CN1180046C - 粘接材料及电路连接方法 - Google Patents
粘接材料及电路连接方法 Download PDFInfo
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Abstract
一种连接具有突起状电极的电子元器件的突起状电极与用于搭载电子元器件的布线基板的端子电极的粘接材料,包含有至少一种可固化树脂和无机粒子,使用比表面积S(m2/g)满足3<S≤17,其平均粒径D1(μm)≤5和最大粒径D2(μm)≤0.5(h1+h2)(h1与h2为两电极的高度)的材料作为无机粒子;这种粘接材料包含有占体积10~60%的这种无机粒子。该粘接材料具有良好的连接可靠性,并能消除所连接的电极之间距离的离散性。
Description
发明涉及连接具有突起状电极的半导体元件等电子元器件的突起状电极和用于搭载电子元器件的布线基板的端子电极的粘接材料。
以往,在手持电话等便携式电子机器的主机板上安装有把半导体元件装在比它的表面积更大的组装基板上的IC插件,但是,近年来随着电子机器轻薄短小化和高功能化的进展,以裸片状态把半导体元件倒装在主机板上,并使用安装在与半导体元件大致同样大小的组装基板上的芯片插件(CSP),以此来取代原来的IC插件。在这些情况下,当把裸片或CSP的突起状电极连接在主机板的连接端子上时,使用液态、浆状或薄膜状绝缘性粘接剂或将导电性粒子分散在这些绝缘性粘接剂内的浆状或薄膜状各向异性的导电粘接剂。
可是,用这样的粘接剂连接起来的连接部位上,由于存在裸片(或CSP)与主机板之间的热线膨胀率之差,所以应力集中于裸片的突起状电极上,经常发生起皮、剥离、表浮现象,招致通导阻抗的增大以及连接不良的发生,使连接可靠性大幅度地下降。
由于裸片的突起状电极的高度参差不齐,使得相面对的裸片的突起状电极与主机板的连接端子之间的间距也不均匀,不能提高连接的可靠性。
为了确保裸片与主机板之间的连接可靠性,提出了一种解决方案(日本专利申请公开JP-A-11-061088),即:按照对100重量份的粘接树脂组合物用5~200份的比例将平均粒径为3μm以下的无机填料配合于绝缘性粘接剂或各向异性导电粘接剂中,使黏度增大来提高其粘接力。
但是,如日本专利申请公开JP-A-11-061088记载的那样,即使简单地规定了无机填料的粒径和配比,也不能保证裸片与主机板之间的足够的连接可靠性。
为解决上述的技术问题,本发明的目的是提供一种粘接材料,不仅能够把具有突起状电极的半导体元件等电子元器件的突起状电极与主机板等布线基板的端子电极连接起来,而且能够消除它们之间的间距的离散性,从而能够实现良好的连接可靠性。
使用含有至少一种可固化树脂与无机粒子的粘接材料连接具有突起状电极的半导体元件等电子元器件的突起状电极与用于搭载电子元器件的布线基板的端子电极时,不仅仅需要规定使用的无机粒子的平均粒径及配比,而且应当把无机粒子的比表面积设定在规定的范围之内,再把粒子的最大粒径设定在电子元器件突起状电极高度与布线基板的端子电极高度之和的一半以下,本发明人发现这样就能够实现上述的目的,并一直完成了本发明。
本发明提供一种连接具有突起状电极的电子元器件(最好是裸片等半导体元件)的突起状电极与用于搭载电子元器件的布线基板的端子电极的粘接材料,这种粘接材料包含有至少一种可固化树脂和无机粒子,其特征在于无机粒子的比表面积S(m2/g)满足如下(1)式,其平均粒径D1(μm)和最大粒径D2(μm)分别满足如下(2)式和(3)式:
3<S≤17 ……(1)
D1≤5 ……(2)
D2≤0.5(h1+h2) ……(3)
(式中:h1是电子元器件的突起状电极的电极高度(μm),h2是布线基板的端子电极的电极高度(μm));而且该粘接材料以体积的10~60%的配比包含有上述的无机粒子。
本发明提供一种电路连接方法,用包含有至少一种硬化树脂和无机粒子的粘接材料连接具有突起状电极的电子元器件(最好是裸片等半导体元件)的突起状电极与用于搭载电子元器件的布线基板的端子电极,其特征在于使用把无机粒子按照体积的10~60%的配比分散在可固化树脂内而形成的材料作为粘接材料;所述无机粒子的比表面积S(m2/g)满足如下(1)式,其平均粒径D1(μm)和最大粒径D2(μm)分别满足如下(2)式和(3)式:
3<S≤17 ……(1)
