CN1463040A - 具有从密封树脂暴露出来的散热器的半导体器件 - Google Patents
具有从密封树脂暴露出来的散热器的半导体器件 Download PDFInfo
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- CN1463040A CN1463040A CN03103883A CN03103883A CN1463040A CN 1463040 A CN1463040 A CN 1463040A CN 03103883 A CN03103883 A CN 03103883A CN 03103883 A CN03103883 A CN 03103883A CN 1463040 A CN1463040 A CN 1463040A
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Abstract
一种半导体元件具有一个电路形成表面,其中电极端在该表面的外围部分排列。该半导体元件被模制树脂封装在对应于半导体元件的电极的位置具有开孔的基片上。该半导体元件被安装到所述基片上,处于电路形成表面面对该基片和电极端位于该开孔处的状态,并且与半导体元件的电路形成表面相反的背面从模制树脂暴露出来。由金属片所形成的散热部件被提供在与安装有半导体元件的表面相反的基片表面上。该散热部件的表面从模制树脂暴露出来。
Description
技术领域
本发明一般涉及一种半导体器件,特别涉及散热良好并且能够通过减小布线的直流电阻而有效地提供电能的半导体器件。
背景技术
随着在半导体元件中所形成的I/O端子的数目增加,半导体元件的功率消耗倾向于增加。另外,由于端子数目的增加,半导体器件的封装尺寸也增加。现在具有一种精细间距的球栅阵列(FBGA)型半导体器件,作为被开发用于解决这种问题的半导体封装。
图1为常规精细间距球栅阵列型半导体器件的截面示图。在常规精细间距球栅阵列型半导体器件中,半导体元件1被通过粘合材料2安装在印刷电路板或带状基片3上。半导体元件1的电路端子1a通过接合线4电连接到形成于印刷电路板或带状基片中的接合引线5。半导体元件1和接合线4被模制树脂6封装在印刷电路板或带状基片3上。形成于印刷电路板或带状基片3上的接合引线5和端子连接到作为形成于相对侧上的外部连接端的焊锡球7。
在具有上述结构的精细间距球栅阵列型半导体器件中,从半导体元件1散发的大部分热量被通过模制树脂6的传递散发到半导体器件的外部,或者通过粘合材料2传递到印刷电路板或带状基片3,并且从印刷电路板或带状基片3散发到半导体器件的外部。使用常规BGA(球栅阵列)或PGA(针栅阵列)封装的半导体器件可以被根据封装和半导体芯片的连接方法而分类为带状自动接合(TAB)、线接合和倒装片接合。
另外,半导体芯片的电极分布大体上被分为外围电极分布,其中电极被在半导体芯片的外围上的一行或少数的多行上分布,以及面电极分布,其中电极被分布在半导体芯片的整个表面上。连接方法与电极分布的组合在下文描述。
组合(1):外围电极分布+TAB连接
组合(2):外围电极分布+线接合连接
组合(3):面电极分布+倒装片接合连接
通常,与(3)相比,(1)和(2)可以使电极之间的间距进一步减小。在2002年,可以使用的TAB连接的电极间距大约为40微米,以及根据线接合连接,为40微米(楔形线接合连接)或者60微米(球形线接合连接)。另外,在线接合连接中,视在间距可以被设置为在通过把上述电极以“Z”形结构设置的单行排列时的间距的一半。
另一方面,(3)大约为180微米。尽管半导体元件的电极间距可以根据(1)而减小,但是它需要在电极上提供例如金这样的凸块(凸起),这可能造成用于大半导体元件或低产量半导体元件的成本的增加。另外,半导体元件和基片的组合变为一种,从而缺少多样性。但是,当柔性板被用作为封装的基片时,在此有可以在基片本身上形成接合端的优点。
如果它可以应用于小的高产量的半导体元件,该元件中的布线可以用具有一个或两个导电层的基片来实现,则该半导体器件可以低成本地制造。
由于(2)具有开发角度的灵活性,因此(2)具有可以增加封装基片侧的内部电极间距的优点,并且基片材料的选择范围变宽,以及具有不同电极分布的多个半导体元件可以安装到一个封装基片。
对于基片材料的选择范围的扩展,当需要比(1)更多的大量导电层时,(2)可能具有更多的优点。目前,(2)是一个组合,其具有在成本/性能比方面与(1)相当的地位,并且针对于当通过(1)执行凸块的形成时变得昂贵的半导体元件,作为具有廉价基片的线接合连接的低成本半导体器件,或者使用需要比(1)更高的电性能的多层基片形成电源平面和接地平面的半导体器件。
在(1)或(2)的情况中,由于当执行接合连接时应力被施加到半导体元件的电极,则上述接合电极不能够提供于半导体元件的有源元件上。
由于在(3)的情况中由焊锡等等所制成的凸块形成在半导体元件的电极上,并且通过加热熔化该凸块而把该电极连接到封装基片上,因此当接合时,(3)对电极的应力比根据(1)和(2)的连接更小。因此,用于接合的电极甚至可以位于半导体元件的有源元件上。但是,(3)需要时间进行接合处理,并且粘合材料被填充在半导体元件和封装基片之间,从而保持连接部分的可靠性,从而与(1)和(2)相比增加成本。
如上文所述,(3)的组合与外围电极相比更加有助于多电极结构,并且其被定位为可能具有上述成本问题的一种高级半导体器件。
另外,在常规半导体器件中,半导体元件的连接电极组被连接到例如引线框架或者用于每个电极功能的封装基片的插入物的内部电极组。在半导体器件中,特别针对于商品市场,半导体元件被安装在例如QFP或BGA这样的半导体封装中,并且通过线连接、TAB连接、凸块连接等等而被电连接。从生产质量的观点来看,除了部分凸块连接之外,安装在大部分半导体封装中的半导体元件的电极排列是外围排列,其中用于信号的电极、用于接地的电极、用于内部电源的电极以及用于外部电极的电极相互混合。
