CN101689410A - 电路连接材料、使用它的电路构件的连接结构及电路构件的连接方法 - Google Patents

电路连接材料、使用它的电路构件的连接结构及电路构件的连接方法 Download PDF

Info

Publication number
CN101689410A
CN101689410A CN200880022073A CN200880022073A CN101689410A CN 101689410 A CN101689410 A CN 101689410A CN 200880022073 A CN200880022073 A CN 200880022073A CN 200880022073 A CN200880022073 A CN 200880022073A CN 101689410 A CN101689410 A CN 101689410A
Authority
CN
China
Prior art keywords
circuit
conducting particles
electrode
circuit member
connection material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN200880022073A
Other languages
English (en)
Other versions
CN101689410B (zh
Inventor
富坂克彦
小林宏治
竹田津润
有福征宏
小岛和良
望月日臣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lishennoco Co ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of CN101689410A publication Critical patent/CN101689410A/zh
Application granted granted Critical
Publication of CN101689410B publication Critical patent/CN101689410B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/16—Solid spheres
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/02—Ingredients treated with inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/05611—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05666—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05669—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05671—Chromium [Cr] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29439—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29455—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/2954—Coating
    • H01L2224/29599—Material
    • H01L2224/29698—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29798—Fillers
    • H01L2224/29799—Base material
    • H01L2224/2989—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01044—Ruthenium [Ru]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01076—Osmium [Os]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50—Fixed connections
    • H01R12/51—Fixed connections for rigid printed circuits or like structures
    • H01R12/52—Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0218—Composite particles, i.e. first metal coated with second metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0221—Insulating particles having an electrically conductive coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/256—Heavy metal or aluminum or compound thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Conductive Materials (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

本发明提供一种电路连接材料(10)，其含有粘结剂组合物(11)和导电粒子(12)，导电粒子(12)是核体(21)上具有1个或2个以上金属层(22)并具有突起(14)的导电粒子，至少在上述突起(14)的表面上形成了金属层(22)，该金属层(22)由镍或镍合金构成，导电粒子(12)发生20％压缩时的压缩弹性模量为100～800kgf/mm2。

