07172984A (ja) | 誘電体薄膜の製造方法及びその製造装置 | |
JPH06168878A (ja) | 誘電体薄膜の製造方法および製造装置 | |
JP2007281457A (ja) | 可変抵抗素子及びその形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ICAN TREFFERT INTELLECTUAL PROPERTY Free format text: FORMER OWNER: SHARP CORPORATION Effective date: 20130131 Owner name: ALLOGENE DEVELOPMENT CO., LTD. Free format text: FORMER OWNER: ICAN TREFFERT INTELLECTUAL PROPERTY Effective date: 20130131 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130131 Address after: Delaware Patentee after: Allogeneic Development Co.,Ltd. Address before: Budapest Patentee before: Eicke Fout intellectual property Co. Effective date of registration: 20130131 Address after: Budapest Patentee after: Eicke Fout intellectual property Co. Address before: Osaka, Japan Patentee before: Sharp Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070516 Termination date: 20140813 |
|
EXPY | Termination of patent right or utility model |