TWI396205B - A circuit connecting material, a connecting structure using the circuit member, and a connection method of the circuit member - Google Patents

A circuit connecting material, a connecting structure using the circuit member, and a connection method of the circuit member Download PDF

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Publication number
TWI396205B
TWI396205B TW097129410A TW97129410A TWI396205B TW I396205 B TWI396205 B TW I396205B TW 097129410 A TW097129410 A TW 097129410A TW 97129410 A TW97129410 A TW 97129410A TW I396205 B TWI396205 B TW I396205B
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Taiwan
Prior art keywords
circuit
resin
connecting material
conductive particles
connection
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Application number
TW097129410A
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English (en)
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TW200929266A (en
Inventor
Katsuhiko Tomisaka
Kouji Kobayashi
Jun Taketatsu
Motohiro Arifuku
Kazuyoshi Kojima
Nichiomi Mochizuki
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Publication of TW200929266A publication Critical patent/TW200929266A/zh
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Publication of TWI396205B publication Critical patent/TWI396205B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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    • C08K7/16—Solid spheres
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Description

電路連接材料，使用其之電路構件之連接構造及電路構件之連接方法
本發明關於一種電路連接材料、使用其之電路構件之連接構造及電路構件之連接方法。
對液晶顯示用玻璃面板之液晶驅動用IC之實裝，係可使用將液晶驅動用IC直接以電路連接構件接合於玻璃面板上之CHIP-ON-GLASS實裝(以下稱為COG實裝)方法，或將液晶驅動用IC接合於具有金屬配線之可撓性帶，以玻璃面板與電路連接構件接合之CHIP-ON-FLEX實裝(以下稱為COF實裝)方法。由於該等微細電路所形成之電路構件彼此之連接藉由以往的焊料或橡膠連接器為對應困難，因此使用具有異方導電性之黏著劑組成物。
相對於此，伴隨著近年之液晶顯示器之高精細化，形成於電路構件的電路電極之高密度化正在進展當中。為此，有電路電極之更進一步微細化，亦即往多電極化或狹節距化等高精細化發展的傾向，高精細液晶模組中之高連接信賴性正被需求著。另一方面，電路電極之形成係使為電路本源的金屬形成於基板全面，於電路電極部塗佈阻劑，硬化，其以外的部分以酸或鹼進行蝕刻之步驟進行，而在上述經過高密度化的電路之情況，若形成於基板全面的金屬之凹凸大，則由於在凹部與凸部蝕刻時間為相異，因此無法進行精密的蝕刻，會有鄰接電路間之短路或斷線發生的問題。因此，期望在高密度電路之電極表面凹凸小，亦即電極表面為平坦，而使用以往之電路連接材料使如此之相對向的平坦的電路電極彼此連接的情況下，在電路連接材料中所含的導電粒子與平坦電極間，黏著劑樹脂殘留，會有無法確保在電路電極間充分之電連接及長期連接信賴性的問題。
再者，在液晶模組之製造步驟之中，有使用於表面容易形成氧化膜的金屬材料所構成之電路電極的情況，使用以往之電路連接材料時，導電粒子將氧化膜穿破，無法同時高水準地達成確保電連接，及確保長期連接信賴性之兩者。
於是，藉由在導電粒子表面設置複數之突起部，在電路連接時，藉由突起貫穿導電粒子與平坦電極間之黏著劑組成物，並接觸電路電極之方法(參照專利文獻1)，以及藉由在基材粒子表面上配置複數之金屬微粒子，以金屬鍍敷層覆蓋表面的至少一部份而成之導電粒子，即使是容易形成氧化膜的電路電極，亦能確保充分之電連接及長期連接信賴性的方法(參照專利文獻2)正在被規劃之中。
專利文獻1：特開2005-166438號公報
專利文獻2：國際公開第07/058159號小冊子
然而，即使使用上述方法，會依照電路電極之材質等 規格，而有無法確保初期之電連接，及無法確保良好的連接信賴性等，效果淺薄的情況。
本發明係鑑於如此之事情而完成者，目的為提供一種電路連接材料、使用其之電路構件之連接構造及電路構件之連接方法，可達成對向的電路電極彼此間之良好的電連接，同時可充分地提高電路電極間之電氣特性之長期信賴性。
本發明人等，為了解決上述課題專心檢討的結果，發現了上述課題發生原因在於導電粒子之最外層之材質。亦即，以往之電路連接材料所含的導電粒子之最外層為Au金屬膜，在電路連接時，即使藉由突起貫穿導電粒子與平坦電極間之黏著劑組成物，由於Au為比較軟的金屬，因此導電粒子之最外層相對於電路電極而變形，往電路電極的陷入變為困難。
於是本發明人等，為了解決上述課題進一步反覆努力研究之結果，發現藉由將導電粒子之最外層之材質變更為較Au硬的金屬，能提升連接信賴性，而使本發明達到完成。
本發明提供一種電路連接材料，係含有黏著劑組成物與導電粒子的電路連接材料，而導電粒子為在核體上具備1或2以上之金屬層而成並具有突起的導電粒子，至少突起之表面形成金屬層，該金屬層係由鎳或鎳合金所構成、 導電粒子之20%壓縮之壓縮彈性模數為100~800kgf/mm2 。
本發明之電路連接材料，被使用作為在製作電路構件之連接構造時，夾在2個電路構件(以下依照情況稱為「第1及第2電路構件」)之間，隔著電路構件被加熱加壓，而使電路電極間電連接的電路連接用之異方性導電性黏著劑。根據本發明之電路連接材料，與導電粒子之金屬層(最外層)為Au的情況相比，隔著導電粒子呈對向的電路電極彼此進一步良好地電連接，同時成為可進一步提高電路電極間之電氣特性之長期信賴性。亦即，即使黏著劑組成物之硬化物進入導電粒子與電路電極之間，因為在導電粒子表面側設置突起，藉由此導電粒子，加在黏著劑組成物之硬化物的壓力與沒有突起的導電粒子相比充分地變大，因此導電粒子之突起可容易地貫穿黏著劑組成物之硬化物，另外，藉由某程度陷入於電路電極，可使導電粒子與電路電極之接觸面積增加。再者，由於導電粒子之最外層的鎳(Ni)或鎳合金較Au硬，因此導電粒子之最外層對電路電極變成較為容易陷入，可使導電粒子與電路電極之接觸面積增加，藉此，可得到較為良好的電連接及電氣特性之長期信賴性。然後，藉由將導電粒子之20%壓縮之壓縮彈性模數定為100~800kgf/mm2 ，由於導電粒子之最外層對於電路電極容易陷入，因此可得到充分之電連接。此外還加上即使伴隨溫度之變動等，電路電極間之間隔變寬，仍可充分追隨導電粒子為電路電極間隔之擴大，並可確保 長期連接信賴性。
