CN1550568B - 制造装置和发光装置 - Google Patents

制造装置和发光装置 Download PDF

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Publication number
CN1550568B
CN1550568B CN2004100384332A CN200410038433A CN1550568B CN 1550568 B CN1550568 B CN 1550568B CN 2004100384332 A CN2004100384332 A CN 2004100384332A CN 200410038433 A CN200410038433 A CN 200410038433A CN 1550568 B CN1550568 B CN 1550568B
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China
Prior art keywords
mentioned
chamber
vapor deposition
deposition source
light
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Expired - Fee Related
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CN2004100384332A
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English (en)
Chinese (zh)
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CN1550568A (zh
Inventor
山崎舜平
桑原秀明
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to CN201110391657.1A priority Critical patent/CN102676998B/zh
Publication of CN1550568A publication Critical patent/CN1550568A/zh
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • AHUMAN NECESSITIES
    • A63SPORTS; GAMES; AMUSEMENTS
    • A63CSKATES; SKIS; ROLLER SKATES; DESIGN OR LAYOUT OF COURTS, RINKS OR THE LIKE
    • A63C17/00Roller skates; Skate-boards
    • A63C17/22Wheels for roller skates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • AHUMAN NECESSITIES
    • A63SPORTS; GAMES; AMUSEMENTS
    • A63CSKATES; SKIS; ROLLER SKATES; DESIGN OR LAYOUT OF COURTS, RINKS OR THE LIKE
    • A63C17/00Roller skates; Skate-boards
    • A63C17/04Roller skates; Skate-boards with wheels arranged otherwise than in two pairs
    • A63C17/06Roller skates; Skate-boards with wheels arranged otherwise than in two pairs single-track type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/302Details of OLEDs of OLED structures
    • H10K2102/3023Direction of light emission
    • H10K2102/3031Two-side emission, e.g. transparent OLEDs [TOLED]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8426Peripheral sealing arrangements, e.g. adhesives, sealants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • H10K50/8445Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/8722Peripheral sealing arrangements, e.g. adhesives, sealants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN2004100384332A 2003-04-25 2004-04-26 制造装置和发光装置 Expired - Fee Related CN1550568B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110391657.1A CN102676998B (zh) 2003-04-25 2004-04-26 制造装置和发光装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP121313/03 2003-04-25
JP121313/2003 2003-04-25
JP2003121313A JP4493926B2 (ja) 2003-04-25 2003-04-25 製造装置

Related Child Applications (1)

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CN201110391657.1A Division CN102676998B (zh) 2003-04-25 2004-04-26 制造装置和发光装置

Publications (2)

Publication Number Publication Date
CN1550568A CN1550568A (zh) 2004-12-01
CN1550568B true CN1550568B (zh) 2012-01-11

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CN201110391657.1A Expired - Fee Related CN102676998B (zh) 2003-04-25 2004-04-26 制造装置和发光装置