在上述结构中,传递来自半导体元件1的热量的模制树脂4、粘合材料2和印刷电路板或带状基片3是由树脂所形成的部件。树脂材料的导热率与金属等等相比非常低。从把来自半导体元件1的热量有效地散发到外部的观点来看,上述仅仅通过树脂部分散热的结构具有效率低的问题。
另外,形成在印刷电路板或带状基片3上的接合引线可以仅仅设置在半导体元件1的外围部分。也就是说,可以设置接合引线5的区域被限于半导体元件1的外围部分,当通过增加端子的数目以及使半导体器件本身小型化而获得高集成度时,这成为一个问题。
另外,从上述成本/性能比的观点来看,由于半导体元件的小型化所产生的新问题对于直接排列来说已经变得显著。随着半导体制造技术的发展,根据大约70%的减小规律,例如ASIC这样的设计规格已经从0.25微米缩小到0.13微米。另外,器件的工作速度增加。
随着这种半导体制造工艺的小型化以及半导体器件的速度增加,考虑到器件延迟时间的时序设计变得复杂。特别是,对于外围电极分布的半导体元件,随着布线的小型化,电阻R增加,导致由于电源的IR降而导致布线部分的RC延迟或者逻辑门延迟这样的问题。类似于上述组合(3),如果面电极分布和倒装片安装连接被使用,这将导致成本增加。
另外,由于例如延长便携式设备的电池寿命的市场要求,当进行低电压工作的尝试时,由于在元件中部的内部电源的电压降而导致误操作的问题已经在安装电极外围分布的元件的半导体器件中变得显著。为了解决这些问题,采取例如增加内部电源电极的数目和接地端的数目或者增加电源/接地层这样的措施,从而通过在半导体元件的设计阶段模拟在半导体元件中的电压降部分以及增强电源而确定。但是,这种措施变为成本增加的因素,例如元件尺寸的增加、在晶片中的有效元件数目的减小或者在元件中的布线层数目的增加。另外,即使采用这种措施,也仅仅可以通过普通的半导体元件制造工艺而形成1-2微米厚的导电层,因此不能够大大地减小直流电阻。
发明内容
本发明的一般目的是提供一种半导体器件,其可以有效地把来自半导体元件的热量散发到封装的外部,并且获得端子的高度集成,而不增加封装尺寸。
本发明的另一个目的是提供一种半导体器件,其成本/性能比优良,并且解决关于电源的IR降的问题。
本发明的另一个目的是提供一种半导体器件,其通过大大减小布线的直流电阻而减小电压降。
为了实现上述目的,根据本发明的一个方面,在此提供一种半导体器件,其中包括:半导体元件,其具有一个电路形成表面,电极端在该表面的外围部分排列,该半导体元件被模制树脂封装在对应于半导体元件的电极的位置具有开孔的基片上;该半导体元件被安装到该基片上,处于电路形成表面面对该基片和电极端位于该开孔处的状态,并且与半导体元件的电路形成表面相反的背面从模制树脂暴露出来;以及由金属片所形成的散热部件被提供在与安装有半导体元件的表面相反的基片表面上,该散热部件的表面从模制树脂暴露出来。
根据本发明,热量直接从半导体元件的背面辐射到空气中。另外,通过具有相对较小厚度的基片和粘合树脂提供金属制成的散热部件,并且热量从散热部件辐射到空气中。因此,由于没有例如模制树脂这样具有较大热阻的树脂材料的散热路径形成在电路形成表面侧以及背面侧上,因此可以实现有效的散热。
在本发明中,金属制成的凸起可以提供在散热部件的暴露表面上。相应地,在半导体器件安装在例如主板这样的安装板上的情况下,通过把提供于散热部件上的金属凸起与安装板的电路图案相接触,可以实现通过金属接触的散热,因此可以有效地把热量从半导体器件散发到外部(安装板)。
在根据本发明的半导体器件中,由金属片所形成的散热片可以附着到半导体元件的背面上,并且散热片的表面可以从模制树脂暴露出来。相应地,由于金属片被提供在半导体元件的背面上,因此半导体元件的热量可以有效地通过金属片散发到周围空气中。
另外,半导体元件的电极端可以沿着半导体元件的电路形成表面的外围侧形成为两行;外侧行的电极端可以连接到形成在开口外侧上的位置处的基片的端子;以及内侧行的电极端可以连接到形成在开口内侧上的位置处的基片的端子。由于例如接合引线这样的端子被形成在安装有半导体元件的基片的相对侧上,因此可以增加提供于半导体元件上的电极端的数目。
在本发明的一个实施例中,该基片可以是带状基片。通过使用该带状基片作为安装有半导体元件的基片,则可以减小整个半导体元件的厚度。
另外,根据本发明,在此提供一种半导体器件,其中包括:第一布线板,其形成在一个基片上,并且具有暴露该基片的表面的一个开口;半导体元件,其位于该开口中,并且具有与电路形成表面相反的背面,该背面被接合到该基片上;接合线,其把形成于第一布线板上的电极连接到设置在半导体元件的电路形成表面的外围部分上的第一电极;第二布线板,其面对半导体元件的电路形成表面,并且具有连接到设置于电路形成表面的中部的第二电极的连接部件;第一外部连接端,其形成在第二布线板上并且电连接到该连接部件;以及第二外部连接端,其形成在第一布线板上并且具有通过第一布线板的布线和接合线电连接到半导体元件的第一电极的第二外部连接电极。
根据上述发明,该外部连接端可以通过第二布线板电连接到半导体元件的第二电极。由于到第二电极的线路与到第一电极的线路相分离,因此到第二电极的线路可以与到第一电极的线路结构不同。
在根据上述发明的半导体器件中,该半导体元件的第一电极可以是用于信号和电源或接地的电极;第二电极可以是用于电源和接地的电极;以及第二电极的排列间距和电极尺寸可以不同于第一电极的排列间距和电极尺寸。
相应地,用于电源和接地的电极的线路的直流电流电阻值可以远小于用于信号电极的直流电流电阻值,并且相对于在半导体元件中部用于电源的电极,可以减小由于直流电流的电流电阻所导致的电压降。
在根据本发明的半导体器件中,第二电极可以沿着在半导体元件的电路形成表面上形成的用于电源或接地的电路线而形成。相应地,通过把形成于第一或第二线路板中的无源元件用作为旁路电容器,可以有效地减小到达电源线或接地线的噪声。
另外,第二线路板的连接部件可以由可热熔的导电材料所制成。第二布线板的连接部件可以由形成为环状的金属所制成。
