CN1313661A - 半导体激光器以及引线接合方法 - Google Patents
半导体激光器以及引线接合方法 Download PDFInfo
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- CN1313661A CN1313661A CN01116563A CN01116563A CN1313661A CN 1313661 A CN1313661 A CN 1313661A CN 01116563 A CN01116563 A CN 01116563A CN 01116563 A CN01116563 A CN 01116563A CN 1313661 A CN1313661 A CN 1313661A
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Abstract
本发明提供了一种半导体激光器,它能够用简单结构简化装配过程,使两个半导体激光元件和监控PD容易安装在小型封装上,还提供了半导体激光器的引线接合方法。提供了管座100,一子固定件160,以及两个半导体激光发射元件131和132。第一连接表面,即监控PD140的阳极183和大致垂直于第一连接表面的第二连接表面,即引销123的端面123a用引线接合在一起。
Description
本发明涉及一种包括两个半导体激光元件的半导体激光器以及用于此仪器的引线接合方法。
传统上,存在一种半导体激光器,其中有一个半导体激光元件和用于监控半导体激光元件输出的监控用光电二极管(此后称为监控PD),被布置在一金属管座上,然而,为了从记录介质例如CD(小型盘)和DVD(数字通用盘)中读出信息,需要用两个半导体激光元件发射出两种不同波长的激光的半导体激光器。
因此,可以考虑如图12所示的半导体激光器,在此布置了两个半导体激光元件和一种用于监控半导体激光元件输出的监控PD,图12表示了此半导体激光器移去盖子后的内部透视图,值得注意的是,示出此半导体激光器是为了帮助解释本发明而不是现有技术。
如图12所示,此半导体激光器组件包括一孔板(eyelet)201的金属管座200和热辐射基座202,它们一体形成。引销221到223被安装在管座200的孔板201中,引销224的一端作为公用电极与孔板201电气连接,引销221到224用低熔点的玻璃固定在孔板201中,并相对管座200绝缘,孔板201具有5.6毫米外径,引销221到224由外径0.4毫米的金属柱构成,这些金属柱以90度的相同间隔布置在直径为2毫米的圆内。
硅子固定件(sub-mount)(此后称为Si子固定件)260用导电糊(未示出)模接合(die-bonding)于与孔板201一体形成的热幅射基座202上。两个半导体激光元件231和232用Au_Sn合金制成的钎焊材料(图中未示出)模接合于Si子固定件260上,Si子固定件260的模接合表面用金属覆盖,提供了半导体激光元件231和232的公用电极,在Si子固定件260表面上的公共电极与热幅射基座202通过金属引线252和254分别连接,另一方面,半导体激光元件231和232的上部的电极分别通过金属引线251和253与引销221和222相连,监控PD240用导电糊(图中未示出)模接合于形成在管座200孔板201上的凹槽201b上,且监控PD240的上部电极与引销223的一端面223a通过金属引线255连接。
通过放射红色激光(波长为630nm到680nm)InGaAlP基的半导体激光元件231和放射红外线激光(波长760nm到850nm)AlGaAs基的半导体激光元件232的组合特别提供了两个半导体激光元件231和232。
要求用熔点足够高于80摄氏度的(例如Au_Sn合金)一钎焊材料将半导体激光元件231和232模接合在Si子固定件260上,80度是正常使用温度范围的上限,所以这样不会在工作时移动两个半导体激光元件231和232放射点的相对位置,如果两个半导体激光元件231和232与金属的热幅射基座202直接模接合在一起,那么存在的问题为:由于金属和半导体的线性热膨胀系数不同,对两个半导体激光元件231和232施加拉应力,从而就会破坏或逐渐破坏晶体,所以,模接合于Si子固定件260是必不可少的。
