CN1528014A - 芯片引线框架 - Google Patents

芯片引线框架 Download PDF

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Publication number
CN1528014A
CN1528014A CNA028140656A CN02814065A CN1528014A CN 1528014 A CN1528014 A CN 1528014A CN A028140656 A CNA028140656 A CN A028140656A CN 02814065 A CN02814065 A CN 02814065A CN 1528014 A CN1528014 A CN 1528014A
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China
Prior art keywords
substrate
small pieces
compound
gap
lead
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Pending
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CNA028140656A
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English (en)
Inventor
市川金也
志
熊本高志
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Intel Corp
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Intel Corp
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Publication of CN1528014A publication Critical patent/CN1528014A/zh
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Abstract

通过设置具有端的小片布置于基片表面上以便在小片和基片形成腔并在端和基片之间形成接触部来制造芯片引线框架。将化合物设置到所述表面，从而该化合物进入腔并在上基片表面上形成一层。该层可以向组件提供足够的刚性，其中可以蚀刻基片来制造引线框架。还揭示的是一种装置，它可以包括小片、引线框架和可以在引线框架上形成一层并填充和引线框架之间的腔的连续网络。

Description

芯片引线框架
背景
本发明涉及芯片引线框架。
半导体芯片可以包括每个都小于一微米的数百万个晶体管电路以及芯片与外部元件之间的多个连接。
现在参考图1A，称作倒装片的结构便于装配紧凑，减少板上轨迹的尺寸并使具有改进的电和热性能的大量输入输出(I/O)连接更短、更多。该倒装片通常包括具有焊料突出部110的小片101，这些突出部将导电元件和基片114互连。
电连接倒装片的一种方法使用受控塌陷(controlled-collapse)芯片连接技术(C4)。首先，将焊料突出部110施用到小片101、基片114或这两者的有效侧上的垫片上。接着，使焊料突出部110熔化并使其流动，确保突出部完全弄湿到小片110或基片114上相应的垫片上。通常将粘着的焊剂施用到待结合的一个或两个表面上。随后将小片101和基片114的承载焊剂的表面设置成彼此接触并对齐。通过将小片101和基片组加热到或高于焊料的熔点来进行回流。芯片和基片组合上的焊料和被熔化的焊料的表面张力使得相应的垫片彼此自对准。
随后将结合的组冷却以使焊料固化。焊料互连的最终高度取决于熔化的焊料柱的表面张力和芯片重量之间的平衡。在去焊操作中，从小片101和基片114的组合上除去任何焊剂和焊剂残余。
最后，将环氧底层填料(underfill)116施用到小片101的下表面和基片114的上表面之间，围绕并支撑焊料柱。显著地增加了小片基片焊料连接的可靠性和耐疲劳性。底层填料116用来承载芯片和基片之间热膨胀系数(CTE)的差异引起的热负荷的有效部分，而非所有转移通过焊料柱的热负荷。底层填料116还可以使焊料柱彼此电绝缘。