上述電路連接材料之中，導電粒子之突起之高度係以65~500nm為佳。另外，導電粒子之中，鄰接之突起間之距離為1000nm以下為佳。藉由使導電粒子之突起之高度及鄰接之突起間之距離在上述範圍內，導電粒子之突起可較為容易地貫穿黏著劑組成物之硬化物，可得到較為良好的電連接及電氣特性之長期信賴性。
黏著劑組成物係以含有薄膜形成材、環氧樹脂及潛在性硬化劑者為佳。據此，由本發明產生的上述效果可較為確實地發揮。
本發明提供一種電路構件之連接構造，係具備形成有電路電極，並使電路電極對向配置之2個電路構件，與夾在電路構件之間，進行加熱加壓，使該電路電極進行電連接之電路連接構件，電路連接構件係本發明之電路連接材料或其硬化物。此電路構件之連接構造係使用上述電路連接材料製作，因此可得到電路電極彼此間之良好的電連接。然後，係藉由隔著導電粒子呈對向的電路電極間之良好的電連接狀態，黏著劑組成物之硬化物經過長期間被保持，可成為充分地提高電氣特性之長期信賴性。
在上述之連接構造中，2個電路構件之至少一個為IC晶片亦可。在上述之連接構造中，2個電路構件之電路電極中之至少一個電路電極的表面為以選自金、銀、錫、鉑族之金屬、鋁、鈦、鉬、鉻、銦-錫氧化物(ITO)及銦-鋅氧化物(IZO)所成群之至少一種構成亦可。在上述之連接構造中，2個電路構件中之至少一個電路構件的表面為選自氮化矽、矽氧化合物及聚醯亞胺樹脂所成群之至少一種，進行有塗佈或附著處理亦可。
本發明提供一種電路構件之連接方法，係在形成有電路電極，且使電路電極對向配置之2個電路構件之間，夾設有本發明之電路連接材料，並藉由進行加熱加壓使電路電極進行電連接。依據如此之連接方法，由於使用本發明之電路連接材料，因此可確保良好的電連接及長期連接信賴性。
依據本發明可提供一種電路連接材料，欲連接的電路電極之表面為平坦之情況，及/或氧化膜容易形成的電路電極之情況下皆可達成對向的電路電極彼此間之良好的電連接，同時可充分地提高電路電極間之電氣特性之長期信賴性，及使用此材料之電路構件之連接構造，以及用於得到此之電路構件之連接方法。
以下，參照圖1～圖2同時對本發明之適合之實施形態詳細地作說明。另外，在圖式之說明中，於相同要素附上相同符號，而省略重複的說明。另外，圖示之方便上，圖式之尺寸比率未必與說明者一致。
圖1係表示使用本發明所關連之電路連接材料的電路構件之連接構造之一實施形態之概略剖面圖。本實施形態之電路構件之連接構造1係具備有相互對向的第1電路構件30及第2電路構件40，在第1電路構件30與第2電路構件40之間，設置有連接該等的電路連接材料10。
第1電路構件30係具備電路基板(第1電路基板)31、與電路基板31之主面31a上所形成之電路電極(第1電路電極)32。第2電路構件40，係具備電路基板41、與電路基板41之主面41a上所形成之電路電極(第2電路電極)42。
在電路基板31、41中，電路電極32、42之表面成為平坦。另外，此處所謂的「電路電極之表面平坦」係指電路電極之表面之凹凸充分地小，表面之凹凸係以20nm以下者為佳。
電路電極32、42之厚度為50nm以上為所希望者。在厚度為50nm未滿之情況下，在電路連接材料中之導電粒子12之表面側的突起部14會在壓著時貫穿電路電極32、42，而有與電路基板31、41接觸的可能性。此情況，電路電極32、42與導電粒子12之接觸面積減少，連接電阻有上昇的傾向。另外，電路電極32、42之厚度為製造成本等觀點看來，宜為1000nm以下，較佳為500nm以下。
就電路電極32、42之材質而言，可列舉Au、Ag、Sn、Pt族之金屬(例如釕、銠、鈀、鋨、銥、鉑)或ITO、IZO、Al、Cr、Mo、Ti等，而特別是電路電極32、42之材質為ITO或IZO之情況，電連接顯著成為良好，能發揮本發明之效果。另外，電路電極32、42全體以上述材質構成，或僅最外層為以上述材質構成皆可。
電路基板31、41之材質並未特別受到限制，而通常為有機絕緣性物質、玻璃或矽。
就第1電路構件30及第2電路構件40之具體例而言，可列舉半導體晶片(IC晶片)、電阻體晶片、電容器晶片等晶片零件、捲帶式封裝(TCP)、可撓性電路基板(FPC)、印刷電路板、玻璃基板等。
於該等電路構件30、40，通常設置多數電路電極(電路端子)32、42(依照情況亦可為單數)。就電路構件之連接構造1之形態而言，亦有IC晶片與晶片搭載基板之連接、電子電路相互之連接、COG實裝或COF實裝中之IC晶片與玻璃基板或與可撓性帶之連接等形態。特別是，以第1及第2電路構件30、40中至少一者為IC晶片者為佳。
另外，在上述實施形態中，於電路構件之連接構造1並未設置絕緣層，而在第1電路構件30中，於第1電路電極32與電路基板31之間亦可進一步形成絕緣層，在第2電路構件40中，於第2電路電極42與電路基板41之間亦可進一步形成絕緣層。
絕緣層只要以絕緣材料構成，則沒有特別受到限制，而通常由有機絕緣性物質、二氧化矽或氮化矽所構成。特別是，第1及第2電路構件30、40中至少一者之表面係以選自氮化矽、矽氧化合物、聚醯亞胺樹脂所成群之至少一種進行塗佈或附著處理者為佳。根據上述之電路連接材料10，對如此的電路構件30、40之接著強度成為特別良好。
電路連接材料10係含有具絕緣性的黏著劑成分(黏著劑組成物)11與導電粒子12。關於導電粒子12之詳細如後述，而如圖2(a)～(b)所表示般，在其表面側具有複數之突起部14。
於是，在此電路構件之連接構造1中，對向的第1電路電極32與第2電路電極42隔著導電粒子12而電連接。亦即，導電粒子12直接接觸著電路電極32、42之兩者。具體而言，導電粒子12之突起部14貫穿黏著劑成分(黏著劑組成物)11，而接觸第1電路電極32、第2電路電極42。
因此，電路電極32、42間之連接電阻充分地減低，電路電極32、42間之良好的電連接成為可能的。因此，可使電路電極32、42間之電流流動變圓滑，可充分地發揮電路所持有的機能。
導電粒子12之複數突起部14之內一部份之突起部14，係以分別於第1電路電極32或第2電路電極42產生凹陷T1、T2之方式陷入者為佳。此情況，導電粒子12之突起部14與電路電極32、42之接觸面積較為增加，可使連接電阻較為減低。
在電路構件之連接構造1中，第1電路電極32、第2電路電極42之至少一個之表面積為3000μm2 以下，且在第1電路電極32與第2電路電極42之間的平均導電粒子數係以15個以上者為佳。此處，平均導電粒子數係意指每1個電路電極的導電粒子數之平均值。此情況，可較充分地減低對向的電路電極32、42間之連接電阻。
以下，對於電路連接構件10作詳細地說明。電路連接構件10係成為薄膜狀，如以上所述，可藉由對含有於表面側具有突起部14之導電粒子12、與黏著劑組成物的電路連接材料進行硬化處理而得到。
(導電粒子)
對於本發明中之電路連接構件10之成分之導電粒子12之構成作詳細地說明。圖2係表示構成本發明所關連之電路連接材料的導電粒子之各種形態的剖面圖。如圖2(a)所表示般，導電粒子12係由具有導電性的粒子(本體部)，與形成於此粒子表面上的複數之突起部14所構成。此處，複數之突起部14係以具有導電性的金屬所構成。導電粒子12，係如圖2(a)所表示般，由核體21、與形成於核體21之表面上的金屬層22所構成。核體21係由核心部21a、與形成於核心部21a之表面上的突起部21b所構成，金屬層22係在其表面側具有複數之突起部14。金屬層22覆蓋著核體21，在對應於突起部21b的位置突出，其突出的部分成為突起部14。
就核體21的材質而言，達成高連接信賴性的觀點看來，以使用可充分追隨電路電極32、42彼此連接後之電路電極32、42間之間隔擴大的材質者為佳。伴隨溫度之變動等之電路電極32、42間之間隔擴大，若核體21無法充分地追隨，則連接部分之電阻值有上昇的情況。從有效率地防止如此電阻值之上昇的觀點看來，及與金屬所構成之核體相比成本低，加上熱膨脹或壓著接合時對尺寸變化彈性變形範圍廣的觀點看來，使用有機高分子化合物所構成之物作為核體21者為佳。
另外，導電粒子12係以粒子直徑之20%壓縮變形時之壓縮彈性模數為100～800kgf/mm2 者為佳，400～700kgf/mm2 為更佳。若上述粒子直徑之20%壓縮變形時之壓縮彈性模數未滿100kgf/mm2 ，則對電路電極導電粒子12之最外層陷入困難，因此連接部分之電阻上昇，故為不佳。另一方面，壓縮彈性模數超過800kgf/mm2 之情況下，將相對向的電路電極32、42加壓時，導電粒子12有並未充分變形成為扁平形狀的傾向。因此，與電路電極32、42的接觸面積變為不充分，連接部分之電阻上昇。此外還加上變形不充分的導電粒子12變為無法充分追隨伴隨溫度之變動等的電路電極32、42間之間隔擴大，連接後之電阻顯著上昇，因此為不佳。