如图12所示,具有两个半导体激光元件的半导体激光器存在问题为:因为它的结构变得复杂,且模接合监控PD240和Si子固定件260的过程的增加提高了成本。
因此,可以考虑通过在Si子固定件的表面上形成监控PD并消除监控PD的模接合过程来简化制造过程。如果采用上面所提到的结构,那么监控PD的电极表面平行于两个半导体激光元件的电极表面以及形成在Si子固定件表面上的电极表面。用金属引线将半导体激光元件和监控PD的电极与引销连接时,不能轻易实现引线的接合,除非半导体激光元件和监控PD的电极表面与金属引线要接合的引销的表面相互平行,将在下面描述根据图12所示的结构的半导体激光器(假设监控PD是形成在Si子固定件的表面上)。
在此半导体激光器中,两个半导体激光元件231和232分别与在两边的引销221和222相连,因此,在图12中只有引销223位于上边且能够与形成在表面的监控PD的电极相连。在这种情况下,存在着这样的问题,由于引销223的顶端没有从孔板201的表面201中伸出,几乎没有表面平行于形成在Si子固定件260上的监控PD的电极。作为解决这个问题的方法,也可以考虑围绕在孔板201上的引销提供一凹槽以暴露引销223并进行与圆柱形引销223的多圆周表面模接合。然而,这关系到:该凹槽将穿过孔板201而使得内部无法用盖子(图中未示出)密封住,而且将导致半导体激光元件容易损坏的问题。
当将引销223的端面223a与形成在Si子固定件260上的监控PD的电极模接合时,引销223的端面223a和监控PD的电极表面相互垂直,并因此,用传统的引线接合方法是很难将这些表面连接起来,参考图13到19,将在下面解释此原因,在这些图中,示出了图12中的半导体激光器的引线接合过程。
首先,将参考图13到18,描述用于将图12所示的半导体激光器200的监控PD240的电极表面与引销223的端面223a连接的传统引线接合方法。
如图13所示,焊接头70有一安装在毛细管托72的顶端上的毛细管71和一金属丝夹73,且毛细管71和金属丝夹73以作为一个整体的方式移动,毛细管71有一约200微米直径的尖部,且毛细管71执行引导金属丝50保持直线的作用,直径为25微米的金丝作为金属引线50且球50a通过弧形放电或类似地在从毛细管71的顶部伸出的金属丝50的顶部形成。
接着,如图14所示,使焊接头70向下移动以使得球50a(如图13所示)与监控PD240的电极表面接触,且施加超声波振动使球50a与监控PD240(与球50相连的点作为第一连接点)的电极相连。
接着,当管座200适宜地绕垂直于毛细管71轴向的轴翻转以使引销223的连接表面223a垂直于毛细管71的轴向的同时,在如图15所示打开金属丝夹73时焊接头70向上移动拉长金属丝50。
接着,如图16所示,使焊接头70沿着平行于引销223的连接表面223a的平面移动,以使引销223的连接表面223a垂直位于毛细管71的下面。如果在此阶段,监控PD240的电极表面和引销223的连接表面223a相对被毛细管71导引的金属丝不在同一平面上,则适当移动管座以便引销223的连接表面223a位于毛细管71的轴上。
如图17所示,再向下移动焊接头70,使金属引线50与引销223的连接表面223a接触,并且施用超声波振动到金属引线,以使金属丝50与引销223(与引线接合的点作为第二连接点)的连接表面223a相连接。
最后,如图18所示,在此状态下通过关闭金属丝夹73向上移动焊接头70,切断金属丝50,随后,虽未示出,金属球通过弧光放电形成在金属丝50的顶端,且流程返回到第一步。
