CN1356368A - 连接材料 - Google Patents

连接材料 Download PDF

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CN1356368A
CN1356368A CN01142495A CN01142495A CN1356368A CN 1356368 A CN1356368 A CN 1356368A CN 01142495 A CN01142495 A CN 01142495A CN 01142495 A CN01142495 A CN 01142495A CN 1356368 A CN1356368 A CN 1356368A
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chip
insulativity
connection material
naked
circuit board
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CN1234794C (zh
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武市元秀
筱崎润二
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Dexerials Corp
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Sony Chemicals Corp
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Abstract

本发明涉及电路连接材料。作为将薄膜状的挠性电路基板3和裸IC芯片连接用的电路连接材料,含有绝缘性粘合剂及在其中分散的鳞片状或纤维状的绝缘性填料。这里,鳞片状或纤维状的绝缘性填料的纵横比至少为20。用本发明电路连接材料将挠性电路基板和裸IC芯片连接时不发生边缘接触效应。

Description

连接材料
发明领域
本发明涉及为连接挠性电路基板和裸IC芯片的连接材料，而且是实质上不使边缘接触效应发生的连接材料。
背景技术
在制造液晶显示元件模块时，历来使用在带状衬底上承载激励器IC的带运载组件(TCP)，但是为了适应布线的窄间距化；同时也为了向液晶显示元件模块组装时易于加工操作，将裸IC芯片以朝下方式直接安装在比TCP用的带状衬底更薄的、薄膜状挠性电路基板的导体图形中[CHIP ON FILM(COF)]。
如附图3所示那样，在该COF连接中，薄膜状挠性电路基板3由绝缘性薄膜1和在其上形成的导体图形2组成，裸IC芯片4的凸点5正对准该导体图形2，将各向异性导电薄膜6夹持于两者之间进行热压接，该各向异性导电薄膜6是由在热固性粘合薄膜中分散各向异性导电连接用导电粒子构成的。
发明要解决的课题
但是，当用各向异性导电薄膜6将裸IC芯片4连接时，薄膜状挠性电路基板3的绝缘性薄膜1在连接后发生热收缩，并且如附图4所示那样，位于裸IC芯体4外侧的挠性电路基板3向裸IC芯片4一侧产生翘曲现象。历来，裸IC芯片4的凸点高度为20μm左右，所以，裸IC芯片4和挠性电路基板3的导体图形2就不接触了。
然而，随着IC芯片的布线规则进一步微细化，端子数目增加；端子的间距更加狭窄；裸IC芯片的凸点直径变小；同时，凸点的高度也变成为大约历来的一半那样非常低的程度，因此，如附图5所示那样，裸IC芯片4和挠性电路基板3的导体图形2就有发生接触的场合。由于在裸IC芯片4下面形成钝化膜7，所以虽然接触也不短路，但是问题是：在为从晶片切出裸IC芯片4所设划线部分8上未形成钝化膜7，所以，特别是有时在裸IC芯片4的边缘部9上发生短路(边缘接触现象)，邻接的导体图形2的绝缘电阻值大为降低。
本发明目的在于提供：当挠性电路基板和裸IC芯片连接时，不使边缘接触现象发生的连接材料。
为解决课题的手段
本发明人发现在为将薄膜状的挠性电路基板和裸IC芯片连接的连接材料中，通过配合鳞片状或纤维状的绝缘性填料，能够达到本发明的目的，从而完成本发明。
也即，本发明是用于连接挠性电路基板和裸IC芯片的连接材料，提供以含有绝缘性粘合剂和在其中分散的鳞片状或纤维状的绝缘性填料为特征的连接材料。
发明的实施形态
以下，对本发明详细说明。
本发明的连接材料是用于连接挠性电路基板和裸IC芯片的连接材料，它是在绝缘性粘合剂中分散有鳞片状或纤维状的绝缘性填料的连接材料。鳞片状或纤维状的绝缘性填料10，如附图1所示那样，当其被夹持于裸IC芯片4的边缘部9和挠性电路基板3的导体图形2之间时，不被挤出而易于停留于该处，因此，可防止二者的直接接触(边缘接触现象)。再者，如是球状的绝缘性填料时，则它在二者之间被夹持时非常容易移动，所以不能防止边缘接触现象。