Description

电路连接材料、使用它的电路构件的连接结构及电路构件的连接方法
技术领域
本发明涉及电路连接材料、用其形成的电路构件的连接结构及电路构件的连接方法。
背景技术
在液晶显示用玻璃板上安装液晶驱动用IC时，采用通过电路连接构件直接在玻璃板上接合液晶驱动用IC的CHIP-ON-GLASS安装(以下称为COG安装)方法、或将液晶驱动用IC接合在具有金属配线的柔性带上，并用电路连接构件与玻璃板接合的CHIP-ON-FLEX安装(以下称为COF安装)方法。这种形成有微细电路的电路构件的相互连接，对于以往的焊锡或橡胶连接器来说难以适应，因此要使用具有各向异性导电性的粘结剂组合物。
与此相对，伴随着近年来液晶显示的高精细化，电路构件上形成的电路电极正在向高密度化发展。因此，存在着电路电极的进一步微细化，即向多电极化及窄间距化等高精细化发展的趋势，高精细液晶模块上需要高连接可靠性。一方面，电路电极的形成是通过在基板的整个面上形成作为电路基础的金属，在电路电极部位涂布抗蚀剂并进行固化，再使用酸或碱除去蚀刻掉其它部分的工序进行实施的，但是在上述高密度化电路的情况下，如果在基板整个面上形成的金属凹凸大，则由于凹部和凸部的蚀刻时间不同，因此存在着不能进行精密地蚀刻，相邻电路间产生短路或断线的问题。因此，希望高密度电路的电极表面凹凸小，即电极表面平坦，但是使用以往的电路连接材料连接这种相对置的平坦电路电极彼此时，电路连接材料中含有的导电粒子和平坦电极之间残留有粘结剂树脂，存在着不能确保电路电极之间达到足够的电连接及长期的连接可靠性的问题。
而且，在液晶模块的制造工序中，有时使用由容易在表面上形成氧化膜的金属材料构成的电路电极，使用以往的电路连接材料的话，就不能在确保导电粒子突破氧化膜而进行电连接及确保长期连接可靠性两方面同时达到高水平。
因此，已研究出了通过在导电粒子表面上设置多个突起部分，从而在电路连接时利用突起贯穿导电粒子和平坦电极间的粘结剂组合物并与电路电极接触的方法(参见专利文献1)；以及利用在基材粒子的表面上设置多个金属微粒，并且用金属镀层覆盖至少一部分表面而形成的导电粒子，即使对于容易形成氧化膜的电路电极也能确保电连接及长期连接可靠性的方法(参见专利文献2)。
专利文献1：日本特开2005-166438号公报
专利文献2：国际公开第07/058159号小册子
发明内容
发明所要解决的问题
但是，即使使用上述方法，根据电路电极的材质等情况的不同，有时也不能确保初始的电连接及良好的连接可靠性，效果不明显。
本发明是鉴于这种情况做出的，目的是提供能够使相对置的电路电极相互间达到良好的电连接，同时可充分提高电路电极间电气特性的长期可靠性的电路连接材料、使用它的电路构件的连接结构及电路构件的连接方法。
解决问题的方法
解决问题的手段
为了解决上述问题，本发明人等进行了深入研究，结果发现上述问题产生的原因在于导电粒子最外层的材质。即，以往的电路连接材料中含有的导电粒子的最外层为Au金属膜，尽管电路连接时导电粒子和平坦电极间的粘结剂组合物被突起贯穿，由于Au是比较软的金属，导电粒子的最外层相对于电路电极发生变形，不容易深入到电路电极中。
因而，为解决上述问题，本发明人等又反复进行了深入研究，结果发现通过将导电粒子最外层的材质改为比Au更硬的金属，就提高了连接可靠性，从而完成了本发明。
本发明提供一种电路连接材料，其中含有粘结剂组合物和导电粒子，导电粒子是核体上具有1个或2个以上金属层并具有突起的导电粒子，至少在突起的表面上形成了金属层，该金属层由镍或镍合金构成，导电粒子发生20％压缩时的压缩弹性模量为100～800kgf/mm2。
就本发明的电路连接材料而言，在制作电路构件的连接结构时，介于两个电路构件(以下，根据情况称为“第一及第二电路构件”)之间，被用作介于电路构件并进行加热加压后使电路电极之间进行电连接的电路连接用各向异性导电性粘结剂。如果采用本发明的电路连接材料，与导电粒子的金属层(最外层)为Au的情况相比，可以通过导电粒子使相对置的电路电极之间达到更好的电连接，同时也可以进一步提高电路电极间电气特性的长期可靠性。即，即使粘结剂组合物的固化物进入导电粒子和电路电极之间，通过在导电粒子的表面侧设置突起，由该导电粒子施加到粘结剂组合物固化物上的压力，与没有突起的导电粒子相比足够大，导电粒子的突起可容易地贯穿粘结剂组合物固化物，另外也在一定程度上侵入到电路电极中，从而可以增加导电粒子和电路电极的接触面积。而且，由于作为导电粒子最外层的镍(Ni)或镍合金比Au更硬，导电粒子的最外层更容易侵入电路电极，可以增加导电粒子和电路电极的接触面积，由此可以得到更良好的电连接及电气特性的长期可靠性。而且，通过使导电粒子发生20％压缩时的压缩弹性模量为100～800kgf/mm2，导电粒子的最外层容易侵入电路电极，因此可以得到充分的电连接。除此之外，即使随着温度变化电路电极之间的间隔变大，导电粒子也可以充分追随电路电极间隔的扩大，确保了长期连接可靠性。
在上述电路连接材料中，导电粒子的突起高度优选为65～500nm。另外，对于导电粒子，相邻突起间的距离优选为1000nm以下。通过使导电粒子的突起高度及相邻突起间的距离处于上述范围内，可以使导电粒子的突起更容易贯穿粘结剂组合物的固化物，可以获得更好的电连接及电气特性的长期可靠性。
优选粘结剂组合物含有膜形成材料、环氧树脂及潜伏性固化剂。由此，本发明可以更切实地实现上述效果。
本发明提供一种电路构件的连接结构，其具备形成了电路电极且电路电极以相对方式进行配置的两个电路构件，和介于电路构件之间并在加热加压后使电路电极进行电连接的电路连接构件，电路连接构件是本发明的电路连接材料或其固化物。该电路构件的连接结构是使用上述电路连接材料制作的，因此可以使电路电极之间达到良好的电连接。这样，介着导电粒子相对置的电路电极之间的良好电连接状态，可以通过粘结剂组合物的固化物得到长时间的保持，由此可以充分提高电气特性的长期可靠性。
在上述连接结构中，可以是两个电路构件中的至少一方为IC芯片。在上述连接结构中，可以是两个电路构件的电路电极中的至少一方的表面由选自金、银、锡、铂族金属、铝、钛、钼、铬、铟-锡氧化物(ITO)及铟-锌氧化物(IZO)中的至少一种构成。在上述连接结构中，可以是两个电路构件中的至少一方的表面上用选自氮化硅、有机硅化合物及聚酰亚胺树脂中的至少一种物质进行涂敷或附着处理。
本发明提供一种电路构件的连接方法，其中，在形成了电路电极且电路电极以相对方式进行配置的两个电路构件之间夹入本发明的电路连接材料，加热加压而使电路电极进行电连接。按照这种连接方法，由于使用了本发明的电路连接材料，可以确保良好的电连接及长期连接可靠性。
发明效果
根据本发明，可以提供即使所要连接的电路电极的表面是平坦的，并且/或即使是容易形成氧化膜的电路电极，仍可以使相对置的电路电极彼此之间达到良好的电连接，同时可以充分提高电路电极间电气特性的长期可靠性的电路连接材料、使用它的电路构件的连接结构以及用于获得该结构的电路构件的连接方法。
附图说明
图1是显示使用本发明涉及的电路连接材料的电路构件的连接结构的一个实施方式的断面图。
图2是显示构成本发明涉及的电路连接材料的导电粒子的各种形态的断面图。
符号说明
1是电路构件的连接结构、10是电路连接材料、11是粘结剂成分(粘结剂组合物)、12是导电粒子、14是突起(突起部分)、21是核体、21a是中心核部分、21b是突起部分、22是金属层、30是第一电路构件、31是电路基板(第一电路基板)、31a是主面、32是电路电极(第一电路电极)、40是第二电路构件、41是电路基板(第二电路基板)、41a是主面、42是电路电极(第二电路电极)、T1是导电粒子导致的第一电路电极的凹陷、T2是导电粒子导致的第二电路电极的凹陷、H是导电粒子的突起部分的高度、S是相邻突起部分之间的距离。
具体实施方式
以下，参照图1～图2对本发明的优选实施方式进行详细说明。还有，在附图说明中，相同的要素采用相同的符号，省去重复说明。另外，为方便图示，附图的尺寸比例不一定与说明的相一致。
图1是显示使用本发明涉及的电路连接材料的电路构件的连接结构的概略性断面图。本实施方式的电路构件的连接结构1具备相互对置的第一电路构件30及第二电路构件40，第一电路构件30及第二电路构件40之间设置了连接它们的电路连接材料10。
第一电路构件30具备电路基板(第一电路基板)31和形成于电路基板31的主面31a上的电路电极(第一电路电极)32。第二电路构件40具备电路基板41和形成于电路基板41的主面41a上的电路电极(第二电路电极)42。
在电路基板31、41上，电路电极32、42的表面是平坦的。还有，此处所说的“电路电极的表面是平坦的”是指电路电极表面的凹凸十分小，表面凹凸优选为20nm以下。
电路电极32、42的厚度最好为50nm以上。厚度不足50nm时，电路连接材料中的导电粒子12的表面侧存在的突起部分14在压合时可能会贯穿电路电极32、42而与电路基板31、41接触。在这种情况下，电路电极32、42和导电粒子12的接触面积减少，容易导致连接电阻上升。另外，从制造成本等方面考虑，电路电极32、42的厚度优选为1000nm以下，更优选为500nm以下。
作为电路电极32、42的材质，可以列举Au、Ag、Sn、Pt族金属(例如钌、铑、钯、锇、铱、铂)或ITO、IZO、Al、Cr、Mo、Ti等，但是特别是电路电极32、42的材质为ITO或IZO时，电连接明显好，可发挥本发明的效果。另外，电路电极32、42可以整体由上述材质构成，也可以是仅最外层由上述材质构成。
电路基板31、41的材质没有特别的限制，通常为有机绝缘性物质、玻璃或硅。
作为第一电路构件30及第二电路构件40的具体例子，可以列举半导体芯片(IC芯片)、电阻芯片、电容器芯片等芯片部件、带载封装(TCP)、柔性电路基板(FPC)、印刷电路板、玻璃基板等。在这些电路构件30、40上，通常设置多个(根据情况也可以是一个)电路电极(电路端子)32、42。作为电路构件的连接结构1的形态，也有IC芯片和芯片搭载基板的连接、电路的相互连接、COG安装或COF安装中IC芯片和玻璃基板或柔韧性带的连接等形态。特别优选第一及第二电路构件30、40中的至少一方为IC芯片。