对于某些集成电路应用，需要使用尽可能薄的基片或薄膜以使最终芯片的电性能最佳。通常，薄基片或薄膜包括聚合材料，厚度为0.05到0.5mm。薄基片的更短的通路有助于减少基片内的回路电感。这些薄基片是柔性的并很难贴附焊料球或焊针(pin)。在不加固的形式中，它们易受安装和去除操作期间的损坏的影响。一种当前的作法是采用粘合层112将合适材料的刚性块(block)111结合到基片的外围。
贴附的刚性块111增强整个组。再参考图1B，刚性块111的支撑杆109可以用来加固个别的元件，诸如通过路由选择引线204贴附到倒装片垫片206的表面网格阵列(land grid array)(LGA)垫片230。
还已知使环氧粘合剂上行到小片101的侧部以形成加固小片的环氧嵌条(例如，参见美国专利No.6049124)。
附图概述
图1A和1B是常规倒装片结构的示意图。
图2A，2B，2C，2D，2E，2F和2G是封装小片101和基片105的第一过程。
图3A，3B，3C，3D和3E共同是封装小片101和基片105的第二过程的一组剖面图和示意图。
图4A，4B，4C和4D是利用半蚀刻的引线框架105封装小片的过程的示意图。
图5A，5B和5C是封装小片101的过程的示意图。该过程包括将基片105切成小方格。
图6是封装小片101的过程的流程图。
图7是路由选择引线和垫片的示意图。
图8是球形网格阵列的示意图。
具体实施方式
参考图2A到2G中的实例，将小片101贴附到基片105，随后封装形成组件160(图2G)。
参考图2A，首先将小片101相对于基片105定向。小片101可以是承载集成电路的芯片或硅片。基片105可以是诸如铜的导电材料。例如，基片105可以是连续的铜，或其它导电材料的箔。铜箔可以按重量计至少包括约40％、50％、70％、90％或99％的铜。铜的低电阻改善了所制造的倒装片组件的性能。
基片可以是至少小于约22、20、18或16nm厚。
基片105可以具有用于设置无源部件103的绝缘垫片108，无源部件103诸如降低电源回路电感的去耦电容器。
小片101包括用于形成和基片105的互连的焊料突出部110。焊料组合物的实例包括高温突出部(例如，97％的Pb和3％的Sn)、易熔性突出部(63％Pb和37％Sn)、螺栓突出部(100％Au)和导电环氧树脂。突出部可以由上述实例的组合形成，例如，镀有易熔性突出部的高温突出部。
突出部110可以在小片的下表面上排列成矩形阵列。例如，突出部可以具有约11密耳(279.4微米)的间距。
参考图2B和图6，将小片101置于基片105上(610)，以使突出部110和基片接触。使用热量将焊料突出部110贴附到基片105(620)。
在某些实施例中，使用热压结合来以热脉冲局部加热小片101。例如，结合过程可以施用2gf/突出部和230℃的热脉冲，时间为3秒。这种过程就不需要倒装片垫片设置焊料阻挡屏障(solder resist dam)来接收焊料突出部110。
在其它实施例中，使用回流炉(furnace)来熔化焊料突出部并将它们结合到基片105。基片可以包括焊料阻挡屏障来容纳每个突出部的回流焊料。见下文，使用插入层300来形成焊料阻挡屏障的描述。
在小片贴附之后，小片101的下表面和基片的上表面形成间隙115，它由从焊料突出部110形成的接触部横跨。例如，该间隙可以小于约120、100、80或50微米。
参考图2C和2D，基片105置于下铸模120和上铸模130之间(630)。铸模的上部130和/或下部120可以包括任何合适的材料，包括各种金属、塑料、陶瓷和组合物。铸模可以具有足够的刚性，从而在压力下将组合物注入模腔145时能保持其形状。
上铸模130可以承载释放薄膜125。该释放薄膜125可以是热阻薄膜，它将小片101的上表面102和上铸模130分开。为了保持上表面102不受环氧树脂污染，释放薄膜125可以用来防止小片101的上表面102出现溢料(flash)。一个实例性的释放薄膜由Apic Yamada Corp.，Japan的Film Assisted MoldingEquipment(Fame)提供。该释放薄膜可以包括基于碳氟化合物的聚合物并具有0.5到5密耳的厚度。
铸模可以包括较小的气孔，例如在滑槽(runner)140对面，以允许在由注入的组合物取代时使空气从腔145逸出。
参考图2E，将可以形成聚合物的组合物注入到连接模腔145的滑槽140。该组合物可以在压力下递送，例如，在热塑性状态中从辅助室通过滑槽和铸口(gate)进入腔145。在注入后，可以允许组合物设定和形成聚合物网络150，它在小片101和基片105之间的腔之间延伸。设定过程可以包括在固化(curing)条件下保温。