D1≤5 ……(2)
D2≤0.5(h1+h2) ……(3)
(式中:h1是电子元器件的突起状电极的电极高度(μm),h2是布线基板的端子电极的电极高度(μm))。
以下对本发明作详细说明。
本发明的粘接材料是用来连接具有突起状电极的电子元器件的突起状电极与用于搭载电子元器件的布线基板的端子电极的粘接材料,包含有至少一种可固化树脂和无机粒子。这里,作为无机粒子,用BET法测定出来的比表面积S(m2/g)必须满足如下(1)式;用科尔德(Coulter)计数法测定出来的平均粒径(三次测量10万个粒子得到的结果的平均值)D1(μm)和最大粒径D2(μm)必须分别满足如下(2)式和(3)式:
3<S≤17 ……(1)
D1≤5 ……(2)
D2≤0.5(h1+h2) ……(3)
(式中:h1是电子元器件的突起状电极的电极高度(μm),h2是布线基板的端子电极的电极高度(μm))。在无机粒子的比表面积S低于3m2/g的情况下,粒子直径就太大,这可能会损伤电子部件粘接面的保护膜,但是比表面积S高于17m2/g时,粘接材料的流动性降低,就需要加大粘接压力,这样会降低粘接的操作性,结果,难于消除具有突起状电极的电子元器件的突起状电极与主机板等布线基板的端子电极之间的距离的离散性。当无机粒子的平均粒径D1(μm)超过5μm时,突起状电极与布线基板的端子电极之间残存的无机粒子阻碍电气连接的概率就高;当无机粒子的最大粒径D2(μm)超过电子元器件突起状电极高度h1(μm)与布线基板的端子电极的电极高度h2(μm)之和的一半时,无机粒子过大,可能会损伤电子部件粘接面的保护膜。
无机粒子的最大粒径D2(μm)在一般情况下最好不要超过15μm。
作为无机粒子,其平均粒径D1(μm)最好满足如下(4)式:
0.1(h1+h2)≥D1……(4)
这样的无机粒子在粘接材料中的配比是占体积的10~60%,最好是20~50%。若不足体积的10%,则难以达到电气连接的可靠性;如果超过体积的60%,连接时的粘接材料的流动性明显变差,这种情况下也难于获得良好的连接。
作为上述无机粒子的材料,可以采用氧化铝、二氧化硅等金属氧化物以及氮化铝、氮化硅等金属氮化物,也可以对这些材料实施公知的耐水性处理。
作为构成粘接材料的可固化树脂,可以采用原来的那种把半导体元件倒装在主机板上时用作粘接成分的热可固化树脂,例如:环氧树脂、聚氨脂树脂、不饱和聚酯树脂等。再就是具有通过特定波长的紫外线等反应的官能团的可固化树脂,例如:丙烯酸酯系树脂、甲基丙烯酸酯系树脂等。也可以把上述这些材料的两种以上混在一起来使用。
在本发明中,使用100℃时黏度在500cps以下最好是200cps以下的液态可固化树脂作为至少一种可固化树脂,从确保粘接材料的操作性(涂布性)的角度来看,是比较好的。这样的100℃时黏度在500cps以下的可固化树脂在可固化树脂整体配比中最好是至少为20%(重量)。
在本发明的粘接材料中可以配入固化剂,可以使用咪唑系固化剂、酸酐系固化剂、酰肼系固化剂、双氰胺系固化剂等。其中,使用把上述固化剂经潜化后的潜在固化剂也很好。
本发明的粘接材料中还可以包含有平均粒径为0.5~0.8μm的导电粒子,因此,可以使用粘接材料作为各向异性导电粘接剂。作为这样的导电粒子,可以使用原来的各向异性导电粘接剂中所使用的导电粒子,例如:锡、镍等金属粒子、在树脂粒子表面上形成金属镀层的复合粒子、在这些粒子表面上形成绝缘膜的粒子等。导电粒子的配比可以根据导电粒子的种类和粘接剂用途灵活决定。
在85℃、85%RH气氛之下,使以上的粘接材料的吸湿率达到重量的1.5%以下,这样,就可以防止水分侵入本发明的粘接材料的适用对象即具有突起状电极的电子元器件和布线基板的连接端子之间的结合部中去,进而能够提高连接可靠性。
可以用如下方法来计算粘接材料的吸湿率,即:把成型为圆筒形(直径5mm、高度15mm)的粘接材料在130℃下干燥1小时,再在85℃、85%RH气氛之下放置168小时,测量其重量变化,由此来计算其吸湿率。
可以把可固化树脂、无机粒子以及各种必要的添加剂均匀地混合在一起配制成本发明的粘接材料。这种情况下,调节可固化树脂整体中的液态可固化树脂的配比,就可以使粘接材料形成为液态~浆状。在构成薄膜状粘接材料的情况下,是把可固化树脂、无机粒子以及各种必要的添加剂均匀地混合在溶剂中,调制成涂布液,把涂布液涂敷在剥离薄板上,然后进行干燥。