另外,半导体元件的第二电极可以具有细长的形状,并且第二布线板的连接部件可以由通过沿着第二电极执行跳焊(stitch bonding)而形成的金属线或金属箔所制成。该基片可以由导电材料所制成,并且半导体元件的背面通过导电接合材料接合到该基片上。第一布线板可以是多层布线板,并且半导体元件的第一电极可以通过接合线连接到形成在第一布线板的不同层面中的电极。第二布线板可以是一个多层布线板,并且无源元件可以形成在第一和第二布线板中的至少一个板上。无源元件可以是旁路电容器。半导体元件可以位于形成在该基片中的一个凹陷中;第一布线板可以是一个柔性板;以及该柔性板的电极可以通过TAB连接而连接到该半导体元件的第一电极。
另外,根据本发明,在此提供一种半导体器件,其中包括:半导体元件,其具有设置在电路形成表面的外围部分上第一电极、设置在第一电极形成于该半导体形成表面的一个区域的第二电极、以及连接在第一电极和第二电极之间的金属线;以及电连接到第一电极的外部连接端。
根据上述发明,第一和第二电极可以通过金属线并联到形成于该半导体元件上的电路线。因此,通过把位于半导体器件中央附近的第二电极与形成于该半导体元件上的电路线并行地连接到外部连接端,可以减小直流电阻成份。
在上述发明中,金属线可以通过跳焊而接合到第一和第二电极。另外,该金属线可以通过球焊接合到第一和第二电极。
另外,第一电极可以是用于信号的电极以及用于电源或接地的电极,以及第二电极可以是用于电源或接地的电极。相应地,设置在半导体器件的中部附近用于电源和接地的电极可以与形成于该半导体元件上的电路线并行地连接到外部连接端,从而,可以大大减小到外部连接端的用于电源和接地的电极的线路的直流电流电阻值。
第二电极可以具有比第一电极更大的面积。该半导体元件可以在面向上的状态下安装在一个布线板上;第一电极可以通过金属线连接到该布线板;以及外部连接端可以形成在与安装有半导体元件的表面相反的基片表面上。
另外,导电部件可以被提供在与半导体元件的电路形成表面相对的位置处,并且金属线可以电连接到部分地在第一电极和第二电极之间的导电部件。另外,该半导体元件可以在面向下的状态下安装在布线板上;该第一电极通过倒装片接合连接到该布线板;以及外部连接端形成在与安装有半导体元件的表面相反的基片表面上。
另外,该金属线可以电连接到部分地在第一电极和第二电极之间的导电部件。该半导体元件可以在面向上的状态下安装在引线框架上;该引线框架的引线端可以作为外部连接端;以及第一电极可以通过金属线连接到该引线端。
从下文接合附图的详细描述中,本发明的其它目的、特点和优点将变得更加清楚。
附图说明
图1为精细间距的球栅阵列型常规半导体器件的截面示图;
图2为根据本发明第一实施例的半导体器件的截面示图;
图3为根据本发明第二实施例的半导体器件的截面示图;
图4为从散热器的侧面观看图3中所示的半导体器件的部分透视平面示图;
图5为图4的部分A的放大示图;
图6为根据本发明第三实施例的半导体器件的截面示图;
图7为从散热器的侧面观看图6中所示的半导体器件的部分透视平面示图;
图8为根据本发明第四实施例的半导体器件的截面示图;
图9为根据本发明第五实施例的半导体器件的截面示图;
图10A至10D为示出在半导体元件的电路形成表面上形成的电极分布的平面示图;
图11为根据本发明第六实施例的半导体器件的截面示图;
图12为根据本发明第七实施例的半导体器件的截面示图;
图13为根据本发明第八实施例的半导体器件的截面示图;
图14为根据本发明第九实施例的半导体器件中所用的半导体元件的平面示图;
图15A和15B为示出在半导体元件的绝缘层下提供的电源线或地线的示意图;
图16为根据本发明第九实施例的半导体器件中所用的半导体元件的平面示图;
图17为通过跳焊由一条接合线连接多个电极的一个例子的侧视图;
图18为通过球焊由一条接合线连接多个电极的一个例子的侧视图;
图19为通过柱状凸块和球焊由一条接合线连接多个电极的一个例子的侧视图;
图20为通过柱状凸块和球焊由一条接合线连接多个电极的一个例子的侧视图;
图21为根据本发明第九实施例的半导体器件的截面示图;
图22为根据本发明第十实施例的半导体器件的截面示图;
图23为根据本发明第十一实施例的半导体器件的截面示图;
图24为根据本发明第十二实施例的半导体器件的截面示图;
图25为根据本发明第十三实施例的半导体器件的截面示图;以及
图26为根据本发明第十四实施例的半导体器件的截面示图。
具体实施方式
现在参照附图描述本发明的第一实施例。图2为根据本发明第一实施例的半导体器件的截面示图。在图2中,与图1中所示的部分相同的部分由相同的参考标号所表示,并且将省略对其的描述。
在图2中所示的半导体器件中,半导体器件1以面向下的状态安装到印刷电路板10。也就是说,半导体元件1的电极端1a位于形成在印刷电路板10中的开口10a中,并且半导体元件1通过位于电极端1a内部的一个区域与印刷电路板10之间的一个弹性体11安装在印刷电路板10的开口10a内部的一个区域中。该弹性体11是类似于硅酮或环氧树脂这样具有弹性的粘合树脂。
印刷电路板10包括基片12和设置在基片12上的布线层13,以及半导体元件1安装在与形成有布线层13的表面相反的表面上。连接接合引线和端子的电路图案形成在布线层13中。
安装在印刷电路板10上的半导体元件1被设置为使得电极端1a处于该开口10a内部。因此,电极端1a可以由接合线14通过开口10a连接到形成于布线层13中的接合引线。金属散热器(散热部件)16通过粘合材料15附着在印刷电路板10的开口10a内部的一个区域中。
安装在上述印刷电路板10上的半导体元件被模制树脂6所封装,其背面1b暴露在外部。在此,印刷电路板10的开口10a也被填充有该模制树脂6。另外,该模制树脂6还通过开口10a提供到印刷电路板10的相对侧从而封装接合线14,并且金属散热器16也被封装,使得该金属散热器16的表面暴露在外部。
