CN1480556A - 具有射频电源供应单元的双频式真空沉积设备 - Google Patents

具有射频电源供应单元的双频式真空沉积设备 Download PDF

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CN1480556A
CN1480556A CNA031497179A CN03149717A CN1480556A CN 1480556 A CN1480556 A CN 1480556A CN A031497179 A CNA031497179 A CN A031497179A CN 03149717 A CN03149717 A CN 03149717A CN 1480556 A CN1480556 A CN 1480556A
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金东吉
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Weihai dianmei Shiguang electromechanical Co Ltd
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract

本发明提供一种具有一个射频电源供应单元的双频式真空沉积设备。为简化气密腔中的下电极结构，在该双频式真空沉积设备中，只安装一个射频电源供应单元。此外，通过使用一个开关，从射频电源供应单元所输出的射频电源，可交替地供应至上电极及下电极，因此可轻易执行清洁处理及薄膜沉积处理。

Description

具有射频电源供应单元的双频式真空沉积设备
技术领域
本发明是有关于一种制造半导体组件的设备，且较特别的是，有关于一种用来制造薄膜晶体管-液晶显示器(Thin Film Transistor-Liquid CrystalDisplay，简称TFT-LCD)组件的真空沉积设备。
背景技术
在半导体和TFT-LCD组件的制造装置中，一般使用电浆辅助化学气相沉积(Plasma Enhanced-Chemical Vapor Deposition，简称PE-CVD)或溅射装置(sputtering equipment)当成其真空沉积设备(vacuum depositionequipment)，其中当将射频电源(RF power)施加给位于气密腔(chamber)上的一个溅射目标，以及在气密腔之内的一个下电极(bottom electrode)接地之后，会产生电浆(plasma)，以在半导体基底(substrate)上成形一个薄膜。
然而，因在真空环境中，还未使用移除杂质的清洁工具，将在半导体基底表面所吸收的有机杂质(organic contaminations)或湿气(moisture)清除，所以该设备无法应用于成形薄膜之前，在需要保持高度清洁的半导体基底表面的处理。因此，在此例中，广泛地使用一种双频式真空沉积设备，在真空环境中使用一种背面溅射法(back-sputtering method)，清洁半导体基底表面，并且连续地在半导体基底表面上成形薄膜。
图1绘示一个根据公知技艺具有两个射频电源供应单元的双频式真空沉积设备。请参考图1所示，该双频式真空沉积设备包括一个用来沉积(deposition)的射频电源供应单元10，以及一个用来清洁(cleaning)的射频电源供应单元20。在半导体基底40表面上成形薄膜的范例中，气密腔30的下电极34接地，而且由射频电源供应单元10所提供，用来沉积的射频电源施加到一个上电极(upper electrode)32上，以在半导体基底40表面上成形薄膜。反之，在成形薄膜之前执行清洁处理的范例中，由射频电源供应单元20所提供，用来清洁的射频电源施加到气密腔30的下电极34上，而且上电极32接地，以清洁半导体基底40的表面。
然而，上述公知的双频式真空沉积设备具有以下缺点。
首先，因为需要使用一个用来清洁的额外的射频电源供应单元，所以会增加制造设备成本。
接下来，因为在气密腔之内的下电极必须具有所有的功能，包括加热安置在其上的半导体基底功能、提供射频电源功能、以及接地功能等等，因此该下电极结构复杂，造成设备维护和修理的困难度增加，并且恶化设备的可靠度。
发明内容
有鉴于此，本发明提供一种通过只用一个射频电源供应单元，执行清洁和薄膜沉积，因此可降低制造设备成本，以及简化下电极结构的双频式真空沉积设备。
根据本发明一实施例，本发明所提供具有一个射频电源供应单元的双频式真空沉积设备包括：一个用来在半导体组件上成形薄膜的气密腔(airtight chamber)；一个成形在气密腔中的上电极；一个成形在气密腔中，其上安置将接受处理的半导体组件的下电极；一个连接到上电极和下电极的射频电源供应单元；以及一个安装在上电极和下电极以及射频电源供应单元之间的转换开关(conversion switch)。