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US (3) US8034182B2 (enExample)
JP (1) JP4493926B2 (enExample)
KR (1) KR101061388B1 (enExample)
CN (2) CN1550568B (enExample)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3877613B2 (ja) * 2002-03-05 2007-02-07 三洋電機株式会社 有機エレクトロルミネッセンス表示装置の製造方法
US6858464B2 (en) * 2002-06-19 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light emitting device
US7211454B2 (en) * 2003-07-25 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate
US6962648B2 (en) * 2003-09-15 2005-11-08 Global Silicon Net Corp. Back-biased face target sputtering
KR100552975B1 (ko) * 2003-11-22 2006-02-15 삼성에스디아이 주식회사 능동 매트릭스 유기전계발광표시장치 및 그의 제조방법
US8884845B2 (en) * 2003-10-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Display device and telecommunication system
JP2005283922A (ja) * 2004-03-29 2005-10-13 Tdk Corp 画像表示装置
US20050279285A1 (en) * 2004-06-10 2005-12-22 Fuji Photo Film Co., Ltd. Phosphor sheet manufacturing apparatus
US20050282308A1 (en) * 2004-06-22 2005-12-22 Albrecht Uhlig Organic electroluminescent display device and method of producing the same
JP4545504B2 (ja) * 2004-07-15 2010-09-15 株式会社半導体エネルギー研究所 膜形成方法、発光装置の作製方法
JP2006164737A (ja) * 2004-12-07 2006-06-22 Sharp Corp 表示素子、若しくはそれを備えた表示パネル及び表示装置
JP4384109B2 (ja) * 2005-01-05 2009-12-16 三星モバイルディスプレイ株式會社 蒸着システム用蒸着源の駆動軸及びこれを具備した蒸着システム
JP4442558B2 (ja) 2005-01-06 2010-03-31 三星モバイルディスプレイ株式會社 蒸発源の加熱制御方法,蒸発源の冷却制御方法および蒸発源の制御方法
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
KR100623730B1 (ko) * 2005-03-07 2006-09-14 삼성에스디아이 주식회사 증발원 어셈블리 및 이를 구비한 증착 장치
JP4694429B2 (ja) * 2005-07-11 2011-06-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4789551B2 (ja) * 2005-09-06 2011-10-12 株式会社半導体エネルギー研究所 有機el成膜装置
JP4974504B2 (ja) * 2005-10-13 2012-07-11 株式会社半導体エネルギー研究所 成膜装置、発光装置の作製方法
US20070145895A1 (en) * 2005-10-14 2007-06-28 Matsushita Electric Industrial Co., Ltd. Light emitting apparatus, exposure apparatus, and method for manufacturing light emitting apparatus
US20070084717A1 (en) * 2005-10-16 2007-04-19 Makoto Nagashima Back-biased face target sputtering based high density non-volatile caching data storage
JP4736757B2 (ja) * 2005-12-01 2011-07-27 セイコーエプソン株式会社 発光装置および電子機器
US20070205096A1 (en) * 2006-03-06 2007-09-06 Makoto Nagashima Magnetron based wafer processing
US8454810B2 (en) 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
TWI324491B (en) * 2006-08-16 2010-05-01 Au Optronics Corp Low-reflection self-illumination unit display pixel structure
JP4337852B2 (ja) 2006-08-30 2009-09-30 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置とその製造方法及び電子機器
WO2008069259A1 (en) * 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device
KR100842183B1 (ko) * 2006-12-29 2008-06-30 두산메카텍 주식회사 증발원 스캐닝 장치
JPWO2008102694A1 (ja) * 2007-02-21 2010-05-27 株式会社アルバック 表示装置、表示装置用の製造装置、及び表示装置の製造方法
US7973473B2 (en) * 2007-03-02 2011-07-05 Global Oled Technology Llc Flat panel OLED device having deformable substrate
