CN1554125A - 相变材料存储器装置 - Google Patents

相变材料存储器装置 Download PDF

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CN1554125A
CN1554125A CNA028175670A CN02817567A CN1554125A CN 1554125 A CN1554125 A CN 1554125A CN A028175670 A CNA028175670 A CN A028175670A CN 02817567 A CN02817567 A CN 02817567A CN 1554125 A CN1554125 A CN 1554125A
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Ta
T·A·劳里
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Intel Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8616—Thermal insulation means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

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Abstract

一种可使用单一的、杯状相变材料(18)形成的相变材料存储器单元(10)。该杯状相变材料(18)的内部可使用热绝缘材料(22)填充。结果是，可通过该杯状相变材料(18)减少在一些实施例中的向上的热损失以及相变材料(18)和装置(10)的剩余部分之间的粘附问题。此外，阻挡层(20)可被设置在上部电极(28)和装置(10)的剩余部分之间，以减少一些实施例中从上部电极向相变材料(18)中的物质引入。可使用化学机械抛光以限定相变材料(18)，减少一些实施例中的相变材料干法蚀刻的影响。

Description

相变材料存储器装置
技术领域
本发明主要涉及电子存储器，特别涉及使用相变材料的电子存储器。
背景技术
相变材料可显示出至少两种不同的状态。这些状态可被叫做非晶态和晶态。在这些状态之间的转变可被有选择地引发。由于非晶态一般显示出比晶态更高的电阻率，因此这些状态可进行区分。非晶态包括无序的原子结构。通常可使用任一种相变材料。然而在一些实施例中，薄膜硫族化物合金(chalcogenide alloy)可能是最适合的。
相变可被逆向诱发。因此，存储器可随温度变化由非晶态转变成晶态，此后又回复到非晶态，或反之亦然。实际上，每一存储器单元可被想成程序控制的电阻器，在高电阻状态和低电阻状态之间进行可逆转变。可通过电阻加热诱发相变。
在一些实施例中，存储器单元可具有多个状态。即由于可通过其电阻值区分每一状态，就有可能实现由电阻确定的多个状态，使得可以在单个单元中存储数据位。
已知有多种相变合金。通常，硫族化物合金含有一种或多种元素周期表第VI族的元素。最适合的一类合金是GeSbTe合金。
相变材料可通过绝缘体在通道或孔隙中成形。相变材料可与在孔隙各端部上的上部电极和下部电极相连接。
一个存在的问题是：绝缘体和相变材料之间的粘附性较差。这一问题的一个解决方案是：提供促进绝缘体和相变材料之间粘附性的界面层。通常，合适的界面层为导体如钛。
特别是，由于使用拉长的相变材料，因此增大了分离的可能性。不管后续工艺步骤中的热膨胀和收缩，使用柱状条带的相变材料对沿长条带的粘附性有要求。沿相变材料叠层自身的柱列，且在集成电路工艺流程中要求作为的集成的一部分的随后的薄膜沉积物中还存在累积应力。
另一种选择是，胶体层可位于绝缘体和相变材料之间。然而，胶体层可减削相变材料或增加处理成本。
现有相变存储器的另一个问题是通过存储器单元的向上的热损失。热损失越大，由于热量被用于诱发程序设计相变，因此要求的程序设计电流越大。
另一个问题是从上部电极向相变材料中这些物质的加入。物质加入可对相变材料的程序设计性质产生不利效果。
现有相变材料存储器的另一个问题是需要对相变材料进行干法蚀刻。相变材料叠层的干法蚀刻是一个复杂的过程。由此会遇到基蚀和凹腔外形的问题。
因此，需要改进可使用更多有利技术进行生产的相变存储器的设计。
附图说明
图1是根据本发明的一个实施例的放大横断面视图；
图2是图1中所示装置的横向放大横断面视图；
图3是图1和图2中所示实施例的顶部平面图；
图4是根据本发明的一个实施例的图1中所示构件的初始加工的放大横断面视图；
图5示出了根据本发明的一个实施例在图4中所示构件上的后续加工；
图6示出了根据本发明的一个实施例对图5中所示构件的后续加工；以及
图7示出了根据本发明的一个实施例对图6中所示实施例的后续加工。
具体实施方式
参见图1，相变型存储器单元10可在基底12上形成，在一个实施例中可为硅基底。一对下部电极14可在基底12上形成。该电极14可被绝缘体16分隔开。在下部电极14之上、下部电极14和顶部电极28之间可形成孔隙。该孔隙可包括覆盖有相似形状阻挡层20的渐尖的杯状相变材料18。可在阻挡层20和相变材料18的中央部分填入填充绝缘体22。蚀刻终止层24(etch stop layer)位于阻挡层26之下，而阻挡层26位于顶部电极28之下。
参见图2，顶部电极28沿两个邻近的孔隙延伸。这些孔隙可被绝缘体16分隔开。由孔隙限定的存储器单元在一些实施例中可大量分布在基底12上。如图3所示，每一电极28覆盖包括被绝缘体16分隔开的覆盖有蚀刻终止层24的元件14、18、20和22的多个孔隙。
根据本发明一个实施例的存储器单元10的成形技术可包括使用传统布线图案制作和沉积技术在基底12上初始形成下部电极14，如图4所示。任何传统技术可被用于形成电极14。该电极14可由多种导体包括钴的硅化物形成。
然后绝缘体16可被沉积在已形成图案的下部电极14上。在一个实施例中，绝缘体16可以是电绝缘体和热绝缘体。二氧化硅是一种适合的材料，在一个实施例中其厚度可为约50-1500埃。紧接着进行平面化处理，例如：化学机械抛光(CMP)以得到总体上和局部的平面度。若需要，随后可沉积CMP蚀刻终止层24。该终止层24可以是氮化硅或多晶硅，在一个实施例中其厚度为10-1000埃。
以下参见图5，由蚀刻终止层24限定的孔洞32容纳衬垫30。可使用传统技术形成该衬垫30，即沉积绝缘层并有选择地对下部电极14和蚀刻终止层24之间的一层进行各向异性干法蚀刻。衬垫30可由二氧化硅或氮化硅如Si3N4制成。在一个实施例中该衬垫30的厚度可在50-2000埃的范围内。
下面看图6，在一个实施例中相变层18、阻挡层20和填充绝缘体22可以连续的方式沉积在如图5所示的构件上。在一个实施例中，该相变材料18可以是以硫族化物为基的材料例如：Ge2Sb2Te5，厚度为50-1000埃。阻挡层20可由例如厚度在10-500埃范围内的例如钛、氮化钛或钛-钨合金制成。填充绝缘体22可以是任何具有低热导率和电导率的绝缘体。适当的填充绝缘体22材料的例子包括二氧化硅或氮化硅，例如该Si3N4的厚度为约500-10000埃。
最后看图7，化学机械抛光(CMP)除去了在蚀刻终止层24上的全部填充绝缘体22、阻挡层20和相变材料18。由此CMP限定了相变材料18的构件，而免去了在一个实施例中的干法蚀刻。如前面所述，使用干法蚀刻会使工艺流程复杂化且产生基蚀和凹腔外形的问题。此外，由于相变材料18被限定在封装的单一区域内，因此可大大减少或甚至消除，即使是暴露于随后的热应力之后，相变材料18和周围材料之间的粘附问题。
在相变材料18上安放绝缘体22减少了向上的热损失。热损失可导致需要更大的设计电流以获得相同的设计效果。
如图1所示，图7的构件可被覆盖有阻挡层26和顶部电极28。在一个实施例中，阻挡层26可以是厚度在10-500埃范围内的钛、氮化钛或钛-钨合金。在一个实施例中，顶部电极28可以是厚度在200-20000埃范围内的铜铝合金。在一些实施例中，阻挡层26的使用可减少从顶部电极28向相变材料18中引入物质。顶部电极28和阻挡层26可使用标准光刻和干法蚀刻技术形成图案，以得到如图1、2、和3所示的构件。
尽管通过有限数量的实施例对本发明进行了描述，本领域的技术人员意识到可对其中进行许多修改和变化。意图是在本发明的实质精神和范围内附加权利要求覆盖了所有这些修改和变化。

Claims (39)

1、一种方法包括：
限定一个单一开口；
在所述开口中形成杯状相变材料；以及
在该杯状相变材料中形成热绝缘材料。
2、根据权利要求1所述的方法包括形成电极和阻挡层，所述电极通过所述阻挡层与所述相变材料相连接。
3、根据权利要求1所述的方法包括形成与所述相变材料电连接的电极并使用阻挡层将所述电极中的物质与所述相变材料相隔离。
4、根据权利要求1所述的方法包括绝缘所述相变材料以减少向上的热损失。
5、根据权利要求1所述的方法包括使用平面化处理限定所述相变材料。
6、根据权利要求5所述的方法包括使用化学机械抛光技术限定所述相变材料。
7、根据权利要求1所述的方法包括在所述单一开口中限定侧壁衬垫。
8、根据权利要求7所述的方法包括在所述开口中限定电极。
9、根据权利要求8所述的方法包括使用所述侧壁衬垫限定所述相变材料的杯形形状。
10、一种存储器包括：
支承构件；
在所述支承构件上的绝缘体，所述绝缘体具有在所述绝缘体中限定的开口；
在所述开口中的杯状相变材料；以及
在所述杯状相变材料中的热绝缘材料。
11、根据权利要求10所述的存储器，其特征在于，所述热绝缘材料充满所述杯状相变材料。
12、根据权利要求10所述的存储器包括电极和在所述电极和所述相变材料之间的阻挡层，所述电极通过所述阻挡层与所述相变材料相连接。
13、根据权利要求10所述的存储器包括与该相变材料电连接的电极以将该电极中的物质与该相变材料相隔离。
14、根据权利要求10所述的存储器包括在该相变材料上的绝缘体以减少向上的热损失。
15、根据权利要求10所述的存储器，其特征在于，所述相变材料是单一的。
16、根据权利要求15所述的存储器包括在所述单一开口中的侧壁衬垫。
17、根据权利要求16所述的存储器包括在所述开口中的电极。
18、根据权利要求17所述的存储器，其特征在于，所述杯状相变材料在所述侧壁衬垫上形成。
19、根据权利要求10所述的存储器，其特征在于，该相变材料一般与该侧壁衬垫相平行。
20、一种方法包括：
限定相变材料；
在所述相变材料上形成电极；以及
将所述电极与所述相变材料相隔离。