根据本发明第一实施例的半导体器件能够把来自半导体元件1的热量有效地发散到半导体器件的外部。也就是说,由于半导体元件1的背面1b被暴露在外部,因此可以获得这样一种结构,其中热量通过例如树脂材料这样具有低导热率的材料而发散,并且半导体元件的背面1b可以直接把热量散发到外部。另外,金属散热器16被提供在安装有半导体元件1的印刷电路板10的区域中。由于金属散热器16由具有良好的导热率的金属所制成,因此散热器可以有效地把热量散发到外部。
因此,在根据本发明第一实施例的半导体器件中,从半导体元件1发出的热量可以有效地辐射到外部,这避免温度升高。也就是说,根据本发明第一实施例的半导体器件具有良好的散热特性。
应当指出,在上述结构中,尽管半导体元件1安装在印刷电路板10上,其中布线层13形成于例如BT树脂或玻璃环氧树脂这样的基片12上,可以通过使用用于基片12的由聚酰亚胺、聚酯等等所制成的带状基片而获得印刷电路板10的精细构图,并且可以减小半导体器件的厚度。
下面参照图3给出对本发明第二实施例的描述。图3为根据本发明第二实施例的半导体器件的截面示图。在图3中,与图2中所示的部分相同的部分由相同的参考标号所表示,并且将省略对它的描述。
尽管根据本发明第二实施例的半导体器件具有与根据第一实施例的上述半导体器件相同的散热结构,但是不同之处在于本实施例的结构可以处理半导体元件的端子数目增加的情况。
也就是说,在根据本发明第二实施例的半导体器件中,该半导体元件1的电极端1a被设置为两行,如图3中所示。外部电极端1a通过类似于图2中所示的接合线14连接到形成于布线层13中的接合引线13a(参见图4和图5),以及内部电极端1a连接到形成于基片10的开口10a内部区域中的布线层13的接合引线13b(参见图4和图5)。在此,图4示出从散热器的侧面观看图3中所示的半导体器件的一个表面。在图4中,在半导体元件1的电极端1a和印刷电路板10的接合引线13a和13b之间的连接部分以透明的方式示出。另外,图5为图4的一部分A的放大示图。
如上文所述,在根据本发明第二实施例的半导体器件中,由于接合引线13b被提供在印刷电路板10的开口10a内部的区域中,因此作为整个半导体器件的接合引线的数目增加,并且这可以处理要被安装的半导体元件1的电极端1a的数目增加的情况。因此,即使半导体元件的电极端数目增加,也不需要扩大接合引线的分布面积,这可以实现半导体器件的小型化。
下面参照图6和图7描述本发明第三实施例。图6为根据本发明第三实施例的半导体器件的截面示图。图7为从散热器的侧面观看图6中所示的半导体器件的部分透视平面示图;在图6和7中,与图3和4中所示相同的部分由相同的参考标号所表示,并且将省略对它们的描述。
除了凸块被提供到金属散热器16上之外,根据本发明第三实施例的半导体器件具有与图3中所示根据第二实施例的半导体器件相同的结构。凸块17由金属所制成并且具有优良的导热性,并且形成在金属散热器16的暴露表面上。当半导体元件被安装在例如主板这样的安装基片上时,凸块17被形成为该安装基片的一部分相接触。因此,在根据本发明第三实施例的半导体器件连接到该安装基片的状态下,在半导体器件中产生并且传递到金属散热器16的热量被有效地通过形成于金属散热器16上的凸块17散发到安装基片。
应当指出,通过把凸块17与由形成在主板上的电路图案相同的材料所形成的部分相接触,可以更加有效地散热。
现在将参照图8描述本发明第四实施例。图8为根据本发明第四实施例的半导体器件的截面示图。在图8中,与图3中所示相同的部分由相同的参考标号所表示,并且将省略对它们的描述。除了散热片18形成在半导体元件1的背面1a上之外,根据本发明第四实施例的半导体器件具有与第二实施例的半导体器件相同的结构。
散热片18由类似于铜片或铝片这样的导热材料所形成,并且通过具有良好导热特性的粘合材料19粘合到半导体元件1的背面1a。散热片18可以形成为具有几乎与半导体器件的水平截面相同的面积。因此,来自半导体元件1的热量被通过散热片18有效地散发到半导体器件的外部。
在本实施例中,热量可以有效地通过散热器16和散热片18从半导体元件的两侧散发,并且可以有效地抑制半导体器件的温度升高。另外,类似于上述第二实施例,由于接合引线被形成在印刷电路板10的开口10a内部的区域中,因此整个半导体器件的接合引线的数目增加,并且可以处理要被安装的半导体元件的电极端数目增加的情况。因此,即使半导体元件的电极端的数目增加,也不需要增加设置接合引线的面积,这实现半导体器件的小型化。
下面描述本发明第五实施例。在根据本发明第五实施例的半导体器件中,通过与提供给用于信号的电极的线路不同的线路,把布线提供到该半导体元件上用于电源或接地的电极。
图9为根据本发明第五实施例的半导体器件的截面示图。图9中所示的半导体器件20是所谓的增强球栅阵列(EBGA)型半导体器件,其中多层基片22(第一布线基片)以及半导体元件23被安装在作为接地部分的导电部分21(基片)上。多层基片22在其中部具有一个开口22a,并且半导体元件23被容纳在该开口22a中,使得半导体元件23通过粘合剂24接合到该导电部分。
多层基片22的开口22a以台阶的形式而形成,从而在多层基片22的每一层中形成的电极22b(用于信号的电极)被暴露。在每一层中形成的电极22b通过接合线25连接到设置在半导体元件23周围的相应电极23a(用于信号的电极)。在此,通过接合线25连接到多层基片22的电极22b的半导体元件23的电极23a是用于信号的电极,以及用于电源和接地的电极被构造为可连接到外部部分,而不使用如下文中所述的多层基片22。
半导体元件23的电极23a被设置在半导体元件的电路形成表面23b的外围部分,并且电源电极23c和接地电极24d被设置在电路形成表面23b的中部。图10A至10D为示出在半导体元件23的电路形成表面23b上形成的电极分布的平面示图。应当指出,图10B所示的细长电源电极23c和接地电极23d沿着形成在半导体元件23上用于电源或接地的线路而形成。