作为搭载电子元器件的布线基板,并无特殊限制,可以使用原来的硬基板,也可以使用柔性基板。
以上说明的本发明的粘接材料可以很好地适用于连接具有突起状电极的电子元器件突起状电极与用于搭载电子元器件的布线基板的端子电极的电路连接方法。
以下对本发明作具体说明。
图1是粘接材料的操作性评价用连接体的截面图。图中1代表粘接材料,2代表模拟芯片,3代表玻璃基板。
实施例1~8和比较例1~7
把表1所示的二氧化硅按表2和表3所示的配比以及体积含有量(%)与甲苯一起混合在20重量份环氧树脂(4032D(黏度200cps/100℃);大日本墨水工业公司制)、20重量份环氧树脂(EP828(黏度150cps/100℃);油化壳牌环氧公司制)、20重量份苯氧基树脂(YP50,东都化成公司制)以及40重量份咪唑固化剂(HX3941,旭化成公司制)的混合物中调制成粘接材料的涂布液;把该涂布液涂敷在剥离板上,使其干燥厚度为40μm;再在热风循环炉中进行干燥,制作成薄膜状粘接材料(下称粘接膜)。
[表1]
使用二氧化硅 | 平均粒径D1(μm) | 最大粒径D2(μm) | BET比表面积S(m2/g) |
二氧化硅1 | 0.5 | 15 | 3 |
二氧化硅2 | 0.5 | 8 | 17 |
二氧化硅3 | 3 | 8 | 95 |
二氧化硅4 | 1.5 | 8 | 11 |
二氧化硅5 | 0.5 | 35 | 4 |
二氧化硅6 | 0.5 | 10 | 20 |
[表2] (重量份)
实 施 例 | ||||||||
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | |
二氧化硅1 | 70 | 100 | 150 | - | - | - | - | - |
二氧化硅2 | - | - | - | 100 | - | - | - | - |
二氧化硅4 | - | - | - | - | 30 | 100 | 150 | 200 |
体积含有率(%) | 28 | 35 | 45 | 35 | 14 | 35 | 45 | 52 |
[表3] (重量份)
比 较 例 | |||||||
1 | 2 | 3 | 4 | 5 | 6 | 7 | |
二氧化硅2 | 15 | - | - | - | - | - | - |
二氧化硅3 | - | 30 | 100 | - | - | - | - |
二氧化硅5 | - | - | - | 30 | 100 | - | - |
二氧化硅6 | - | - | - | - | - | 30 | 100 |
体积含有率(%) | 7.6 | 14 | 35 | 14 | 35 | 14 | 35 |
对各实施例和各比较例中的粘接材料的吸湿率、连接可靠性、操作性(压入)分别进行了评价。
吸湿率(%)
把各实施例和各比较例的粘接材料成型为圆筒形(直径5mm,高15mm),再在130℃下干燥1小时,接着测其重量,然后把上述成型物在85℃、85%RH气氛下放置168小时,再次测其重量,从两次计量结果之差(即重量的变化)计算出吸湿率,所得到的结果表示在表4中。
连接可靠性
在硅IC芯片与玻璃环氧基板之间配置各实施例和各比较例的粘接膜,使用倒装连接器把两者连接起来,形成连接体(连接条件:180℃、20秒、100g/冲击)。上述硅IC芯片(6.3mm2/0.4mm厚)设置有处于背面的160个高度为20μm的镀金突起(高h1=20μm/150μm节距);玻璃环氧基板(40mm2/0.6mm厚)形成有镀了镍-金的铜布线(厚度(电极高度)h2=12μm)。
在电极连接完了之后,把连接体在30℃、70%RH气氛下放置186小时,接着再在240℃(最高)的回流炉中通过两次。用4端子法测定连接部位的阻抗,然后进行200小时的加压蒸煮处理(121℃、2.1大气压、100%RH),再次测定连接阻抗,求出加压蒸煮处理前后的阻抗上升变化(ΔΩ)。在连接部位的阻抗上升不足0.5Ω(好的情况)时,把这种情况评价为「○」;阻抗上升超过0.5Ω或出现开路不良的情况评价为「×」。所得到的结果表示在表4中。
操作性
