CN1384976A - 利用绝缘衬垫防止窄器件中的阈值电压的滚降 - Google Patents
利用绝缘衬垫防止窄器件中的阈值电压的滚降 Download PDFInfo
- Publication number
- CN1384976A CN1384976A CN00802463A CN00802463A CN1384976A CN 1384976 A CN1384976 A CN 1384976A CN 00802463 A CN00802463 A CN 00802463A CN 00802463 A CN00802463 A CN 00802463A CN 1384976 A CN1384976 A CN 1384976A
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- Prior art keywords
- dielectric
- insulation layer
- basically
- nitride
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000006850 spacer group Chemical group 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 31
- 150000004767 nitrides Chemical group 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000002955 isolation Methods 0.000 claims abstract description 13
- 238000009413 insulation Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 210000003168 insulating cell Anatomy 0.000 claims description 9
- 238000011161 development Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims 2
- 238000012545 processing Methods 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 abstract description 2
- 230000000873 masking effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/432666 | 1999-11-02 | ||
US09/432,666 US6251747B1 (en) | 1999-11-02 | 1999-11-02 | Use of an insulating spacer to prevent threshold voltage roll-off in narrow devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1384976A true CN1384976A (zh) | 2002-12-11 |
CN1199256C CN1199256C (zh) | 2005-04-27 |
Family
ID=23717108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008024634A Expired - Fee Related CN1199256C (zh) | 1999-11-02 | 2000-10-26 | 利用绝缘衬垫防止窄器件中的阈值电压的滚降 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6251747B1 (zh) |
EP (1) | EP1145304B1 (zh) |
JP (1) | JP2003513469A (zh) |
KR (2) | KR100707535B1 (zh) |
CN (1) | CN1199256C (zh) |
DE (1) | DE60045734D1 (zh) |
WO (1) | WO2001033626A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1327504C (zh) * | 2004-06-25 | 2007-07-18 | 茂德科技股份有限公司 | 制造半导体元件的方法 |
CN101320732B (zh) * | 2007-06-05 | 2010-09-15 | 台湾积体电路制造股份有限公司 | 半导体装置以及用以制造半导体装置的衬底 |
CN115497869A (zh) * | 2022-11-17 | 2022-12-20 | 合肥新晶集成电路有限公司 | 半导体结构的制备方法及半导体结构 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6492238B1 (en) * | 2001-06-22 | 2002-12-10 | International Business Machines Corporation | Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit |
US6566225B2 (en) * | 2001-08-06 | 2003-05-20 | Macronix International Co., Ltd. | Formation method of shallow trench isolation |
US6661044B2 (en) * | 2001-10-22 | 2003-12-09 | Winbond Electronics Corp. | Method of manufacturing MOSEFT and structure thereof |
US20050135759A1 (en) * | 2003-12-22 | 2005-06-23 | Xingwu Wang | Optical fiber assembly |
US6541321B1 (en) * | 2002-05-14 | 2003-04-01 | Advanced Micro Devices, Inc. | Method of making transistors with gate insulation layers of differing thickness |
US6828211B2 (en) * | 2002-10-01 | 2004-12-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shallow trench filled with two or more dielectrics for isolation and coupling or for stress control |
KR100921329B1 (ko) * | 2002-12-20 | 2009-10-13 | 매그나칩 반도체 유한회사 | 반도체 소자의 소자 분리막 형성 방법 |
SG121754A1 (en) * | 2003-01-24 | 2006-05-26 | Systems On Silicon Mfg Company | Method of forming shallow trench isolation structures |
KR100524809B1 (ko) | 2003-12-19 | 2005-11-01 | 주식회사 하이닉스반도체 | 반도체 소자의 이중게이트 절연막 형성방법 |
KR100753155B1 (ko) * | 2006-05-09 | 2007-08-30 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
KR100901822B1 (ko) * | 2007-09-11 | 2009-06-09 | 주식회사 실트론 | 질화갈륨 성장용 기판 및 질화갈륨 기판 제조 방법 |
US8765491B2 (en) | 2010-10-28 | 2014-07-01 | International Business Machines Corporation | Shallow trench isolation recess repair using spacer formation process |