通过形成聚合物网络，它使小片101设有底层填料并延伸到没有由小片或其它部件(诸如无源部件103)覆盖的基片的所有区域，组件160被刚性化并被加固，尽管没有刚性支撑部件(诸如刚性框架111)。
例如，可以通过合适的铸模(120和130)设计来改变聚合物网络的延伸。因此，在某些实施例中，聚合物网络可以形成不同高度(即，在垂直于基片105的方向上)的层，例如，直到下小片表面、到上小片表面或两者之间的205、40％、50％、60％或80％处。
同样地，通过合适的小片设计，还可以改变沿基片105平面的聚合物网络的延伸。因此，在某些实施例中，聚合物网络至少延伸到无源部件103或贴附到基片105的其它部件、到置于同一基片105上的另一个小片101或到基片105的周边。聚合物网络可以(额外地或可供选择地)延伸一距离(平行于基片105的平面)远离小片周边，这至少是小片101的高度，即从相对基片105的小片下表面到小片上表面的距离。
可以使用各种组合物来形成底层填料和刚性化组件。化合物可以是树脂或其它形成聚合物的化合物。聚合物通常是不导电的。连续的刚性网络是通过设定化合物形成的邻接结构。该结构向基片105(或引线框架210，如下所述)提供刚性。
树脂包括结晶树脂和多官能团类型的树脂。其它树脂，诸如BMI、聚酯和热塑性材料的使用也是合适的。
在某些实施例中，化合物是环氧树脂，诸如填充玻璃的环氧树脂。所使用的环氧树脂可以具有高强度和良好的热性质，包括对由集成芯片在操作期间产生的高温的抵抗力。此外，未固化的(uncured)液态环氧树脂可以具有相对较低的粘性以便注入芯片和基片表面之间的空间。例如，环氧树脂可以具有165℃时小于约20、15、12、10、8Pa·s的熔融粘度。
表1列出实例性的环氧树脂配方的某些属性。这种属性是非限制性的且可以单独或结合其它属性出现。
通常，未使用且未填充的环氧树脂和硅片或加强的塑料基片之间的热膨胀(CTE)系数的差异将是很重要的。给定倒装片组将经受的工作温度的宽范围，需要将被结合材料的CTE配合得尽可能接近，由此使任何诱发的热应力最小。相反地，太多的填充物将引起环氧树脂配方的粘性增加到一点，此时它阻止流入芯片110的上部和基片120的相应的表面之间的间隙。因此，如果填充物比未使用的环氧树脂具有更高的模数(modulus)，则它用来增加未固化的环氧树脂配方的硬度，这导致最终的芯片组的更高的刚性。因此，一种包括约80％重量的二氧化硅微粒的填充的环氧树脂被认为是理想的配方。
表1
填充物材料填充物形状填充物含量平均粒度最大粒度固化条件涡流胶凝时间热硬度熔融粘度玻璃转化温度CTE低于TgCTE高于Tg比重导热性弯曲模量抗弯强度体积电阻率吸水性 二氧化硅都是球形80重量％4nm12nm165℃/120sec165℃/120sec时180°cm，6.9N/mm2165℃时30sec165℃/120sec时85165℃时10Pas145℃14ppm56ppm25℃时1.880.63W/m*C25℃时13700N/mm225℃时120N/mm21.00E+14 ohm*m 25℃0.5％
还希望具有环氧树脂配方，它在升高的温度时相对较快地固化，从而可以以一生产率制造芯片组，但在室温或甚至稍许升高的温度时具有相对较长的适用期(potlife)且在注入铸模之前混合的环氧树脂和催化剂在供应线上不固化。优选的树脂具有在165℃时120秒的固化曲线(cure profile)。根据可供选择的树脂配方的属性，可以指定不同的固化曲线来提供合适的结果。还可以考虑可以在模塑操作中使用热塑性的树脂，它不具有固化温度而是在升高的温度时熔化且在冷却时固化。
利用表1中指定的类型和配方的环氧树脂，将如下进行模塑过程。首先，或者将铸模和包含其中未完成的芯片组加热到165℃，或者将铸模保持在165℃并将未完成的芯片组插入其中。接着，在约1-5MPa的压力下通过滑槽140将环氧树脂注入铸模。可以将树脂预加热到中间温度以降低树脂的粘性并促进树脂转移建模过程。一旦将合适量的环氧树脂注入模腔，则在至少120秒内将铸模保持在165℃以使环氧树脂完全固化。
参考图2F和6，在固化之后，将铸模分开并移出组件160(650)，如图2F所示。通常，在小片较热时将模制的倒装片移出，从而小片可以立即再用于制造另一个组；但是可以理解，在将模制的倒装片移出之前可以允许小片固化。
参考图2G，修整组件160以在导电基片105上提供环氧树脂包围的且充以底层填料的小片101。