如图1所示,把实施例1、2和3及比较例3和7的粘接材料1配置在硅虚拟芯片2(6.3mm2/0.4mm厚)和无电路的玻璃基板3(15mm×80mm/1.2mm厚)之间,在表5所示的压入力条件下,在180℃下热压20秒钟。通过连接体X-X截面观察测量不同压力(kgf)下的芯片的压入量(μm),所得到的结果表示于表5中。通常,所希望的结果是在1kgf的压入力下,压入量为10μm以上,用2kgf的压入力时,压入量为15μm以上。
[表4]
粘接膜 | 吸湿率(%) | 连接可靠性(ΔΩ)/评价 |
实施例1 | 2.0 | 0.21/○ |
2 | 1.7 | 0.23/○ |
3 | 1.0 | 0.28/○ |
4 | 1 3 | 0.17/○ |
5 | 1.7 | 0.39/○ |
6 | 1.3 | 0.18/○ |
7 | 1.1 | 0.09/○ |
8 | 0.8 | 0.07/○ |
比较例1 | 2.2 | 1.31/× |
2 | 1.7 | 2.95/× |
3 | 1.6 | */× |
4 | 1.9 | 1.64/× |
5 | 1.6 | 0.84/× |
6 | 2.0 | 2.16/× |
7 | 1.5 | */× |
*从连接开始就不导通
[表5]
粘接膜 | 压入力(kgf) | 压入量(μm) |
实施例1 | 2 | 20 |
实施例2 | 1 | 10 |
2 | 18 | |
4 | 29 | |
实施例3 | 2 | 12 |
比较例3 | 1 | 7 |
2 | 15 | |
4 | 24 | |
比较例7 | 1 | 1 |
2 | 3 | |
4 | 7 |
从表4可知,满足式(1)~(3)关系的实施例1~实施例8的粘接膜显示了良好的连接可靠性。从表5可知,至少实施例1~实施例3的粘接膜的操作性都是好的。
二氧化硅的体积含量降低下限(10%)的比较例1的粘接膜的吸湿率较高,而且连接可靠性也不够高。另外,使用了BET比表面积大幅度提高上限(17m2/g)的二氧化硅的比较例2和比较例3的粘接膜的连接可靠性是不充分的。比较例4和比较例5的粘接膜使用了最大粒径不满足式(3)的二氧化硅,其连接可靠性也不充分。使用BET比表面积稍稍提高了上限(17m2/g)的二氧化硅的比较例6和比较例7的粘接膜的连接可靠性也是不充分的。
关于比较例3和比较例7的粘接膜,从表5可知,使用比表面积为17m2/g以下的无机粒子可以确保连接时的操作性。
按照本发明的粘接材料,可以消除具有突起状电极的半导体元件等电子元器件的突起状电极与主机板等的布线基板端子电极之间距离的离散,并能够以良好的连接可靠性实现两个电极之间的电气连接。
Claims (9)
1.一种连接具有突起状电极的电子元器件的突起状电极与用于搭载电子元器件的布线基板的端子电极的粘接材料,这种粘接材料包含有至少一种热固性树脂和二氧化硅,其特征在于二氧化硅的比表面积S(m2/g)满足如下(1)式,其平均粒径D1(μm)和最大粒径D2(μm)分别满足如下(2)式和(3)式:
11<S≤17 ……(1)
D1≤5 ……(2)
D2≤0.5(h1+h2) ……(3)
式中:h1是电子元器件的突起状电极的电极高度(μm),h2是布线基板的端子电极的电极高度(μm);而且该粘接材料以体积的35~52%的配比包含有上述的二氧化硅。
2.根据权利要求1的粘接材料,其特征在于二氧化硅的平均粒径D1进一步满足如下(4)式
0.1(h1+h2)≥D1 ……(4)。
3.根据权利要求1或2的粘接材料,其特征在于所述热固性树脂在100℃的黏度为500cps以下。
4.根据权利要求1或2中任一项的粘接材料,其特征在于还含有平均粒径为0.5~0.8μm的导电性粒子。
5.根据权利要求1或2中任一项的粘接材料,其特征在于在85℃、85%相对湿度下的吸湿率是1.5(重量)%以下。
6.根据权利要求1或2的任一项的粘接材料,其特征在于电子元器件是半导体元件。
7.一种电路连接方法,用包含有至少一种热固性树脂和二氧化硅的粘接材料连接具有突起状电极的电子元器件的突起状电极与用于搭载电子元器件的布线基板的端子电极,其特征在于使用把二氧化硅按照体积的35~52%的配比分散在热固性树脂内形成的材料作为粘接材料;所述二氧化硅的比表面积S(m2/g)满足如下(1)式,其平均粒径D1(μm)和最大粒径D2(μm)分别满足如下(2)式和(3)式:
11<S≤17 ……(1)
D1≤5 ……(2)
D2≤0.5(h1+h2) ……(3)