KR101457653B1 (ko) * 2007-03-22 2014-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막장치, 제조장치, 성막방법, 및 발광장치의 제조방법
KR101563237B1 (ko) * 2007-06-01 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조장치 및 발광장치 제작방법
KR20090041316A (ko) * 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막 방법 및 발광 장치의 제작 방법
US8153201B2 (en) 2007-10-23 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light-emitting device, and evaporation donor substrate
KR20090041314A (ko) * 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판 및 발광장치의 제조방법
US8425974B2 (en) * 2007-11-29 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Evaporation donor substrate and method for manufacturing light-emitting device
KR101689519B1 (ko) * 2007-12-26 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법
US8080811B2 (en) 2007-12-28 2011-12-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing evaporation donor substrate and light-emitting device
WO2009099002A1 (en) 2008-02-04 2009-08-13 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing light-emitting device
JP5416987B2 (ja) 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
WO2009107548A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
US20090218219A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing Apparatus
JP5238544B2 (ja) * 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US8182863B2 (en) 2008-03-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
JP5217564B2 (ja) * 2008-03-28 2013-06-19 カシオ計算機株式会社 発光装置の製造方法
US7993945B2 (en) * 2008-04-11 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
US7932112B2 (en) * 2008-04-14 2011-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
US7968353B2 (en) * 2008-04-15 2011-06-28 Global Solar Energy, Inc. Apparatus and methods for manufacturing thin-film solar cells
US8409672B2 (en) * 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
JP5159689B2 (ja) * 2008-04-25 2013-03-06 株式会社半導体エネルギー研究所 発光装置の作製方法
KR20090130559A (ko) * 2008-06-16 2009-12-24 삼성모바일디스플레이주식회사 이송 장치 및 이를 구비하는 유기물 증착 장치
JP5469950B2 (ja) * 2008-08-08 2014-04-16 株式会社半導体エネルギー研究所 発光装置の作製方法
US8486736B2 (en) * 2008-10-20 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
JP5291607B2 (ja) * 2008-12-15 2013-09-18 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2010163637A (ja) * 2009-01-13 2010-07-29 Tokyo Electron Ltd 成膜装置及び成膜方法
CN102414863B (zh) * 2009-05-01 2015-06-03 卡帝瓦公司 用于有机蒸汽印刷的方法和设备
JP4831841B2 (ja) 2009-07-10 2011-12-07 三菱重工業株式会社 真空蒸着装置及び方法
KR101015357B1 (ko) 2009-08-20 2011-02-16 삼성모바일디스플레이주식회사 정전파괴 방지구조를 갖는 마스터 글래스
JP5473576B2 (ja) * 2009-12-10 2014-04-16 住友化学株式会社 シリコン膜およびリチウム二次電池
TW201200948A (en) * 2010-06-22 2012-01-01 Au Optronics Corp Pixel structure and method for manufacturing the same
JP5412389B2 (ja) * 2010-09-03 2014-02-12 株式会社ジャパンディスプレイ 液晶表示装置の製造方法
DE102010055285A1 (de) * 2010-12-21 2012-06-21 Solarion Ag Photovoltaik Verdampferquelle, Verdampferkammer und Beschichtungsverfahren
JP5312697B2 (ja) * 2011-01-18 2013-10-09 シャープ株式会社 蒸着装置及び蒸着方法