21、根据权利要求20所述的方法包括在所述相变材料和所述电极之间加入阻挡层。
22、根据权利要求21所述的方法包括加入导体阻挡层。
23、根据权利要求22所述的方法包括形成所述氮化钛阻挡层。
24、一种存储器包括：
相变材料；
在所述相变材料上的电极；以及
在所述相变材料和所述电极之间的阻挡层。
25、根据权利要求24所述的存储器，其特征在于，所述阻挡层为导体层。
26、根据权利要求25所述的存储器，其特征在于，所述阻挡层包括钛。
27、根据权利要求24所述的存储器，其特征在于，所述阻挡层阻止了在所述电极中的物质进入所述相变材料。
28、一种方法包括：
限定在构件中的开口；
在所述开口内和在所述构件之上形成一层相变材料；以及
平面化处理所述相变材料。
29、根据权利要求28所述的方法包括化学机械抛光所述相变材料。
30、根据权利要求28所述的方法包括在所述开口中形成侧壁衬垫并然后沉积所述相变材料。
31、根据权利要求28所述的方法包括形成杯状相变材料。
32、根据权利要求31所述的方法包括使用绝缘体填满所述杯状相变材料。
33、一种存储器包括：
支承构件；
在所述支承构件中的开口；以及
在所述开口中的平面化的相变材料。
34、根据权利要求33所述的存储器，其特征在于，所述相变材料是杯状的。
35、根据权利要求34所述的存储器包括在所述杯状相变材料中的绝缘体。
36、根据权利要求33所述的存储器，其特征在于，所述相变材料被封装。
37、根据权利要求33所述的存储器，其特征在于，所述相变材料是单一的。
38、根据权利要求33所述的存储器包括与所述相变材料相连接的电极。
39、根据权利要求38所述的存储器包括在所述电极和所述材料之间的阻挡层。
CNB028175670A 2001-09-07 2002-08-20 相变材料存储器装置和形成方法 Expired - Fee Related CN100379046C (zh)

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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7599216B2 (en) 2005-02-18 2009-10-06 Samsung Electronics Co., Ltd. Phase change memory devices and fabrication methods thereof
US7692272B2 (en) 2006-01-19 2010-04-06 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
US7723717B2 (en) 2006-08-22 2010-05-25 Elpida Memory, Inc. Semiconductor memory device and fabrication method thereof
CN1983660B (zh) * 2005-12-15 2010-05-26 尔必达存储器株式会社 非易失存储元件的制造方法
CN101257087B (zh) * 2007-02-14 2010-06-09 旺宏电子股份有限公司 具有填充侧壁存储元件的相变化存储单元及其制造方法
CN101183681B (zh) * 2006-11-16 2011-01-19 旺宏电子股份有限公司 用于提升保存能力的双稳态阻抗随机存取存储器结构
CN101728482B (zh) * 2008-10-24 2011-12-07 中芯国际集成电路制造(上海)有限公司 相变半导体器件的制造方法及相变半导体器件
CN102420287A (zh) * 2010-09-24 2012-04-18 旺宏电子股份有限公司 电流相对于由电极定义的轴横向流动的相变化只读存储器
CN102629662A (zh) * 2011-02-03 2012-08-08 旺宏电子股份有限公司 形成pcram自对准位线方法及自对准深刻蚀方法
CN101964394B (zh) * 2009-07-24 2012-10-17 中芯国际集成电路制造(上海)有限公司 一种制作相变存储单元相变单元的方法
CN102024838B (zh) * 2008-02-05 2012-11-14 旺宏电子股份有限公司 一种包含凹陷部位电极的集成电路
CN103839919A (zh) * 2012-11-23 2014-06-04 中芯国际集成电路制造(上海)有限公司 电极的制造方法、熔丝装置及其制造方法
WO2015007108A1 (zh) * 2013-07-19 2015-01-22 中国科学院上海微系统与信息技术研究所 相变存储单元及其制备方法
CN105098071A (zh) * 2015-07-08 2015-11-25 宁波时代全芯科技有限公司 制造相变化记忆体的方法
CN107275282A (zh) * 2011-03-17 2017-10-20 美光科技公司 半导体结构及形成半导体结构的方法

Families Citing this family (297)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6638820B2 (en) 2001-02-08 2003-10-28 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
US6734455B2 (en) * 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US7102150B2 (en) * 2001-05-11 2006-09-05 Harshfield Steven T PCRAM memory cell and method of making same
US6955940B2 (en) * 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US7319057B2 (en) * 2001-10-30 2008-01-15 Ovonyx, Inc. Phase change material memory device
US6815818B2 (en) * 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6791859B2 (en) 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
EP1318552A1 (en) * 2001-12-05 2003-06-11 STMicroelectronics S.r.l. Small area contact region, high efficiency phase change memory cell and fabrication method thereof
EP1469532B1 (en) * 2003-04-16 2009-08-26 STMicroelectronics S.r.l. Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured
US6909656B2 (en) * 2002-01-04 2005-06-21 Micron Technology, Inc. PCRAM rewrite prevention
US20030143782A1 (en) 2002-01-31 2003-07-31 Gilton Terry L. Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures
US6867064B2 (en) * 2002-02-15 2005-03-15 Micron Technology, Inc. Method to alter chalcogenide glass for improved switching characteristics
US6791885B2 (en) 2002-02-19 2004-09-14 Micron Technology, Inc. Programmable conductor random access memory and method for sensing same
US6972430B2 (en) * 2002-02-20 2005-12-06 Stmicroelectronics S.R.L. Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
US6930913B2 (en) * 2002-02-20 2005-08-16 Stmicroelectronics S.R.L. Contact structure, phase change memory cell, and manufacturing method thereof with elimination of double contacts
US7151273B2 (en) 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US6891747B2 (en) 2002-02-20 2005-05-10 Stmicroelectronics S.R.L. Phase change memory cell and manufacturing method thereof using minitrenches
US6809362B2 (en) 2002-02-20 2004-10-26 Micron Technology, Inc. Multiple data state memory cell
US6858482B2 (en) * 2002-04-10 2005-02-22 Micron Technology, Inc. Method of manufacture of programmable switching circuits and memory cells employing a glass layer
JP2005524989A (ja) 2002-05-08 2005-08-18 フォーセン テクノロジー インク 高効率固体光源及びその使用方法及びその製造方法
US6890790B2 (en) 2002-06-06 2005-05-10 Micron Technology, Inc. Co-sputter deposition of metal-doped chalcogenides