设置在电路形成表面23b的外围的相对较小的电极为信号电极23a,并且连接到如图9中所示的多层基片22的电极22b。另一方面,设置在电路形成表面23b的中部的相对较大的电极是电源电极23c和接地电极23d,并且通过例如焊膏或导电膏这样的连接部件29连接到用于电源的多层基片26(第二布线基片),并且接着通过在多层基片26中的布线连接到作为外部连接端的焊锡球27A。
半导体元件23、接合线25和多层基片26被密封树脂28封装在该开口22a中。应当指出,多层基片22的信号电极22b被通过在多层基片22中的布线连接到作为形成于正面的外布连接端的焊锡球27B。
因此,对于作为外部连接端的焊锡球,用于电源连接或接地连接的焊锡球27A被设置在中部,并且用于信号连接的焊锡球27B被设置在外围部分。
另外,为了把多层基片26的电极连接到半导体元件23的电源电极23c和接地电极23d,通过形成接合线的环路,上述连接部件29可以被形成为凸起电极。多层基片26的位置可以通过使用接合线的环路的弹性而调节,并且通过把多层基片26的上表面与多层基片22的上表面相互对齐,形成有作为外部连接端的焊锡块27A和27B的表面可以被整平。
另外,在连接到细长的电源电极23c和接地电极23d的连接部件29的情况中,金属线或金属箔带可以提供于基片26上方,并且通过跳焊而连接到基片26的电极。根据这种连接部件29,在跳焊点之间的上升部分作为上述环路,其对该连接部件提供弹性。应当指出,在下文的实施例的详细描述中将描述该跳焊。
如图10A至10D所示,在具有上述结构的半导体器件20中,通过共同形成电源电极23c和接地电极23d,其中通过比半导体元件的中部的信号电极23a更大的电流,该电源电极23c和接地电极23d的电极间距和尺寸可以大于信号电极23a的尺寸,并且可以使用低成本的装配接合,其减小由于在电源电极23c和接地电极23d中的电阻损耗所导致的电压降(IR降)。
另外,一部分电源电极或接地电极可以包含在半导体元件23的信号电极23a的结构中。也就是说,通过设置在半导体元件23周围的电极对在半导体元件23的外围部分附近形成的电路执行供电(在这种情况中,电能也通过接合线25从多层基片22提供),并且通过设置在半导体元件中部的电极对在半导体元件23的中部附近形成的电路执行供电。因此,可以从半导体元件23中需要供电的电路附近的位置执行供电,并且可以减小在半导体元件上的电源线的长度,从而减小IR降。
另外,电源电极23c和接地电极23d通过分离和专用的线路,而不通过用于信号线的多层基片22,连接到作为外部连接端的焊锡球27。因此,用于向半导体元件23供电的线路可以与用于信号的线路分别设计,因此没有由用于信号的线路所造成的限制,并且可以独立地设计用于电源的线路。并且在该方面中,可以减小IR降。
另外,通常设置在半导体元件周围的电源电极和接地电极可以移动到通常不被使用的半导体元件的中部,并且提供于外围部分的电极数目可以相应地增加。因此,可以在相同的尺寸中获得具有更多电极的半导体器件。或者通过减小提供于外围部分中的电极数,可以使半导体元件的外部结构更小,从而实现半导体器件的小型化。另外,可以省略多层基片22的电源层,并且可以减小多层基片的制造成本。
因此,上述结构的半导体器件20能够实现有效的电极排列和电源线路,并且可以实现性能的改进和成本的降低,并且减小IR降。
现在将参照图11描述本发明第六实施例。在图11中,与图9中所示相同的部件由相同的参考标号所表示,并且省略对它的描述。图11中所示的半导体器件30具有多层基片26A,其对应用于图9中所示的半导体器件20的电源的扩展的多层基片26。多层基片26A也连接到用于信号线的多层基片22,并且例如电容器这样的无源元件形成在多层基片26A中。
也就是说,把半导体元件23的电源电极23c和接地电极23d连接到作为外部连接电极的焊锡球27A的线路形成在多层基片26A中。另外,通过把介电层31形成在多层基片26A的每一层中的用于电源的导体布线层(金属片)和用于接地的导体布线层之间,而在多层基片26A中形成电容器32。电容器32可以作为用于减小半导体器件30的电源线和接地线的噪声的电容器。
应当指出,除了电容器32之外,例如一个电感可以被形成为在多层基片26A中形成的无源元件。
如上文所述,除了根据第五实施例的半导体器件20的优点之外,根据第六实施例的半导体器件30具有这样一个效果,即无源元件可以容易地形成和设置在半导体元件附近。
现在将参照图12描述本发明的第七实施例。图12为根据本发明第七实施例的半导体器件的截面示图。在图12中所示的半导体器件40中,上述第五实施例的中部的电源结构被应用到使用所谓的带状自动接合(TAB)的BGA型半导体器件。
在半导体器件40中,半导体元件23被容纳在形成于作为基底的导电部分41(基片)中的一个开口41a中。导电部分由片状金属部件所制成,并且可以具有集成结构或叠层结构。为了形成开口41a,最好在如图12中所示的叠层结构中形成导电部分。
在执行半导体元件23到柔性板42(第一布线基片)的TAB连接之后,半导体元件23被定位在导电部分41的开口41a中,并且与电路形成表面23b相对的背面接合到导电部分41。在半导体元件23的电极中,仅仅设置在电路形成表面的外围部分中的电极23a由TAB连接方法进行连接。
然后,具有与柔性板42类似的结构的基片43(第二布线基片)通过连接部件44连接到设置在半导体元件23的电路形成表面23b的中部的电源电极23c和接地电极23d。焊锡球27A形成在基片43的正面,作为外部连接端,并且焊锡球27B也形成在柔性板42的正面。
半导体元件23和TAB连接部分由密封树脂45所封装,并且基片43还被密封树脂44所固定。应当指出,半导体元件23的电极结构与图10A至10D所示的电极结构相同,并且将省略对它的描述。
应用上述TAB连接的半导体器件40具有与上述第五实施例相同的优点,另外,该半导体元件的连接可以由TAB连接而简化,并且可以减小半导体器件的厚度。
接着,将参照图13描述本发明第八实施例。图13为根据本发明第八实施例的半导体器件的截面示图。在图13中所示的半导体器件50中,根据上述第五实施例的中部的电源结构被应用于称为面向下的散热器的BGA型半导体器件(FDHBGA)。