根据上面所提到的引线接合方法,不管圆柱200旋转所绕的中心轴在什么位置,都不会有特别的问题发生,是因为第一连接的连接表面和第二连接的连接表面形成了大约13度的夹角,然而,有一个问题是,如果管座200的旋转角进一步增加,则会由于毛细管71与管座200、半导体激光元件或类似物相接触而毁坏,正如图19所示,这导致的问题是,金属丝50在毛细管的顶部可能被严重弯曲,或者在第一个连接点的地方和毛细管71的顶部被歪曲或切断。
当Si子固定件260与在半导体激光器中的热辐射基座202模接合在一起时,如图12所示,理想的是通过用填充金属(例如用银填充物)的树脂而获得的导电糊来固定它们,这样就不会在将半导体激光元件231和232固定到Si260上的钎焊材料上产生热影响。然而,有一个问题是,当由于附在引线要接合的表面的导电糊而失去光滑时,金属丝的连接不能执行,因为导电糊有很强的流动性且容易在连接表面蔓延。
因此,本发明的目的是提供一半导体激光器,用简单的结构能简化制造过程,而且能在一紧凑的封装上轻易安装两个半导体激光元件和监控PD,并提供了一种用于上述半导体激光器的引线接合方法,此连接方法能很容易的执行可靠引线接合而不会毁坏管座,半导体激光元件等器件。
为了达到上述目的,本发明提供了一种半导体激光器,它包括:
一提供有多个引销的管座;
一子固定件,它模接合在管座的上面,且具有与监控光电二极管整体形成的表面;以及
两个半导体激光元件,它们模接合在子固定件的上面,而且发射能被监控光电二极管监控到的放射光,
具有分别通过金属丝与引销电连接的电极的半导体激光元件,以及通过金属丝与相应的引销电连接的监控光电二极管,其中,
两个半导体激光元件的至少一个的第一连接面和监控光电二极管大致垂直于要模接合于第一个连接面的引销的第二个连接面。
根据具有上述结构的半导体激光器,两个半导体激光元件的电极和监控PD的电极有相互平行的电极表面,而且,这三个电极表面中至少有一个作为第一连接表面,此第一连接表面与大致垂直于第一连接表面的引销的第二连接表面模接合,例如,在具有5.6mm直径,有限引销数量的小尺寸封装内,两个半导体激光元件被布置在管座上,使得两个半导体激光元件放射光的光轴相互平行,且垂直于管座表面(孔板表面),如果两个引销存在于布置方向的两侧,而另一个引销在垂直于布置方向的方向上,那么半导体激光元件的电极和监控PD的电极分配给三个引销,而且电极和引销用引线连接在一起(每个元件的另一电极与作为公用电极的管座连接),在上述的情况中,在两种半导体激光元件安装方向上两侧上的引销的圆周上的切面,在半导体激光元件的电极外的两电极表面和监控PD的电极变为相互平行,使引线接合变得更容易执行。然而,剩下元件的电极表面(第一连接表面),其也垂直与剩下的引销的外围的切平面,用金属丝与引销的端面(第二连接表面)连接,此引销大致与剩下元件的电极表面(第一连接表面)垂直,通过这样使大致垂直的第一和第二连接表面导线连接,能用简单的结构简化形成过程,而且,半导体激光元件能够很容易安装在有两个半导体激光元件和监控PD的小型封装的管座上。值得注意的是,两个半导体激光元件要与之模接合的子固定件由半导体如硅组成的子固定台提供,以便由于热膨胀产生的应力不会影响半导体激光元件。
在一个实施例的半导体激光器中,第一个连接表面的连接位置与第二个连接表面的连接位置位于与第一和第二连接表面垂直的同一平面上。
根据上面实施例的半导体激光器,第一连接表面的连接位置和第二连接表面的连接位置位于大致与第一和第二连接表面垂直的同一平面上,采用这种结构,在引线接合状态下,管座沿同一平面翻转。所以,金属丝不会扭曲,也不会给半导体激光元件和与引线连接的检测PD施加应力,所以可靠性提高了。
一实施例的半导体激光器还包括多个金属线,这些金属线形成在子固定件上,且半导体激光元件分别模接合于它们,其中,
与相应的半导体激光元件相连的金属丝间彼此绝缘。
根据上述实施例的半导体激光器,位于子固定件上且半导体激光元件与其模接合的金属线是独立地提供给相应的半导体激光元件的且相互绝缘的金属线,这种布置允许两个半导体激光元件在模接合侧有不同的电特性。例如,模接合一种半导体激光元件的p_极侧和模接合另一种半导体激光元件的n极侧是可以接受的,所以,使用半导体激光元件的环境有较大的宽限。