根据本发明实施例，该半导体组件最好为一个TFT-LCD组件，而且该气密腔最好为电浆辅助化学气相沉积(PE-CVD)或溅射装置的气密腔。
射频电源供应单元最好可包括一个射频电源供应器，以及一个连接到该射频电源供应器的视频调谐器(RF tuner)。
此外，根据本发明实施例，当沉积薄膜时，下电极接地，而且射频电源供应至上电极。当执行清洁动作时，通过切换转换开关，上电极接地，而且射频电源供应至下电极。
根据本发明的双频式真空沉积设备，使用一转换开关，只用一射频电源供应单元，就可执行清洁处理及薄膜沉积处理，借此降低制造设备成本，并且简化气密腔中的下电极结构，因此可提升设备可靠度，并且便利设备维护及修理。
为让本发明的上述和其它目的、特征、和优点能明显易懂，下文特举一较佳实施例，并配合附图，作详细说明如下。
附图说明
图1绘示一个根据公知技术具有两个射频电源供应单元的双频式真空沉积设备的方块图。
图2和图3绘示根据本发明具有一个射频电源供应单元的双频式真空沉积设备的方块图。
图式标记说明：
10：射频电源供应单元    12：视频调谐器
14：射频电源供应器    20：射频电源供应单元
22：视频调谐          24：射频电源供应器
30：气密腔            32：上电极
34：下电极            40：半导体基底
100：气密腔           102：上电极
104：下电极           110：射频电源供应单元
112：视频调谐器       114：射频电源供应器
120：半导体基底       130：转换开关
具体实施方式
以下将参考本发明所附图式，详细说明本发明实施例。
图2和图3绘示根据本发明具有一个射频电源供应单元的双频式真空沉积设备的方块图。
请参考图2所示，根据本发明具有一个射频电源供应单元的双频式真空沉积设备包括：一个用来在半导体组件上成形薄膜的气密腔；一个成形在气密腔中的上电极；一个成形在气密腔中，其上安置将接受处理的半导体组件的下电极；一个连接到上电极和下电极的射频电源供应单元；以及一个安装在上电极和下电极以及射频电源供应单元之间的转换开关。
其中，射频电源供应单元110和开关130执行本发明特点的主要组件。换言之，通过只用一个射频电源供应单元110，取代两个射频电源供应单元，使用转换开关130，交替地执行清洁处理及薄膜沉积处理，借此可降低制造设备成本，简化下电极结构，提升设备可靠度，并且便利设备维护及修理。
图2绘示当在半导体基底120表面上成形薄膜时，让由射频电源供应单元110所输出的射频电源供应至气密腔100中的上电极102，而且下电极104接地的范例。
图3绘示当在真空环境中，清洁半导体基底表面所吸收的有机杂质、湿气、等等时，藉由切换转换开关130，让由射频电源供应单元110所输出的射频电源供应至下电极104，而且上电极102接地的范例。
如上所述，根据本发明，首先使用一转换开关，只用一射频电源供应单元，就可执行清洁处理及薄膜沉积处理，藉此降低制造设备成本。接下来，因可简化气密腔中的下电极结构，所以可提升设备可靠度，并且便利设备维护及修理。
虽然本发明已以一较佳实施例公开如上，然其并非用以限定本发明，任何熟悉此技术者，在不脱离本发明的精神与范围内，当可作些许之更动与润饰，因此本发明的保护范围当视权利要求书所界定者为准。

Claims (6)

1、一种具有一射频电源供应单元的双频式真空沉积设备，其特征在于，包括：
一气密腔，用来在一半导体组件上成形一薄膜；
一上电极，成形在该气密腔中；
一下电极，成形在该气密腔中，其上安置将接受处理的该半导体组件；
一射频电源供应单元，连接到该上电极和该下电极；以及
一转换开关，安装在该上电极和该下电极以及该射频电源供应单元之间。
2、如权利要求1所述的双频式真空沉积设备，其特征在于，该半导体组件为一薄膜晶体管-液晶显示器组件。
3、如权利要求1所述的双频式真空沉积设备，其特征在于，经过该转换开关，该下电极接地，而且该射频电源供应至该上电极。
4、如权利要求1所述的双频式真空沉积设备，其特征在于，经过该转换开关，该上电极接地，而且该射频电源供应至该下电极。
5、如权利要求1所述的双频式真空沉积设备，其特征在于，该射频电源供应单元包括一射频电源供应器，以及一连接到该射频电源供应器的射频调谐器。
6、如权利要求1所述的双频式真空沉积设备，其特征在于，该气密腔为一电浆辅助化学气相沉积或溅射装置的气密腔。
CNB031497179A 2002-08-20 2003-08-06 具有射频电源供应单元的双频式真空沉积设备 Expired - Fee Related CN100347334C (zh)