另外，对于上述实施方式，电路构件的连接结构1中未设置绝缘层，但是在第一电路构件30中，也可以在第一电路电极32和电路基板31之间进一步形成绝缘层，在第二电路构件40中，也可以在第二电路电极42和电路基板41之间进一步形成绝缘层。
绝缘层没有特别的限制，只要由绝缘材料构成即可，但是通常由有机绝缘性物质、二氧化硅或氮化硅构成。特别地，优选第一及第二电路构件30、40中的至少一方的表面用选自氮化硅、有机硅化合物、聚酰亚胺的至少一种物质进行涂敷或附着处理。如果采用上述电路连接材料10，对于这种电路构件30、40的粘接强度特别好。
电路连接材料10含有具备绝缘性的粘结剂成分(粘结剂组合物)11和导电粒子12。关于导电粒子12的详细情况在后文描述，但是如图2(a)～(b)所示，其表面侧具有多个突起部分14。
这样，在该电路构件的连接结构1中，相对置的第一电路电极32和第二电路电极42通过导电粒子12进行电连接。即，导电粒子12与电路电极32、42双方直接接触。具体来说，导电粒子12的突起部分14贯穿粘结剂成分(粘结剂组合物)11而与第一电路电极32、第二电路电极42接触。
因此，电路电极32、42之间的连接电阻得到了充分降低，电路电极32、42之间可以形成良好的电连接。因此，可以使电路电极32、42之间的电流流动达到平滑，能够充分发挥保持回路的功能。
优选导电粒子12的多个突起部分14中的一部分突起部分14以在第一电路电极32或第二电路电极42上分别产生凹陷T1、T2的方式侵入进去。在这种情况下，导电粒子12的突起部分14和电路电极32、42的接触面积进一步增加，可以使连接电阻进一步降低。
在电路构件的连接结构1中，优选第二电路电极32、第二电路电极42中的至少一方的表面积为3000μm2以下，并且第一回路电极32和第二回路电极42之间的平均导电粒子数为15个以上。此处，平均导电粒子数是指相对于每1个电路电极的导电粒子数的平均值。在这种情况下，相对置的电路电极32、42之间的连接电阻可得到充分降低。
以下，对电路连接构件10进行详细说明。电路连接构件10呈膜状，如以上所述，是对含有表面侧带有突起部分14的导电粒子12和粘结剂组合物的电路连接材料进行固化处理而得到的。
(导电粒子)
对本发明中作为电路连接构件10的成分的导电粒子12的构成进行详细说明。图2是显示构成本发明涉及的电路连接材料的导电粒子的各种形态的断面图。如图2(a)所示，导电粒子12由具有导电性的粒子(主体部分)和形成于该粒子表面上的多个突起部分14构成。此处，多个突起部分14由具有导电性的金属构成。如图2(a)所示，导电粒子12由核体21和形成于核体21表面上的金属层22构成。核体21由中心核部分21a和形成于中心核部分21a表面上的突起部分21b构成，金属层22的表面侧具有多个突起部分14。金属层22覆盖了核体21，并在与突起部分21b对应的位置突出，该突出的部分形成突起部分14。
作为核体21的材质，从实现高连接可靠性方面考虑，优选在电路电极32、42相互连接后能够充分追随电路电极32、42之间的间隔扩大的材质。如果核体21不能充分追随温度变化等带来的电路电极32、42之间的间隔扩大，则连接部分的电阻值有时会上升。从有效防止这种电阻值上升的方面考虑，以及从与金属所组成的核体相比，成本低，并且对热膨胀及压合粘接时的尺寸变化的弹性变形范围大的方面考虑，作为核体优选使用由有机高分子化合物组成的材料。
另外，对于导电粒子12，优选发生粒子直径的20％压缩变形时的压缩弹性模量为100～800kgf/mm2，更优选为400～700kgf/mm2。如果上述粒子直径的20％压缩变形时的压缩弹性模量不足100kgf/mm2，则导电粒子12的最外层不容易侵入电路电极，因此连接部分的电阻上升，因此是不好的。另一方面，压缩弹性模量超过800kgf/mm2时，对相对置的电路电极32、42进行加压时存在导电粒子12不能充分变形为扁平形状的倾向。因此，与电路电极32、42的接触面积不足，连接部分的电阻上升。此外，变形不充分的导电粒子12不能充分追随温度变化等带来的电路电极32、42之间的间隔扩大，连接后的电阻显著上升，因此是不可取的。
作为构成核体21的中心核部分21a的有机高分子化合物，例如可以列举丙烯酸树脂、苯乙烯树脂、苯并胍胺树脂、有机硅树脂、聚丁二烯树脂或它们的共聚物，也可以使用它们的交联体。还有，核体21的中心核部分21a的平均粒径可根据用途进行适当设计，但优选为1～10μm，更优选为2～8μm，进一步优选为3～5μm。如果平均粒径不足1μm，则容易发生粒子的二次凝集，容易导致相邻电路的绝缘性不足。另一方面，如果平均粒径超过10μm，则由于这种大尺寸，容易导致相邻电路的绝缘性不足。
作为构成核体21的突起部分21b的有机高分子化合物，例如可以列举丙烯酸树脂、苯乙烯树脂、苯并胍胺树脂、有机硅树脂、聚丁二烯树脂或它们的共聚物，也可以使用它们的交联体。构成突起部分21b的有机高分子化合物可以与构成中心核部分21a的有机高分子化合物相同，也可以不同。
核体21可以通过在中心核部分21a的表面上吸附多个具有比中心核部分21a更小的直径的突起部分21b而形成。作为在中心核部分21a的表面上吸附突起部分21b的方法，例如可以列举用硅烷、铝、钛等各种偶联剂及粘结剂的稀释溶液对两种粒子或一种粒子进行表面处理后，将两者混合进行附着的方法等。
作为金属层22的材料，例如可以列举Cu、Ni或Ni合金、Ag或Ag合金等，作为镍合金，例如可以列举Ni-B、Ni-W、Ni-W-Co、Ni-Fe及Ni-Cr等。由于较硬、容易侵入电路电极32、42中，因而特别优选镍或镍合金。金属层22可以通过使用无电解镀敷法对核体21镀敷这些金属来形成。无电解镀敷法大致分为间歇方式和连续滴落方式，使用任一方式均可形成金属层22。
优选金属层22的膜厚(镀膜厚)为65～125nm，更优选为75～100nm，进一步优选为80～90nm。通过使金属层22的膜厚处于这种范围，可以进一步改善电路电极32、42之间的连接电阻。如果金属层22的膜厚不足65nm，则由于膜薄，容易导致连接电阻变大，如果超过125nm，则镀敷时导电粒子12之间发生凝结，相邻电路电极32、42之间容易产生短路。此处，在本说明书中，导电粒子12的金属层22的厚度是指不包含突起部21b的金属层部分的厚度，可通过电子显微镜测定。
导电粒子12的突起部分14的高度H优选为65～1000nm，更优选为65～500nm，特别优选为100～500nm。
另外，相邻突起部分14之间的距离S优选为1000nm以下，更优选为500nm以下。另外，为了使粘结剂组合物不会进入导电粒子12和电路电极32、42之间，使导电粒子12和电路电极32、42充分接触，相邻的突起部分14之间的距离S最好为至少50nm以上。还有，导电粒子12的突起部分14的高度H及相邻突起部分14之间的距离S可以通过电子显微镜测定。
另外，如图2(b)所示，导电粒子12也可以仅由中心核部分21a构成核体21。换言之，在图2(a)所示的导电粒子12上，也可以不设置突起部分21b。该导电粒子12可以通过对核体21的表面进行金属镀敷，在核体21表面上形成金属层22来得到。
此处，对用于形成突起部分14的方法进行说明。突起部分14可以通过在镀敷金属的镀敷反应过程中，改变镀敷条件使金属层22的厚度发生变化来形成全属层22。镀敷条件的改变可以通过例如在起初使用的镀敷液中追加浓度更高的镀敷液，从而使镀敷液达到不均匀来进行。另外，也可以通过调节镀敷液的pH值，例如使镀镍液的pH值为6来获得瘤状的金属层，即具有突起部14的金属层22(望月等，表面技术，Vol.48，No.4，429～432页，1997)。另外，作为赋予镀浴以稳定性的配位剂，使用甘氨酸时，可以形成平滑的金属层(皮膜)，与此相对，使用酒石酸或DL-苹果酸时，可以获得瘤状的皮膜，即具有突起部分14的金属层22(荻原等，非晶质镀敷(非晶質めつき)，Vol.36，第35～37页，1994；获原等，电路安装学会志(回路実装学会誌)，Vol.10，No.3，148～152页，1995)。
另外，优选导电粒子12中从核体21上完全剥离金属层22的粒子的混入率为在25万个粒子中不足5％，更优选为不足1％，进一步优选为不足0.1％。通过使从核体21上完全剥离金属层22的粒子的混入率处于这种范围，可以切实达到电路电极32、42之间的导通。如果从核体21上完全剥离金属层22的粒子的混入率为5％以上，则与导电无关的粒子存在于电极上，从而容易导致连接电阻变大。
本发明中的导电粒子12可能会暴露部分核体21。从连接可靠性方面考虑，优选金属层22的被覆率为70％以上，更优选为80～100％。通过使金属层22的被覆率达到这种范围，可以进一步改善电路电极32、42之间的连接电阻。如果金属层22的被覆率不足70％，则导电粒子12表面的导通面积小，因此容易导致连接电阻变大。
金属层22可以是由单一的金属层构成，也可以由多个金属层构成。
(粘结剂组合物)
以下，对上述电路连接材料10中的粘结剂成分(粘结剂组合物)11进行详细说明。电路连接材料中含有的粘结剂成分(粘结剂组合物)11具有粘接性，通过针对第一及第二电路构件30、40的固化处理进行固化。
作为粘结剂组合物，优选含有膜形成材料、环氧树脂及潜伏性固化剂。由此，可以更切实地实现由本发明带来的上述效果。
作为本发明中使用的膜形成材料，可以列举苯氧基树脂、聚乙烯醇缩甲醛树脂、聚苯乙烯树脂、聚乙烯醇缩丁醛树脂、聚酯树脂、聚酰胺树脂、二甲苯树脂、聚氨酯树脂等。膜形成材料是指在使液态物质固形化，使构成组合物形成薄膜形状的情况下，该膜的操作容易，并赋予不容易开裂、破损、发粘的机械特性等的材料，在通常状态(常温常压)下可进行作为膜的操作的材料。
在膜形成材料中特别优选苯氧基树脂，因为其粘接性、相溶性、耐热性、机械强度优良。苯氧基树脂是指使2官能酚类和表卤代醇反应至高分子量，或使2官能环氧树脂和2官能酚类加聚而得到的树脂。具体来说，可以通过使2官能酚类1摩尔和表卤代醇0.985～1.015摩尔，在碱金属氢氧化物存在下，在非反应性溶剂中以40～120℃的温度反应而获得。
