SG121754A1 - Method of forming shallow trench isolation structures - Google Patents

Method of forming shallow trench isolation structures

Info

Publication number
SG121754A1
SG121754A1 SG200300209A SG200300209A SG121754A1 SG 121754 A1 SG121754 A1 SG 121754A1 SG 200300209 A SG200300209 A SG 200300209A SG 200300209 A SG200300209 A SG 200300209A SG 121754 A1 SG121754 A1 SG 121754A1
Authority
SG
Singapore
Prior art keywords
trench isolation
shallow trench
isolation structures
forming shallow
forming
Prior art date
Application number
SG200300209A
Inventor
Mukhopadhyay Madhusudan
Pey Kin San
Original Assignee
Systems On Silicon Mfg Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Systems On Silicon Mfg Company filed Critical Systems On Silicon Mfg Company
Priority to SG200300209A priority Critical patent/SG121754A1/en
Publication of SG121754A1 publication Critical patent/SG121754A1/en

Links

SG200300209A 2003-01-24 2003-01-24 Method of forming shallow trench isolation structures SG121754A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG200300209A SG121754A1 (en) 2003-01-24 2003-01-24 Method of forming shallow trench isolation structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200300209A SG121754A1 (en) 2003-01-24 2003-01-24 Method of forming shallow trench isolation structures

Publications (1)

Publication Number Publication Date
SG121754A1 true SG121754A1 (en) 2006-05-26

Family

ID=37945366

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200300209A SG121754A1 (en) 2003-01-24 2003-01-24 Method of forming shallow trench isolation structures

Country Status (1)

Country Link
SG (1) SG121754A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6251747B1 (en) * 1999-11-02 2001-06-26 Philips Semiconductors, Inc. Use of an insulating spacer to prevent threshold voltage roll-off in narrow devices
US6268264B1 (en) * 1998-12-04 2001-07-31 Vanguard International Semiconductor Corp. Method of forming shallow trench isolation
US6323092B1 (en) * 1998-12-19 2001-11-27 United Microelectronics Corp. Method for forming a shallow trench isolation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268264B1 (en) * 1998-12-04 2001-07-31 Vanguard International Semiconductor Corp. Method of forming shallow trench isolation
US6323092B1 (en) * 1998-12-19 2001-11-27 United Microelectronics Corp. Method for forming a shallow trench isolation
US6251747B1 (en) * 1999-11-02 2001-06-26 Philips Semiconductors, Inc. Use of an insulating spacer to prevent threshold voltage roll-off in narrow devices

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