CN1394296A - 感光性树脂组合物 - Google Patents
感光性树脂组合物 Download PDFInfo
- Publication number
- CN1394296A CN1394296A CN01803259A CN01803259A CN1394296A CN 1394296 A CN1394296 A CN 1394296A CN 01803259 A CN01803259 A CN 01803259A CN 01803259 A CN01803259 A CN 01803259A CN 1394296 A CN1394296 A CN 1394296A
- Authority
- CN
- China
- Prior art keywords
- photosensitizer
- esterification
- photosensitive polymer
- polymer combination
- sulfonic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
光敏剂 | Si衬底结果 | 玻璃衬底结果 | |||||
a(重量%) | b(重量%) | Eth(mJ/cm2) | 膜剩余率(%) | Eth(mJ/cm2) | 膜剩余率(%) | 图案表面状态 | |
实施例1 | 50 | 50 | 12.2 | 97.9 | 11.1 | 88.3 | ◎ |
实施例2 | 90 | 10 | 12.2 | 98.2 | 11.1 | 86.1 | ○ |
实施例3 | 67 | 33 | 12.2 | 98.0 | 11.1 | 87.4 | ○ |
实施例4 | 33 | 67 | 12.2 | 97.7 | 11.1 | 88.2 | ◎ |
实施例5 | 10 | 90 | 12.2 | 97.0 | 11.1 | 87.8 | ○ |
比较例1 | 100 | 0 | 12.2 | 98.3 | 11.1 | 85.5 | × |
比较例2 | 0 | 100 | 12.2 | 96.0 | 11.1 | 87.0 | △ |
比较例3 | 100 | 0 | 17.0 | 99.4 | 15.2 | 90.2 | × |
比较例4 | 0 | 100 | 10.6 | 90.5 | 9.8 | 82.3 | × |
光敏剂 | Si衬底结果 | 玻璃衬底结果 | |||||
a(重量%) | c(重量%) | Eth(mJ/cm2) | 膜剩余率(%) | Eth(mJ/cm2) | 膜剩余率(%) | 图案表面状态 | |
实施例6 | 50 | 50 | 12.2 | 97.0 | 11.1 | 87.8 | ◎ |
实施例7 | 90 | 10 | 12.2 | 98.0 | 11.1 | 86.3 | ○ |
实施例8 | 67 | 33 | 12.2 | 97.7 | 11.1 | 88.5 | ◎ |
实施例9 | 33 | 67 | 12.2 | 95.5 | 11.1 | 87.5 | ○ |
实施例10 | 10 | 90 | 12.2 | 93.0 | 11.1 | 87.0 | ○ |
比较例1 | 100 | 0 | 12.2 | 98.3 | 11.1 | 85.5 | × |
比较例3 | 100 | 0 | 17.0 | 99.4 | 15.2 | 90.2 | × |
比较例5 | 0 | 100 | 12.2 | 90.0 | 11.1 | 85.0 | × |
比较例6 | 0 | 100 | 8.4 | 82.3 | 7.6 | 78.5 | × |
Claims (2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000331811A JP4312946B2 (ja) | 2000-10-31 | 2000-10-31 | 感光性樹脂組成物 |
JP331811/2000 | 2000-10-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1394296A true CN1394296A (zh) | 2003-01-29 |
CN1212544C CN1212544C (zh) | 2005-07-27 |
Family
ID=18808105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018032591A Expired - Lifetime CN1212544C (zh) | 2000-10-31 | 2001-10-11 | 感光性树脂组合物 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20030003388A1 (zh) |
EP (1) | EP1255161A1 (zh) |
JP (1) | JP4312946B2 (zh) |
KR (1) | KR100859274B1 (zh) |
CN (1) | CN1212544C (zh) |
TW (1) | TW538308B (zh) |
WO (1) | WO2002037185A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1310087C (zh) * | 2003-10-06 | 2007-04-11 | 东京应化工业株式会社 | 排出喷嘴式涂敷法用正型光致抗蚀剂组合物以及抗蚀图案的形成方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61118744A (ja) | 1984-11-15 | 1986-06-06 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
US5168030A (en) | 1986-10-13 | 1992-12-01 | Mitsubishi Denki Kabushiki Kaisha | Positive type o-quinone diazide photo-resist containing antistatic agent selected from hydrazones, ethylcarbazole and bis(dimethylamino)benzene |
JPH02110462A (ja) * | 1988-06-21 | 1990-04-23 | Mitsubishi Kasei Corp | ポジ型フォトレジスト |
JP2640137B2 (ja) | 1989-02-28 | 1997-08-13 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