另外，从树脂的机械特性或热特性的方面考虑，优选将2官能性环氧树脂与2官能性酚类的配合当量比设为环氧基/酚羟基＝1/0.9～1/1.1，在碱金属化合物、有机磷系化合物、环状胺系化合物等催化剂存在下，在沸点为120℃以上的酰胺系、醚系、酮系、内酯系、醇系等有机溶剂中按反应固体成分为50质量份以下的条件加热至50～200℃进行加聚而得到的树脂。
作为上述2官能环氧树脂，可以列举双酚A型环氧树脂、双酚F型环氧树脂、双酚AD型环氧树脂、双酚S型环氧树脂、联苯二缩水甘油醚、甲基取代联苯二缩水甘油醚等。2官能酚类为具有2个酚性羟基的物质。作为2官能酚类，例如可以列举氢醌类、双酚A、双酚F、双酚AD、双酚S、双酚芴、甲基取代双酚芴、二羟基联苯、甲基取代二羟基联苯等双酚类等。苯氧基树脂也可以用自由基聚合性官能团或其它反应性化合物进行改性(例如环氧化改性)。苯氧基树脂可单独使用，也可以混合使用两种以上。
作为本发明中使用的环氧树脂，可以单独使用或组合使用两种以上的以下物质：由表氯醇和双酚A、F或AD等衍生的双酚型环氧树脂、由表氯醇和苯酚酚醛清漆或甲酚酚醛清漆衍生的环氧酚醛清漆树脂或具有含萘环骨架的萘系环氧树脂、缩水甘油胺、缩水甘油醚、联苯、脂环式等一个分子内具有两个以上缩水甘油基的各种环氧化合物等。对于这些环氧树脂而言，为了防止电子迁移，优选使用离子杂质(Na+、Cl-等)，以及水解性氯等减少至300ppm以下的高纯度产品。
作为本发明中使用的潜伏性固化剂，只要是能够使环氧树脂固化的物质即可，作为这种潜伏性固化剂，可以列举阴离子聚合性的催化剂型固化剂、阳离子聚合性的催化剂型固化剂、加聚型固化剂等。这些固化剂可以单独使用或作为两种以上固化剂的混合物使用。从快速固化性优良、不需要考虑化学当量角度来看，在这些固化剂中优选阴离子或阳离子聚合性的催化剂型固化剂。
作为阴离子或阳离子聚合性的催化剂型固化剂，可以列举咪唑系、酰肼系、三氟化硼-胺络合物、锍盐、氨基酰亚胺、二氨基马来腈、三聚氰胺及其衍生物、多胺的盐、双氰胺等，也可以使用它们的改性物。作为加聚型固化剂，可以列举多胺类、聚硫醇、多酚、酸酐等。
作为阴离子聚合型的催化剂型固化剂配入叔胺类或咪唑类时，环氧树脂在160℃～200℃左右的中温下通过数十秒～数小时左右的加热发生固化。因此可使用时间(适用期)比较长，因而是优选的。
作为阳离子聚合型的催化剂型固化剂，优选例如通过能量射线照射而使环氧树脂固化的感光性鎓盐(主要使用芳香族重氮鎓盐、芳香族锍盐等)。另外，作为通过能量射线以外的加热方式活化而使环氧树脂固化的品种，有脂肪族锍盐等。这种固化剂具有快速固化的特性，因此是优选的。
这些潜伏性固化剂被聚氨酯系或聚酯系等高分子物质，或镍、铜等金属薄膜及硅酸钙等无机物包覆后形成的微胶囊能够延长可使用时间，因此是优选的。
本实施方式的电路连接材料10可以进一步使用以丙烯酸、丙烯酸酯、甲基丙烯酸酯或丙烯腈中的至少一种作为单体成分的聚合物或共聚物，当同时使用含有缩水甘油醚基的丙烯酸缩水甘油酯或甲基丙烯酸缩水甘油酯的共聚物系丙烯酸橡胶时，应力缓和性优良，因此是优选的。从提高粘结剂凝集力方面考虑，这些丙烯酸橡胶的分子量(通过尺寸排除凝胶色谱法并经过聚苯乙烯换算的重均分子量)优选为20万以上。
导电粒子12的配合量相对于粘结剂组合物100体积份优选为0.1～30体积份，其配合量可以根据用途而区别使用。从防止过剩的导电粒子12引起电路电极32、42之间的短路等方面考虑，更优选导电粒子12的配合量为0.1～10体积份。
本实施方式的电路连接材料10还可以含有橡胶微粒、填充剂、软化剂、促进剂、防老化剂、阻燃剂、色素、触变剂、偶联剂、酚醛树脂、三聚氰胺树脂、异氰酸酯类等。
上述橡胶微粒具有所配合导电粒子12的平均粒径的2倍以下的平均粒径，并且具有导电粒子12及粘结剂组合物在室温(25℃)下的储能模量的1/2的储能模量即可。特别地，橡胶微粒的材质为有机硅、丙烯酸乳液、SBR、NBR、聚丁二烯橡胶的微粒单独使用或混合使用两种以上是适宜的。三维交联的这些橡胶微粒的耐溶剂性优良，容易分散在粘结剂组合物中。
含有填充剂时，可以提高连接可靠性等，因此是优选的。只要填充剂的最大粒径小于导电粒子12的粒径即可使用，大于导电粒子12的粒径时，恐怕会阻碍导电粒子的扁平化。填充剂的配合量优选在5～60体积份(相对于粘结剂组合物的树脂成分100体积份)的范围内。如果超过60体积份，则提高可靠性的效果可能已饱和，如果不足5体积份，则添加效果小。
作为偶联剂，从提高粘接性方面考虑，优选含有酮亚胺、乙烯基、丙烯酰基、氨基、环氧基及异氰酸酯基的物质。具体来说，作为含有氨基的硅烷偶联剂，可以列举N-β(氨乙基)γ-氨基丙基三甲氧基硅烷、N-β(氨乙基)γ-氨基丙基甲基二甲氧基硅烷、γ-氨基丙基三乙氧基硅烷、N-苯基-γ-氨基丙基三甲氧基硅烷等。作为具有酮亚胺的硅烷偶联剂，可以列举使丙酮、甲乙酮、甲基异丁基酮等酮化合物与上述含有氨基的偶烷偶联剂进行反应而得到的物质。
还有，膜状电路连接材料可通过使用涂布装置(未图示)在支持体(聚对苯二甲酸乙二醇酯(PET)膜等)上涂布上述电路连接材料，并进行规定时间的热风干燥来制作。
[电路构件的连接结构的制造方法]
以下，对上述电路构件的连接结构1的制造方法进行说明。
首先，准备上述第一电路构件30、第二电路构件40和电路连接材料。作为电路连接材料，准备例如成形为膜状的电路连接材料(以下称为膜状电路连接材料)。膜状电路连接材料含有通过对第一电路构件30及第二电路构件40进行的固化处理而固化的粘结剂组合物和导电粒子12。膜状电路连接材料的厚度优选为5～50μm。如果膜状电路连接材料的厚度不足5μm，则容易导致第一及第二电极32、42之间的膜状电路连接材料填充不足。另一方面，如果厚度超过50μm，则存在难以确保第一及第二电极32、42之间的导通的倾向。
接着，在第一电路构件30上装载膜状电路连接材料。然后，按照使第一电路电极32和第二电路电极42达到相对配置的方式将第二电路构件40装载到膜状电路连接材料上。由此，使得膜状电路连接材料介于第一电路构件30和第二电路构件40之间成为可能。此时，膜状电路连接材料为膜状，容易操作。因此，利用该膜状电路连接材料，在连接第一电路构件30和第二电路构件40时可以容易地介于它们之间，可以使第一电路构件30和第二电路构件40的连接作业容易地进行。
接着，介着第一电路构件30和第二电路构件40对膜状电路连接材料进行加热并同时加压，施加固化处理，在第一及第二电路构件30、40之间形成电路连接材料10的固化物。固化处理可以通过一般的方法进行，根据粘结剂组合物适当地选择固化处理方法。此时，作为电路连接材料中的导电粒子12的最外层的Ni比以往的Au硬，因此突起部分14对第一或第二电路电极32、42的最外层形成了比以往的导电粒子更深的侵入，增加了导电粒子和电路电极的接触面积。另外，通过使第一或第二电路电极32、42的厚度达到50nm以上，防止了导电粒子的突起部分贯穿电路电极而使接触面积减少。然后通过对电路连接材料进行固化处理使粘结剂组合物固化，实现了对于第一电路构件30及第二电路构件40的高粘接强度，使导电粒子12和第一及第二电路电极32、42的紧密接触状态经过长时间后仍能得以保持。
因此，不论第一和/或第二电路电极32、42的表面上是否有凹凸，都可以充分降低相对置的第一及第二电路电极32、34间的连接电阻，可以实现第一电路电极32和第二电路电极42的良好电连接，同时还可以充分提高第一及第二电路电极32、42之间电气特性的长期可靠性。
还有，在上述实施方式中，是使用膜状电路连接材料制造电路构件的连接结构1，但是作为膜状电路连接材料的替代，也可以使用形成膜状之前的电路连接材料。在这种情况下，如果将电路连接材料溶解在溶剂中，将该溶液涂布在第一电路构件30或第二电路构件40的任一方上并且进行干燥，也可以介于第一及第二电路构件30、40之间。
以上，对本发明的优选实施方式进行了说明，但是本发明并不局限于上述实施方式。本发明可以在不脱离其主旨的范围内进行各种变形。
实施例
以下通过实施例对本发明的内容进行更具体的说明，但是本发明并不局限于这些实施例。
[导电粒子的制作]
(导电粒子No.1的制作)
改变四羟甲基甲烷四丙烯酸酯、二乙烯基苯及苯乙烯单体的混合比，使用过氧化苯甲酰作为聚合引发剂进行悬浮聚合，通过对得到的聚合物进行分级，得到具有约3μm粒径的核体，对获得的核体表面进行无电解镀Ni处理时，利用镀敷液的加入量、处理温度及时间来改变镀敷厚度，从而在上述核体的表面上形成镀Ni的突起部分，得到包含突起部分在内的Ni目标膜厚为90nm的导电粒子No.1。
对于上述导电粒子No.1，用德国菲希尔仪器公司(株式会社フイツシヤ一ィンスツルメンツ)制造的H-100显微硬度计测定压缩弹性模量，结果是该粒子发生粒子直径20％的压缩变形时的压缩弹性模量为650kgf/mm2。而且，用电子显微镜(日立制作所制，S-800)观察上述导电粒子No.1，测定突起部分的高度和相邻突起部分的间距，结果是突起部分的高度为100nm，相邻突起部分的间距为500nm。
(导电粒子No.2的制作)
另外，在导电粒子No.1上进行20nm的置换镀Au，从而形成具有多个突起部分的Au层，得到导电粒子No.2。对于上述导电粒子No.2，用德国菲希尔仪器公司制造的H-100显微硬度计测定压缩弹性模量，结果是该粒子发生粒子直径20％的压缩变形时的压缩弹性模量为650kgf/mm2。而且，用电子显微镜(日立制作所制，S-800)观察上述导电粒子No.2，测定突起部分的高度和相邻突起部分的间距，结果是突起部分的高度为100nm，相邻突起部分的间距为500nm。
(导电粒子No.3的制作)