一实施例的半导体激光器还包括一些金属线,它们形成在子固定件上,且两个半导体激光元件模接合于它们,其中,
没有金属线从两个半导体激光元件中的至少一个的后端面伸向光电二极管检测仪。
根据上述实施例的半导体激光器,为了使来自半导体激光元件的最大量的发射光入射到与子固定件整体形成的监控PD上,至少一个金属线避免从半导体激光元件伸出到在半导体激光元件的放射端面附近的监控PD上,这种布置对于其的光放射点位于比子固定件的表面高几毫米的地方的半导体激光元件特别有效。
在一实施例的半导体激光器中,引销的一个端面是第二连接表面,而且,此引销的端面位于与管座表面相同的高度上或低于管座表面的高度上。
根据上述实施例的半导体激光器,由于引销的端面或第二连接表面位于与管座表面同高或低于管座表面高度的位置上,当进行导线连接到第一连接表面时,引线接合装置的毛细管能避免碰撞具有第二连接表面的引销。
在一实施例的半导体激光器中,管座提供台阶部分,该台阶部分具有与子固定件被连接的面平行但不等高的连接表面。
根据上述实施例的半导体激光器,管座提供了有连接表面的台阶部分,此连接表面与子固定件连接面平行且不等高,这种布置消除了引线接合不能操作的问题发生的可能性,这是由于在与子固定件连接的管座表面上的导电糊没有粘附在引线接合表面上。
本发明也提供了半导体激光器,包括:
一管座,它提供有多个引销;
一子固定件,模接合在于管座上;以及
一半导体激光元件,其模接合在子固定件上,该半导体激光元件具有通过金属丝与引销电连接的电极,其中,
管座提供了具有连接表面的台阶部分,此连接表面与子固定件接合表面平行且不等高。
根据上述实施例的半导体激光器,管座提供了具有连接表面的台阶部分,此连接表面与子固定件的接合表面平行且不等高,这种布置,减少了引线接合不能进行的问题发生的可能性,是由于在与子固定件连接的管座表面上的导电糊没有粘附在引线接合表面上。
本发明也为半导体激光器提供了引线接合方法,该半导体激光器包括一提供有多个引销的管座;形成在管座上且具有与监控光电二极管整体地形成的子固定件,以及两个模接合在子固定件上而且有被监控光电二极管监控到的放射光的半导体激光元件,这种方法包括:
第一步,保留管座使得用于引导金属丝的毛细管的轴垂直于两个半导体激光元件的第一连接表面和监控中的至少一个,将金属丝的一端与第一连接面连接;
第二步,在完成连接金属丝一端和第一连接表面以及金属丝的另一端与第二连接表面连接的操作后,绕垂直于金属丝的轴翻转管座,使得毛细管的轴垂直于引销的与第一连接表面大致垂直的第二连接表面。
根据上面半导体激光器引线接合方法,保持管座,使得引线接合装置的毛细管的轴垂直于两个半导体激光元件的第一连接表面和监控光电二极管中的至少一个,且金属丝的一端连接到第一连接面上,此后,绕垂直于金属丝的轴翻转管座使得毛细管的轴垂直于引销的与第一连接表面大致垂直的第二连接表面,且金属丝的另一端与第二连接表面连接。经过这些过程,金属丝能与大致相互垂直的第一连接表面和第二连接表面连接而不用使金属丝扭曲,所以,容放两个半导体激光元件和监控PD的小型封装的半导体激光器很容易进行引线接合,而不会破坏管座、半导体激光器等。
根据一实施例的半导体激光器引线接合方法,在第二步中的管座旋转轴平行于大致相互垂直的第一连接表面和第二连接表面的交线。
根据上述实施例的半导体激光器引线接合方法,在第二步中的管座翻转轴平行于大致相互垂直的第一连接表面和第二连接表面相交线。引线接合在晶体管座的翻转方向上观察,通过此操作,当观察金属丝怎样扭曲时,引线接合操作能被执行,所以,连接不会失败,引线接合能可靠执行。
根据一实施例的半导体激光器引线接合方法,第一个连接表面和第二个连接表面的连接位置位于与第一和第二连接表面大致垂直的同一平面上。
根据上述实施例的半导体激光器引线接合方法,第一个连接表面的连接位置和第二个连接表面的连接位置位于与第一和第二连接表面大致垂直的同一平面上,且在引线接合状态,管座沿同一平面翻转。所以金属丝不会扭曲,而且不会给半导体激光元件和与引线接合的监控PD施加应力。所以,可靠性提高了。
