CN1384976A - 利用绝缘衬垫防止窄器件中的阈值电压的滚降 - Google Patents
利用绝缘衬垫防止窄器件中的阈值电压的滚降 Download PDFInfo
- Publication number
- CN1384976A CN1384976A CN00802463A CN00802463A CN1384976A CN 1384976 A CN1384976 A CN 1384976A CN 00802463 A CN00802463 A CN 00802463A CN 00802463 A CN00802463 A CN 00802463A CN 1384976 A CN1384976 A CN 1384976A
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- CN
- China
- Prior art keywords
- dielectric
- insulation layer
- basically
- nitride
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/432666 | 1999-11-02 | ||
US09/432,666 US6251747B1 (en) | 1999-11-02 | 1999-11-02 | Use of an insulating spacer to prevent threshold voltage roll-off in narrow devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1384976A true CN1384976A (zh) | 2002-12-11 |
CN1199256C CN1199256C (zh) | 2005-04-27 |
Family
ID=23717108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008024634A Expired - Fee Related CN1199256C (zh) | 1999-11-02 | 2000-10-26 | 利用绝缘衬垫防止窄器件中的阈值电压的滚降 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6251747B1 (zh) |
EP (1) | EP1145304B1 (zh) |
JP (1) | JP2003513469A (zh) |
KR (2) | KR100707535B1 (zh) |
CN (1) | CN1199256C (zh) |
DE (1) | DE60045734D1 (zh) |
WO (1) | WO2001033626A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1327504C (zh) * | 2004-06-25 | 2007-07-18 | 茂德科技股份有限公司 | 制造半导体元件的方法 |
CN101320732B (zh) * | 2007-06-05 | 2010-09-15 | 台湾积体电路制造股份有限公司 | 半导体装置以及用以制造半导体装置的衬底 |
CN115497869A (zh) * | 2022-11-17 | 2022-12-20 | 合肥新晶集成电路有限公司 | 半导体结构的制备方法及半导体结构 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6492238B1 (en) * | 2001-06-22 | 2002-12-10 | International Business Machines Corporation | Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit |
US6566225B2 (en) * | 2001-08-06 | 2003-05-20 | Macronix International Co., Ltd. | Formation method of shallow trench isolation |
US6661044B2 (en) * | 2001-10-22 | 2003-12-09 | Winbond Electronics Corp. | Method of manufacturing MOSEFT and structure thereof |
US20050135759A1 (en) * | 2003-12-22 | 2005-06-23 | Xingwu Wang | Optical fiber assembly |
US6541321B1 (en) * | 2002-05-14 | 2003-04-01 | Advanced Micro Devices, Inc. | Method of making transistors with gate insulation layers of differing thickness |
US6828211B2 (en) * | 2002-10-01 | 2004-12-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shallow trench filled with two or more dielectrics for isolation and coupling or for stress control |
KR100921329B1 (ko) * | 2002-12-20 | 2009-10-13 | 매그나칩 반도체 유한회사 | 반도체 소자의 소자 분리막 형성 방법 |
SG121754A1 (en) * | 2003-01-24 | 2006-05-26 | Systems On Silicon Mfg Company | Method of forming shallow trench isolation structures |
KR100524809B1 (ko) | 2003-12-19 | 2005-11-01 | 주식회사 하이닉스반도체 | 반도체 소자의 이중게이트 절연막 형성방법 |
KR100753155B1 (ko) * | 2006-05-09 | 2007-08-30 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
KR100901822B1 (ko) * | 2007-09-11 | 2009-06-09 | 주식회사 실트론 | 질화갈륨 성장용 기판 및 질화갈륨 기판 제조 방법 |
US8765491B2 (en) | 2010-10-28 | 2014-07-01 | International Business Machines Corporation | Shallow trench isolation recess repair using spacer formation process |
US8916950B2 (en) | 2011-10-18 | 2014-12-23 | International Business Machines Corporation | Shallow trench isolation structure having a nitride plug |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4654120A (en) | 1985-10-31 | 1987-03-31 | International Business Machines Corporation | Method of making a planar trench semiconductor structure |