使用压缩弹性模量不同于导电粒子No.1的核体的具有约3μm粒径的核体，对表面进行无电解镀Ni时，利用镀敷液的加入量、处理温度及时间来改变镀敷厚度，从而在上述核体的表面上形成镀Ni的突起部分，得到包含突起部分在内的Ni目标膜厚为90nm的导电粒子No.3。对于上述导电粒子No.3，用德国菲希尔仪器公司制造的H-100显微硬度计测定压缩弹性模量，结果是该粒子发生粒子直径20％的压缩变形时的压缩弹性模量为400kgf/mm2。而且，用电子显微镜(日立制作所制，S-800)观察上述导电粒子No.3，测定突起部分的高度和相邻突起部分的间距，结果是突起部分的高度为100nm，相邻突起部分的间距为500nm。
(导电粒子No.4的制作)
使用压缩弹性模量不同于导电粒子No.1的核体的具有约3μm粒径的核体，对表面进行无电解镀Ni时，利用镀敷液的加入量、处理温度及时间改变镀敷厚度，从而在上述核体的表面上形成镀Ni的突起部分，得到包含突起部分在内的Ni目标膜厚为90nm的导电粒子No.4。对于上述导电粒子No.4，用德国菲希尔仪器公司制造的H-100显微硬度计测定压缩弹性模量，结果是该粒子发生粒子直径20％的压缩变形时的压缩弹性模量为90kgf/mm2。而且，用电子显微镜(日立制作所制，S-800)观察上述导电粒子No.4，测定突起部分的高度和相邻突起部分的间距，结果是突起部分的高度为100nm，相邻突起部分的间距为500nm。
[电路连接材料的制作]
(电路连接材料A的制作)
由双酚A型环氧树脂和9，9’-二(4-羟基苯基)芴合成苯氧基树脂。将该树脂50g溶解在质量比为50∶50的甲苯(沸点110.6℃，SP值8.90)和醋酸乙酯(沸点77.1℃，SP值9.10)的混合溶剂中，形成固体成分为40质量％的溶液。
另外，准备以34∶49∶17的质量比含有微胶囊型潜伏性固化剂(微胶囊化的胺系固化剂)、双酚F型环氧树脂和萘型环氧树脂的、液状的含固化剂环氧树脂(环氧当量：202)。
按照使苯氧基树脂∶含固化剂环氧树脂以固体成分计为40∶60的方式混合上述材料，制作粘结剂组合物含有液。在得到的粘结剂组合物含有液中，再配入相对于树脂成分为5体积％的导电粒子No.1，使其分散，配制成电路连接材料含有液。
然后用涂布装置将该电路连接材料含有液涂布在单面经过表面处理的厚度为50μm的PET膜上，然后在70℃下热风干燥5分钟，从而在PET膜上得到厚度为20μm的膜状电路连接材料A。
(电路连接材料B制作)
将双酚A型环氧树脂50g溶解在质量比为50∶50的甲苯和醋酸乙酯的混合溶剂中，形成固体成分为40质量％的第一溶液，另一方面，将双酚A·F共聚合型苯氧基树脂50g溶解在质量比为50∶50的甲苯和醋酸乙酯的混合溶剂中，形成固体成分为45质量％的第二溶液。
混合上述第一及第二溶液，再向其混合液中配入液状环氧树脂(环氧当量：185)。按照使这些双酚A型苯氧基树脂∶双酚A·F共聚合型苯氧基树脂∶液状环氧树脂以固体成分质量比计为30∶30∶40的方式进行混合，制作粘结剂组合物含有液。在得到的粘结剂组合物含有液中，再配入相对于树脂成分为5体积％的导电粒子No.1，使其分散，再添加作为潜伏性固化剂的芳香族锍盐4.8g，配制成电路连接材料含有液。
然后用涂布装置将该电路连接材料含有液涂布在单面经过表面处理的厚度为50μm的PET膜上，然后在70℃下热风干燥5分钟，从而在PET膜上得到厚度为20μm的膜状电路连接材料B。
(电路连接材料C制作)
使用导电粒子No.2代替上述电路连接材料A中的导电粒子No.1，除此之外，通过与电路连接材料A相同的方法得到电路连接材料C。
(电路连接材料D制作)
使用导电粒子No.2代替上述电路连接材料B中的导电粒子No.1，除此之外，通过与电路连接材料B相同的方法得到电路连接材料D。
(电路连接材料E制作)
使用导电粒子No.3代替上述电路连接材料A中的导电粒子No.1，除此之外，通过与电路连接材料A相同的方法得到电路连接材料E。
(电路连接材料F制作)
使用导电粒子No.3代替上述电路连接材料B中的导电粒子No.1，除此之外，通过与电路连接材料B相同的方法得到电路连接材料F。
(电路连接材料G制作)
使用导电粒子No.4代替上述电路连接材料A中的导电粒子No.1，除此之外，通过与电路连接材料A相同的方法得到电路连接材料G。
(电路连接材料H制作)
使用导电粒子No.4代替上述电路连接材料B中的导电粒子No.1，除此之外，通过与电路连接材料B相同的方法得到电路连接材料H。
(实施例1)
作为第一电路构件，准备配置了凸决面积50μm×50μm、间距100μm、高度20μm的金凸块的IC芯片。接着，作为第二电路构件，准备表面上具备ITO电路电极(膜厚：200nm，表面电阻＜20Ω)、并且与IC芯片的凸块排列匹配着加工有电路电极的玻璃基板(厚度0.5mm)。然后，在第二电路构件上粘贴裁成了规定尺寸(2.5×30mm)的电路连接材料A，在70℃，1.0MPa下加热加压5秒钟进行临时连接。接着，剥离PET膜，然后按照用IC和第二电路构件夹持膜状电路连接材料A的方式配置IC，使IC的电路和第二电路构件的电路对好位置。接着，用石英玻璃和加压头夹持，按200℃、100MPa、10秒的条件从IC上方进行加热加压，使IC和第二电路构件进行正式连接。这样就得到了实施例1的电路构件的连接结构。
(实施例2)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备表面上具备ITO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜30Ω)、并且与IC芯片的凸块排列匹配着加工有电路电极的玻璃基板(厚度0.5mm)。然后，与实施例1的连接方法一样进行电路连接材料A的临时连接、正式连接，得到实施例2的电路构件的连接结构。
(实施例3)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备表面上具备IZO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜40Ω)、并且与IC芯片的凸块排列匹配着加工有电路电极的玻璃基板(厚度0.5mm)。然后，与实施例1的连接方法一样进行电路连接材料A的临时连接、正式连接，得到实施例3的电路构件的连接结构。
(实施例4)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例1相同的具有ITO电路电极(膜厚：200nm，表面电阻＜20Ω)的玻璃基板(厚度0.5mm)。然后，在第二电路构件上粘贴裁成了规定尺寸(2.5×30mm)的电路连接材料B，在70℃、1.0MPa下加热加压5秒钟进行临时连接。接着，剥离PET膜，然后按照用IC和第二电路构件夹持膜状电路连接材料B的方式配置IC，使IC的电路和第二电路构件的电路对好位置。接着，用石英玻璃和加压头夹持，按160℃、100MPa、10秒的条件从IC上方进行加热加压，使IC和第二电路构件进行正式连接。这样就得到了实施例4的电路构件的连接结构。
(实施例5)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例2相同的具备ITO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜30Ω)的玻璃基板(厚度0.5mm)。然后，与实施例4的连接方法一样进行电路连接材料B的临时连接、正式连接，得到实施例5的电路构件的连接结构。
(实施例6)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例3相同的具备IZO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜40Ω)的玻璃基板(厚度0.5mm)。然后，与实施例4的连接方法一样进行电路连接材料B的临时连接、正式连接，得到实施例6的电路构件的连接结构。
(实施例7)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例1相同的具有ITO电路电极(膜厚：200nm，表面电阻＜20Ω)的玻璃基板(厚度0.5mm)。然后，在第二电路构件上粘贴裁成了规定尺寸(2.5×30mm)的电路连接材料E，在70℃、1.0MPa下加热加压5秒钟进行临时连接。接着，剥离PET膜，然后按照用IC和第二电路构件夹持膜状电路连接材料E的方式配置IC，使IC的电路和第二电路构件的电路对好位置。接着，用石英玻璃和加压头夹持，按200℃、100MPa、10秒的条件从IC上方进行加热加压，使IC和第二电路构件进行正式连接。这样就得到了实施例7的电路构件的连接结构。
(实施例8)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例2相同的具备ITO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜30Ω)的玻璃基板(厚度0.5mm)。然后，与实施例7的连接方法一样进行电路连接材料E的临时连接、正式连接，得到实施例8的电路构件的连接结构。
(实施例9)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例3相同的具备IZO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜40Ω)的玻璃基板(厚度0.5mm)。然后，与实施例7的连接方法一样进行电路连接材料E的临时连接、正式连接，得到实施例9的电路构件的连接结构。
(实施例10)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例1相同的具有ITO电路电极(膜厚：200nm，表面电阻＜20Ω)的玻璃基板(厚度0.5mm)。然后，在第二电路构件上粘贴裁成了规定尺寸(2.5×30mm)的电路连接材料F，在70℃、1.0MPa下加热加压5秒钟进行临时连接。接着，剥离PET膜，然后按照用IC和第二电路构件夹持膜状电路连接材料F的方式配置IC，使IC的电路和第二电路构件的电路对好位置。接着，用石英玻璃和加压头夹持，按160℃、100MPa、10秒的条件从IC上方进行加热加压，使IC和第二电路构件进行正式连接。这样就得到了实施例10的电路构件的连接结构。