JP4027282B2 (ja) * 2002-07-10 2007-12-26 キヤノン株式会社 インクジェット記録ヘッド
US7015494B2 (en) * 2002-07-10 2006-03-21 Micron Technology, Inc. Assemblies displaying differential negative resistance
US6872963B2 (en) * 2002-08-08 2005-03-29 Ovonyx, Inc. Programmable resistance memory element with layered memory material
US6864503B2 (en) * 2002-08-09 2005-03-08 Macronix International Co., Ltd. Spacer chalcogenide memory method and device
US6856002B2 (en) * 2002-08-29 2005-02-15 Micron Technology, Inc. Graded GexSe100-x concentration in PCRAM
US6864521B2 (en) * 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US7163837B2 (en) * 2002-08-29 2007-01-16 Micron Technology, Inc. Method of forming a resistance variable memory element
US7010644B2 (en) * 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US7364644B2 (en) 2002-08-29 2008-04-29 Micron Technology, Inc. Silver selenide film stoichiometry and morphology control in sputter deposition
US7049623B2 (en) * 2002-12-13 2006-05-23 Ovonyx, Inc. Vertical elevated pore phase change memory
EP1439583B1 (en) * 2003-01-15 2013-04-10 STMicroelectronics Srl Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
US7115927B2 (en) * 2003-02-24 2006-10-03 Samsung Electronics Co., Ltd. Phase changeable memory devices
US7425735B2 (en) 2003-02-24 2008-09-16 Samsung Electronics Co., Ltd. Multi-layer phase-changeable memory devices
US7402851B2 (en) * 2003-02-24 2008-07-22 Samsung Electronics Co., Ltd. Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
US6813178B2 (en) 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
KR100560659B1 (ko) * 2003-03-21 2006-03-16 삼성전자주식회사 상변화 기억 소자 및 그 제조 방법
US7050327B2 (en) 2003-04-10 2006-05-23 Micron Technology, Inc. Differential negative resistance memory
US7220656B2 (en) 2003-04-29 2007-05-22 Micron Technology, Inc. Strained semiconductor by wafer bonding with misorientation
US6930909B2 (en) * 2003-06-25 2005-08-16 Micron Technology, Inc. Memory device and methods of controlling resistance variation and resistance profile drift
US6961277B2 (en) 2003-07-08 2005-11-01 Micron Technology, Inc. Method of refreshing a PCRAM memory device
US7211819B2 (en) * 2003-08-04 2007-05-01 Intel Corporation Damascene phase change memory
US7381611B2 (en) 2003-08-04 2008-06-03 Intel Corporation Multilayered phase change memory
US20050029504A1 (en) * 2003-08-04 2005-02-10 Karpov Ilya V. Reducing parasitic conductive paths in phase change memories
EP1678442B8 (en) 2003-10-31 2013-06-26 Phoseon Technology, Inc. Led light module and manufacturing method
US7943919B2 (en) * 2003-12-10 2011-05-17 International Business Machines Corporation Integrated circuit with upstanding stylus
US7057923B2 (en) * 2003-12-10 2006-06-06 International Buisness Machines Corp. Field emission phase change diode memory
US7928420B2 (en) * 2003-12-10 2011-04-19 International Business Machines Corporation Phase change tip storage cell
KR100583118B1 (ko) * 2003-12-19 2006-05-23 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성방법
KR100568511B1 (ko) * 2003-12-30 2006-04-07 삼성전자주식회사 상전이막 패턴을 갖는 반도체 장치들 및 그 제조방법들
CN100508235C (zh) * 2004-01-09 2009-07-01 中国科学院上海微系统与信息技术研究所 相变存储器单元器件的制备方法
US7153721B2 (en) * 2004-01-28 2006-12-26 Micron Technology, Inc. Resistance variable memory elements based on polarized silver-selenide network growth
KR100564608B1 (ko) * 2004-01-29 2006-03-28 삼성전자주식회사 상변화 메모리 소자
US7105864B2 (en) * 2004-01-29 2006-09-12 Micron Technology, Inc. Non-volatile zero field splitting resonance memory
US7583551B2 (en) 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
US7005665B2 (en) * 2004-03-18 2006-02-28 International Business Machines Corporation Phase change memory cell on silicon-on insulator substrate
WO2005091392A1 (en) 2004-03-18 2005-09-29 Phoseon Technology, Inc. Micro-reflectors on a substrate for high-density led array
KR100546406B1 (ko) * 2004-04-10 2006-01-26 삼성전자주식회사 상변화 메모리 소자 제조 방법
KR100639206B1 (ko) * 2004-06-30 2006-10-30 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
US7354793B2 (en) 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
KR100612906B1 (ko) * 2004-08-02 2006-08-14 삼성전자주식회사 상변화 기억 소자의 형성 방법
CN100397561C (zh) * 2004-08-06 2008-06-25 中国科学院上海微系统与信息技术研究所 一种纳米相变存储器器件单元的制备方法
US7365411B2 (en) 2004-08-12 2008-04-29 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
KR100566699B1 (ko) * 2004-08-17 2006-04-03 삼성전자주식회사 상변화 메모리 장치 및 그 제조 방법
KR100663348B1 (ko) * 2004-09-02 2007-01-02 삼성전자주식회사 몰딩막 및 형성막 패턴 사이에 개재된 상전이막 패턴을갖는 피이. 램들 및 그 형성방법들.