KR101233629B1 (ko) * 2011-04-13 2013-02-15 에스엔유 프리시젼 주식회사 대용량 박막형성용 증착장치
US9055654B2 (en) 2011-12-22 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
KR101810046B1 (ko) * 2012-01-19 2017-12-19 삼성디스플레이 주식회사 기상 증착 장치 및 기상 증착 방법
US9991463B2 (en) * 2012-06-14 2018-06-05 Universal Display Corporation Electronic devices with improved shelf lives
JP6160614B2 (ja) * 2012-07-04 2017-07-12 東京エレクトロン株式会社 基板処理装置
JP6181358B2 (ja) * 2012-07-25 2017-08-16 東京エレクトロン株式会社 ベーク処理システム及び有機el素子の有機機能膜の積層体の製造方法
KR102064391B1 (ko) 2012-08-31 2020-01-10 삼성디스플레이 주식회사 기판 처리 장치
CN104756178B (zh) 2012-11-05 2018-05-25 索尼半导体解决方案公司 光学单元、制造光学单元的方法以及电子装置
KR20140077625A (ko) * 2012-12-14 2014-06-24 삼성디스플레이 주식회사 유기물 증착 장치
KR102108361B1 (ko) * 2013-06-24 2020-05-11 삼성디스플레이 주식회사 증착률 모니터링 장치, 이를 구비하는 유기층 증착 장치, 증착률 모니터링 방법, 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
JP2015060780A (ja) * 2013-09-20 2015-03-30 株式会社東芝 表示装置の製造方法及び製造システム
CN104637972A (zh) * 2013-11-08 2015-05-20 昆山工研院新型平板显示技术中心有限公司 一种高分辨率的有机发光显示器及其制造方法
CN104851901B (zh) * 2014-02-18 2018-03-30 昆山工研院新型平板显示技术中心有限公司 一种高分辨率的oled显示装置及其制造方法
WO2015125046A1 (en) 2014-02-19 2015-08-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and peeling method
CN103938161A (zh) * 2014-04-29 2014-07-23 京东方科技集团股份有限公司 基板蒸镀装置和蒸镀方法
US10056574B2 (en) * 2015-02-19 2018-08-21 Sharp Kabushiki Kaisha Organic EL display device
JP6685675B2 (ja) * 2015-09-07 2020-04-22 株式会社Joled 有機el素子、それを用いた有機el表示パネル、及び有機el表示パネルの製造方法
CN105506548B (zh) * 2016-03-01 2018-05-25 京东方科技集团股份有限公司 一种掩膜板修复装置、修复方法及蒸镀系统
JP6371354B2 (ja) * 2016-09-30 2018-08-08 本田技研工業株式会社 被膜形成装置
CN106941111A (zh) * 2017-03-14 2017-07-11 合肥鑫晟光电科技有限公司 阵列基板、阵列基板的制造方法以及显示装置
KR102126702B1 (ko) * 2017-09-29 2020-06-25 주식회사 엘지화학 유기전자소자의 봉지 방법
KR102697922B1 (ko) * 2019-01-09 2024-08-22 삼성전자주식회사 원자층 증착 장치 및 이를 이용한 박막 형성 방법
EP3947767A4 (en) * 2019-04-04 2023-05-17 Lunar Resources, Inc. METHOD AND SYSTEM FOR VACUUM VAPOR DEPOSITION OF FUNCTIONAL MATERIALS IN SPACE
KR102145879B1 (ko) * 2019-06-07 2020-08-19 한국생산기술연구원 미세 금속 마스크 세정 공정 분석용 모사 마스크, 이를 이용한 분석 방법 및 그 제조 방법
WO2021150524A1 (en) 2020-01-22 2021-07-29 Applied Materials, Inc. In-line monitoring of oled layer thickness and dopant concentration
WO2021150525A1 (en) 2020-01-22 2021-07-29 Applied Materials, Inc. In-line monitoring of oled layer thickness and dopant concentration
CN111321376B (zh) * 2020-03-26 2022-05-03 武汉华星光电半导体显示技术有限公司 蒸镀机
KR20220097068A (ko) 2020-12-31 2022-07-07 엘지디스플레이 주식회사 발광 표시 장치
CN114645250B (zh) * 2022-03-25 2024-07-19 无锡极电光能科技有限公司 蒸镀设备、钙钛矿电池蒸镀方法以及钙钛矿电池
AT18402U1 (de) * 2023-09-20 2025-02-15 Ev Group E Thallner Gmbh Verfahren und Vorrichtung zur Erzeugung von großflächigen dünnen Schichten an Substraten mittels chemisch reaktiver Sprühbeschichtung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1307143A (zh) * 2000-01-21 2001-08-08 李京熙 薄膜的制作方法及制作装置
JP2002080961A (ja) * 2000-06-22 2002-03-22 Matsushita Electric Works Ltd 真空蒸着装置及び真空蒸着方法