(实施例11)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例2相同的具备ITO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜30Ω)的玻璃基板(厚度0.5mm)。然后，与实施例10的连接方法一样进行电路连接材料F的临时连接、正式连接，得到实施例11的电路构件的连接结构。
(实施例12)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例3相同的具备IZO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜40Ω)的玻璃基板(厚度0.5mm)。然后，与实施例10的连接方法一样进行电路连接材料F的临时连接、正式连接，得到实施例12的电路构件的连接结构。
(比较例1)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例1相同的具有ITO电路电极(膜厚：200nm，表面电阻＜20Ω)的玻璃基板(厚度0.5mm)。然后，在第二电路构件上粘贴裁成了规定尺寸(2.5×30mm)的电路连接材料C，在70℃、1.0MPa下加热加压5秒钟进行临时连接。接着，剥离PET膜，然后按照用IC和第二电路构件夹持膜状电路连接材料C的方式配置IC，使IC的电路和第二电路构件的电路对好位置。接着，用石英玻璃和加压头夹持，按200℃、100MPa、10秒的条件从IC上方进行加热加压，使IC和第二电路构件进行正式连接。这样就得到了比较例1的电路构件的连接结构。
(比较例2)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例2相同的具备ITO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜30Ω)的玻璃基板(厚度0.5mm)。然后，与比较例1的连接方法一样进行电路连接材料C的临时连接、正式连接，得到比较例2的电路构件的连接结构。
(比较例3)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例3相同的具备IZO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜40Ω)的玻璃基板(厚度0.5mm)。然后，与比较例1的连接方法一样进行电路连接材料C的临时连接、正式连接，得到比较例3的电路构件的连接结构。
(比较例4)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例1相同的具有ITO电路电极(膜厚：200nm，表面电阻＜20Ω)的玻璃基板(厚度0.5mm)。然后，在第二电路构件上粘贴裁成了规定尺寸(2.5×30mm)的电路连接材料D，在70℃、1.0MPa下加热加压5秒钟进行临时连接。接着，剥离PET膜，然后按照用IC和第二电路构件夹持膜状电路连接材料D的方式配置IC，使IC的电路和第二电路构件的电路对好位置。接着，用石英玻璃和加压头夹持，按160℃、100MPa、10秒的条件从IC上方进行加热加压，使IC和第二电路构件进行正式连接。这样就得到了比较例4的电路构件的连接结构。
(比较例5)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例2相同的具备ITO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜30Ω)的玻璃基板(厚度0.5mm)。然后，与比较例4的连接方法一样进行电路连接材料D的临时连接、正式连接，得到比较例5的电路构件的连接结构。
(比较例6)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例3相同的具备IZO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜40Ω)的玻璃基板(厚度0.5mm)。然后，与比较例4的连接方法一样进行电路连接材料D的临时连接、正式连接，得到比较例6的电路构件的连接结构。
(比较例7)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例1相同的具有ITO电路电极(膜厚：200nm，表面电阻＜20Ω)的玻璃基板(厚度0.5mm)。然后，在第二电路构件上粘贴裁成了规定尺寸(2.5×30mm)的电路连接材料G，在70℃、1.0MPa下加热加压5秒钟进行临时连接。接着，剥离PET膜，然后按照用IC和第二电路构件夹持膜状电路连接材料G的方式配置IC，使IC的电路和第二电路构件的电路对好位置。接着，用石英玻璃和加压头夹持，按200℃、100MPa、10秒的条件从IC上方进行加热加压，使IC和第二电路构件进行正式连接。这样就得到了比较例7的电路构件的连接结构。
(比较例8)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例2相同的具备ITO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜30Ω)的玻璃基板(厚度0.5mm)。然后，与比较例7的连接方法一样进行电路连接材料G的临时连接、正式连接，得到比较例8的电路构件的连接结构。
(比较例9)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例3相同的具备IZO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜40Ω)的玻璃基板(厚度0.5mm)。然后，与比较例7的连接方法一样进行电路连接材料G的临时连接、正式连接，得到比较例9的电路构件的连接结构。
(比较例10)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例1相同的具有ITO电路电极(膜厚：200nm，表面电阻＜20Ω)的玻璃基板(厚度0.5mm)。然后，在第二电路构件上粘贴裁成了规定尺寸(2.5×30mm)的电路连接材料H，在70℃、1.0MPa下加热加压5秒钟进行临时连接。接着，剥离PET膜，然后按照用IC和第二电路构件夹持膜状电路连接材料H的方式配置IC，使IC的电路和第二电路构件的电路对好位置。接着，用石英玻璃和加压头夹持，按160℃、100MPa、10秒的条件从IC上方进行加热加压，使IC和第二电路构件进行正式连接。这样就得到了比较例10的电路构件的连接结构。
(比较例11)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例2相同的具备ITO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜30Ω)的玻璃基板(厚度0.5mm)。然后，与比较例10的连接方法一样进行电路连接材料H的临时连接、正式连接，得到比较例11的电路构件的连接结构。
(比较例12)
作为第一电路构件，准备与实施例1相同的IC。接着，作为第二电路构件，准备与实施例3相同的具备IZO(最外层，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)三层结构的电路电极(表面电阻＜40Ω)的玻璃基板(厚度0.5mm)。然后，与比较例10的连接方法一样进行电路连接材料H的临时连接、正式连接，得到比较例12的电路构件的连接结构。
[连接电阻的评价]
对于按上述方式得到的电路构件的连接结构，采用使回路中有1mA的恒定电流流过时提取两电极间的电位差的4端子测定法，使用万用表(日本爱德万公司(株式会社アドバンテスト)制，商品名“数字万用表(デジタルマルチメ一タ)”)测定IC的金凸块电极和第二电路构件的电路电极之间的连接电阻值。连接电阻值是在初期(连接后即刻)和在85℃、85％RH的恒温恒湿槽中保持500小时(高温高湿处理)并在室温(23℃)下放置30分钟后测定的。
对实施例1～12及比较例1～12的连接结构的连接电阻值的测定结果示于表1中。
表1
Figure G2008800220733D00251
※导电粒子
No.1：镀Ni粒子(有突起)/压缩弹性模量：650kgf/mm2
No.2：镀Au/Ni粒子(有突起)/压缩弹性模量：650kgf/mm2
No.3：镀Ni粒子(有突起)/压缩弹性模量：400kgf/mm2
No.4：镀Ni粒子(有突起)/压缩弹性模量：90kgf/mm2
※电路连接材料
A、C、E、G：正式连接条件：200℃、100MPa、10秒
B、D、F、H：正式连接条件：160℃、100MPa、10秒
如表1所示，将使用电路连接材料A、B、E、F连接电路电极整体或最外层由ITO或IZO构成的电路构件的实施例1～12的连接结构，与使用电路连接材料C、D、G、H连接相同的电路构件的比较例1～12的连接结构的初期或高温高湿处理后的连接电阻进行比较时，正如在比较例1、7和实施例1、7；比较例3、9和实施例3、9；比较例6、12和实施例6、12的比较中可看出的，得到了初期或高温高湿处理后的连接电阻值得到改善的结果。
由此可知，对于电路电极整体或最外层由ITO或IZO构成的电路电极，通过使用含有表面上具有突起部分且最外层为Ni，同时发生20％压缩时的压缩弹性模量为100～800kgf/mm2的导电粒子的电路连接材料进行连接，发现电连接特性得到了提高，特别是连接可靠性得到了改善。而且，上述连接电阻值的改善特别是对于表面由比ITO平滑的IZO构成的电路电极有显著的效果，认为可以提高平坦的电路电极的电连接特性。
按照本发明的连接结构，即使在高温高湿环境下或热冲击试验等情况下，也能够获得稳定的连接可靠性。