US9281001B2 (en) 2004-11-08 2016-03-08 Phoseon Technology, Inc. Methods and systems relating to light sources for use in industrial processes
US20060108667A1 (en) * 2004-11-22 2006-05-25 Macronix International Co., Ltd. Method for manufacturing a small pin on integrated circuits or other devices
US7220983B2 (en) * 2004-12-09 2007-05-22 Macronix International Co., Ltd. Self-aligned small contact phase-change memory method and device
US7374174B2 (en) 2004-12-22 2008-05-20 Micron Technology, Inc. Small electrode for resistance variable devices
EP1677371A1 (en) 2004-12-30 2006-07-05 STMicroelectronics S.r.l. Dual resistance heater for phase change devices and manufacturing method thereof
US7709334B2 (en) 2005-12-09 2010-05-04 Macronix International Co., Ltd. Stacked non-volatile memory device and methods for fabricating the same
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US8022382B2 (en) * 2005-03-11 2011-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Phase change memory devices with reduced programming current
US7709289B2 (en) 2005-04-22 2010-05-04 Micron Technology, Inc. Memory elements having patterned electrodes and method of forming the same
US7427770B2 (en) 2005-04-22 2008-09-23 Micron Technology, Inc. Memory array for increased bit density
US7321130B2 (en) * 2005-06-17 2008-01-22 Macronix International Co., Ltd. Thin film fuse phase change RAM and manufacturing method
US7514288B2 (en) * 2005-06-17 2009-04-07 Macronix International Co., Ltd. Manufacturing methods for thin film fuse phase change ram
US7534647B2 (en) 2005-06-17 2009-05-19 Macronix International Co., Ltd. Damascene phase change RAM and manufacturing method
US7238994B2 (en) * 2005-06-17 2007-07-03 Macronix International Co., Ltd. Thin film plate phase change ram circuit and manufacturing method
US8237140B2 (en) * 2005-06-17 2012-08-07 Macronix International Co., Ltd. Self-aligned, embedded phase change RAM
US7514367B2 (en) * 2005-06-17 2009-04-07 Macronix International Co., Ltd. Method for manufacturing a narrow structure on an integrated circuit
US7598512B2 (en) * 2005-06-17 2009-10-06 Macronix International Co., Ltd. Thin film fuse phase change cell with thermal isolation layer and manufacturing method
US7696503B2 (en) * 2005-06-17 2010-04-13 Macronix International Co., Ltd. Multi-level memory cell having phase change element and asymmetrical thermal boundary
US7274034B2 (en) 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7332735B2 (en) 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US7579615B2 (en) 2005-08-09 2009-08-25 Micron Technology, Inc. Access transistor for memory device
US7251154B2 (en) 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
KR100637235B1 (ko) * 2005-08-26 2006-10-20 삼성에스디아이 주식회사 플라즈마 디스플레이 패널
KR100655440B1 (ko) 2005-08-30 2006-12-08 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
US7601995B2 (en) * 2005-10-27 2009-10-13 Infineon Technologies Ag Integrated circuit having resistive memory cells
US7417245B2 (en) * 2005-11-02 2008-08-26 Infineon Technologies Ag Phase change memory having multilayer thermal insulation
US20070111429A1 (en) * 2005-11-14 2007-05-17 Macronix International Co., Ltd. Method of manufacturing a pipe shaped phase change memory
US7397060B2 (en) 2005-11-14 2008-07-08 Macronix International Co., Ltd. Pipe shaped phase change memory
US7450411B2 (en) 2005-11-15 2008-11-11 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7394088B2 (en) * 2005-11-15 2008-07-01 Macronix International Co., Ltd. Thermally contained/insulated phase change memory device and method (combined)
US7786460B2 (en) * 2005-11-15 2010-08-31 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7635855B2 (en) * 2005-11-15 2009-12-22 Macronix International Co., Ltd. I-shaped phase change memory cell
US7414258B2 (en) 2005-11-16 2008-08-19 Macronix International Co., Ltd. Spacer electrode small pin phase change memory RAM and manufacturing method
US7507986B2 (en) 2005-11-21 2009-03-24 Macronix International Co., Ltd. Thermal isolation for an active-sidewall phase change memory cell
US7449710B2 (en) * 2005-11-21 2008-11-11 Macronix International Co., Ltd. Vacuum jacket for phase change memory element
US7479649B2 (en) * 2005-11-21 2009-01-20 Macronix International Co., Ltd. Vacuum jacketed electrode for phase change memory element
US7829876B2 (en) * 2005-11-21 2010-11-09 Macronix International Co., Ltd. Vacuum cell thermal isolation for a phase change memory device
US7816661B2 (en) * 2005-11-21 2010-10-19 Macronix International Co., Ltd. Air cell thermal isolation for a memory array formed of a programmable resistive material
US7599217B2 (en) 2005-11-22 2009-10-06 Macronix International Co., Ltd. Memory cell device and manufacturing method
US7688619B2 (en) 2005-11-28 2010-03-30 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7459717B2 (en) * 2005-11-28 2008-12-02 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7521364B2 (en) 2005-12-02 2009-04-21 Macronix Internation Co., Ltd. Surface topology improvement method for plug surface areas
US7605079B2 (en) * 2005-12-05 2009-10-20 Macronix International Co., Ltd. Manufacturing method for phase change RAM with electrode layer process
US7642539B2 (en) * 2005-12-13 2010-01-05 Macronix International Co., Ltd. Thin film fuse phase change cell with thermal isolation pad and manufacturing method
KR100655082B1 (ko) * 2005-12-23 2006-12-08 삼성전자주식회사 상변화 메모리 소자 및 그 제조방법
US7531825B2 (en) 2005-12-27 2009-05-12 Macronix International Co., Ltd. Method for forming self-aligned thermal isolation cell for a variable resistance memory array
US8062833B2 (en) * 2005-12-30 2011-11-22 Macronix International Co., Ltd. Chalcogenide layer etching method
US20070158632A1 (en) * 2006-01-09 2007-07-12 Macronix International Co., Ltd. Method for Fabricating a Pillar-Shaped Phase Change Memory Element
US7595218B2 (en) * 2006-01-09 2009-09-29 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7741636B2 (en) * 2006-01-09 2010-06-22 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7560337B2 (en) 2006-01-09 2009-07-14 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7825396B2 (en) 2006-01-11 2010-11-02 Macronix International Co., Ltd. Self-align planerized bottom electrode phase change memory and manufacturing method
US7432206B2 (en) * 2006-01-24 2008-10-07 Macronix International Co., Ltd. Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram
US7456421B2 (en) * 2006-01-30 2008-11-25 Macronix International Co., Ltd. Vertical side wall active pin structures in a phase change memory and manufacturing methods
US7714315B2 (en) * 2006-02-07 2010-05-11 Qimonda North America Corp. Thermal isolation of phase change memory cells
US7956358B2 (en) * 2006-02-07 2011-06-07 Macronix International Co., Ltd. I-shaped phase change memory cell with thermal isolation
US7910907B2 (en) * 2006-03-15 2011-03-22 Macronix International Co., Ltd. Manufacturing method for pipe-shaped electrode phase change memory
US7388236B2 (en) * 2006-03-29 2008-06-17 Cree, Inc. High efficiency and/or high power density wide bandgap transistors
US7812334B2 (en) 2006-04-04 2010-10-12 Micron Technology, Inc. Phase change memory elements using self-aligned phase change material layers and methods of making and using same
US9178141B2 (en) 2006-04-04 2015-11-03 Micron Technology, Inc. Memory elements using self-aligned phase change material layers and methods of manufacturing same
KR100868321B1 (ko) * 2006-04-14 2008-11-11 재단법인서울대학교산학협력재단 다중 비트 상변화 메모리 소자의 단위 셀
US7554144B2 (en) 2006-04-17 2009-06-30 Macronix International Co., Ltd. Memory device and manufacturing method
US7928421B2 (en) 2006-04-21 2011-04-19 Macronix International Co., Ltd. Phase change memory cell with vacuum spacer
US8129706B2 (en) * 2006-05-05 2012-03-06 Macronix International Co., Ltd. Structures and methods of a bistable resistive random access memory
US7608848B2 (en) * 2006-05-09 2009-10-27 Macronix International Co., Ltd. Bridge resistance random access memory device with a singular contact structure
KR100782482B1 (ko) 2006-05-19 2007-12-05 삼성전자주식회사 ＧｅＢｉＴｅ막을 상변화 물질막으로 채택하는 상변화 기억 셀, 이를 구비하는 상변화 기억소자, 이를 구비하는 전자 장치 및 그 제조방법
US7423300B2 (en) 2006-05-24 2008-09-09 Macronix International Co., Ltd. Single-mask phase change memory element
KR100748557B1 (ko) * 2006-05-26 2007-08-10 삼성전자주식회사 상변화 메모리 장치
US7820997B2 (en) * 2006-05-30 2010-10-26 Macronix International Co., Ltd. Resistor random access memory cell with reduced active area and reduced contact areas
US7732800B2 (en) * 2006-05-30 2010-06-08 Macronix International Co., Ltd. Resistor random access memory cell with L-shaped electrode
JP4437297B2 (ja) * 2006-06-22 2010-03-24 エルピーダメモリ株式会社 半導体記憶装置及び半導体記憶装置の製造方法
US7696506B2 (en) 2006-06-27 2010-04-13 Macronix International Co., Ltd. Memory cell with memory material insulation and manufacturing method
US7785920B2 (en) * 2006-07-12 2010-08-31 Macronix International Co., Ltd. Method for making a pillar-type phase change memory element
US7442603B2 (en) * 2006-08-16 2008-10-28 Macronix International Co., Ltd. Self-aligned structure and method for confining a melting point in a resistor random access memory
US7560723B2 (en) 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US7772581B2 (en) 2006-09-11 2010-08-10 Macronix International Co., Ltd. Memory device having wide area phase change element and small electrode contact area
KR100810615B1 (ko) * 2006-09-20 2008-03-06 삼성전자주식회사 고온 상전이 패턴을 구비한 상전이 메모리소자 및 그제조방법
US7504653B2 (en) 2006-10-04 2009-03-17 Macronix International Co., Ltd. Memory cell device with circumferentially-extending memory element
US7510929B2 (en) * 2006-10-18 2009-03-31 Macronix International Co., Ltd. Method for making memory cell device
US7863655B2 (en) 2006-10-24 2011-01-04 Macronix International Co., Ltd. Phase change memory cells with dual access devices
US7388771B2 (en) 2006-10-24 2008-06-17 Macronix International Co., Ltd. Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
US7527985B2 (en) * 2006-10-24 2009-05-05 Macronix International Co., Ltd. Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas
US20080094885A1 (en) * 2006-10-24 2008-04-24 Macronix International Co., Ltd. Bistable Resistance Random Access Memory Structures with Multiple Memory Layers and Multilevel Memory States
US20080128675A1 (en) * 2006-11-30 2008-06-05 Michele Magistretti Phase change memory cell having a tapered microtrench
US20080137400A1 (en) * 2006-12-06 2008-06-12 Macronix International Co., Ltd. Phase Change Memory Cell with Thermal Barrier and Method for Fabricating the Same
US7476587B2 (en) * 2006-12-06 2009-01-13 Macronix International Co., Ltd. Method for making a self-converged memory material element for memory cell
US7682868B2 (en) 2006-12-06 2010-03-23 Macronix International Co., Ltd. Method for making a keyhole opening during the manufacture of a memory cell
US7473576B2 (en) * 2006-12-06 2009-01-06 Macronix International Co., Ltd. Method for making a self-converged void and bottom electrode for memory cell
US7697316B2 (en) * 2006-12-07 2010-04-13 Macronix International Co., Ltd. Multi-level cell resistance random access memory with metal oxides
US7903447B2 (en) * 2006-12-13 2011-03-08 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
US8344347B2 (en) * 2006-12-15 2013-01-01 Macronix International Co., Ltd. Multi-layer electrode structure
KR20080057094A (ko) * 2006-12-19 2008-06-24 삼성전자주식회사 상변화 메모리 소자와 그 제조 및 동작 방법
US7718989B2 (en) 2006-12-28 2010-05-18 Macronix International Co., Ltd. Resistor random access memory cell device
US7515461B2 (en) * 2007-01-05 2009-04-07 Macronix International Co., Ltd. Current compliant sensing architecture for multilevel phase change memory
US7440315B2 (en) 2007-01-09 2008-10-21 Macronix International Co., Ltd. Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell
US7433226B2 (en) 2007-01-09 2008-10-07 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell
US7663135B2 (en) 2007-01-31 2010-02-16 Macronix International Co., Ltd. Memory cell having a side electrode contact
US7535756B2 (en) 2007-01-31 2009-05-19 Macronix International Co., Ltd. Method to tighten set distribution for PCRAM
US7619311B2 (en) 2007-02-02 2009-11-17 Macronix International Co., Ltd. Memory cell device with coplanar electrode surface and method
US7701759B2 (en) * 2007-02-05 2010-04-20 Macronix International Co., Ltd. Memory cell device and programming methods
US7483292B2 (en) * 2007-02-07 2009-01-27 Macronix International Co., Ltd. Memory cell with separate read and program paths
US7463512B2 (en) * 2007-02-08 2008-12-09 Macronix International Co., Ltd. Memory element with reduced-current phase change element
US8115213B2 (en) 2007-02-08 2012-02-14 Phoseon Technology, Inc. Semiconductor light sources, systems, and methods