根据一实施例的半导体激光器引线接合方法,第二步中的从管座翻转所绕的轴到第一连接表面的距离与从管座所绕的轴到第二连接表面的距离设成相等。
根据上述实施例的半导体激光器引线接合方法,从管座翻转所绕的轴到第一连接表面的距离与从该轴到第二连接表面的距离设成相等,用这种布置,从毛细管的顶端到第一连接表面和第二连接面的距离在翻转前后变得相等。所以,引线接合方法很容易执行,而且连接的金属丝不容易切断。
根据一实施例的半导体激光器引线接合方法,在第一步后,通过在垂直于第一连接表面的方向上拉毛细管而从毛细管顶端抽出的金属丝的长度比从半导体激光器的前端面到第一连接表面的连接部分的长度要长。
根据上述实施例的半导体激光器引线接合方法,在进行第一接合面的连接后,当在垂直于第一连接表面的方向上拉毛细管时,拉出毛细管顶端的金属丝的长度比从半导体激光器的前端面到第一连接表面的连接位置的长度要长,用这种布置,当管座翻转时,毛细管能避免与半导体激光元件相撞。
从下面所给的具体描述和仅用图解方式给出的附图中,本发明能被更好地理解,而且这些并不作为本发明的限制,其中:
图1为根据本发明的实施例为具有两个半导体激光元件的半导体激光器的透视图;
图2表示上述半导体激光器主要部分的前视图;
图3表示上述半导体激光器主要部分的俯视图;
图4表示上述半导体激光器的90度引线的连接过程;
图5表示图4之后的连接过程;
图6表示图5之后的连接过程;
图7表示图6之后的连接过程;
图8表示图7之后的连接过程;
图9表示图8之后的连接过程;
图10表示图9之后的连接过程;
图11表示图10之后的连接过程;
图12表示具有两个半导体激光元件的半导体激光器的透视图;
图13表示上述半导体激光器的引线的连接过程;
图14表示图13之后的连接过程;
图15表示图14之后的连接过程;
图16表示图15之后的连接过程;
图17表示图16之后的连接过程;
图18表示图17之后的连接过程;
图19为一示意图,它示出了管座在接合过程中翻转90度角的地方。
下面依据图中所示的实施例,将具体描述本发明的半导体激光器和金属线接合方法。
图1表示根据本发明的实施例的半导体激光器移去盖子后的内部的透视图。
如图1所示,半导体激光器包含一具有整体形成的一孔板101和一热辐射基座102的金属管座100,引销(lead pin)121到123都被安装在管座100的孔板101中,以使引销121到123的末端穿透管座100的孔板101,且作为公用电极的引销124的一端与孔板100电连接,引销121到123用低融点的玻璃固定在孔板101上,且相对管座100绝缘,孔板101具有5.6毫米的外径,并且0.4mm直径的圆柱形的,金属制成的引销121到124为90°等间隔布置在孔板101上2mm直径的圆内。
Si子固定件160用为导电糊的银糊170(图2所示)模接合于与孔板101整体形成的热辐射基座102,监控PD140与子固定件160的表面整体地形成,此外,两个半导体激光元件131和132由金-锡合金制成的钎焊材料(没有显示)模接于Si子固定件160上。如图2所示,半导体激光元件131的上部的电极通过引线152与热辐射基座102台阶部分111的表面102b相连,且半导体激光元件132上部的电极通过引线153与引销122相连,另一方面,在Si子固定件160的表面上的金属线181(图3所示)通过金属丝151与引销121相连,且在硅子固定件160的表面上的金属线182(图3所示)通过引线154与热辐射基座102台阶部分111的表面102b相连。
值得注意的是,孔板101提供有一凹槽103,此槽位于一包含引销123外围的矩形区域中,所以引销123的端表面123a没有从孔板101的表面101a中伸出。
图2表示半导体激光器的主要部分的前视图,而图3表示图2所示的半导体激光器主要部分俯视图,为了使图形容易看清,在图2和图3中,孔板未示出。
