JP3859654B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP3859654B2 JP3859654B2 JP2004089168A JP2004089168A JP3859654B2 JP 3859654 B2 JP3859654 B2 JP 3859654B2 JP 2004089168 A JP2004089168 A JP 2004089168A JP 2004089168 A JP2004089168 A JP 2004089168A JP 3859654 B2 JP3859654 B2 JP 3859654B2
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- 239000004065 semiconductor Substances 0.000 title claims description 124
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 229920005989 resin Polymers 0.000 claims description 120
- 239000011347 resin Substances 0.000 claims description 120
- 238000007789 sealing Methods 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 54
- 239000008188 pellet Substances 0.000 claims description 18
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000006837 decompression Effects 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000011800 void material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 15
- 239000003822 epoxy resin Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
ことにより前記キャビティーを形成し、前記キャビティー内に前記第1の主表面及び前記樹脂を配置させる。
まず、この発明の製造方法により形成される半導体装置10の構成例について、図1を参照して概略的に説明する。
次に、図1(A)及び(B)を参照して説明した半導体装置10の製造方法について、図2(A)及び(B)及び図3(A)〜(C)を参照して概略的に説明する。
まず、図4及び5を使用して、この発明の製造方法に適用して好適な封止装置(金型)の構成例につき説明する。
(第1の実施の形態)
図6及び7を参照して、第1の実施の形態の封止工程につき説明する。
図8を参照して、第2の実施の形態の封止工程につき説明する。なお、第2の実施の形態に適用される封止装置300は、第1の実施の形態で説明した装置と同一であるのでその構成要素の詳細な説明は省略する。また、第1の実施の形態の封止工程と異なる点は、ステージ220上に載置される樹脂材料の形状のみであるので、同一となる工程については、その詳細な説明を省略する。
11:半導体ウェハ
11a:第1の主表面
11b:第2の主表面
11c:周辺領域
11d:半導体チップ形成領域
12:半導体基板
13:半導体本体
14:素子領域
18:回路素子接続用パッド
20:パッシベーション膜
22:絶縁膜
23:開口部
24:再配線層
26:電極ポスト用パッド
28:電極ポスト
30:配線構造
32:外部端子
34:封止部
40:離型フィルム
40a:樹脂配置領域
50:顆粒状樹脂
50’:溶融樹脂
60:キャビティ
70:樹脂ペレット
100:第1の金型
110:クランプ
110a:支持領域
112:支持アーム
114:開口部
120:第1基部
120a:基板接触領域
200:第2の金型
210:第2基部
212:吸排気孔
220:ステージ
222:ステージ昇降機構
230:吸排気機構
300:封止装置
Claims (9)
- 突起電極が形成された半導体装置形成領域と該半導体装置形成領域を囲む周辺領域とを有する第1の主表面と、該第1の主表面に対向する第2の主表面とを有する半導体ウエハを準備する工程と、
第1及び第2の金型であって、該第1の金型と該第2の金型とによってキャビティーが形成されるように構成された第1及び第2の金型を準備する工程と、
前記第1の主表面側が露出するよう前記半導体ウエハを前記第1の金型側で保持する工程と、
フィルム状部材を前記第2の金型上に配置する工程と、
前記第1及び第2の金型によって前記キャビティーが形成された時における前記突起電極の頂面と前記フィルム状部材との間の距離よりも短くなるような高さを有する樹脂を、前記フィルム状部材の樹脂配置領域上の所定領域供給する工程と、
前記第1の金型及び第2の金型を加熱する工程と、
前記第1の金型と前記第2の金型とを前記フィルム状部材を介して接触させる
ことにより前記キャビティーを形成し、前記キャビティー内に前記第1の主表面及び前記樹脂を配置させる工程と、
前記キャビティー内を減圧するとともに前記キャビティーの容積を減少させることで、前記樹脂が溶融した溶融樹脂を前記第1の主表面に接触させて前記第1の主表面上に封止部を形成する工程と、
を含む半導体装置の製造方法。 - 前記所定領域に供給される樹脂は、顆粒状であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記顆粒状の樹脂は、前記フィルム状部材上に略円錐状に供給されることを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記所定領域に供給される樹脂は、顆粒状樹脂を所定の形状に成形した樹脂ペレットであることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記樹脂ペレットは、顆粒状樹脂を顆粒状態の体積の30%〜70%の範囲の体積に圧縮打錠することによって形成されていることを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記第1の主表面上に封止部を形成する工程において、前記キャビティーの減圧は、前記封止部中にボイドが形成されない所定の真空度まで行い、前記キャビティーの容積の減少を前記キャビティー内が前記所定の真空度に到達した後に停止させることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記キャビティーの容積の減少は、前記第2の金型を構成する可動ステージが前記第1の金型方向へと上昇することによって実行され、上記キャビティーの減圧を開始してから前記キャビティーが前記所定の真空度に到達するまでに要する減圧時間に該可動ステージが上昇する距離を、前記溶融樹脂と前記第1の主表面との間の距離よりも短く設定することを特徴とする請求項6に記載の半導体装置の製造方法。
