CN1414619A - 测试阵列与测试存储阵列的方法 - Google Patents

测试阵列与测试存储阵列的方法 Download PDF

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Publication number
CN1414619A
CN1414619A CN02147054A CN02147054A CN1414619A CN 1414619 A CN1414619 A CN 1414619A CN 02147054 A CN02147054 A CN 02147054A CN 02147054 A CN02147054 A CN 02147054A CN 1414619 A CN1414619 A CN 1414619A
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CN
China
Prior art keywords
conductor
hot
wire array
array
conductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN02147054A
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English (en)
Chinese (zh)
Inventor
L·T·特兰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
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Hewlett Packard Co
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Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of CN1414619A publication Critical patent/CN1414619A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G11C2029/2602—Concurrent test

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  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
CN02147054A 2001-10-25 2002-10-25 测试阵列与测试存储阵列的方法 Pending CN1414619A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/983,697 US6639859B2 (en) 2001-10-25 2001-10-25 Test array and method for testing memory arrays
US09/983697 2001-10-25

Publications (1)

Publication Number Publication Date
CN1414619A true CN1414619A (zh) 2003-04-30

Family

ID=25530063

Family Applications (1)

Application Number Title Priority Date Filing Date
CN02147054A Pending CN1414619A (zh) 2001-10-25 2002-10-25 测试阵列与测试存储阵列的方法

Country Status (6)

Country Link
US (1) US6639859B2 (enExample)
EP (1) EP1308965A3 (enExample)
JP (1) JP4037728B2 (enExample)
KR (1) KR100935645B1 (enExample)
CN (1) CN1414619A (enExample)
TW (1) TW564433B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101458968B (zh) * 2007-12-13 2010-11-10 中芯国际集成电路制造(上海)有限公司 获取非挥发存储器中失效二进制位分布信息的方法与装置
CN103165581A (zh) * 2011-12-16 2013-06-19 台湾积体电路制造股份有限公司 测试结构、其制造方法、测试方法、以及mram阵列
CN104272122A (zh) * 2011-11-08 2015-01-07 赛登斯公司 用于未被编程的otp存储器阵列的测试单元
CN112767989A (zh) * 2021-01-06 2021-05-07 波平方科技(杭州)有限公司 新型存储器测试结构

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US20030218896A1 (en) * 2002-05-22 2003-11-27 Pon Harry Q Combined memory
US6978407B2 (en) * 2003-05-27 2005-12-20 Lsi Logic Corporation Method and architecture for detecting random and systematic transistor degradation for transistor reliability evaluation in high-density memory
US7085183B2 (en) * 2004-07-13 2006-08-01 Headway Technologies, Inc. Adaptive algorithm for MRAM manufacturing
US20070014307A1 (en) * 2005-07-14 2007-01-18 Yahoo! Inc. Content router forwarding
KR100689841B1 (ko) 2006-02-13 2007-03-08 삼성전자주식회사 반도체 제조장치용 레벨링 알고리듬 및 관련된 장치
US8868820B2 (en) * 2011-10-31 2014-10-21 Microsemi SoC Corporation RAM block designed for efficient ganging

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JP2629213B2 (ja) * 1987-11-13 1997-07-09 松下電器産業株式会社 アクティブマトリックスアレイの検査方法および検査装置
DE3937187A1 (de) * 1989-11-08 1991-05-16 Philips Patentverwaltung Verfahren zum herstellen von integrierten schaltungen sowie integrierte schaltung
US5083697A (en) * 1990-02-14 1992-01-28 Difrancesco Louis Particle-enhanced joining of metal surfaces
US5107459A (en) * 1990-04-20 1992-04-21 International Business Machines Corporation Stacked bit-line architecture for high density cross-point memory cell array
JPH05144293A (ja) * 1991-11-20 1993-06-11 Sony Corp 半導体メモリーｔｅｇ及び半導体メモリー回路の検査方法
US5952838A (en) * 1995-06-21 1999-09-14 Sony Corporation Reconfigurable array of test structures and method for testing an array of test structures
JPH0991998A (ja) * 1995-09-20 1997-04-04 Nittetsu Semiconductor Kk 半導体記憶装置
US5764569A (en) * 1996-09-24 1998-06-09 Altera Corporation Test structure and method to characterize charge gain in a non-volatile memory
US5794175A (en) * 1997-09-09 1998-08-11 Teradyne, Inc. Low cost, highly parallel memory tester
JPH11120797A (ja) * 1997-10-15 1999-04-30 Toshiba Microelectronics Corp 強誘電体メモリ及びそのスクリーニング方法
US6018484A (en) * 1998-10-30 2000-01-25 Stmicroelectronics, Inc. Method and apparatus for testing random access memory devices
US6456525B1 (en) * 2000-09-15 2002-09-24 Hewlett-Packard Company Short-tolerant resistive cross point array
US6552409B2 (en) * 2001-06-05 2003-04-22 Hewlett-Packard Development Company, Lp Techniques for addressing cross-point diode memory arrays

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101458968B (zh) * 2007-12-13 2010-11-10 中芯国际集成电路制造(上海)有限公司 获取非挥发存储器中失效二进制位分布信息的方法与装置
CN104272122A (zh) * 2011-11-08 2015-01-07 赛登斯公司 用于未被编程的otp存储器阵列的测试单元
CN103165581A (zh) * 2011-12-16 2013-06-19 台湾积体电路制造股份有限公司 测试结构、其制造方法、测试方法、以及mram阵列
CN103165581B (zh) * 2011-12-16 2016-06-01 台湾积体电路制造股份有限公司 测试结构、其制造方法、测试方法、以及mram阵列
CN112767989A (zh) * 2021-01-06 2021-05-07 波平方科技(杭州)有限公司 新型存储器测试结构

Also Published As

Publication number Publication date
EP1308965A2 (en) 2003-05-07
KR20030034012A (ko) 2003-05-01
US20030081477A1 (en) 2003-05-01
TW564433B (en) 2003-12-01
JP4037728B2 (ja) 2008-01-23
EP1308965A3 (en) 2004-09-22
KR100935645B1 (ko) 2010-01-07
JP2003203499A (ja) 2003-07-18
US6639859B2 (en) 2003-10-28

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