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US636726A (en) * 1898-03-04 1899-11-07 Percy J Hindmarsh Seat-post.
US2435997A (en) 1943-11-06 1948-02-17 American Optical Corp Apparatus for vapor coating of large surfaces
FR2244014B1 (enExample) 1973-09-17 1976-10-08 Bosch Gmbh Robert
US4023523A (en) 1975-04-23 1977-05-17 Xerox Corporation Coater hardware and method for obtaining uniform photoconductive layers on a xerographic photoreceptor
US4187801A (en) 1977-12-12 1980-02-12 Commonwealth Scientific Corporation Method and apparatus for transporting workpieces
JPS59156996A (ja) * 1983-02-23 1984-09-06 Koito Mfg Co Ltd 化合物結晶膜の製造方法とその装置
DE3330092A1 (de) 1983-08-20 1985-03-07 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum einstellen der oertlichen verdampfungsleistung an verdampfern in vakuumaufdampfprozessen
US4897290A (en) 1986-09-26 1990-01-30 Konishiroku Photo Industry Co., Ltd. Method for manufacturing the substrate for liquid crystal display
JPS63282190A (ja) * 1987-05-12 1988-11-18 Agency Of Ind Science & Technol 分子線結晶成長装置
JPH03111578A (ja) * 1989-06-29 1991-05-13 Toshiba Corp 薄膜形成方法及び薄膜形成装置
US5258325A (en) 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5429884A (en) 1992-01-17 1995-07-04 Pioneer Electronic Corporation Organic electroluminescent element
JP3257056B2 (ja) * 1992-09-04 2002-02-18 石川島播磨重工業株式会社 真空蒸着装置
JPH06228740A (ja) * 1993-01-29 1994-08-16 Sony Corp 真空蒸着装置
JP3407281B2 (ja) * 1993-04-09 2003-05-19 石川島播磨重工業株式会社 連続真空蒸着装置
KR100291971B1 (ko) 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법
US5578404A (en) * 1995-03-27 1996-11-26 Polaroid Corporation Process for the production of liquid crystal display
US5532102A (en) * 1995-03-30 1996-07-02 Xerox Corporation Apparatus and process for preparation of migration imaging members
JPH09143697A (ja) * 1995-11-20 1997-06-03 Ishikawajima Harima Heavy Ind Co Ltd 真空蒸着装置の成膜方法および真空蒸着装置
JP3539125B2 (ja) 1996-04-18 2004-07-07 東レ株式会社 有機電界発光素子の製造方法
US5817366A (en) 1996-07-29 1998-10-06 Tdk Corporation Method for manufacturing organic electroluminescent element and apparatus therefor
JP2848371B2 (ja) 1997-02-21 1999-01-20 日本電気株式会社 有機el表示装置及びその製造方法
JPH1161386A (ja) * 1997-08-22 1999-03-05 Fuji Electric Co Ltd 有機薄膜発光素子の成膜装置
US6090207A (en) * 1998-04-02 2000-07-18 Neocera, Inc. Translational target assembly for thin film deposition system
US6284052B2 (en) 1998-08-19 2001-09-04 Sharp Laboratories Of America, Inc. In-situ method of cleaning a metal-organic chemical vapor deposition chamber
US6053981A (en) * 1998-09-15 2000-04-25 Coherent, Inc. Effusion cell and method of use in molecular beam epitaxy
JP3782245B2 (ja) 1998-10-28 2006-06-07 Tdk株式会社 有機el表示装置の製造装置及び製造方法
US6214631B1 (en) 1998-10-30 2001-04-10 The Trustees Of Princeton University Method for patterning light emitting devices incorporating a movable mask
JP4312289B2 (ja) * 1999-01-28 2009-08-12 キヤノンアネルバ株式会社 有機薄膜形成装置
ATE374263T1 (de) * 1999-03-29 2007-10-15 Antec Solar Energy Ag Vorrichtung und verfahren zur beschichtung von substraten durch aufdampfen mittels eines pvd- verfahrens
JP4187367B2 (ja) 1999-09-28 2008-11-26 三洋電機株式会社 有機発光素子、その製造装置およびその製造方法
JP2003513169A (ja) 1999-10-22 2003-04-08 カート・ジェイ・レスカー・カンパニー 真空で基板を被覆するための方法及び装置
TW490714B (en) * 1999-12-27 2002-06-11 Semiconductor Energy Lab Film formation apparatus and method for forming a film
US6244212B1 (en) 1999-12-30 2001-06-12 Genvac Aerospace Corporation Electron beam evaporation assembly for high uniform thin film