即,图13中所示的半导体器件50包括具有形成在其中央的凹陷的导电部分(基片)51以及置于该导电部分51的凹陷中的半导体元件23。在对应于该凹陷的位置具有一个开口的多层基片52(第一布线基片)附着到该导电部分51。与电路形成表面23B相反的半导体元件23的背面被通过焊锡膏或粘合剂53固定到该凹陷的底部表面。导电部分51作为一个接地部分,并且还作为一个散热器。
设置在半导体元件23的电路形成表面23b周围的电极23a通过接合线54连接到多层基片52的电极52a。另一方面,通过例如凸块这样的连接部件65,把具有与多层基片52相同结构的多层基片55(第二布线基片)连接到设置在半导体元件23的电路形成表面23b的中部的电源电极23c和接地电极23d。作为外部连接端的电极焊盘被提供在多层基片55的正面上,并且焊锡涂层54形成在该电极焊盘上。焊锡涂层57对应于上述焊锡球27A,并且作为用于电源或接地的外部连接电极。另外,焊锡球27B还形成在多层基片52的正面上。
半导体元件23、接合线25和多层基片55被密封树脂58封装在导电部分51的凹陷中。应当指出,半导体元件23的电极分布结构与图10A至10D中所示的电极分布相同,并且省略对它的描述。具有上述结构的半导体器件40具有与上述第五实施例相同的优点,并且通过使用具有相对简单的结构减小制造成本和半导体器件的厚度。
下面将描述根据本发明第九实施例的半导体器件。根据本发明第九实施例的半导体器件具有一种结构,其中电极还部分地形成在具有外围分布电极的常规半导体元件的外围分布电极内侧,并且该电极通过线接合连接到外围分布电极。
首先,将描述根据第九实施例的半导体器件。图14为根据本发明第九实施例的半导体器件中所用的半导体元件的平面示图。
半导体元件60具有一种外围分布电极结构,其中电极61在电路形成表面的外围部分中排列为一行。电极61包括用于信号的电极61a、电源电极61b和接地电极61c。在此,在本实施例中,除了外围分布电极61、电极62被提供在设置有外围分布电极61的区域内部的一个区域中电极62包括电源电极62a和接地电极62b。
电源电极62a被通过接合线63线接合到外围分布的电源电极61b。类似地,电源电极62b通过接合线63线接合到外围分布的接地电极61c。接合线63由例如金或铝这样的金属线所制成。
在具有上述电极结构的半导体元件60中,电能被从电源电极62a提供到设置在半导体元件60中部的电路,即在设置有外围分布电极的区域内部。与常规方式相同,在从设置于外围的电源电极61b执行供电的情况中,可以仅仅通过形成在半导体元件上的电源线对半导体元件的中部执行供电。由于在形成于半导体元件上的电源线的宽度(面积)具有限制,并且不能够减小阻值,因此由于该阻值而出现电压降(IR降)这样的问题。
在本实施例中,电能被暂时地从外围分布的电源电极61b提供到位于中部的电源电极62a,并且被提供到外围部分的电源线。与在半导体元件上的电源线相比,该接合线具有非常大的截面面积,因此由于直流电阻所造成的电压降(IR降)非常小。因此,根据本实施例,可以大大地减小内部电源线或内部接地线的直流阻值,而不增加外围分布的内部电源电极和接地电极的数目,并且增加专用于电源或接地的层面数目。
图15A和15B为示出在半导体元件60的绝缘层下提供的电源线或地线的示意图。图15A示出栅栏形状分布的线路,并且电极62形成在与中部的线路相重叠的位置处。图15B示出格子形状分布的线路,并且电极62被提供在该中部的线路交叉点处。
在此,电极62的位置不限于半导体元件60的中部,并且电极62可以被提供在需要特别大的功率的部分中。例如,如图16中所示,多个电极62可以被提供在外围分布的电极61内部。在图16中,外围分布电极61被设置在与半导体元件60的边缘相距1毫米的区域内。另外,电极62大于电极61,并且被提供在与半导体元件的边缘相距大于1毫米的区域中。
为了容易和可靠地连接该接合线63,电极62的表面最好由铝或铝基合金、铜或铜基合金、金或金基合金、钯或钯基合金、铂或铂基合金所形成。另外,例如可以确定造成较大电压降的半导体元件60的部分,并且电压62可以被提供在所确定部分中。也就是说,通过模拟而确定的该部分的表面绝缘层被除去,以形成电极62。
下面将参照图17至图20描述接合线63的接合方法。
图17为通过作为一种线接合方法的跳焊由一条接合线63连接电极61和电极62的一个例子的侧视图。在图17中所示的例子中,使用楔形接合技术来执行该跳焊。即,单个接合线63在电极61和电极62上延伸,并且通过用一个楔子把接合线63压到电极61和62上而执行接合。
图18示出用作为一种线连接方法的线接合而通过该接合线63连接电极61和电极62的一个例子。在图18中所示的例子中,从电极61的两侧分别使用球焊技术执行对中央电极62的接合。因此,中央电极62的面积大于在左侧和右侧上的电极61的面积。
图19示出用作为一种线连接方法的线接合而通过该接合线63连接电极61和电极62的一个例子。在图19中所示的例子中,首先使用球焊技术在中央电极62上形成柱状凸块。然后,分别从电极61的左侧和右侧执行到中央电极62的柱状凸块的接合。
图20示出用作为一种线连接方法的线接合而通过该接合线63连接电极61和电极62的一个例子。在图20中所示的例子中,首先使用球焊技术在右侧的电极61上形成柱状凸块,并且使用球焊技术把接合线从左电极61延伸到右电极61。然后在对应于电极62的位置处把焊膏施加到接合线63,并且把接合线63连接到电极62。
通过上述接合方法,位于半导体元件60的中部的电极62可连接到设置于外围部分中的电极6L例如,外围分布的电源电极61b被通过接合线63连接到设置于内侧的电源电极62a,从而由外围分布的电源电极61b通过接合线63把电能提供到电源电极62a。