就構成核體21之核心部21a的有機高分子化合物而言，可列舉例如丙烯酸樹脂、苯乙烯樹脂、苯胍胺樹脂、聚矽氧樹脂、聚丁二烯樹脂或該等共聚物，亦可使用使該等交聯者。另外，核體21之核心部21a之平均粒徑可因應用途等適宜設計，而以1～10μm者為佳，2～8μm者為較佳，3～5μm者為更佳。若平均粒徑未滿1μm則發生粒子之次級凝集，與鄰接電路的絕緣性有變為不充分的傾向。另一方面，若平均粒徑超過10μm，則起因於其大小，鄰接電路的絕緣性有變為不充分的傾向。
就構成核體21之突起部21b的有機高分子化合物而言，可列舉例如丙烯酸樹脂、苯乙烯樹脂、苯胍胺樹脂、聚矽氧樹脂、聚丁二烯樹脂或該等共聚物，亦可使用使該等交聯者。構成突起部21b的有機高分子化合物，係與構成核心部21a的有機高分子化合物相同或相異皆可。
核體21可藉由使核心部21a之表面吸附複數個具有小於核心部21a的直徑的突起部21b而形成。使突起部21b吸附於核心部21a之表面的方法而言，可列舉例如將兩者或一者之粒子以矽烷、鋁、鈦等各種偶合劑及黏著劑之稀釋溶液進行表面處理後，混合兩者使其附著的方法等。
就金屬層22的材料而言，可列舉例如Cu、Ni或Ni合金、Ag或Ag合金等，就鎳合金而言，可列舉例如Ni-B、Ni-W、Ni-W-Co、Ni-Fe及Ni-Cr等。由硬並且容易陷入電路電極32、42之觀點看來，特別以鎳或鎳合金者為佳。金屬層22可藉由，將該等金屬對核體21使用無電解鍍敷法進行鍍敷而形成。無電解鍍敷法大致分成批次方式與連續滴下方式，而使用任一方式皆可形成金屬層22。
金屬層22之膜厚(鍍敷膜厚)係以65～125nm者為佳，較佳為75～100nm，更佳為80～90nm。藉著將金屬層22之膜厚定為如此的範圍，可使電路電極32、42間之連接電阻成為更加良好者。金屬層22之膜厚未滿65nm，則由於膜厚薄，連接電阻有變大的傾向，超過125nm，則在鍍敷時導電粒子12間凝結發生，鄰接的電路電極32、42間有短路發生的傾向。此處，本說明書中之導電粒子12之金屬層22之厚度係指不含突起部21b的金屬層部分之厚度，可藉由電子顯微鏡測定。
導電粒子12之突起部14之高度H係以65～1000nm者為佳，65～500nm者為較佳，100～500nm者為特佳。
另外，鄰接之突起部14間之距離S係以1000mm以下為佳，500nm以下為較佳。另外，鄰接之突起部14間之距離S，為了使黏著劑組成物不進入導電粒子12與電路電極32、42之間，並充分地使導電粒子12與電路電極32、42接觸，希望為至少50mm以上。另外，導電粒子12之突起部14高度H及鄰接之突起部14間之距離S可藉由電子顯微鏡進行測定。
另外，導電粒子12係如圖2(b)所表示般，核體21僅由核心部21a構成亦可。換言之，在圖2之(a)所表示之導電粒子12中，不設置突起部21b亦可。此導電粒子12係可藉由對核體21之表面進行金屬鍍敷，使金屬層22形成於核體21之表面上而得到。
此處，對用於使突起部14形成的鍍敷方法作說明。突起部14，在金屬鍍敷時，藉由在鍍敷反應的途中變更鍍敷條件使金屬層22之厚度變化，可形成金屬層22。鍍敷條件之變更可藉由例如在最初使用的鍍液，再增加相較於此濃度較高的鍍液，使鍍液濃度成為不均勻進行。另外，藉著調節鍍液之pH，例如將鎳鍍液之pH定為6，可得到結節狀之金屬層，亦即具有突起部14的金屬層22(望月…等、表面技術、Vol.48，No.4、429～432頁、1997)。另外，相對於使用甘胺酸作為鍍浴而有助於安定性的錯化劑之情況，可得到平滑的金屬層(被膜)，使用酒石酸或DL-蘋果酸的情況，可得到結節狀之被膜，亦即具有突起部14的金屬層22(荻原…等、非晶質鍍敷Vol.36，第35～37頁、1994；荻原．．．等、電路實裝學會誌、Vol.10,No.3,148～152頁、1995)。
其他，在導電粒子12中，金屬層22由核體21完全剝離的粒子之混入率為25萬個粒子中未滿5%者為佳，較佳為未滿1%，更佳為未滿0.1%。藉由金屬層22由核體21完全剝離的粒子之混入率定為如此之範圍，可使電路電極32、42間之導通成為確實的。金屬層22由核體21完全剝離的粒子之混入率為5%以上之情況下，由於與導電無關的粒子存在於電極上，連接電阻有變大的傾向。
本發明中之導電粒子12，會有核體21部分露出的情況。由連接信賴性之觀點看來，金屬層22的被覆率為70%以上者為佳，較佳為80～100%。藉由將金屬層22的被覆率定在如此之範圍，可使電路電極32、42間之連接電阻更進一步成為良好的。金屬層22的被覆率未滿70%之情況下，由於導電粒子12表面之導通面積變小，因此連接電阻有變大的傾向。
金屬層22為由單一金屬之層所構成者，或由複數金屬之層所構成者皆可。
(黏著劑組成物)
接著，對於上述電路連接材料10中之黏著劑成分(黏著劑組成物)11作詳細地說明。電路連接材料10中所含之黏著劑成分(黏著劑組成物)11係具有接著性，藉由對第1及第2電路構件30、40進行硬化處理而硬化。
就黏著劑組成物而言，以含有薄膜形成材、環氧樹脂及潛在性硬化劑者為佳。據此，可較確實地發揮本發明產生之上述效果。
就於本發明使用之薄膜形成材而言，可列舉苯氧基樹脂、聚乙烯甲醛樹脂、聚苯乙烯樹脂、聚乙烯丁醛樹脂、聚酯樹脂、聚醯胺樹脂、二甲苯樹脂、聚胺甲酸乙酯樹脂等。薄膜形成材係指在使液狀物固形化，使構成組成物製成薄膜形狀的情況下，其薄膜之操作為容易，並賦予不容易裂開、破損、沾黏的機械特性等者，並且為可在通常狀態(常溫常壓)以薄膜的形式之操作者。
薄膜形成材之中，尤其從接著性、相溶性、耐熱性、機械強度優異之觀點看來，以苯氧基樹脂為特佳。苯氧基樹脂，係藉由使2官能酚類與表鹵醇反應至高分子量，或使2官能環氧樹脂與2官能酚類進行加成聚合所得到之樹脂。具體而言，可藉由使2官能酚類1莫耳與表鹵醇0.985～1.015莫耳，在鹼金屬氫氧化物之存在下，於非反應性溶劑中，40～120℃之溫度反應而得到。
另外，由樹脂之機械的特性或熱的特性之觀點看來，特別是將2官能性環氧樹脂與2官能性酚類之配合等量比定為環氧基/酚羥基=1/0.9～1/1.1，在鹼金屬化合物、有機磷系化合物、環狀胺系化合物等觸媒之存在下，在沸點為120℃以上之醯胺系、醚系、酮系、內酯系、醇系等有機溶劑中，反應固體成分為50質量份以下，於50～200℃加熱使其進行加成聚合反應所得到者為佳。
就上述2官能環氧樹脂而言，可列舉雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AD型環氧樹脂、雙酚S型環氧樹脂、聯苯二環氧丙基醚、甲基取代聯苯二環氧丙基醚等。2官能酚類係具有2個酚性羥基者。就2官能酚類而言，可列舉例如氫醌類、雙酚A、雙酚F、雙酚AD、雙酚S、雙酚茀、甲基取代雙酚茀、二羥基聯苯、甲基取代二羥基聯苯等雙酚類等。苯氧基樹脂亦可藉由自由基聚合性之官能基，或其他之反應性化合物變性(例如環氧變性)。苯氧基樹脂係單獨使用，或混合2種以上使用皆可。
就於本發明使用之環氧樹脂而言，可將環氧氯丙烷與雙酚A或由F、AD等衍生的雙酚型環氧樹脂、由環氧氯丙烷與苯酚酚醛或甲酚酚醛衍生的環氧酚醛樹脂或具有含萘環骨架之萘系環氧樹脂、縮水甘油胺、環氧丙基醚、聯苯、脂環式等在1分子內具有2個以上之縮水甘油基之各種環氧化合物等單獨或混合2種以上使用。該等環氧樹脂，係使用使雜質離子(Na+ 、Cl- 等)，或水解性氯等減低至300ppm以下的高純度品，由於防止電子遷移，因此為佳。
就本發明所使用之潛在性硬化劑而言，能使環氧樹脂硬化者即可，就如此之潛在性硬化劑而言，可列舉陰離子聚合性之觸媒型硬化劑、陽離子聚合性之觸媒型硬化劑、加成聚合型之硬化劑等。該等可單獨或以2種以上之混合物之形式使用。該等中，由在速硬化性方面優異，不需要化學當量方面的考慮之觀點看來，係以陰離子或陽離子聚合性之觸媒型硬化劑為佳。
就陰離子或陽離子聚合性之觸媒型硬化劑而言，可列舉咪唑系、醯肼系、三氟化硼-胺錯合物、鋶鹽、胺-醯亞胺、二胺基馬來腈、三聚氰胺及其衍生物、聚胺之鹽、二氰基二醯胺等，亦可使用該等轉化物。就加成聚合型之硬化劑而言，可列舉聚胺類、聚硫醇、多酚、酸酐等。
就陰離子聚合型之觸媒型硬化劑而言，在配合第3級胺類或咪唑類的情況下，環氧樹脂在160℃～200℃程度之中溫藉由數10秒～數小時程度之加熱而硬化。因此，使用期(pot life，有效時間)成為比較長，故為佳。