US6237529B1 (en) 2000-03-03 2001-05-29 Eastman Kodak Company Source for thermal physical vapor deposition of organic electroluminescent layers
JP4785269B2 (ja) 2000-05-02 2011-10-05 株式会社半導体エネルギー研究所 発光装置の作製方法及び成膜装置のクリーニング方法
US20020011205A1 (en) 2000-05-02 2002-01-31 Shunpei Yamazaki Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
US7517551B2 (en) * 2000-05-12 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light-emitting device
EP1167566B1 (en) 2000-06-22 2011-01-26 Panasonic Electric Works Co., Ltd. Apparatus for and method of vacuum vapor deposition
SG125891A1 (en) * 2000-09-08 2006-10-30 Semiconductor Energy Lab Light emitting device, method of manufacturing thesame, and thin film forming apparatus
JP4632337B2 (ja) * 2000-11-10 2011-02-16 株式会社半導体エネルギー研究所 発光装置
US6641674B2 (en) * 2000-11-10 2003-11-04 Helix Technology Inc. Movable evaporation device
TW522577B (en) 2000-11-10 2003-03-01 Semiconductor Energy Lab Light emitting device
CN101397649B (zh) * 2001-02-01 2011-12-28 株式会社半导体能源研究所 能够将有机化合物沉积在衬底上的装置
JP4704605B2 (ja) * 2001-05-23 2011-06-15 淳二 城戸 連続蒸着装置、蒸着装置及び蒸着方法
JP2003115379A (ja) * 2001-09-28 2003-04-18 Kiko Kenji Kagi Kofun Yugenkoshi 有機el素子製造装置
JP3662874B2 (ja) * 2001-10-26 2005-06-22 松下電工株式会社 真空蒸着装置及び真空蒸着方法
SG149680A1 (en) 2001-12-12 2009-02-27 Semiconductor Energy Lab Film formation apparatus and film formation method and cleaning method
US6815723B2 (en) 2001-12-28 2004-11-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
KR100467805B1 (ko) * 2002-01-22 2005-01-24 학교법인연세대학교 박막두께분포를 조절 가능한 선형 및 평면형 증발원
SG126714A1 (en) 2002-01-24 2006-11-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
TWI258317B (en) 2002-01-25 2006-07-11 Semiconductor Energy Lab A display device and method for manufacturing thereof
SG113448A1 (en) 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
EP1369499A3 (en) 2002-04-15 2004-10-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
TWI336905B (en) 2002-05-17 2011-02-01 Semiconductor Energy Lab Evaporation method, evaporation device and method of fabricating light emitting device
US20040035360A1 (en) 2002-05-17 2004-02-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
US20030221620A1 (en) 2002-06-03 2003-12-04 Semiconductor Energy Laboratory Co., Ltd. Vapor deposition device
JP4286496B2 (ja) * 2002-07-04 2009-07-01 株式会社半導体エネルギー研究所 蒸着装置及び薄膜作製方法
US20040040504A1 (en) 2002-08-01 2004-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
TWI277363B (en) 2002-08-30 2007-03-21 Semiconductor Energy Lab Fabrication system, light-emitting device and fabricating method of organic compound-containing layer
US20040123804A1 (en) 2002-09-20 2004-07-01 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and manufacturing method of light emitting device
JP2004107762A (ja) * 2002-09-20 2004-04-08 Ulvac Japan Ltd 蒸発源及びこれを用いた薄膜形成装置
JP2004149846A (ja) * 2002-10-30 2004-05-27 Sony Corp 蒸着装置および有機電界発光素子の製造装置
US7211461B2 (en) 2003-02-14 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
JP4463492B2 (ja) 2003-04-10 2010-05-19 株式会社半導体エネルギー研究所 製造装置
JP4090039B2 (ja) * 2003-04-16 2008-05-28 トッキ株式会社 蒸着装置における蒸発源

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1307143A (zh) * 2000-01-21 2001-08-08 李京熙 薄膜的制作方法及制作装置
JP2002080961A (ja) * 2000-06-22 2002-03-22 Matsushita Electric Works Ltd 真空蒸着装置及び真空蒸着方法

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