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Publication number Priority date Publication date Assignee Title
JP4181853B2 (ja) * 2002-11-15 2008-11-19 Ｎｅｃ液晶テクノロジー株式会社 積層膜の複合ウェットエッチング方法
JP4729661B2 (ja) * 2003-07-11 2011-07-20 奇美電子股▲ふん▼有限公司 ヒロックが無いアルミニウム層及びその形成方法
JP4085094B2 (ja) * 2004-02-19 2008-04-30 シャープ株式会社 導電素子基板の製造方法、液晶表示装置の製造方法
US20060024870A1 (en) * 2004-07-27 2006-02-02 Wen-Chun Wang Manufacturing method for low temperature polycrystalline silicon cell
KR101122228B1 (ko) * 2004-10-26 2012-03-19 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
TW200710471A (en) * 2005-07-20 2007-03-16 Samsung Electronics Co Ltd Array substrate for display device
KR101373735B1 (ko) 2007-02-22 2014-03-14 삼성디스플레이 주식회사 신호선의 제조 방법, 박막 트랜지스터 표시판 및 그의 제조방법
JP2009076867A (ja) * 2007-08-30 2009-04-09 Sumitomo Electric Ind Ltd 半導体素子の製造方法
JP2011095451A (ja) * 2009-10-29 2011-05-12 Sony Corp 横電界方式の液晶表示装置
JP5732832B2 (ja) * 2010-01-19 2015-06-10 セントラル硝子株式会社 車両用窓ガラスの製造方法
CN103021934B (zh) * 2012-12-20 2015-10-21 中微半导体设备(上海)有限公司 一种通孔或接触孔的形成方法
TWI614532B (zh) * 2013-05-22 2018-02-11 聖元電子有限公司 具有立體影像顯示功能的顯示器及其製作方法
CN109103140B (zh) * 2018-08-03 2020-10-16 深圳市华星光电半导体显示技术有限公司 一种阵列基板的制作方法
CN114774922B (zh) * 2022-04-01 2022-11-15 肇庆微纳芯材料科技有限公司 一种钼铝金属蚀刻液及其制备方法与蚀刻方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5177404A (zh) * 1974-12-26 1976-07-05 Fuji Photo Film Co Ltd
JP2797307B2 (ja) * 1988-03-11 1998-09-17 住友金属工業株式会社 プラズマプロセス装置
US5162933A (en) * 1990-05-16 1992-11-10 Nippon Telegraph And Telephone Corporation Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium
US5547896A (en) * 1995-02-13 1996-08-20 Harris Corporation Direct etch for thin film resistor using a hard mask
US5772858A (en) * 1995-07-24 1998-06-30 Applied Materials, Inc. Method and apparatus for cleaning a target in a sputtering source
KR100219480B1 (ko) * 1995-11-29 1999-09-01 윤종용 박막트랜지스터 액정표시장치 및 그 제조방법
KR200205996Y1 (ko) * 1996-08-23 2000-12-01 이구택 산화방지제 자동투입장치
US6081308A (en) * 1996-11-21 2000-06-27 Samsung Electronics Co., Ltd. Method for manufacturing liquid crystal display
JPH11297676A (ja) * 1998-04-06 1999-10-29 Kokusai Electric Co Ltd 電子部品製造装置
TW418539B (en) * 1998-05-29 2001-01-11 Samsung Electronics Co Ltd A method for forming TFT in liquid crystal display
KR20000028599A (ko) * 1998-10-28 2000-05-25 윤종용 반도체장치의포토마스크및그제조방법
KR100315648B1 (ko) * 2000-01-21 2001-11-29 정지완 액정표시장치의 게이트 전극용 식각액

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