就陽離子聚合型之觸媒型硬化劑而言，以例如藉由能量線照射使環氧樹脂硬化的感光性鎓鹽(主要使用芳香族重氮鹽、芳香族鋶鹽等)為佳。另外，除了能量線照射以外，藉由加熱活性化使環氧樹脂硬化者而言，有脂肪族鋶鹽等。此種之硬化劑係具有所謂速硬化性的特徵，因此為佳。
將該等潛在性硬化劑以聚胺甲酸乙酯系或聚酯系等高分子物質，或鎳、銅等金屬薄膜及矽酸鈣等無機物被覆而微膠囊化之物，使用期可延長，故為佳。
本實施形態之電路連接材料10，進一步可使用以丙烯酸、丙烯酸酯、甲基丙烯酸酯或丙烯腈之內至少一個作為單體成分的聚合物或共聚物，在併用含有環氧丙基醚基的縮水甘油丙烯酸酯或含縮水甘油甲基丙烯酸酯的共聚物系丙烯酸橡膠的情況下，由於應力緩和優異，故為佳。該等丙烯酸橡膠之分子量(由尺寸排除層析而得之聚苯乙烯換算重量平均分子量)，從提高黏著劑之凝集力的觀點看來以20萬以上為佳。
導電粒子12的配合量係以相對於黏著劑組成物100體積份為0.1～30體積份者為佳，其配合量可依照用途分別使用。由防止過剩的導電粒子12造成電路電極32、42間之短路等的觀點看來，導電粒子12的配合量係以0.1～10體積份為較佳。
本實施形態之電路連接材料10，進一步亦可含有橡膠微粒子、充填劑、軟化劑、促進劑、老化防止劑、難燃化劑、色素、搖變劑、偶合劑、酚樹脂、三聚氰胺樹脂、異氰酸酯類等。
上述橡膠微粒子，只要具有所配合的導電粒子12之平均粒徑之2倍以下之平均粒徑，且具有導電粒子12及黏著劑組成物在室溫(25℃)之貯藏彈性率的1/2以下之貯藏彈性率者即可。特別是，橡膠微粒子之材質為矽酮、丙烯酸乳膠、SBR、NBR、聚丁二烯橡膠之微粒子，適合以單獨，或混合2種以上使用。3維交聯之該等橡膠微粒子耐溶劑性優異，容易分散在黏著劑組成物中。
含有充填劑之情況，可得到連接信賴性等提升，故為佳。充填劑之最大徑只要為未滿導電粒子12之粒徑即可使用，相較於導電粒子12之粒徑為更大的情況下，有阻礙導電粒子之扁平化之虞。充填劑之配合量為5~60體積份(相對於黏著劑組成物之樹脂成分100體積份)之範圍為佳。若超過60體積份則信賴性提升效果有飽和的情形，未滿5體積份則添加效果小。
就偶合劑而言，酮亞胺、乙烯基、丙烯酸基、胺基、環氧基及異氰酸酯基含有物，從接著性提升之觀點看來為適合。就具有胺基的矽烷偶合劑具體而言，可列舉N-β(胺基乙基)γ-胺基丙基三甲氧基矽烷、N-β(胺基乙基)γ-胺基丙基甲基二甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-苯基-γ-胺基丙基三甲氧基矽烷等。就具有酮亞胺的矽烷偶合劑而言，可列舉在上述之具有胺基的矽烷偶合劑，使丙酮、甲基乙基酮、甲基異丁基酮等酮化合物進行反應所得到者。
另外，薄膜狀之電路連接材料係可藉由使用塗佈裝置(未圖示)將上述電路連接材料塗佈在支持體(聚對苯二甲酸乙二酯(PET)薄膜等)上，既定時間熱風乾燥而製作。
[電路構件之連接構造之製造方法]
接著，對於上述電路構件之連接構造1之製造方法作說明。
首先，準備上述第1電路構件30與第2電路構件40、與電路連接材料。就電路連接材料而言，可準備例如成形為薄膜狀的電路連接材料(以下稱為薄膜狀電路連接材料。)。薄膜狀電路連接材料係含有藉由對第1電路構件30及第2電路構件40進行硬化處理而硬化的黏著劑組成物、與導電粒子12者。薄膜狀電路連接材料之厚度為5～50μm者為佳。若薄膜狀電路連接材料之厚度未滿5μm，則在第1及第2電路電極32、42之間薄膜狀電路連接材料有變成充填不足的傾向。另一方面，若厚度超過50μm，則第1及第2電路電極32、42間導通之確保有變為困難的傾向。
接著，使薄膜狀電路連接材料載置於第1電路構件30之上。然後，將第2電路構件40以第1電路電極32與第2電路電極42呈對向配置之方式載置於薄膜狀電路連接材料之上。藉此，成為可將薄膜狀電路連接材料夾在第1電路構件30與第2電路構件40之間。此時，薄膜狀電路連接材料為薄膜狀，操作容易。因此，只要藉由此薄膜狀電路連接材料，則連接第1電路構件30與第2電路構件40時，可容易地夾在該等之間，而可容易地進行第1電路構件30與第2電路構件40之連接作業。
接著，隔著第1電路構件30及第2電路構件40，對薄膜狀電路連接材料加熱，同時加壓，並施行硬化處理，在第1及第2電路構件30、40之間，形成電路連接材料10之硬化物。硬化處理可藉由一般的方法進行，其方法可依照黏著劑組成物適宜選擇。此時，由於電路連接材料中之導電粒子12最外層之Ni較以往的Au硬，因此對第1或第2電路電極32、42之最外層，相較於以往的導電粒子，突起部14成為更深地陷入，使導電粒子與電路電極之接觸面積增加。另外，藉由將第1或第2電路電極32、42之厚度定為50nm以上，防止導電粒子之突起部貫穿電路電極，而使接觸面積減少。然後，藉由使電路連接材料經過硬化處理而使黏著劑組成物硬化，可實現對第1電路構件30及第2電路構件40的高接著強度，可長期間保持導電粒子12與第1及第2電路電極32、42確實接觸的狀態。
因此，不拘在第1及/或第2電路電極32、42表面的凹凸之有無，可充分地減低對向的第1及第2電路電極32、42間之連接電阻，可達成第1電路電極32與第2電路電極42良好的電連接，同時可充分地提高第1及第2電路電極32、42間之電氣特性之長期信賴性。
另外，在上述實施形態中，使用薄膜狀電路連接材料製造電路構件之連接構造1，而亦可使用形成為薄膜狀的前述電路連接材料代替薄膜狀電路連接材料。此情況下，只要使電路連接材料溶解於溶劑，將此溶液，塗佈於第1電路構件30或第2電路構件40之任一者並使其乾燥，即可使其夾設在第1及第2電路構件30、40之間。
以上，對於本發明之適合之實施形態作說明，而本發明並非受到上述實施形態所限定者。本發明，係在不脫離其要旨之範圍各式各樣之變形為可能的。
[實施例]
以下，藉由實施例對本發明之內容進一步具體地說明，而本發明並非受到該等實施例所限制者。
[導電粒子之製作] (導電粒子No.1之製作)
藉著改變四羥甲基甲烷四丙烯酸酯、二乙烯基苯及苯乙烯單體之混合比，使用苯甲醯基過氧化物作為聚合起始劑進行懸浮聚合，將所得到之聚合物分級，可得到具有約3μm之粒徑的核體。對所得到之核體之表面進行無電解鍍Ni處理時，藉由依照鍍液之裝入量、處理溫度及時間變更鍍敷厚，可於上述核體之表面形成鍍Ni之突起部，得到亦含突起部的Ni目標膜厚為90nm之導電粒子No.1。
使用FISCHER INSTRUMENTS股份有限公司製H-100微小硬度計，對上述導電粒子No.1測定壓縮彈性模數之結果，該粒子之粒子直徑之20%壓縮變形時之壓縮彈性模數為650kgf/mm2 。進一步使用電子顯微鏡(日立製作所製，S-800)觀察上述導電粒子No.1，測量突起部之高度與鄰接之突起部間之距離之結果，突起部之高度為100nm、鄰接之突起部間之距離為500nm。
(導電粒子No.2之製作)
另外，藉由將Au以20nm取代鍍敷於導電粒子No.1上，形成具有複數之突起部的Au層，得到導電粒子No.2。使用FISCHER INSTRUMENTS股份有限公司製H-100微小硬度計，對上述導電粒子No.2測定壓縮彈性模數的結果，該粒子之粒子直徑之20%壓縮變形時之壓縮彈性模數為650kgf/mm2 。進一步，使用電子顯微鏡(日立製作所製S-800)觀察上述導電粒子No.2，測量突起部之高度與鄰接之突起部間之距離之結果，突起部之高度為100nm、鄰接之突起部間之距離為500nm。
(導電粒子No.3之製作)
使用與導電粒子No.1之核體在壓縮彈性模數上相異的具有約3μm之粒徑的核體，對表面進行無電解鍍Ni處理時，藉由依照鍍液之裝入量、處理溫度及時間變更鍍敷厚，於上述核體之表面形成鍍Ni之突起部，得到亦含突起部的Ni目標膜厚為90nm之導電粒子No.3。對上述導電粒子No.3使用FISCHER INSTRUMENTS股份有限公司製H-100微小硬度計測定壓縮彈性模數之結果，該粒子之粒子直徑之20%壓縮變形時之壓縮彈性模數為400kgf/mm2 。進一步使用電子顯微鏡(日立製作所製、S-800)觀察上述導電粒子No.3，測量突起部之高度與鄰接之突起部間之距離之結果，突起部之高度為100nm、鄰接之突起部間之距 離為500nm。
(導電粒子No.4之製作)