作为在本发明中所使用的鳞片状或纤维状的绝缘性填料10，为在裸IC芯片4的边缘部9和挠性电路基板3的导体图形2之间不被挤出并易于夹持，因此，理想的是使用纵横比至少20以上，更理想的是使用30以上者。这里，所谓纵横比是：当用鳞片状填料时，如附图2(a)所示那样，设厚度为t、设平面的大小(当平面近似于圆时相当于直径)为φ时是以φ/t定义的比；另一方面，当用纤维状绝缘性填料时，如附图2(b)所示那样，设直径为h、长度为L时则是以L/h定义的比。
又，以设纵横比为20以上为前提，当在连接材料中配合各向异性连接用导电粒子时，为了不发生因该导电粒子所致的电连接障碍，规定鳞片状绝缘性填料的厚度(t)在3μm以下为优选；平面大小(φ)在60μm以下为宜。又，规定纤维状绝缘性填料的直径(h)在1μm以下为宜；长度(L)以规定在20μm以下为宜。
作为如以上所说明的鳞片状绝缘性填料的具体例，可有云母、滑石、膨润土等，其中，从填充性、电绝缘性方面看来，以云母为宜。又，作为纤维状绝缘性填料的具体例，可有钛酸钾晶须、玻璃纤维、硼酸铝晶须、芳族聚酰胺纤维、碳化硅晶须等，其中，从容易取得性、配合物的物性观点看来，以钛酸钾晶须令人满意。
本发明的连接材料中的绝缘性填料的配合量如其过少，则防止边缘接触现象的效果不足；如其过多，又防碍电连接，因此，相对于绝缘性填料以外的绝缘性粘合剂等成分为100重量份时，绝缘性填料宜为5～95重量份，更好是20～90重量份。
作为在本发明连接材料中所使用的绝缘性粘合剂，可以使用一向用于连接挠性电路基板和裸IC芯片的绝缘性粘合剂。这样的绝缘性粘合剂由如下各种热固性树脂所构成：例如：(甲基)丙烯酸酯聚合物、乙烯-丙烯酸酯共聚物、乙烯-丙烯酸共聚物、乙烯-乙酸乙烯酯共聚物、聚乙烯、乙烯-丙烯共聚物、丙烯腈-丁二烯共聚物、苯乙烯-丁二烯嵌段共聚物、苯乙烯-丁二烯-苯乙烯嵌段共聚物、羧化苯乙烯-乙烯-丁二烯-苯乙烯嵌段共聚物、环氧化苯乙烯-乙烯-丁二烯-苯乙烯嵌段共聚物、苯乙烯-异戊二烯嵌段共聚物、聚丁二烯、乙烯-苯乙烯-丁烯嵌段共聚物、聚乙烯醇缩丁醛、聚乙烯醇缩甲醛、苯氧基树脂、聚酯、聚氨基甲酸乙酯、聚酰胺、聚乙烯醇缩乙醛、聚乙烯醚、聚砜、NBR、SBR、氯丁二烯橡胶、氰酸盐-酯聚合物、环氧树脂、硅氧烷树脂、酚树脂等。或者，也可使用光固化性树脂。这些化合物可单独用或2种以上结合使用，按照需要，也可使用固化剂或固化催化剂。
又，在本发明的连接材料中，按照需要可配入常用添加剂、例如：赋粘剂、老化防止剂、分散剂等。作为赋粘剂可举出：萜烯树脂、萜烯酚树脂、松香树脂类、二甲苯树脂、烷基酚树脂、二环戊二烯树脂、苯并二氢吡喃树脂、芳香系石油树脂等。作为老化防止剂可举出：烷基酚类、巯基化合物类、磷酸酯类、胺类等。又，作为分散剂可举出：非离子系、阳离子系、阴离子系、两性的表面活性剂。
当使本发明的连接材料发挥作为各向异性连接材料的作用时，使其含有各向异性连接用导电粒子。作为这样的各向异性连接用导电粒子，可利用历来在各向异性导电连接时所使用的物质，例如可使用：金、镍、钎焊料等的金属粒子，将树脂聚合物核经金属镀覆的粒了子以及再将金属镀层表面进行绝缘被覆了的粒子等。可适当地选择这些导电性粒子的粒径。
又，可预想到这样的各向异性连接用导电粒子的配合量如其过少，则难以确保确实的导通；而如其过多，则粒子之间相接触，难以做到各向异性连接，因此，相对于配合各向异性导电连接用导电粒子之前的连接材料100重量份，使各向异性导电连接用异电粒子达到1～20重量份，优选3～12重量份。
可按照通常方法将鳞片状或纤维状绝缘性填料分散于绝缘性粘合剂中来制造本发明的连接材料。又，通过再使各向异性连接用导电粒子分散来制造各向异性导电连接材料。作为这些连接材料的使用形态，按照需要可作成薄膜状、膏状或高粘性液体使用。
使用本发明的连接材料或各向异性导电连接材料将挠性电路基板和裸IC芯片连接所得的连接结构体可防止边缘接触现象并显示高度的连接可靠性。这里，作为挠性电路基板和裸IC芯片可使用与历来的挠性电路基板和裸IC芯片同样者，但也可使用凸点高度低的裸IC芯片和布线间距窄的挠性电路基板。
实施例
以下，通过实施例对本发明具体地说明。
实施例1～7和比较例1～4
将表1所示的配合成分在甲苯30重量份中以常法均匀混合，将所得混合物涂在经硅氧烷处理过的聚对苯二甲酸乙二醇酯薄膜上。使其成为干燥厚度为30μm，并干燥之，从而制得各向异性导电连接薄膜。
在凸点间距85μm的IC芯片(芯片尺寸为6.3μm四方形；被镀覆的凸点尺寸为45×45μm。凸点间隔40μm、凸点高度为10μm)和设有12μm厚的铜图形端子(镀Ni/Au)的25μm厚的聚酰亚胺绝缘膜上之间，将所制得的各向异性导电连接薄膜对准位置夹进去，在190℃温度、160N的压力下压接10秒钟，得到连接结构体。对所得的连接结构体用四端子法判定铜图形端子的初始接触电阻值以及IC芯片和铜图形端子之间的绝缘电阻值，所得结果示于表2。
再者，初始接触电阻越低越好，在实用中希望它在100mΩ以下。又，绝缘电阻值越高越好，在实用中希望它在1×106Ω以上。表1
                                                 (重量份)