Claims (9)

1.电路连接材料，其含有粘结剂组合物和导电粒子，所述导电粒子是核体上具有1个或2个以上金属层并具有突起的导电粒子，至少在所述突起的表面上形成了所述金属层，该金属层由镍或镍合金构成，所述导电粒子发生20％压缩时的压缩弹性模量为100～800kgf/mm2。
2.权利要求1所述的电路连接材料，所述突起的高度为65～500nm。
3.权利要求1或2所述的电路连接材料，相邻的所述突起间的距离为1000nm以下。
4.权利要求1～3中任一项所述的电路连接材料，所述粘结剂组合物含有膜形成材料、环氧树脂及潜伏性固化剂。
5.电路构件的连接结构，其具备形成有电路电极且所述电路电极以相对方式进行配置的两个电路构件；以及介于所述电路构件之间，通过加热加压而使所述电路电极进行电连接的电路连接构件，
所述电路连接构件是权利要求1～4中任一项所述的电路连接材料。
6.权利要求5所述的电路构件的连接结构，所述两个电路构件中的至少一方为IC芯片。
7.权利要求5或6所述的电路构件的连接结构，所述两个电路构件的电路电极中的至少一方的表面由选自金、银、锡、铂族金属、铝、钛、钼、铬、铟-锡氧化物及铟-锌氧化物中的至少一种构成。
8.权利要求5～7中任一项所述的电路构件的连接结构，所述两个电路构件中的至少一方的表面被选自氮化硅、有机硅化合物及聚酰亚胺树脂中的至少一种物质进行了涂敷或附着处理。
9.电路构件的连接方法，使权利要求1～4中任一项所述的电路连接材料介于形成有电路电极且所述电路电极以相对方式进行配置的两个电路构件之间，通过加热加压而使所述电路电极进行电连接。
CN2008800220733A 2007-08-02 2008-07-31 电路连接材料、使用它的电路构件的连接结构及电路构件的连接方法 Active CN101689410B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP201800/2007 2007-08-02
JP2007201800 2007-08-02
PCT/JP2008/063781 WO2009017200A1 (ja) 2007-08-02 2008-07-31 回路接続材料、それを用いた回路部材の接続構造及び回路部材の接続方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201310425247.3A Division CN103484035A (zh) 2007-08-02 2008-07-31 电路连接材料、使用它的电路构件的连接结构及电路构件的连接方法