参考图3A到3E，以上过程的变化用于制造倒装片-基片的组件160。薄基片105由绝缘阻挡层300涂覆。将该绝缘层蚀刻或将其修改来切除区域310，它可以接收部件的焊料球或其它接触部。绝缘层300具有较高的电阻，即它由不导电的材料制成。
参考图3B，小片101置于基片105上，从而小片101上的焊料球110位于被切除的接收器区域310内。当适当加热时，焊料球回流并和基片105形成稳定的电接触。类似地，诸如电容器的无源部件103也通过焊料接触部112连接到基片。
参考图3C，如上所述，小片101形成的组件、无源部件103和基片105在铸模中被包围并由环氧树脂层150涂覆(640)，该环氧树脂层形成连续的刚性支持结构150。
如果在绝缘层300和小片101的下表面之间形成间隙，则环氧树脂层形成的结构可以填充该间隙。
在如图2G和3D所示地形成环氧树脂外壳150后，通过蚀刻(660)修改导电基片105以制造引线框架210。蚀刻660不限于化学蚀刻。例如，可以通过UV-或CO2-高能激光磨蚀、光刻或传统的铜蚀刻工艺进行蚀刻660。
参考图3，蚀刻660留下导电通路204，例如它将每个小片互连110和端230连接。
可以排列端230以便方便地和各种芯片接口样式对接，诸如表面网格阵列(LGA)、球网格阵列(BGA)、针脚网格阵列(PGA)、印刷电路板(PCB)或主板。
参考图7，环氧树脂外壳150提供的刚性和支撑不仅允许使用薄基片105，还允许高密度的C4垫片206和路由选择引线204。例如，两个C4垫片206之间的中心距582可以小于约0.127mm，例如，约.12、.10、.09、.08、.083、.07mm或更小。换句话说，第一个C4垫片和第四个邻近的C4垫片之间的间距581小于约0.35、0.3、0.27、0.25或0.2mm。
随后，将绝缘涂层370施用到被蚀刻的基片上(670)。绝缘化合物可以和用来形成环氧树脂外壳和底层填料的环氧树脂化合物相同或不同。绝缘化合物形成阻挡涂层370，它防止由基片105形成的引线框架的不同导电通路204之间的短路。
在另一种实施中，如图4A所示，使用半蚀刻的基片705。对于具有约18微米厚度的基片，所创建的半蚀刻710约9微米深并由基片705的底层730支持。参考图4B，小片101设置在半蚀刻的基片705上，从而小片突出部110沿半蚀刻基片705的隆起部720形成互连。参考图4C，组件和聚合物组合物接触从而形成固定和加强组件的网络150。参考图4D，随后为了制造引线框架210将半蚀刻基片705的下半部分或基片的底层730移去。
如图2所示的步骤610到670可以对多个小片101并行地进行，例如，如图5所示。参考图5A，多个小片101设置在由基片105组成的面板上。也可以使用基片105的卷、带和其它样式。
参考图5B，整个组件置于铸模内并由环氧树脂封装，从而形成固定的组件410。随后可以蚀刻基片105的下表面(660)来产生引线框架。蚀刻可以包括将基片下表面430上的显示区420暴露给通过光刻模板投射的光。
参考图5C和图6，将基片105切割(680)成分开的单个装置450，它包括小片101和其引线框架210。通常，在切割后，每个单独的装置包括一封装层，它延伸到装置，即引线框架210，的周边。
这里描述的技术不限于上述的实例。
例如，在将小片110放置在铸模中之前可以使用与用于形成封装网络150的组合物相同或不同的组合物将间隙115填充底层填料。通过调整铸模的形状，可以以各种结构制造封装网络150，例如，延伸至少到下铸模表面、至少到上铸模表面，或从上铸模表面到下铸模表面的距离的至少25％、50％、75％或90％。在又一个实例中，如图8所示，封装网络150覆盖上铸模表面。
如上所述，通过这里描述的方法制造的引线框架可以用于各种接口样式中。参考图8，引线框架210连接到BGA，它包括以约1mm的间距840分开的多个焊料突出部830。引线框架210还可以包括额外的特点，诸如连接到小片101的金丝810。组件嵌入覆盖小片上表面102的聚合物组合物，因此，形成额外的封装层150。组件可以具有约1.2mm的高度820。
如图8所示，引线框架210和球830之间的间隙填充了不同于封装层150的底层填料组合物850。绝缘涂层220形成引线框架210和焊料球830之间的电阻层。
其它的实施在权利要求书的范围之内。

Claims (30)

1.一种方法，其特征在于，包括；
a)将具有端子的小片设置于导电基片的上表面上，从而在所述小片和所述基片之间形成腔并在所述端子和所述导电基片之间形成接触部；以及