US8916950B2 (en) | 2011-10-18 | 2014-12-23 | International Business Machines Corporation | Shallow trench isolation structure having a nitride plug |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4654120A (en) | 1985-10-31 | 1987-03-31 | International Business Machines Corporation | Method of making a planar trench semiconductor structure |
US5433794A (en) | 1992-12-10 | 1995-07-18 | Micron Technology, Inc. | Spacers used to form isolation trenches with improved corners |
JPH07183409A (ja) * | 1993-12-24 | 1995-07-21 | Seiko Epson Corp | 半導体装置とその製造方法 |
US5521422A (en) * | 1994-12-02 | 1996-05-28 | International Business Machines Corporation | Corner protected shallow trench isolation device |
US5882982A (en) | 1997-01-16 | 1999-03-16 | Vlsi Technology, Inc. | Trench isolation method |
US5960297A (en) * | 1997-07-02 | 1999-09-28 | Kabushiki Kaisha Toshiba | Shallow trench isolation structure and method of forming the same |
TW351849B (en) * | 1997-09-11 | 1999-02-01 | United Microelectronics Corp | Method for fabricating shadow trench insulation structure |
US6005279A (en) * | 1997-12-18 | 1999-12-21 | Advanced Micro Devices, Inc. | Trench edge spacer formation |
US5882983A (en) * | 1997-12-19 | 1999-03-16 | Advanced Micro Devices, Inc. | Trench isolation structure partially bound between a pair of low K dielectric structures |
US6228741B1 (en) | 1998-01-13 | 2001-05-08 | Texas Instruments Incorporated | Method for trench isolation of semiconductor devices |
US6054343A (en) * | 1998-01-26 | 2000-04-25 | Texas Instruments Incorporated | Nitride trench fill process for increasing shallow trench isolation (STI) robustness |
US5950090A (en) * | 1998-11-16 | 1999-09-07 | United Microelectronics Corp. | Method for fabricating a metal-oxide semiconductor transistor |
-
1999
- 1999-11-02 US US09/432,666 patent/US6251747B1/en not_active Expired - Fee Related
-
2000
- 2000-10-26 KR KR1020017008409A patent/KR100707535B1/ko not_active IP Right Cessation
- 2000-10-26 EP EP00975391A patent/EP1145304B1/en not_active Expired - Lifetime
- 2000-10-26 DE DE60045734T patent/DE60045734D1/de not_active Expired - Lifetime
- 2000-10-26 KR KR1020017008304A patent/KR100728398B1/ko not_active IP Right Cessation
- 2000-10-26 JP JP2001535226A patent/JP2003513469A/ja not_active Withdrawn
- 2000-10-26 WO PCT/US2000/029466 patent/WO2001033626A1/en active Application Filing
- 2000-10-26 CN CNB008024634A patent/CN1199256C/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1327504C (zh) * | 2004-06-25 | 2007-07-18 | 茂德科技股份有限公司 | 制造半导体元件的方法 |
CN101320732B (zh) * | 2007-06-05 | 2010-09-15 | 台湾积体电路制造股份有限公司 | 半导体装置以及用以制造半导体装置的衬底 |
CN115497869A (zh) * | 2022-11-17 | 2022-12-20 | 合肥新晶集成电路有限公司 | 半导体结构的制备方法及半导体结构 |
CN115497869B (zh) * | 2022-11-17 | 2023-04-18 | 合肥新晶集成电路有限公司 | 半导体结构的制备方法及半导体结构 |
Also Published As
Publication number | Publication date |
---|---|
DE60045734D1 (de) | 2011-04-28 |
KR100707535B1 (ko) | 2007-04-12 |
CN1199256C (zh) | 2005-04-27 |
EP1145304A1 (en) | 2001-10-17 |
JP2003513469A (ja) | 2003-04-08 |
EP1145304B1 (en) | 2011-03-16 |
KR100728398B1 (ko) | 2007-06-13 |
WO2001033626A1 (en) | 2001-05-10 |
KR20010093238A (ko) | 2001-10-27 |
US6251747B1 (en) | 2001-06-26 |
KR20010100005A (ko) | 2001-11-09 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: ROYAL PHILIPS ELECTRONICS CO., LTD. Effective date: 20070914 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20070914 Address after: Holland Ian Deho Finn Patentee after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Patentee before: Koninklike Philips Electronics N. V. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050427 Termination date: 20141026 |
|
EXPY | Termination of patent right or utility model |