US5433794A (en) | 1992-12-10 | 1995-07-18 | Micron Technology, Inc. | Spacers used to form isolation trenches with improved corners |
JPH07183409A (ja) * | 1993-12-24 | 1995-07-21 | Seiko Epson Corp | 半導体装置とその製造方法 |
US5521422A (en) * | 1994-12-02 | 1996-05-28 | International Business Machines Corporation | Corner protected shallow trench isolation device |
US5882982A (en) | 1997-01-16 | 1999-03-16 | Vlsi Technology, Inc. | Trench isolation method |
US5960297A (en) * | 1997-07-02 | 1999-09-28 | Kabushiki Kaisha Toshiba | Shallow trench isolation structure and method of forming the same |
TW351849B (en) * | 1997-09-11 | 1999-02-01 | United Microelectronics Corp | Method for fabricating shadow trench insulation structure |
US6005279A (en) * | 1997-12-18 | 1999-12-21 | Advanced Micro Devices, Inc. | Trench edge spacer formation |
US5882983A (en) * | 1997-12-19 | 1999-03-16 | Advanced Micro Devices, Inc. | Trench isolation structure partially bound between a pair of low K dielectric structures |
US6228741B1 (en) * | 1998-01-13 | 2001-05-08 | Texas Instruments Incorporated | Method for trench isolation of semiconductor devices |
US6054343A (en) * | 1998-01-26 | 2000-04-25 | Texas Instruments Incorporated | Nitride trench fill process for increasing shallow trench isolation (STI) robustness |
US5950090A (en) * | 1998-11-16 | 1999-09-07 | United Microelectronics Corp. | Method for fabricating a metal-oxide semiconductor transistor |
-
1999
- 1999-11-02 US US09/432,666 patent/US6251747B1/en not_active Expired - Fee Related
-
2000
- 2000-10-26 JP JP2001535226A patent/JP2003513469A/ja not_active Withdrawn
- 2000-10-26 KR KR1020017008409A patent/KR100707535B1/ko not_active IP Right Cessation
- 2000-10-26 CN CNB008024634A patent/CN1199256C/zh not_active Expired - Fee Related
- 2000-10-26 DE DE60045734T patent/DE60045734D1/de not_active Expired - Lifetime
- 2000-10-26 EP EP00975391A patent/EP1145304B1/en not_active Expired - Lifetime
- 2000-10-26 WO PCT/US2000/029466 patent/WO2001033626A1/en active Application Filing
- 2000-10-26 KR KR1020017008304A patent/KR100728398B1/ko not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1327504C (zh) * | 2004-06-25 | 2007-07-18 | 茂德科技股份有限公司 | 制造半导体元件的方法 |
CN101320732B (zh) * | 2007-06-05 | 2010-09-15 | 台湾积体电路制造股份有限公司 | 半导体装置以及用以制造半导体装置的衬底 |
CN115497869A (zh) * | 2022-11-17 | 2022-12-20 | 合肥新晶集成电路有限公司 | 半导体结构的制备方法及半导体结构 |
CN115497869B (zh) * | 2022-11-17 | 2023-04-18 | 合肥新晶集成电路有限公司 | 半导体结构的制备方法及半导体结构 |
Also Published As
Publication number | Publication date |
---|---|
KR20010093238A (ko) | 2001-10-27 |
JP2003513469A (ja) | 2003-04-08 |
US6251747B1 (en) | 2001-06-26 |
KR100707535B1 (ko) | 2007-04-12 |
EP1145304A1 (en) | 2001-10-17 |
KR100728398B1 (ko) | 2007-06-13 |
CN1199256C (zh) | 2005-04-27 |
KR20010100005A (ko) | 2001-11-09 |
DE60045734D1 (de) | 2011-04-28 |
EP1145304B1 (en) | 2011-03-16 |
WO2001033626A1 (en) | 2001-05-10 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: ROYAL PHILIPS ELECTRONICS CO., LTD. Effective date: 20070914 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20070914 Address after: Holland Ian Deho Finn Patentee after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Patentee before: Koninklike Philips Electronics N. V. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050427 Termination date: 20141026 |
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EXPY | Termination of patent right or utility model |