Publications (2)

Publication Number Publication Date
CN101689410A true CN101689410A (zh) 2010-03-31
CN101689410B CN101689410B (zh) 2013-10-16

Family

ID=40304428

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201310425247.3A Pending CN103484035A (zh) 2007-08-02 2008-07-31 电路连接材料、使用它的电路构件的连接结构及电路构件的连接方法
CN2008800220733A Active CN101689410B (zh) 2007-08-02 2008-07-31 电路连接材料、使用它的电路构件的连接结构及电路构件的连接方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201310425247.3A Pending CN103484035A (zh) 2007-08-02 2008-07-31 电路连接材料、使用它的电路构件的连接结构及电路构件的连接方法

Country Status (7)

Country Link
US (1) US20110267791A1 (zh)
EP (1) EP2178094A4 (zh)
JP (2) JP5316410B2 (zh)
KR (2) KR101302778B1 (zh)
CN (2) CN103484035A (zh)
TW (1) TWI396205B (zh)
WO (1) WO2009017200A1 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102399526A (zh) * 2010-07-20 2012-04-04 日立化成工业株式会社 粘接剂组合物、电路连接结构体、半导体装置及太阳能电池模件
CN108475556A (zh) * 2016-01-13 2018-08-31 株式会社山王 导电性微粒及导电性微粒的制造方法
CN108475583A (zh) * 2016-02-18 2018-08-31 积水化学工业株式会社 电组件及电组件的制造方法
CN111819638A (zh) * 2017-12-29 2020-10-23 国都化学株式会社 各向异性导电膜、包括其的显示器件和/或包括其的半导体器件
CN112740483A (zh) * 2018-10-03 2021-04-30 迪睿合株式会社 各向异性导电薄膜、连接结构体、连接结构体的制备方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4737177B2 (ja) * 2006-10-31 2011-07-27 日立化成工業株式会社 回路接続構造体
KR20100009540A (ko) * 2007-05-15 2010-01-27 히다치 가세고교 가부시끼가이샤 회로 접속 재료 및 회로 부재의 접속 구조
JP5375374B2 (ja) * 2009-07-02 2013-12-25 日立化成株式会社 回路接続材料及び回路接続構造体
WO2012137335A1 (ja) * 2011-04-07 2012-10-11 日立化成工業株式会社 回路接続材料及びその使用並びに接続構造体及びその製造方法
KR101151366B1 (ko) 2011-11-24 2012-06-08 한화케미칼 주식회사 도전성 입자 및 이의 제조방법
JP6044261B2 (ja) * 2012-10-22 2016-12-14 日立化成株式会社 異方導電性接着剤組成物
TWI495074B (zh) * 2012-11-30 2015-08-01 Ind Tech Res Inst 減能結構
US8815725B2 (en) 2013-01-18 2014-08-26 International Business Machines Corporation Low alpha particle emission electrically-conductive coating
JP6212366B2 (ja) * 2013-08-09 2017-10-11 積水化学工業株式会社 導電性粒子、導電材料及び接続構造体
KR101513642B1 (ko) * 2013-08-21 2015-04-20 엘지전자 주식회사 반도체 디바이스
US9490067B2 (en) 2013-11-08 2016-11-08 Cooper Technologies Company Joining dissimilar materials using an epoxy resin composition
KR101388604B1 (ko) * 2013-11-25 2014-04-23 덕산하이메탈(주) 금속입자, 이를 이용하는 도전입자 및 그 제조방법
JP2016009087A (ja) * 2014-06-24 2016-01-18 セイコーエプソン株式会社 表示装置および表示装置の製造方法
KR101586340B1 (ko) * 2014-12-26 2016-01-18 주식회사 아이에스시 전기적 검사 소켓 및 전기적 검사 소켓용 도전성 입자의 제조방법
US20160343684A1 (en) * 2015-05-18 2016-11-24 Innovative Micro Technology Thermocompression bonding with raised feature
DE102015016702A1 (de) * 2015-12-22 2017-06-22 Man Truck & Bus Ag Partikelteilchen aufweisendes Klebemittel zur Verbindung zweier Fahrzeugteile
JP7287275B2 (ja) * 2017-04-28 2023-06-06 株式会社レゾナック 接着剤組成物、及び接続体の製造方法
JP7160302B2 (ja) * 2018-01-31 2022-10-25 三国電子有限会社 接続構造体および接続構造体の作製方法
JP7185252B2 (ja) 2018-01-31 2022-12-07 三国電子有限会社 接続構造体の作製方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3379456B2 (ja) * 1998-12-25 2003-02-24 ソニーケミカル株式会社 異方導電性接着フィルム
JP3696429B2 (ja) * 1999-02-22 2005-09-21 日本化学工業株式会社 導電性無電解めっき粉体とその製造方法並びに該めっき粉体からなる導電性材料
JP2004155957A (ja) * 2002-11-07 2004-06-03 Three M Innovative Properties Co 異方導電性接着剤及びフィルム
JP2004164874A (ja) * 2002-11-08 2004-06-10 Osugi Kk 異方性導電接着剤用導電微粒子
CN101232128B (zh) * 2003-06-25 2010-12-08 日立化成工业株式会社 电路连接材料、电路构件的连接结构及其制造方法
JP4282417B2 (ja) * 2003-09-12 2009-06-24 ソニーケミカル＆インフォメーションデバイス株式会社 接続構造体
JP5247968B2 (ja) * 2003-12-02 2013-07-24 日立化成株式会社 回路接続材料、及びこれを用いた回路部材の接続構造
US20100025089A1 (en) * 2004-01-07 2010-02-04 Jun Taketatsu Circuit connection material, film-shaped circuit connection material using the same, circuit member connection structure, and manufacturing method thereof
CN1906705B (zh) * 2004-01-30 2010-04-21 积水化学工业株式会社 导电性微粒和各向异性导电材料
JP2005327509A (ja) * 2004-05-12 2005-11-24 Sekisui Chem Co Ltd 導電性微粒子及び異方性導電材料
JP2005327510A (ja) * 2004-05-12 2005-11-24 Sekisui Chem Co Ltd 導電性微粒子及び異方性導電材料
JP4662748B2 (ja) * 2004-10-04 2011-03-30 積水化学工業株式会社 導電性微粒子及び異方性導電材料
JP2006196411A (ja) * 2005-01-17 2006-07-27 Sekisui Chem Co Ltd 導電性微粒子及び異方性導電材料
CN101309993B (zh) * 2005-11-18 2012-06-27 日立化成工业株式会社 粘接剂组合物、电路连接材料、连接结构及电路部件连接方法
JP2006339160A (ja) * 2006-06-02 2006-12-14 Hitachi Chem Co Ltd 熱硬化性回路接続部材及びそれを用いた電極の接続構造、電極の接続方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102399526A (zh) * 2010-07-20 2012-04-04 日立化成工业株式会社 粘接剂组合物、电路连接结构体、半导体装置及太阳能电池模件
CN108475556A (zh) * 2016-01-13 2018-08-31 株式会社山王 导电性微粒及导电性微粒的制造方法
CN108475583A (zh) * 2016-02-18 2018-08-31 积水化学工业株式会社 电组件及电组件的制造方法
CN111819638A (zh) * 2017-12-29 2020-10-23 国都化学株式会社 各向异性导电膜、包括其的显示器件和/或包括其的半导体器件
CN111819638B (zh) * 2017-12-29 2022-06-21 国都化学株式会社 各向异性导电膜、包括其的显示器件和/或包括其的半导体器件
CN112740483A (zh) * 2018-10-03 2021-04-30 迪睿合株式会社 各向异性导电薄膜、连接结构体、连接结构体的制备方法
CN112740483B (zh) * 2018-10-03 2023-07-14 迪睿合株式会社 各向异性导电薄膜、连接结构体、连接结构体的制备方法

Also Published As

Publication number Publication date
WO2009017200A1 (ja) 2009-02-05
KR20100039894A (ko) 2010-04-16
EP2178094A4 (en) 2013-02-20
TW200929266A (en) 2009-07-01
KR20130088187A (ko) 2013-08-07
CN101689410B (zh) 2013-10-16
US20110267791A1 (en) 2011-11-03
TWI396205B (zh) 2013-05-11
KR101302778B1 (ko) 2013-09-02
JP5316410B2 (ja) 2013-10-16
JP2013209648A (ja) 2013-10-10
EP2178094A1 (en) 2010-04-21
CN103484035A (zh) 2014-01-01
JPWO2009017200A1 (ja) 2010-10-21

Similar Documents

Publication Publication Date Title
CN101689410B (zh) 电路连接材料、使用它的电路构件的连接结构及电路构件的连接方法
CN102063949A (zh) 电路连接材料的使用方法
KR20170036721A (ko) 도전 재료
JP6237855B2 (ja) 接着フィルム、回路部材の接続構造及び回路部材の接続方法
JP5029691B2 (ja) 回路接続用フィルム状接着剤
JP4265140B2 (ja) 異方導電性接着剤組成物、それを用いた回路端子の接続方法及び接続構造体
JP4888482B2 (ja) 異方導電性接着剤組成物、それを用いた回路端子の接続方法及び接続構造体
JP4687576B2 (ja) 回路接続用フィルム状接着剤
KR20200080337A (ko) 접속 재료
JP4055583B2 (ja) 回路接続用接着剤組成物、これを用いた回路端子の接続方法及び回路端子の接続構造
CN101529574A (zh) 电路连接结构体
JP2009161684A (ja) 回路接続用接着剤組成物、この接着剤組成物用いた回路部材の接続構造及び回路部材の接続方法
KR20110136731A (ko) 회로 접속용 접착 필름 및 그의 용도, 회로 접속 구조체 및 그의 제조 방법 및 회로 부재의 접속 방법
KR20110136734A (ko) 회로 접속용 접착 필름 및 그의 용도, 회로 접속 구조체 및 그의 제조 방법 및 회로 부재의 접속 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: Japan Tokyo Chiyoda Marunouchi yidingmu 9 No. 2

Applicant after: HITACHI CHEMICAL Co.,Ltd.

Address before: Tokyo, Japan

Applicant before: HITACHI CHEMICAL Co.,Ltd.

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: HITACHI CHEMICAL CO. LTD. TO: HITACHI CHEMICAL CO., LTD.

C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: Japan Tokyo Chiyoda Marunouchi yidingmu 9 No. 2

Patentee after: Lishennoco Co.,Ltd.

Address before: Japan Tokyo Chiyoda Marunouchi yidingmu 9 No. 2

Patentee before: HITACHI CHEMICAL Co.,Ltd.

CP01 Change in the name or title of a patent holder