                           实施例                 比较例
成分                1   2   3   4   5   6   7   1   2   3   4
环氧树脂A*1        43  43  43  43  43  43  43  43  43  43  43
环氧树脂B*2        20  20  20  20  20  20  20  20  20  20  20
胺系硬化剂*3       25  25  25  25  25  25  25  25  25  25  25导电性粒子*4           12  12  12  12  12  12   -  12  12  12  12
鳞片状绝缘填料*5   10  30  80   -   -   -  80   -   -   -   -
纤维状绝缘填料*6    -   -   -  10  30  80   -   -   -   -   -
球状绝缘填料*7      -   -   -   -   -   -   -  10  30  80   -*1：埃皮科特1009、油化壳牌环氧树脂公司制*2：埃皮科特828、油化壳牌环氧树脂公司制*3：3941HP、旭化成公司制*4：布雷特20GNR、日本合成化学公司制*5：微米云母MK-100、科普化学公司制
(t＝1μm、φ＝35μm、纵横比(t/φ)＝35)*6：体斯摩D、大琢化学公司制
(h＝0.5μm、L＝15μm、纵横比(h/L)＝30)*7：S0-E5、龙森公司制表2
      初始接触电阻(mΩ)       绝缘电阻(Ω)实施例1           7                 1×108＜
  2           7                 1×1010＜
  3           8                 1×1010＜
  4           7                 1×108＜
  5           8                 1×1010＜
  6           8                 1×1010＜
  7           7                 1×1010＜比较例1           7                 1×106＞
  2           7                 1×106＞
  3           7                 1×106＞
  4           7                 1×106＞
如从表2所了解的那样，含有鳞片状或纤维状绝缘填料的实施例1～7的电路连接材料，其初始接触电阻和绝缘电阻二者之值均令人满意。
然而，不含有鳞片状或纤维状绝缘性填料而含有球状绝缘性填料的比较例1～4的连接材料其初始接触电阻没有问题，但其绝缘电阻则下降到比1～106Ω低，可知它不能充分防止边缘接触现象。
发明的效果
按照本发明的连接材料，当将挠性电路基板和裸IC芯片连接时，能使其不产生边缘接触现象那样地进行连接。
附图的简单说明
附图1是用本发明的连接材料连接的裸IC芯片和挠性电路基板的边缘部的部分放大图；
附图2是在本发明中所使用的鳞片状绝缘性填料的斜视图(a)和纤维状绝缘性填料的斜视图(b)；
附图3是对历来的COF连接的说明图；
附图4是历来COF连接的缺点说明图；
附图5是历来COF连接的缺点说明图。
符号的说明
1：绝缘性薄膜；2：导体图形；3：挠性电路基板；4：裸IC芯片；5：凸点；6：各向异性导电薄膜；7：钝化膜；8：划线部分；9：边缘部；10：绝缘性填料

Claims (8)

1.一种连接材料，它是为将挠性电路基板和裸IC芯片连接的连接材料，其特征在于：含有绝缘性粘合剂和在其中分散的鳞片状或纤维状的绝缘性填料。
2.按照权利要求1所记载的连接材料，其特征在于：鳞片状或纤维状的绝缘性填料的纵横比至少为20。
3.按照权利要求1或2所记载的连接材料，其特征在于：鳞片状绝缘性填料是云母。
4.按照权利要求1或2所记载的连接材料，其特征在于：纤维状绝缘性填料是钛酸钾晶须。
5.按照权利要求1～4中任一项所记载的连接材料，其特征在于：以绝缘性填料以外的成分作为100重量份，则在该连接材料中含有绝缘性填料20～90重量份。
6.一种各向异性导电连接材料，其特征在于：以权利要求1～5中任一项所记载的连接材料为100重量份，含有各向异性导电连接用导电粒子1～20重量份。
7.一种连接结构体，其特征在于：用权利要求1～5中任一项所记载的连接材料将挠性电路基板和裸IC芯片连接。
8.一种连接结构体，其特征在于：用权利要求6所记载的各向异性导电连接材料将挠性电路基板和裸IC芯片连接。
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