式中:h1是电子元器件的突起状电极的电极高度(μm),h2是布线基板的端子电极的电极高度(μm)。
8.根据权利要求7的电路连接方法,其特征在于二氧化硅的平均粒径D1进一步满足如下(4)式
0.1(h1+h2)≥D1 ……(4)。
9.根据权利要求7或8的电路连接方法,其特征在于电子元器件是半导体元件。
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JP2005195690A (ja) * | 2003-12-26 | 2005-07-21 | Toshiba Corp | 金属含有樹脂粒子、樹脂粒子、及び電子回路の製造方法 |
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-
1999
- 1999-08-19 JP JP23330099A patent/JP3417354B2/ja not_active Expired - Fee Related
-
2000
- 2000-08-03 US US09/631,280 patent/US6632320B1/en not_active Expired - Lifetime
- 2000-08-05 TW TW089115770A patent/TWI247031B/zh not_active IP Right Cessation
- 2000-08-17 DE DE60045700T patent/DE60045700D1/de not_active Expired - Lifetime
- 2000-08-17 EP EP00117713A patent/EP1087436B1/en not_active Expired - Lifetime
- 2000-08-18 KR KR1020000047688A patent/KR100818576B1/ko not_active IP Right Cessation
- 2000-08-19 CN CNB001286064A patent/CN1180046C/zh not_active Expired - Fee Related
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2003
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2007
- 2007-12-17 KR KR1020070132256A patent/KR100923035B1/ko not_active IP Right Cessation
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Also Published As
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US6632320B1 (en) | 2003-10-14 |
DE60045700D1 (de) | 2011-04-21 |
KR100818576B1 (ko) | 2008-04-01 |
CN1296053A (zh) | 2001-05-23 |
JP2001060601A (ja) | 2001-03-06 |
KR20090100323A (ko) | 2009-09-23 |
KR20010050112A (ko) | 2001-06-15 |
US20040029992A1 (en) | 2004-02-12 |
KR20080012247A (ko) | 2008-02-11 |
KR100923035B1 (ko) | 2009-10-22 |
EP1087436B1 (en) | 2011-03-09 |
JP3417354B2 (ja) | 2003-06-16 |
EP1087436A3 (en) | 2002-09-25 |
TWI247031B (en) | 2006-01-11 |
EP1087436A2 (en) | 2001-03-28 |
KR100989535B1 (ko) | 2010-10-25 |
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