使用與導電粒子No.1之核體在壓縮彈性模數上相異的具有約3μm之粒徑的核體，對表面進行無電解鍍Ni處理時，藉由依照鍍液之裝入量、處理溫度及時間變更鍍敷厚，於上述核體之表面形成鍍Ni之突起部，得到亦含突起部的Ni目標膜厚為90nm之導電粒子No.4。使用FISCHER INSTRUMENTS股份有限公司製H-100微小硬度計，對上述導電粒子No.4測定壓縮彈性模數之結果，該粒子之粒子直徑之20%壓縮變形時之壓縮彈性模數為90kgf/mm2 。進一步，使用電子顯微鏡(日立製作所製，S-800)觀察上述導電粒子No.4，測量突起部之高度與鄰接之突起部間之距離之結果，突起部之高度為100nm、鄰接之突起部間之距離為500nm。
[電路連接材料之製作] (電路連接材料A之製作)
由雙酚A型環氧樹脂、與9,9'-雙(4-羥苯基)茀合成苯氧基樹脂。使此樹脂50g溶解於質量比50：50之甲苯(沸點110.6℃，SP值8.90)與醋酸乙酯(沸點77.1℃、SP值9.10)之混合溶劑，製成固體成分40質量%之溶液。
另外，準備了以質量比34：49：17含有微膠囊型潛在性硬化劑(經過微膠囊化的胺系硬化劑)、與雙酚F型環 氧樹脂、與萘型環氧樹脂的液狀含硬化劑的環氧樹脂(環氧當量：202)。
將上述材料以苯氧基樹脂：含硬化劑的環氧樹脂成為固體成分質量40：60之方式配合，製作黏著劑組成物含有液。於所得到之黏著劑組成物含有液進一步配合導電粒子No.1相對於樹脂成分5體積%，使其分散，調製含電路連接材料的液體。
然後，使用塗佈裝置將此含電路連接材料的液體塗佈於對單面進行表面處理的厚度50μm之PET薄膜之後，藉由70℃ 5分鐘之熱風乾燥，於PET薄膜上得到厚度為20μm之薄膜狀電路連接材料A。
(電路連接材料B之製作)
將雙酚A型苯氧基樹脂50g，溶解於質量比50：50之甲苯與醋酸乙酯的混合溶劑，製成固體成分40質量%之第1溶液，另一方面，將雙酚A‧F共聚合型苯氧基樹脂50g溶解於質量比50：50之甲苯與醋酸乙酯之混合溶劑，得到固體成分45質量%之第2溶液。
混合上述之第1及第2溶液，於其混合液進一步配合液狀環氧樹脂(環氧當量：185)。該等雙酚A型苯氧基樹脂：雙酚A‧F共聚合型苯氧基樹脂：液狀環氧成為固體成分質量比30：30：40之方式配合，製作含黏著劑組成物的液體。於所得到之黏著劑組成物含有液，配合導電粒子No.1相對於樹脂成分為5體積%，使其分散，進一步，添加芳香族鋶鹽4.8g作為潛在性硬化劑，調製含電路連接材料的液體。
然後，使用塗佈裝置將此含電路連接材料的液體塗佈於對單面進行表面處理的厚度50μm之PET薄膜之後，藉由70℃5分鐘之熱風乾燥，於PET薄膜上得到厚度為20μm之薄膜狀電路連接材料B。
(電路連接材料C之製作)
除了使用導電粒子No.2代替在上述電路連接材料A中之導電粒子No.1之外，藉由與電路連接材料A相同的方法得到電路連接材料C。
(電路連接材料D之製作)
除了使用導電粒子No.2代替在上述電路連接材料B中之導電粒子No.1之外，藉由與電路連接材料B相同的方法得到電路連接材料D。
(電路連接材料E之製作)
除了使用導電粒子No.3代替在上述電路連接材料A中之導電粒子No.1之外，藉由與電路連接材料A相同的方法得到電路連接材料E。
(電路連接材料F之製作)
除了使用導電粒子No.3代替在上述電路連接材料B中之導電粒子No.1之外，藉由與電路連接材料B相同的方法得到電路連接材料F。
(電路連接材料G之製作)
除了使用導電粒子No.4代替在上述電路連接材料A中之導電粒子No.1之外，藉由與電路連接材料A相同的方法得到電路連接材料G。
(電路連接材料H之製作)
除了使用導電粒子No.4代替在上述電路連接材料B中之導電粒子No.1之外，藉由與電路連接材料B相同的方法得到電路連接材料H。
(實施例1)
準備了配置有凸塊面積50μm×50μm、節距100μm、高度20μm之金凸塊的IC晶片作為第1電路構件。接著，準備了於表面上具備ITO電路電極(膜厚：200nm、表面電阻＜20Ω))，對準IC晶片之凸塊排列加工有電路電極的玻璃基板(厚度0.5mm)作為第2電路構件。然後，於第2電路構件上黏貼裁切成既定大小(2.5×30mm)的電路連接材料A，以70℃、1.0MPa進行加熱、加壓5秒鐘進行假連接。接下來，將PET薄膜剝離之後，以IC與第2電路構件夾住薄膜狀電路連接材料A之方式配置IC，進行IC電路與第2電路構件之電路定位。接下來，以石英玻璃與加壓頭夾住，以200℃、100MPa、10秒之條件由IC上方進行加熱、加壓而將IC與第2電路構件正式連接。如此一來，得到實施例1之電路構件之連接構造。
(實施例2)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了於表面上具備ITO(最外層，膜厚100nm)/M0(膜厚：50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻<30Ω))，對準IC晶片之凸塊排列加工有電路電極的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與實施例1之連接方法相同地進行電路連接材料A之假連接、正式連接，得到實施例2之電路構件之連接構造。
(實施例3)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了於表面上具備IZO(最外層，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻<40Ω))，對準IC晶片之凸塊排列加工有電路電極的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與實施例1之連接方法相同地進行電路連接材料A之假連接、正式連接，得到實施例3之電路構件之連接構造。
(實施例4)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例1相同的具備ITO電路電極(膜厚：200nm、表面電阻＜20Ω)的玻璃基板(厚度 0.5mm)作為第2電路構件。然後，於第2電路構件上黏貼裁切成既定大小(2.5×30mm)的電路連接材料B，以70℃，1.0MPa進行加熱、加壓5秒鐘假連接。接下來，將PET薄膜剝離之後，以IC與第2電路構件夾住薄膜狀電路連接材料B之方式配置IC，進行IC電路與第2電路構件之電路定位。接下來，以石英玻璃與加壓頭夾住，以160℃、100MPa、10秒之條件由IC上方進行加熱、加壓而將IC與第2電路構件正式連接。如此一來，得到實施例4之電路構件之連接構造。
(實施例5)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例2相同的具備ITO(最外層，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻＜30Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與實施例4之連接方法相同地進行電路連接材料B之假連接、正式連接，得到實施例5之電路構件之連接構造。
(實施例6)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例3相同的具備IZO(最外層，膜厚100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻＜40Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與實施例4之連接方法相同地進行電路連接材料B之假連接、正式連接，得到實施例6之電路構件之連接構造。
(實施例7)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例1相同的具備ITO電路電極(膜厚200nm、表面電阻＜20Ω)的玻璃基板(厚度0.5mm)作為第2電路構件。然後，於第2電路構件上黏貼裁切成既定大小(2.5×30mm)的電路連接材料E，以70℃、1.0MPa進行加熱、加壓5秒鐘假連接。接下來，將PET薄膜剝離之後，以IC與第2電路構件夾住薄膜狀電路連接材料E之方式配置IC，進行IC電路與第2電路構件之電路定位。接下來，以石英玻璃與加壓頭夾住，以200℃、100MPa、10秒之條件由IC上方進行加熱、加壓而將IC與第2電路構件正式連接。如此一來，得到實施例7之電路構件之連接構造。
