SG121754A1 - Method of forming shallow trench isolation structures - Google Patents
Method of forming shallow trench isolation structuresInfo
- Publication number
- SG121754A1 SG121754A1 SG200300209A SG200300209A SG121754A1 SG 121754 A1 SG121754 A1 SG 121754A1 SG 200300209 A SG200300209 A SG 200300209A SG 200300209 A SG200300209 A SG 200300209A SG 121754 A1 SG121754 A1 SG 121754A1
- Authority
- SG
- Singapore
- Prior art keywords
- trench isolation
- shallow trench
- isolation structures
- forming shallow
- forming
- Prior art date
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200300209A SG121754A1 (en) | 2003-01-24 | 2003-01-24 | Method of forming shallow trench isolation structures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200300209A SG121754A1 (en) | 2003-01-24 | 2003-01-24 | Method of forming shallow trench isolation structures |
Publications (1)
Publication Number | Publication Date |
---|---|
SG121754A1 true SG121754A1 (en) | 2006-05-26 |
Family
ID=37945366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200300209A SG121754A1 (en) | 2003-01-24 | 2003-01-24 | Method of forming shallow trench isolation structures |
Country Status (1)
Country | Link |
---|---|
SG (1) | SG121754A1 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6251747B1 (en) * | 1999-11-02 | 2001-06-26 | Philips Semiconductors, Inc. | Use of an insulating spacer to prevent threshold voltage roll-off in narrow devices |
US6268264B1 (en) * | 1998-12-04 | 2001-07-31 | Vanguard International Semiconductor Corp. | Method of forming shallow trench isolation |
US6323092B1 (en) * | 1998-12-19 | 2001-11-27 | United Microelectronics Corp. | Method for forming a shallow trench isolation |
-
2003
- 2003-01-24 SG SG200300209A patent/SG121754A1/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6268264B1 (en) * | 1998-12-04 | 2001-07-31 | Vanguard International Semiconductor Corp. | Method of forming shallow trench isolation |
US6323092B1 (en) * | 1998-12-19 | 2001-11-27 | United Microelectronics Corp. | Method for forming a shallow trench isolation |
US6251747B1 (en) * | 1999-11-02 | 2001-06-26 | Philips Semiconductors, Inc. | Use of an insulating spacer to prevent threshold voltage roll-off in narrow devices |
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