US8138028B2 (en) * 2007-02-12 2012-03-20 Macronix International Co., Ltd Method for manufacturing a phase change memory device with pillar bottom electrode
US8008643B2 (en) * 2007-02-21 2011-08-30 Macronix International Co., Ltd. Phase change memory cell with heater and method for fabricating the same
US7619237B2 (en) * 2007-02-21 2009-11-17 Macronix International Co., Ltd. Programmable resistive memory cell with self-forming gap
US7956344B2 (en) * 2007-02-27 2011-06-07 Macronix International Co., Ltd. Memory cell with memory element contacting ring-shaped upper end of bottom electrode
US7786461B2 (en) * 2007-04-03 2010-08-31 Macronix International Co., Ltd. Memory structure with reduced-size memory element between memory material portions
US8610098B2 (en) 2007-04-06 2013-12-17 Macronix International Co., Ltd. Phase change memory bridge cell with diode isolation device
US7755076B2 (en) * 2007-04-17 2010-07-13 Macronix International Co., Ltd. 4F2 self align side wall active phase change memory
US7569844B2 (en) * 2007-04-17 2009-08-04 Macronix International Co., Ltd. Memory cell sidewall contacting side electrode
US7483316B2 (en) * 2007-04-24 2009-01-27 Macronix International Co., Ltd. Method and apparatus for refreshing programmable resistive memory
KR100922392B1 (ko) * 2007-05-04 2009-10-19 삼성전자주식회사 상변화 메모리 소자 및 그 형성 방법
US7888719B2 (en) * 2007-05-23 2011-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory structures
JPWO2008149605A1 (ja) * 2007-06-04 2010-08-19 日本電気株式会社 抵抗変化素子およびこれを備えた半導体装置
US8410607B2 (en) * 2007-06-15 2013-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory structures
KR100911473B1 (ko) * 2007-06-18 2009-08-11 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
US8237149B2 (en) * 2007-06-18 2012-08-07 Samsung Electronics Co., Ltd. Non-volatile memory device having bottom electrode
US8513637B2 (en) 2007-07-13 2013-08-20 Macronix International Co., Ltd. 4F2 self align fin bottom electrodes FET drive phase change memory
TWI402980B (zh) 2007-07-20 2013-07-21 Macronix Int Co Ltd 具有緩衝層之電阻式記憶結構
US7884342B2 (en) * 2007-07-31 2011-02-08 Macronix International Co., Ltd. Phase change memory bridge cell
US7729161B2 (en) * 2007-08-02 2010-06-01 Macronix International Co., Ltd. Phase change memory with dual word lines and source lines and method of operating same
US9018615B2 (en) 2007-08-03 2015-04-28 Macronix International Co., Ltd. Resistor random access memory structure having a defined small area of electrical contact
US7678606B2 (en) * 2007-09-04 2010-03-16 Industrial Technology Research Institute Phase change memory device and fabrication method thereof
US8178386B2 (en) 2007-09-14 2012-05-15 Macronix International Co., Ltd. Phase change memory cell array with self-converged bottom electrode and method for manufacturing
US7642125B2 (en) 2007-09-14 2010-01-05 Macronix International Co., Ltd. Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
KR101162760B1 (ko) * 2007-10-08 2012-07-05 삼성전자주식회사 상변화 메모리 소자 및 그의 제조방법
US7551473B2 (en) * 2007-10-12 2009-06-23 Macronix International Co., Ltd. Programmable resistive memory with diode structure
US7919766B2 (en) 2007-10-22 2011-04-05 Macronix International Co., Ltd. Method for making self aligning pillar memory cell device
US7804083B2 (en) * 2007-11-14 2010-09-28 Macronix International Co., Ltd. Phase change memory cell including a thermal protect bottom electrode and manufacturing methods
US7646631B2 (en) 2007-12-07 2010-01-12 Macronix International Co., Ltd. Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
US7639527B2 (en) 2008-01-07 2009-12-29 Macronix International Co., Ltd. Phase change memory dynamic resistance test and manufacturing methods
US7879643B2 (en) 2008-01-18 2011-02-01 Macronix International Co., Ltd. Memory cell with memory element contacting an inverted T-shaped bottom electrode
US7879645B2 (en) * 2008-01-28 2011-02-01 Macronix International Co., Ltd. Fill-in etching free pore device
US8158965B2 (en) 2008-02-05 2012-04-17 Macronix International Co., Ltd. Heating center PCRAM structure and methods for making
US7855435B2 (en) * 2008-03-12 2010-12-21 Qimonda Ag Integrated circuit, method of manufacturing an integrated circuit, and memory module
US7852658B2 (en) 2008-03-14 2010-12-14 Micron Technology, Inc. Phase change memory cell with constriction structure
US20090239334A1 (en) * 2008-03-20 2009-09-24 International Business Machines Corporation Electrode formed in aperture defined by a copolymer mask
US8084842B2 (en) 2008-03-25 2011-12-27 Macronix International Co., Ltd. Thermally stabilized electrode structure
US7579210B1 (en) * 2008-03-25 2009-08-25 Ovonyx, Inc. Planar segmented contact
US8030634B2 (en) 2008-03-31 2011-10-04 Macronix International Co., Ltd. Memory array with diode driver and method for fabricating the same
US7825398B2 (en) 2008-04-07 2010-11-02 Macronix International Co., Ltd. Memory cell having improved mechanical stability
US7791057B2 (en) 2008-04-22 2010-09-07 Macronix International Co., Ltd. Memory cell having a buried phase change region and method for fabricating the same
US8077505B2 (en) 2008-05-07 2011-12-13 Macronix International Co., Ltd. Bipolar switching of phase change device
US7701750B2 (en) * 2008-05-08 2010-04-20 Macronix International Co., Ltd. Phase change device having two or more substantial amorphous regions in high resistance state
TWI426604B (zh) * 2008-06-03 2014-02-11 Higgs Opl Capital Llc 相變化記憶裝置及其製造方法
WO2009152108A2 (en) * 2008-06-10 2009-12-17 Advanced Technology Materials, Inc. GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRISTALLINITY
US8415651B2 (en) 2008-06-12 2013-04-09 Macronix International Co., Ltd. Phase change memory cell having top and bottom sidewall contacts
US8134857B2 (en) 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
US7932506B2 (en) 2008-07-22 2011-04-26 Macronix International Co., Ltd. Fully self-aligned pore-type memory cell having diode access device
US8467236B2 (en) 2008-08-01 2013-06-18 Boise State University Continuously variable resistor
US7903457B2 (en) 2008-08-19 2011-03-08 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US7772583B2 (en) * 2008-08-21 2010-08-10 Micron Technology, Inc. Memory devices and methods of forming the same
US20100051896A1 (en) * 2008-09-02 2010-03-04 Samsung Electronics Co., Ltd. Variable resistance memory device using a channel-shaped variable resistance pattern