b)将所述导电基片蚀刻来产生导电引线。
2.如权利要求1所述的方法，其特征在于，所述设置包括(1)将一化合物施用到所述表面上，从而使所述化合物在所述基片上表面上形成一层，以及(2)设定所述化合物来形成连续的网络。
3.如权利要求1所述的方法，其特征在于，所述基片包括由所述基片底层支持的半蚀刻，且所述蚀刻包括除去所述基片底层。
4.如权利要求1所述的方法，其特征在于，所述设置包括设置多个小片，且所述方法还包括切割所述被蚀刻的导电基片。
5.如权利要求2所述的方法，其特征在于，所述化合物填充所述腔。
6.如权利要求2所述的方法，其特征在于，在将所述化合物施用到所述表面上之前，使用底层填料组合物填充所述腔。
7.如权利要求1所述的方法，其特征在于，所述基片上表面由绝缘层覆盖，该绝缘层切除出了适于接收所述端子的区域。
8.如权利要求7所述的方法，其特征在于，在所述绝缘层和所述小片之间形成间隙，且所述方法还包括在b)之前，将化合物施用到与所述小片相对的所述绝缘层的表面上；用所述化合物填充所述间隙；以及设定所述化合物来形成连续的聚合物网络。
9.一种方法，其特征在于，包括：
a)使化合物进入基片和连接到所述基片的小片之间的间隙并在所述基片的上表面上形成一层；以及
b)设定所述化合物来产生在所述间隙内延伸的连续的、刚性的网络并形成环绕所述小片周边的一层。
10.如权利要求9所述的方法，其特征在于，所述层至少延伸到和所述基片相对的所述小片的表面。
11.如权利要求9所述的方法，其特征在于，所述层沿所述基片的平面延伸一距离，该距离至少是从所述小片的下表面到所述小片的上表面的距离。
12.如权利要求9所述的方法，其特征在于，所述层延伸到所述基片的周边。
13.如权利要求9所述的方法，其特征在于，所述施用包括(1)使用铸模包围所述小片和所述上基片表面来形成模腔；以及(2)将所述化合物注入所述模腔。
14.如权利要求13所述的方法，其特征在于，所述铸模的表面包括薄膜。
15.如权利要求13所述的方法，其特征在于，在至少1MPa的压力下注入所述化合物。
16.如权利要求9所述的方法，其特征在于，所述化合物包括环氧树脂。
17.如权利要求9所述的方法，其特征在于，还包括蚀刻所述基片来产生引线，每个引线形成从一个所述接触部到引线端的导电通路。
18.如权利要求17所述的方法，其特征在于，还包括施用绝缘组合物，它填充所述基片的被蚀刻的区域。
19.一种装置，其特征在于，包括：
引线框架，它具有导电引线且有绝缘组合物插在所述引线之间；
小片，它具有通过接触部连接到引线框架的下表面，并通过间隙与所述引线框架的第一区域分开；以及
聚合物组合物，它形成连续的网络，所述网络形成一层，它至少在所述小片下表面之上延伸并覆盖位于所述第一区域之外且不被任何部件占据的所述引线框架表面的区域。
20.如权利要求19所述的装置，其特征在于，还包括至少部分填充所述间隙并覆盖所述第一区域的绝缘层。
21.如权利要求19所述的装置，其特征在于，所述连续的网络至少延伸50％从所述小片下表面到所述小片上表面的距离。
22.如权利要求21所述的装置，其特征在于，所述连续网络形成覆盖所述小片上表面的一层。
23.如权利要求19所述的装置，其特征在于，所述引线具有至少0.10mm的间距。
24.一种装置，其特征在于，包括：
导电基片；
小片，它具有通过接触部连接到所述基片的下表面，并通过间隙与所述基片分开；以及
聚合物组合物，它在所述基片的区域上形成网络，它至少延伸到所述小片下表面上，所述层提供所述装置足够的刚性来在没有支持框架的情况下蚀刻基片期间保持所述接触部完整。
25.如权利要求24所述的装置，其特征在于，所述导电基片包括用电阻组合物填充的蚀刻。
26.如权利要求24所述的装置，其特征在于，所述基片包括半蚀刻。
27.如权利要求24所述的装置，其特征在于，所述层至少延伸到所述小片上表面。
28.一种方法，其特征在于，包括：
a)使化合物进入基片和连接到所述基片的小片之间的间隙并在所述基片的上表面上形成一层；以及
b)设定所述化合物来产生连续的、刚性的网络，它在所述间隙内延伸并形成包围所述小片周边的一层。
29.如权利要求28所述的装置，其特征在于，还包括绝缘层，它至少部分填充间隙并覆盖所述第一区域。
30.如权利要求28所述的装置，其特征在于，所述层延伸到所述引线框架的周边。
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