图21为根据本发明第九实施例的半导体器件65的截面示图。由上述接合方法(在本例中为图17所示的跳焊)连接电极61和电极62的半导体元件60被安装在布线基片66上,并且外围分布电极61被通过接合线67连接到布线基片88的电极焊盘66a。电极焊盘66a通过在布线基片66中的布线连接到作为外部连接端的焊锡球68。半导体元件60、接合线63和接合线67被密封树脂69所封装。
根据上述半导体器件65,通过外部连接端从外部提供的电压首先被通过接合线65施加到外围分布电极61(电源电极61b)上,然后通过接合线施加到在中部的电极62(电源电极62a)。通过电极61而提供到外围分布电极61(电源电极61b)附近的电路的电能,并且通过电极62而提供到电极62(电源电极62a)附近的电路的电能。
因此,根据本实施例可以通过接合线63对半导体元件中部附近的电路执行供电或接地。因此,到半导体元件60中部附近的电极62(位于外围分布电极61内部的电极)的线路可以通过具有比形成在半导体元件60中的电路布线更大的截面面积的接合线63所形成。因此,可以大大地减小到形成于半导体元件60中的电路的电源线或接地线的直流电阻值。
图22为根据本发明第十实施例的半导体器件70的截面示图。在图22中,与图21中所示相同的部分由相同的参考标号所表示,并且将省略对它的描述。
半导体器件70具有一种结构,其中导电部件71被添加到图21中所示的半导体器件65。导电部件71由金属所制成,并且在导电部件71桥接在半导体元件60上的状态下连接到布线基片66的电极焊盘。另外,接合线63通过焊锡72连接到面对半导体元件60的导电部件71的表面71a。图22中所示的电极61和电极62例如是接地电极,并且导电部件71连接到布线基片66的接地线上的电极焊盘。因此,除了接合线63之外,电极62通过导电部件71电连接到布线基片66,从而进一步减小直流阻值。
图23为根据本发明第十一实施例的半导体器件75的截面示图。在图23中与图21中所示相同的部件由相同的参考标号所表示并且省略对它的描述。
半导体器件75具有这样一种结构,其中例如凸块这样的凸起电极形成在图21中所示的半导体元件60的电极61上,并且半导体元件60被倒装在布线基片66上,使该电路形成表面面对该布线基片66(面向下)。相应地,连接电极61和62的接合线63位于半导体元件60和布线基片66的电路形成表面之间。
图24为根据本发明第十二实施例的半导体器件80的截面示图。在图24中与图22中所示相同的部件由相同的参考标号所表示并且省略对它的描述。
在半导体器件80中,在半导体器件70中的接合线63通过焊锡81电连接到布线基片。因此,电极62仅仅通过接合线63电连接到布线基片66,从而进一步减小直流阻值。
图25为根据本发明第十三实施例的半导体器件85的截面示图。在图25中与图21中所示相同的部件由相同的参考标号所表示并且省略对它的描述。
在半导体器件85中,半导体器件60通过粘合剂87安装到导电部件86上。柔性板88(TAB基片)被通过衬垫部件89安装到导电部件86上,并且柔性板88通过TAB连接而连接到半导体元件60上。作为外部连接端的焊锡球68被形成在柔性板88上。
图26为根据本发明第十四实施例的半导体器件90的截面示图。在图26中,与图21中所示相同的部件由相同的参考标号所表示并且省略对它的描述。
半导体器件90被形成为半导体元件60的引线端类型的封装。也就是说,半导体元件60被安装在引线框架91的平台91a上,并且电极61通过接合线92连接到引线框架91的引线端91b。平台91a、半导体元件60、接合线63和接合线62被密封树脂93所封装。
本发明不限于在此具体公开的实施例,并且可以作出各种改变和变型而不脱离本发明的范围。
本发明基于在2002年5月30日递交的日本在先申请No.2002-158277,其全部内容被包含于此以供参考。
Claims (26)
1.一种半导体器件,其中包括:
半导体元件,其具有一个电路形成表面,电极端在该表面的外围部分排列,该半导体元件被模制树脂封装在对应于半导体元件的电极的位置具有开孔的基片上;所述半导体元件被安装到所述基片上,处于电路形成表面面对该基片和电极端位于该开孔处的状态,并且与半导体元件的电路形成表面相反的背面从模制树脂暴露出来;以及
由金属片所形成的散热部件被提供在与安装有半导体元件的表面相反的基片表面上,该散热部件的表面从模制树脂暴露出来。
2.根据权利要求1所述的半导体器件,其中金属制成的凸起被提供在所述散热部件的暴露表面上。
3.根据权利要求1所述的半导体器件,其中由金属片所形成的散热片附着到所述半导体元件的背面上,并且散热片的表面可以从模制树脂暴露出来。
4.根据权利要求1所述的半导体器件,其中所述半导体元件的电极端可以沿着所述半导体元件的电路形成表面的外围侧形成为两行;外侧行的电极端连接到形成在所述开口外侧上的位置处的所述基片的端子;以及内侧行的电极端连接到形成在所述开口内侧上的位置处的基片的端子。
5.根据权利要求1所述的半导体器件,其中所述基片是带状基片。
6.一种半导体器件,其中包括:
第一布线板,其形成在一个基片上,并且具有暴露该基片的表面的一个开口;
半导体元件,其位于该开口中,并且具有与电路形成表面相反的背面,该背面被接合到该基片上;
接合线,其把形成于所述第一布线板上的电极连接到设置在所述半导体元件的电路形成表面的外围部分上的第一电极;
第二布线板,其面对所述半导体元件的电路形成表面,并且具有连接到设置于所述电路形成表面的中部的第二电极的连接部件;
第一外部连接端,其形成在所述第二布线板上并且电连接到所述连接部件;以及
第二外部连接端,其形成在第一布线板上并且具有第二外部连接电极,该第二外部连接电极通过所述第一布线板的布线和接合线电连接到半导体元件的第一电极。
7.根据权利要求6所述的半导体器件,其中所述半导体元件的所述第一电极是用于信号和电源或接地的电极;所述第二电极是用于电源和接地的电极;以及所述第二电极的排列间距和电极尺寸不同于所述第一电极的排列间距和电极尺寸。
8.根据权利要求7所述的半导体器件,其中所述第二电极沿着在所述半导体元件的电路形成表面上形成的用于电源或接地的电路线而形成。