US7719913B2 (en) 2008-09-12 2010-05-18 Macronix International Co., Ltd. Sensing circuit for PCRAM applications
IT1391864B1 (it) * 2008-09-30 2012-01-27 St Microelectronics Rousset Cella di memoria resistiva e metodo per la fabbricazione di una cella di memoria resistiva
US8324605B2 (en) 2008-10-02 2012-12-04 Macronix International Co., Ltd. Dielectric mesh isolated phase change structure for phase change memory
US8586962B2 (en) * 2008-10-06 2013-11-19 Samsung Electronics Co., Ltd. Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters
US7897954B2 (en) 2008-10-10 2011-03-01 Macronix International Co., Ltd. Dielectric-sandwiched pillar memory device
US8097870B2 (en) * 2008-11-05 2012-01-17 Seagate Technology Llc Memory cell with alignment structure
US8036014B2 (en) * 2008-11-06 2011-10-11 Macronix International Co., Ltd. Phase change memory program method without over-reset
US8664689B2 (en) 2008-11-07 2014-03-04 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions
US8907316B2 (en) 2008-11-07 2014-12-09 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
US7869270B2 (en) 2008-12-29 2011-01-11 Macronix International Co., Ltd. Set algorithm for phase change memory cell
US8093661B2 (en) * 2009-01-07 2012-01-10 Macronix International Co., Ltd. Integrated circuit device with single crystal silicon on silicide and manufacturing method
US8089137B2 (en) 2009-01-07 2012-01-03 Macronix International Co., Ltd. Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
KR20100082604A (ko) * 2009-01-09 2010-07-19 삼성전자주식회사 가변저항 메모리 장치 및 그의 형성 방법
US8107283B2 (en) 2009-01-12 2012-01-31 Macronix International Co., Ltd. Method for setting PCRAM devices
US8030635B2 (en) 2009-01-13 2011-10-04 Macronix International Co., Ltd. Polysilicon plug bipolar transistor for phase change memory
US8064247B2 (en) 2009-01-14 2011-11-22 Macronix International Co., Ltd. Rewritable memory device based on segregation/re-absorption
US8933536B2 (en) 2009-01-22 2015-01-13 Macronix International Co., Ltd. Polysilicon pillar bipolar transistor with self-aligned memory element
US8678612B2 (en) 2009-04-14 2014-03-25 Phoseon Technology, Inc. Modular light source
US8653737B2 (en) 2009-04-14 2014-02-18 Phoseon Technology, Inc. Controller for semiconductor lighting device
US8084760B2 (en) 2009-04-20 2011-12-27 Macronix International Co., Ltd. Ring-shaped electrode and manufacturing method for same
US8173987B2 (en) 2009-04-27 2012-05-08 Macronix International Co., Ltd. Integrated circuit 3D phase change memory array and manufacturing method
US8097871B2 (en) 2009-04-30 2012-01-17 Macronix International Co., Ltd. Low operational current phase change memory structures
US7933139B2 (en) 2009-05-15 2011-04-26 Macronix International Co., Ltd. One-transistor, one-resistor, one-capacitor phase change memory
US8350316B2 (en) 2009-05-22 2013-01-08 Macronix International Co., Ltd. Phase change memory cells having vertical channel access transistor and memory plane
US7968876B2 (en) 2009-05-22 2011-06-28 Macronix International Co., Ltd. Phase change memory cell having vertical channel access transistor
US8809829B2 (en) 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
US8406033B2 (en) 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
US8363463B2 (en) 2009-06-25 2013-01-29 Macronix International Co., Ltd. Phase change memory having one or more non-constant doping profiles
US8238149B2 (en) 2009-06-25 2012-08-07 Macronix International Co., Ltd. Methods and apparatus for reducing defect bits in phase change memory
US8138056B2 (en) 2009-07-03 2012-03-20 International Business Machines Corporation Thermally insulated phase change material memory cells with pillar structure
US8198619B2 (en) 2009-07-15 2012-06-12 Macronix International Co., Ltd. Phase change memory cell structure
US8110822B2 (en) 2009-07-15 2012-02-07 Macronix International Co., Ltd. Thermal protect PCRAM structure and methods for making
US7894254B2 (en) 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
US8064248B2 (en) 2009-09-17 2011-11-22 Macronix International Co., Ltd. 2T2R-1T1R mix mode phase change memory array
US8178387B2 (en) 2009-10-23 2012-05-15 Macronix International Co., Ltd. Methods for reducing recrystallization time for a phase change material
US8465172B2 (en) 2009-12-17 2013-06-18 Phoseon Technology, Inc. Lighting module with diffractive optical element
KR101617381B1 (ko) * 2009-12-21 2016-05-02 삼성전자주식회사 가변 저항 메모리 장치 및 그 형성 방법
KR20110076394A (ko) * 2009-12-29 2011-07-06 삼성전자주식회사 상변화 메모리 장치
KR20110090583A (ko) * 2010-02-04 2011-08-10 삼성전자주식회사 상변화 메모리 장치 및 그 형성 방법
US8669697B2 (en) 2010-03-11 2014-03-11 Phoseon Technology, Inc. Cooling large arrays with high heat flux densities
KR101709323B1 (ko) 2010-04-23 2017-02-22 삼성전자주식회사 가변 저항 메모리 소자 및 그 제조 방법
US8729521B2 (en) 2010-05-12 2014-05-20 Macronix International Co., Ltd. Self aligned fin-type programmable memory cell
US8591078B2 (en) 2010-06-03 2013-11-26 Phoseon Technology, Inc. Microchannel cooler for light emitting diode light fixtures
US8310864B2 (en) 2010-06-15 2012-11-13 Macronix International Co., Ltd. Self-aligned bit line under word line memory array
US8395935B2 (en) 2010-10-06 2013-03-12 Macronix International Co., Ltd. Cross-point self-aligned reduced cell size phase change memory
US8497705B2 (en) 2010-11-09 2013-07-30 Macronix International Co., Ltd. Phase change device for interconnection of programmable logic device
US8467238B2 (en) 2010-11-15 2013-06-18 Macronix International Co., Ltd. Dynamic pulse operation for phase change memory
US9357592B2 (en) 2010-11-18 2016-05-31 Phoseon Technology, Inc. Light source temperature monitor and control
US8518811B2 (en) 2011-04-08 2013-08-27 Infineon Technologies Ag Schottky diodes having metal gate electrodes and methods of formation thereof
US9293197B2 (en) 2011-08-15 2016-03-22 Lockheed Martin Corporation Reconfigurable phase change material masks for electro-optical compressive sensing
US8932900B2 (en) 2011-08-24 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Phase change memory and method of fabricating same
US8872137B2 (en) 2011-09-15 2014-10-28 Phoseon Technology, Inc. Dual elliptical reflector with a co-located foci for curing optical fibers
US9126432B2 (en) 2011-09-20 2015-09-08 Phoseon Technology, Inc. Differential Ultraviolet curing using external optical elements
JP6017573B2 (ja) 2011-10-12 2016-11-02 フォセオン テクノロジー， インコーポレイテッドＰｈｏｓｅｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 光ファイバーを硬化するための共同設置焦点を有する多重光収集とレンズの組合せ