US5362597A (en) | 1991-05-30 | 1994-11-08 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive resin composition comprising an epoxy-containing alkali-soluble resin and a naphthoquinone diazide sulfonic acid ester |
JPH05333538A (ja) * | 1992-05-27 | 1993-12-17 | Toray Ind Inc | ポジ型感放射線レジスト組成物およびそれを用いるパターン形成方法 |
US5434031A (en) | 1992-11-18 | 1995-07-18 | Tokyo Ohka Kogyo Co., Ltd. | Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive |
US5476750A (en) * | 1992-12-29 | 1995-12-19 | Hoechst Celanese Corporation | Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists |
JPH06348018A (ja) * | 1993-06-10 | 1994-12-22 | Toray Ind Inc | 感放射線レジスト組成物 |
-
2000
- 2000-10-31 JP JP2000331811A patent/JP4312946B2/ja not_active Expired - Lifetime
-
2001
- 2001-10-09 TW TW090124931A patent/TW538308B/zh not_active IP Right Cessation
- 2001-10-11 US US10/168,817 patent/US20030003388A1/en not_active Abandoned
- 2001-10-11 WO PCT/JP2001/008924 patent/WO2002037185A1/ja not_active Application Discontinuation
- 2001-10-11 EP EP01974782A patent/EP1255161A1/en not_active Withdrawn
- 2001-10-11 KR KR1020027008440A patent/KR100859274B1/ko active IP Right Grant
- 2001-10-11 CN CNB018032591A patent/CN1212544C/zh not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1310087C (zh) * | 2003-10-06 | 2007-04-11 | 东京应化工业株式会社 | 排出喷嘴式涂敷法用正型光致抗蚀剂组合物以及抗蚀图案的形成方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1212544C (zh) | 2005-07-27 |
US20030003388A1 (en) | 2003-01-02 |
EP1255161A1 (en) | 2002-11-06 |
WO2002037185A1 (fr) | 2002-05-10 |
JP4312946B2 (ja) | 2009-08-12 |
JP2002139831A (ja) | 2002-05-17 |
KR100859274B1 (ko) | 2008-09-19 |
TW538308B (en) | 2003-06-21 |
KR20030023609A (ko) | 2003-03-19 |
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Owner name: CLARIANT FINANCE (JAPAN) K.K. Free format text: FORMER OWNER: CLARIANT INTERNATIONAL LTD. Effective date: 20030320 |
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Effective date of registration: 20030320 Applicant after: Clariant Finance (BVI) Ltd. Applicant before: Clariant International Ltd. |
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Owner name: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Free format text: FORMER OWNER: AZ ELECTRONIC MATERIAL (JAPAN) CO., LTD. Effective date: 20120522 |
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Effective date of registration: 20120522 Address after: Tokyo, Japan, Japan Patentee after: AZ Electronic Materials (Japan) K. K. Address before: Tokyo, Japan, Japan Patentee before: AZ electronic materials (Japan) Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: MERCK PATENT GMBH Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Effective date: 20150407 |
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Effective date of registration: 20150407 Address after: Darmstadt Patentee after: Merck Patent GmbH Address before: Tokyo, Japan, Japan Patentee before: AZ Electronic Materials (Japan) K. K. |
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CX01 | Expiry of patent term |
Granted publication date: 20050727 |
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CX01 | Expiry of patent term |