(實施例8)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例2相同的具備ITO(最外層，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻＜30Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與實施例7之連接方法相同地進行電路連接材料E之假連接、正式連接，得到實施例8之電路構件之連接構造。
(實施例9)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例3相同的具備IZO(最外層，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻＜40Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與實施例7之連接方法相同地進行電路連接材料E之假連接、正式連接，得到實施例9之電路構件之連接構造。
(實施例10)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例1相同的具備ITO電路電極(膜厚：200nm、表面電阻＜20Ω)的玻璃基板(厚度0.5mm)作為第2電路構件。然後，於第2電路構件上黏貼裁切成既定大小(2.5×30mm)電路連接材料F，以70℃、1.0MPa進行加熱、加壓5秒鐘假連接。接下來，將PET薄膜剝離之後，以IC與第2電路構件夾住薄膜狀電路連接材料F之方式配置IC，進行IC電路與第2電路構件之電路定位。接下來，以石英玻璃與加壓頭夾住，以160℃、100MPa、10秒之條件由IC上方進行加熱、加壓而將IC與第2電路構件正式連接。如此一來，得到實施例10之電路構件之連接構造。
(實施例11)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例2相同的具備ITO(最外層，膜厚100nm)/Mo(膜厚：50nm)/Al(膜厚1154nm)之3層構成之電路電極(表面電阻＜30Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與實施例10之連接方法相同地進行電路連接材料F之假連接、正式連接，得到實施例11之電路構件之連接構造。
(實施例12)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例3相同的具備IZO(最外層，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻＜40Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與實施例10之連接方法相同地進行電路連接材料F之假連接、正式連接，得到實施例12之電路構件之連接構造。
(比較例1)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例1相同的具備ITO電路電極(膜厚200nm、表面電阻＜20Ω)的玻璃基板(厚度0.5mm)作為第2電路構件。然後，於第2電路構件上黏貼裁切成既定大小(2.5×30mm)的電路連接材料C，以70℃、1.0MPa進行加熱、加壓5秒鐘假連接。接下來，將PET薄膜剝離之後，以IC與第2電路構件夾住薄膜狀電路連接材料C之方式配置IC，進行IC電路與第2電路構件之電路定位。接下來，以石英玻璃與加壓頭夾住，以200℃、100Mpa、10秒之條件由IC上方進行加熱、加壓而將IC與第2電路構件正式連接。如此一來，得到比較例1之電路構件之連接構造。
(比較例2)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例2相同的具備ITO(最外層，膜厚100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻＜30Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與比較例1之連接方法相同地進行電路連接材料C之假連接、正式連接，得到比較例2之電路構件之連接構造。
(比較例3)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例3相同的具備IZO(最外層，膜厚：100nm)/Mo(膜厚50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻＜40Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與比較例1之連接方法相同地進行電路連接材料C之假連接、正式連接，得到比較例3之電路構件之連接構造。
(比較例4)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例1相同的具備ITO電路電極(膜厚：200nm、表面電阻＜20Ω)的玻璃基板(厚度0.5mm)作為第2電路構件。然後，於第2電路構件上黏貼裁切成既定大小(2.5×30mm)的電路連接材料D，以70℃、1.0MPa進行加熱、加壓5秒鐘假連接。接下來，將PET薄膜剝離之後，以IC與第2電路構件夾住薄膜狀電路連接材料D之方式配置IC，進行IC電路與第2電路構件之電路定位。接下來，以石英玻璃與加壓頭夾住，以160℃、100MPa、10秒之條件由IC上方進行加熱、加壓而將IC與第2電路構件正式連接。如此一來，得到比較例4之電路構件之連接構造。
(比較例5)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例2相同的具備ITO(最外層，膜厚：100nm)/Mo(膜厚54nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻＜30Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與比較例4之連接方法相同地進行電路連接材料D之假連接、正式連接，得到比較例5之電路構件之連接構造。
(比較例6)
準備了與實施例1相同的IC作為第1之電路構件。接著，準備了與實施例3相同的具備IZO(最外層，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻＜40Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與比較例4之連接方法相同地進行電路連接材料D之假連接、正式連接，得到比較例6之電路構件之連接構造。
(比較例7)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例1相同的具備ITO電路電極(膜厚：200nm、表面電阻＜20Ω)的玻璃基板(厚度0.5mm)作為第2電路構件。然後，於第2電路構件上黏貼裁切成既定大小(2.5×30mm)的電路連接材料G，以70℃、1.0MPa進行加熱、加壓5秒鐘進行假連接。接下來，將PET薄膜剝離之後，以IC與第2電路構件夾住薄膜狀電路連接材料G之方式配置IC，進行IC電路與第2電路構件之電路定位。接下來，以石英玻璃與加壓頭夾住，以200℃、100MPa、10秒之條件由IC上方進行加熱、加壓而將IC與第2電路構件正式連接，如此一來，得到比較例7之電路構件之連接構造。
(比較例8)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例2相同的具備ITO(最外層，膜厚；100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻＜30Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與比較例7之連接方法相同地進行電路連接材料G之假連接、正式連接，得到比較例8之電路構件之連接構造。
(比較例9)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例3相同的具備IZO(最外層，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻＜40Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與比較例7之連接方法相同地進行電路連接材料G之假連接、正式連接，得到比較例9之電路構件之連接構造。