9.根据权利要求6所述的半导体器件,其中所述第二线路板的所述连接部件由可热熔的导电材料所制成。
10.根据权利要求6所述的半导体器件,其中所述第二布线板的所述连接部件由形成为环状的金属所制成。
11.根据权利要求6所述的半导体器件,其中所述半导体元件的第二电极具有细长的形状,并且所述第二布线板的所述连接部件由通过沿着第二电极执行跳焊而形成的金属线或金属箔所制成。
12.根据权利要求6所述的半导体器件,其中所述基片由导电材料所制成,并且所述半导体元件的背面通过导电接合材料接合到该基片上。
13.根据权利要求6所述的半导体器件,其中所述第一布线板是多层布线板,并且所述半导体元件的所述第一电极通过接合线连接到形成在所述第一布线板的不同层面中的电极。
14.根据权利要求6所述的半导体器件,其中所述第二布线板是一个多层布线板,并且无源元件形成在所述第一和第二布线板中的至少一个板上。
15.根据权利要求14所述的半导体器件,其中所述无源元件是一个旁路电容器。
16.根据权利要求6所述的半导体器件,其中所述半导体元件位于形成在所述基片中的一个凹陷中;第一布线板是一个柔性板;以及所述柔性板的电极通过TAB连接而连接到所述半导体元件的所述第一电极。
17.一种半导体器件,其中包括:
半导体元件,其具有设置在电路形成表面的外围部分上第一电极、设置在第一电极形成于该半导体形成表面的一个区域内的第二电极、以及连接在所述第一电极和所述第二电极之间的金属线;以及
电连接到所述第一电极的外部连接端。
18.根据权利要求17所述的半导体器件,其中所述金属线通过跳焊而接合到所述第一和第二电极。
19.根据权利要求17所述的半导体器件,其中所述金属线通过球焊接合到所述第一和第二电极。
20.根据权利要求17所述的半导体器件,其中所述第一电极是用于信号的电极以及用于电源或接地的电极,以及所述第二电极是用于电源或接地的电极。
21.根据权利要求17所述的半导体器件,其中所述第二电极具有比所述第一电极更大的面积。
22.根据权利要求17所述的半导体器件,其中所述半导体元件在面向上的状态下安装在一个布线板上;所述第一电极通过金属线连接到该布线板;以及所述外部连接端形成在与安装有所述半导体元件的表面相反的基片表面上。
23.根据权利要求17所述的半导体器件,其中一个导电部件被提供在与所述半导体元件的电路形成表面相对的位置处,并且所述金属线电连接到部分地在所述第一电极和所述第二电极之间的所述导电部件。
24.根据权利要求17所述的半导体器件,其中所述半导体元件在面向下的状态下安装在布线板上;所述第一电极通过倒装片接合连接到该布线板;以及所述外部连接端形成在与安装有所述半导体元件的表面相反的基片表面上。
25.根据权利要求17所述的半导体器件,其中所述金属线电连接到部分地在所述第一电极和所述第二电极之间的所述导电部件。
26.根据权利要求17所述的半导体器件,其中所述半导体元件在面向上的状态下安装在引线框架上;该引线框架的引线端作为所述外部连接端;以及所述第一电极通过金属线连接到所述引线端。
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2003
- 2003-01-24 TW TW092101633A patent/TW582100B/zh not_active IP Right Cessation
- 2003-01-27 EP EP03250623A patent/EP1367642A3/en not_active Withdrawn
- 2003-01-28 KR KR10-2003-0005395A patent/KR20030093915A/ko not_active Application Discontinuation
- 2003-01-28 US US10/352,074 patent/US7193320B2/en not_active Expired - Fee Related
- 2003-02-14 CN CNA2005100885542A patent/CN1728371A/zh active Pending
- 2003-02-14 CN CNB031038832A patent/CN1271712C/zh not_active Expired - Fee Related
-
2007
- 2007-01-19 US US11/655,253 patent/US20070114642A1/en not_active Abandoned
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CN102290387A (zh) * | 2010-06-16 | 2011-12-21 | 三菱电机株式会社 | 半导体装置 |
CN103151092A (zh) * | 2011-12-06 | 2013-06-12 | 富士通株式会社 | 导电接合材料、电子组件和电子装置 |
Also Published As
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TW200307356A (en) | 2003-12-01 |
US20030222344A1 (en) | 2003-12-04 |
US20070114642A1 (en) | 2007-05-24 |
EP1367642A3 (en) | 2005-08-31 |
KR20030093915A (ko) | 2003-12-11 |
CN1271712C (zh) | 2006-08-23 |
CN1728371A (zh) | 2006-02-01 |
EP1367642A2 (en) | 2003-12-03 |
TW582100B (en) | 2004-04-01 |
US7193320B2 (en) | 2007-03-20 |
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