- 前記第1の主表面上に封止部を形成する工程において減圧される前記キャビティーの真空度は、最大でも133.3Paまで徐々に減圧されることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記所定領域に樹脂を供給する工程から前記封止部を形成する工程は、最大でも5秒間で実施されることを特徴とする請求項1記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004089168A JP3859654B2 (ja) | 2003-07-31 | 2004-03-25 | 半導体装置の製造方法 |
US10/892,269 US6995038B2 (en) | 2003-07-31 | 2004-07-16 | Method of manufacturing semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003284526 | 2003-07-31 | ||
JP2004089168A JP3859654B2 (ja) | 2003-07-31 | 2004-03-25 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005064456A JP2005064456A (ja) | 2005-03-10 |
JP3859654B2 true JP3859654B2 (ja) | 2006-12-20 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004089168A Expired - Lifetime JP3859654B2 (ja) | 2003-07-31 | 2004-03-25 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (1) | US6995038B2 (ja) |
JP (1) | JP3859654B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003243435A (ja) * | 2002-02-14 | 2003-08-29 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US7339275B2 (en) * | 2004-11-22 | 2008-03-04 | Freescale Semiconductor, Inc. | Multi-chips semiconductor device assemblies and methods for fabricating the same |
US7739899B1 (en) * | 2005-04-29 | 2010-06-22 | Iowa State University Research Foundation, Inc. | Leak detection using structure-borne noise |
JP4794354B2 (ja) * | 2006-05-23 | 2011-10-19 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
JP5672652B2 (ja) * | 2009-03-17 | 2015-02-18 | 凸版印刷株式会社 | 半導体素子用基板の製造方法および半導体装置 |
JP5507271B2 (ja) | 2010-01-14 | 2014-05-28 | ラピスセミコンダクタ株式会社 | モールド樹脂封止装置及びモールド方法 |
JP2018019071A (ja) * | 2016-07-14 | 2018-02-01 | 住友ベークライト株式会社 | 半導体装置の製造方法 |
KR20190085847A (ko) * | 2016-11-11 | 2019-07-19 | 신에츠 엔지니어링 가부시키가이샤 | 수지 밀봉 장치 및 수지 밀봉 방법 |
FR3061629A1 (fr) * | 2017-01-03 | 2018-07-06 | Stmicroelectronics (Grenoble 2) Sas | Procede de fabrication d'un capot pour boitier electronique et boitier electronique comprenant un capot |
FR3061630B1 (fr) | 2017-01-03 | 2021-07-09 | St Microelectronics Grenoble 2 | Procede de fabrication d'un capot pour boitier electronique et boitier electronique comprenant un capot |
WO2019189464A1 (ja) * | 2018-03-29 | 2019-10-03 | 日立化成株式会社 | 成形体の製造方法、及び電子部品装置の製造方法 |
JP7200961B2 (ja) * | 2020-03-06 | 2023-01-10 | 味の素株式会社 | 半導体装置の製造方法、及び、樹脂シート |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW421833B (en) * | 1998-07-10 | 2001-02-11 | Apic Yamada Corp | Method of manufacturing semiconductor devices and resin molding machine |
JP4011781B2 (ja) | 1999-03-10 | 2007-11-21 | Towa株式会社 | 半導体ウェーハの樹脂被覆方法 |
US20020110956A1 (en) * | 2000-12-19 | 2002-08-15 | Takashi Kumamoto | Chip lead frames |
-
2004
- 2004-03-25 JP JP2004089168A patent/JP3859654B2/ja not_active Expired - Lifetime
- 2004-07-16 US US10/892,269 patent/US6995038B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2005064456A (ja) | 2005-03-10 |
US6995038B2 (en) | 2006-02-07 |
US20050026418A1 (en) | 2005-02-03 |
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