(比較例10)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例1相同的具備ITO電路電極(膜厚：200nm，表面電阻＜20Ω)的玻璃基板(厚度0.5mm)作為第2電路構件。然後，於第2電路構件上黏貼裁切成既定大小(2.5×30mm)的電路連接材料H，以70℃、1.0MPa進行加熱、加壓5秒鐘進行假連接。接下來，將PET薄膜剝離之後，以IC與第2電路構件夾住薄膜狀電路連接材料H之方式配置IC，進行IC電路與第2電路構件之電路定位。接下來，以石英玻璃與加壓頭夾住，以160℃、100MPa、10秒之條件由IC上方進行加熱、加壓而將IC與第2電路構件正式連接。如此一來，得到比較例10之電路構件之連接構造。
(比較例11)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例2相同的具備ITO(最外層，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻＜30Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與比較例10之連接方法相同地進行電路連接材料H之假連接、正式連接，得到比較例11之電路構件之連接構造。
(比較例12)
準備了與實施例1相同的IC作為第1電路構件。接著，準備了與實施例3相同的具備IZO(最外層，膜厚：100nm)/Mo(膜厚：50nm)/Al(膜厚：150nm)之3層構成之電路電極(表面電阻＜40Ω))的玻璃基板(厚度0.5mm)作為第2電路構件。然後，與比較例10之連接方法相同地進行電路連接材料H之假連接、正式連接，得到比較例12之電路構件之連接構造。
[連接電阻之評估]
關於如上述之方式所得到之電路構件之連接構造，使用將1mA之定電流流過電路間時之兩電極間之電位差測出之4端子測定法，以萬用電表(ADVANTEST股份有限公司製，商品名「數位萬用電表」)對IC之金凸塊電極與第2電路構件之電路電極間之連接電阻值進行測定。連接電阻值，係於初期(連接後即刻)、與在85℃、85%RH之恆溫恆濕槽中保持500小時(高溫高濕處理)後，於室溫(23℃)放置30分鐘之後進行測定。
將實施例1～12及比較例1～12之連接構造中之連接電阻值的測定結果表示於表1。
如表1所示般，將電路電極之全體或最外層為以ITO或IZO構成的電路構件使用電路連接材料A、B、E、F連接之實施例1～12之連接構造、與將相同電路構件使用電路連接材料C、D、G、H連接之比較例1～12之連接構造之初期或高溫高濕處理後之連接電阻作比較的情況，比較例1、7與實施例1、7，比較例3、9與實施例3、9，比較例6、12與實施例6、12之比較之中所見到般，可得到初期或高溫高濕處理後之連接電阻值改善的結果。
由此可知，藉由對電路電極之全體或最外層為以ITO或IZO構成的電路電極，將含導電粒子(在表面具有突起部而最外層為Ni，同時20%壓縮時之壓縮彈性模數為100～800kgf/mm2 )的電路連接材料使用於連接，發現電連接特性之提升，尤其連接信賴性之改善。進一步認為，上述之連接電阻值之改善，特別是表面與ITO比較，以平滑的IZO構成的電路電極中效果顯著，平坦的電路電極中之電連接特性之提升為可能的。
根據本發明之連接構造，可得到即使在高溫高濕環境下或熱衝擊測試等亦為安定的連接信賴性。
1．．．電路構件之連接構造
10．．．電路連接材料
11．．．黏著劑成分(黏著劑組成物)
12．．．導電粒子
14．．．突起(突起部)
21．．．核體
21a．．．核心部
21b．．．突起部
22．．．金屬層
30．．．第1電路構件
31．．．電路基板(第1電路基板)
31a．．．主面
32．．．電路電極(第1電路電極)
40．．．第2電路構件
41．．．電路基板(第2電路基板)
41a．．．主面
42．．．電路電極(第2電路電極)
T1．．．由導電粒子造成之第1電路電極之凹陷
T2．．．由導電粒子造成之第2電路電極之凹陷
H．．．導電粒子之突起部之高度
S．．．鄰接之突起部間之距離
圖1表示本發明所關連之使用電路連接材料之電路構件連接構造一實施形態之剖面圖。
圖2表示本發明所關連之構成電路連接材料之導電粒子各種形態之剖面圖。
1．．．電路構件之連接構造
10．．．電路連接材料
11．．．黏著劑成分(黏著劑組成物)
12．．．導電粒子
14．．．突起(突起部)
30．．．第1電路構件
31．．．電路基板(第1電路基板)
31a．．．主面
32．．．電路電極(第1電路電極)
40．．．第2電路構件
41．．．電路基板(第2電路基板)
41a．．．主面
42．．．電路電極(第2電路電極)
T1、T2．．．凹陷

Claims (8)

  1. 一種電路連接材料，其係含有黏著劑組成物與導電粒子的電路連接材料，其特徵係前述導電粒子為在核體上具備1層或2層以上之金屬層所形成並具有突起的導電粒子，至少在前述突起之表面形成前述金屬層，該金屬層的最外層係由鎳或鎳合金所構成，前述導電粒子之20%壓縮時的壓縮彈性模數為400~700kgf/mm2 。
  2. 如申請專利範圍第1項之電路連接材料，其中該突起之高度為65~500nm。
  3. 如申請專利範圍第1或2項之電路連接材料，其中鄰接之前述突起間之距離為1000nm以下。
  4. 如申請專利範圍第1~2項中任一項之電路連接材料，其中該黏著劑組成物含有薄膜形成材、環氧樹脂及潛在性硬化劑，並且該薄膜形成材含有選自苯氧基樹脂、聚乙烯甲醛樹脂、聚苯乙烯樹脂、聚乙烯丁醛樹脂、聚酯樹脂、聚醯胺樹脂、二甲苯樹脂、以及聚胺甲酸乙酯樹脂所成群之至少一種。
  5. 如申請專利範圍第3項之電路連接材料，其中該黏著劑組成物含有薄膜形成材、環氧樹脂及潛在性硬化劑，並且該薄膜形成材含有選自苯氧基樹脂、聚乙烯甲醛樹脂、聚苯乙烯樹脂、聚乙烯丁醛樹脂、聚酯樹脂、聚醯胺樹脂、二甲苯樹脂、以及聚胺甲酸乙酯樹脂所成群之至少一 種。
  6. 一種電路構件之連接構造，其特徵係具備：形成有電路電極，並使前述電路電極對向配置之2個電路構件，夾在前述電路構件之間，進行加熱加壓，使前述電路電極進行電連接的電路連接構件，前述電路連接構件為申請專利範圍第1~5項中任一項之電路連接材料。
  7. 如申請專利範圍第6項之電路構件之連接構造，其中該2個電路構件之至少一個為IC晶片。
  8. 一種電路構件之連接方法，其特徵係在形成有電路電極，且使前述電路電極對向配置之2個電路構件之間，夾設有申請專利範圍第1~5項中任一項之電路連接材料，並藉由進行加熱加壓，使前述電路電極進行電連接。
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Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4737177B2 (ja) * 2006-10-31 2011-07-27 日立化成工業株式会社 回路接続構造体
KR20100009540A (ko) * 2007-05-15 2010-01-27 히다치 가세고교 가부시끼가이샤 회로 접속 재료 및 회로 부재의 접속 구조
JP5375374B2 (ja) * 2009-07-02 2013-12-25 日立化成株式会社 回路接続材料及び回路接続構造体
JP5293779B2 (ja) * 2010-07-20 2013-09-18 日立化成株式会社 接着剤組成物、回路接続構造体、半導体装置及び太陽電池モジュール
WO2012137335A1 (ja) * 2011-04-07 2012-10-11 日立化成工業株式会社 回路接続材料及びその使用並びに接続構造体及びその製造方法
KR101151366B1 (ko) 2011-11-24 2012-06-08 한화케미칼 주식회사 도전성 입자 및 이의 제조방법
JP6044261B2 (ja) * 2012-10-22 2016-12-14 日立化成株式会社 異方導電性接着剤組成物
TWI495074B (zh) * 2012-11-30 2015-08-01 Ind Tech Res Inst 減能結構