US8823279B2 (en) 2011-10-27 2014-09-02 Phoseon Technology, Inc. Smart FET circuit
US8932901B2 (en) 2011-10-31 2015-01-13 Macronix International Co., Ltd. Stressed phase change materials
US8931928B2 (en) 2011-11-01 2015-01-13 Phoseon Technology, Inc. Removable window frame for lighting module
US8987700B2 (en) 2011-12-02 2015-03-24 Macronix International Co., Ltd. Thermally confined electrode for programmable resistance memory
US8851715B2 (en) 2012-01-13 2014-10-07 Phoseon Technology, Inc. Lamp ventilation system
US8888336B2 (en) 2012-02-29 2014-11-18 Phoseon Technology, Inc. Air deflectors for heat management in a lighting module
US8678622B2 (en) 2012-04-27 2014-03-25 Phoseon Technology, Inc. Wrap-around window for lighting module
KR102117124B1 (ko) 2012-04-30 2020-05-29 엔테그리스, 아이엔씨. 유전체 물질로 중심-충전된 상 변화 합금을 포함하는 상 변화 메모리 구조체
CN102810637A (zh) * 2012-09-13 2012-12-05 中国科学院上海微系统与信息技术研究所 用于替代dram及flash的相变存储单元及其制作方法
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure
US9340446B1 (en) 2013-02-04 2016-05-17 Lockheed Martin Corporation Optical apparatus and method of forming a gradient index device
US9548449B2 (en) * 2013-06-25 2017-01-17 Intel Corporation Conductive oxide random access memory (CORAM) cell and method of fabricating same
US8872149B1 (en) * 2013-07-30 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. RRAM structure and process using composite spacer
US9336879B2 (en) 2014-01-24 2016-05-10 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9159412B1 (en) 2014-07-15 2015-10-13 Macronix International Co., Ltd. Staggered write and verify for phase change memory
US10437083B1 (en) 2014-10-20 2019-10-08 Lockheed Martin Corporation Individually addressable infrared mask array
US9672906B2 (en) 2015-06-19 2017-06-06 Macronix International Co., Ltd. Phase change memory with inter-granular switching
US9969647B2 (en) 2016-05-17 2018-05-15 Lockheed Martin Energy, Llc Glass composites having a gradient index of refraction and methods for production thereof
US9908808B1 (en) 2016-08-18 2018-03-06 Lockheed Martin Corporation Ternary glass materials with low refractive index variability
US10483201B1 (en) * 2018-10-26 2019-11-19 Nanya Technology Corporation Semiconductor structure and method for manufacturing the same
US10950784B2 (en) * 2019-06-07 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM with a barrier layer

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845533A (en) * 1986-08-22 1989-07-04 Energy Conversion Devices, Inc. Thin film electrical devices with amorphous carbon electrodes and method of making same
JPH07114260B2 (ja) * 1989-11-23 1995-12-06 財団法人韓国電子通信研究所 コップ状のポリシリコン貯蔵電極を有するスタック構造のｄｒａｍセル，およびその製造方法
US5536947A (en) * 1991-01-18 1996-07-16 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom
US5534711A (en) * 1991-01-18 1996-07-09 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5534712A (en) * 1991-01-18 1996-07-09 Energy Conversion Devices, Inc. Electrically erasable memory elements characterized by reduced current and improved thermal stability
KR940001426B1 (ko) * 1991-03-27 1994-02-23 삼성전자 주식회사 고집적 반도체 메모리장치 및 그 제조방법
US5391511A (en) * 1992-02-19 1995-02-21 Micron Technology, Inc. Semiconductor processing method of producing an isolated polysilicon lined cavity and a method of forming a capacitor
JP3566743B2 (ja) * 1993-12-13 2004-09-15 Ｔｄｋ株式会社 光記録媒体
KR0151196B1 (ko) * 1994-01-12 1998-10-01 문정환 반도체 메모리장치의 제조방법
US6420725B1 (en) * 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US5789758A (en) * 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US5555537A (en) * 1995-06-30 1996-09-10 International Business Machines Corporation Optical data storage system with multiple write-once phase-change recording layers
US5686337A (en) * 1996-01-11 1997-11-11 Vanguard International Semiconductor Corporation Method for fabricating stacked capacitors in a DRAM cell
JP3707797B2 (ja) * 1996-03-11 2005-10-19 松下電器産業株式会社 光学的情報記録媒体とその製造方法ならびに記録再生消去方法
US5789277A (en) * 1996-07-22 1998-08-04 Micron Technology, Inc. Method of making chalogenide memory device
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US5933365A (en) * 1997-06-19 1999-08-03 Energy Conversion Devices, Inc. Memory element with energy control mechanism
US7173317B1 (en) * 1998-11-09 2007-02-06 Micron Technology, Inc. Electrical and thermal contact for use in semiconductor devices
US6507061B1 (en) * 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7872908B2 (en) 2005-02-18 2011-01-18 Samsung Electronics, Co., Ltd. Phase change memory devices and fabrication methods thereof
US7599216B2 (en) 2005-02-18 2009-10-06 Samsung Electronics Co., Ltd. Phase change memory devices and fabrication methods thereof
CN1983660B (zh) * 2005-12-15 2010-05-26 尔必达存储器株式会社 非易失存储元件的制造方法
US7692272B2 (en) 2006-01-19 2010-04-06 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
US7723717B2 (en) 2006-08-22 2010-05-25 Elpida Memory, Inc. Semiconductor memory device and fabrication method thereof
CN101183681B (zh) * 2006-11-16 2011-01-19 旺宏电子股份有限公司 用于提升保存能力的双稳态阻抗随机存取存储器结构
CN101257087B (zh) * 2007-02-14 2010-06-09 旺宏电子股份有限公司 具有填充侧壁存储元件的相变化存储单元及其制造方法
CN102024838B (zh) * 2008-02-05 2012-11-14 旺宏电子股份有限公司 一种包含凹陷部位电极的集成电路
CN101728482B (zh) * 2008-10-24 2011-12-07 中芯国际集成电路制造(上海)有限公司 相变半导体器件的制造方法及相变半导体器件
CN101964394B (zh) * 2009-07-24 2012-10-17 中芯国际集成电路制造(上海)有限公司 一种制作相变存储单元相变单元的方法
CN102420287A (zh) * 2010-09-24 2012-04-18 旺宏电子股份有限公司 电流相对于由电极定义的轴横向流动的相变化只读存储器
US9082954B2 (en) 2010-09-24 2015-07-14 Macronix International Co., Ltd. PCRAM with current flowing laterally relative to axis defined by electrodes
CN102629662A (zh) * 2011-02-03 2012-08-08 旺宏电子股份有限公司 形成pcram自对准位线方法及自对准深刻蚀方法
CN102629662B (zh) * 2011-02-03 2014-09-10 旺宏电子股份有限公司 形成pcram自对准位线方法及自对准深刻蚀方法
CN107275282A (zh) * 2011-03-17 2017-10-20 美光科技公司 半导体结构及形成半导体结构的方法
CN103839919A (zh) * 2012-11-23 2014-06-04 中芯国际集成电路制造(上海)有限公司 电极的制造方法、熔丝装置及其制造方法
WO2015007108A1 (zh) * 2013-07-19 2015-01-22 中国科学院上海微系统与信息技术研究所 相变存储单元及其制备方法
CN105098071A (zh) * 2015-07-08 2015-11-25 宁波时代全芯科技有限公司 制造相变化记忆体的方法
CN105098071B (zh) * 2015-07-08 2018-01-05 江苏时代全芯存储科技有限公司 制造相变化记忆体的方法

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DE10297191B4 (de) 2009-07-23
DE10297191T5 (de) 2004-10-07
CN100379046C (zh) 2008-04-02
KR20040033017A (ko) 2004-04-17
US20030047762A1 (en) 2003-03-13

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