US8815725B2 (en) 2013-01-18 2014-08-26 International Business Machines Corporation Low alpha particle emission electrically-conductive coating
JP6212366B2 (ja) * 2013-08-09 2017-10-11 積水化学工業株式会社 導電性粒子、導電材料及び接続構造体
KR101513642B1 (ko) * 2013-08-21 2015-04-20 엘지전자 주식회사 반도체 디바이스
US9490067B2 (en) * 2013-11-08 2016-11-08 Cooper Technologies Company Joining dissimilar materials using an epoxy resin composition
KR101388604B1 (ko) * 2013-11-25 2014-04-23 덕산하이메탈(주) 금속입자, 이를 이용하는 도전입자 및 그 제조방법
JP2016009087A (ja) * 2014-06-24 2016-01-18 セイコーエプソン株式会社 表示装置および表示装置の製造方法
KR101586340B1 (ko) * 2014-12-26 2016-01-18 주식회사 아이에스시 전기적 검사 소켓 및 전기적 검사 소켓용 도전성 입자의 제조방법
US20160343684A1 (en) * 2015-05-18 2016-11-24 Innovative Micro Technology Thermocompression bonding with raised feature
DE102015016702A1 (de) * 2015-12-22 2017-06-22 Man Truck & Bus Ag Partikelteilchen aufweisendes Klebemittel zur Verbindung zweier Fahrzeugteile
JP6186019B2 (ja) * 2016-01-13 2017-08-23 株式会社山王 導電性微粒子及び導電性微粒子の製造方法
WO2017142086A1 (ja) * 2016-02-18 2017-08-24 積水化学工業株式会社 電気モジュール及び電気モジュールの製造方法
KR102573777B1 (ko) * 2017-04-28 2023-08-31 가부시끼가이샤 레조낙 접착제 조성물 및 접속체의 제조 방법
KR102180143B1 (ko) * 2017-12-29 2020-11-17 국도화학 주식회사 이방 도전성 필름, 이를 포함하는 디스플레이 장치 및／또는 이를 포함하는 반도체 장치
JP7185252B2 (ja) 2018-01-31 2022-12-07 三国電子有限会社 接続構造体の作製方法
JP7160302B2 (ja) * 2018-01-31 2022-10-25 三国電子有限会社 接続構造体および接続構造体の作製方法
JP2020095941A (ja) * 2018-10-03 2020-06-18 デクセリアルズ株式会社 異方性導電フィルム、接続構造体、接続構造体の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200525005A (en) * 2004-01-07 2005-08-01 Hitachi Chemical Co Ltd Circuit connection material, film-shaped circuit connection material using the same, circuit member connection structure, and manufacturing method thereof
JP2005327509A (ja) * 2004-05-12 2005-11-24 Sekisui Chem Co Ltd 導電性微粒子及び異方性導電材料
US20070054114A1 (en) * 2003-09-12 2007-03-08 Hiroyuki Kumakura Multilayer anisotropic conductive adhesive and connection structure using the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3379456B2 (ja) * 1998-12-25 2003-02-24 ソニーケミカル株式会社 異方導電性接着フィルム
JP3696429B2 (ja) * 1999-02-22 2005-09-21 日本化学工業株式会社 導電性無電解めっき粉体とその製造方法並びに該めっき粉体からなる導電性材料
JP2004155957A (ja) * 2002-11-07 2004-06-03 Three M Innovative Properties Co 異方導電性接着剤及びフィルム
JP2004164874A (ja) * 2002-11-08 2004-06-10 Osugi Kk 異方性導電接着剤用導電微粒子
EP1628363B1 (en) * 2003-06-25 2009-12-16 Hitachi Chemical Company, Ltd. Circuit member connecting structure and method of producing the same
JP5247968B2 (ja) * 2003-12-02 2013-07-24 日立化成株式会社 回路接続材料、及びこれを用いた回路部材の接続構造
US7410698B2 (en) * 2004-01-30 2008-08-12 Sekisui Chemical Co., Ltd. Conductive particle with protrusions and anisotropic conductive material therefrom
JP2005327510A (ja) * 2004-05-12 2005-11-24 Sekisui Chem Co Ltd 導電性微粒子及び異方性導電材料
JP4662748B2 (ja) * 2004-10-04 2011-03-30 積水化学工業株式会社 導電性微粒子及び異方性導電材料
JP2006196411A (ja) * 2005-01-17 2006-07-27 Sekisui Chem Co Ltd 導電性微粒子及び異方性導電材料
CN101309993B (zh) * 2005-11-18 2012-06-27 日立化成工业株式会社 粘接剂组合物、电路连接材料、连接结构及电路部件连接方法
JP2006339160A (ja) * 2006-06-02 2006-12-14 Hitachi Chem Co Ltd 熱硬化性回路接続部材及びそれを用いた電極の接続構造、電極の接続方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070054114A1 (en) * 2003-09-12 2007-03-08 Hiroyuki Kumakura Multilayer anisotropic conductive adhesive and connection structure using the same
TW200525005A (en) * 2004-01-07 2005-08-01 Hitachi Chemical Co Ltd Circuit connection material, film-shaped circuit connection material using the same, circuit member connection structure, and manufacturing method thereof
JP2005327509A (ja) * 2004-05-12 2005-11-24 Sekisui Chem Co Ltd 導電性微粒子及び異方性導電材料

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