如图2所示,两个半导体激光元件131和132用金-锡合金制成的钎焊材料(未示出)模接合于在Si子固定件160上形成的金属线181和182(如图3所示),这两个半导体激光元件131和132布置在Si子固定件160上,使得发射激光的光轴彼此平行且垂直于孔板101的表面,值得注意的是半导体激光元件131有一个似平行四边形的截面形状,且在分离基片(off-substrate)上以结晶形式生长。
热辐射基座102设置有台阶部分111,除此之外还有与Si子固定件160模接合的表面102a,台阶部分111位于热辐射基座102的两边,而且具有平行于表面102a的不等高的表面102b,借助于表面102a与102b具有不同的高度,涂在表面102a上面的银糊170,由于表面张力,不向表面102a边缘向外蔓延开,结果,即使在Si子固定件160与热辐射基座102模接合后,表面102b仍能保持光滑,且使金属丝152和154很轻易模接合。与孔板101(如图1所示)整体地形成的热辐射基座102与作为公用电极的引销124(如图1所示)电连接。
圆柱引销121到124都是由金属制成,它们的表面光滑加工,所以,与半导体激光元件132的上部电极平行的接触表面存在于引销122的外圆周表面,并因此,用传统的引线连接仪器可以与引线153相连。同样,形成在Si子固定件160上的金属线181(如图3所示)通过引线151与引销121相连。
如图3所示,监控PD140的阴极184与半导体激光元件132通过引线156相连,另一方面,监控PD140的阳极183通过引线155与引销123的端面123a相连,引销123的端面123a大致垂直于监控PD140的阳极183的表面。从而,用一根引线(90度金属丝)将大致相互垂直的连接表面连接在一起,排除了与Si子固定件独立地提供监控PD的需要,通过提供具有凹槽103(如图1所示)的管座100的孔板101,来省去暴露引销123的需要,换言之,移去凹槽103是有可能的,所以,半导体元件诸如半导体激光元件和监控PD,能够通过用盖保持半导体激光器内部气密而得到保护,将上面所提到的所有组件装入一个外部直径5.6毫米的紧凑封装中是有可能的。
图4到图11示出上述的半导体激光器的引线接合过程,而且参照图4到图11,将描述上述半导体激光器的引线接合方法,被用于半导体激光器连接方法的引线接合仪器除了管座的翻转角度是90度外,与图13所示的连接仪器具有相同的构造,且相同的元件用相同的附图标记,且对此不再描述。
首先,假定第一个连接表面是与监控PD140(图1)的阳极相连的阳极183(如图3所示)的表面,假定第二个连接表面是引销123的端面123a,且使得端面123a不至于伸出孔板101的表面101a,采用这种布置,以通过将毛细管71放置离孔板101的表面101a尽可能近,来防止毛细管71与在Si子固定件160上的半导体激光元件131和132相撞。
从毛细管71的中心轴到引销123的端面123a或到第二个连接表面的距离假定为h1,从而,管座100固定成,使得毛细管71的轴与监控PD140的第一连接表面(阳极183)垂直。
接着,焊接头70如图5所示,向下移动形成第一个连接点X。
接着,焊接头70如图6所示向上移动,在这个阶段,从毛细管71的顶端到第一个连接点X的距离假定为d2,这个距离d2优选地制得比从半导体激光元件131和132的前端面到第一个连接点X的距离d1长(d2>d1),采用这种布置,当管座100被翻转时,毛细管71能避免与半导体产生元件131和132相撞。
接着,如图7所示,晶体管座100绕着位于在第一个连接点X和毛细管71间延伸的金属引线50上的轴O翻转,轴O穿过距第一个连接点特定高度为h2的点且垂直于图7所在纸的平面。垂直于纸平面的方向与引线接合被观察的方向相同,即,管座100翻转所围绕的轴O平行于几乎相互垂直的第一个和第二连接表面(阳极183和端面123a)的相交线。
如图8所示,经过上面的操作,从毛细管71的顶端到第一个连接点X的距离和从毛细管71顶端到第二个连接点Y的距离在管座100翻转前后大体上没有改变,所以,当管座100在翻转时,金属引线50没有从毛细管71中拉出,而且对于金属丝50的断开没有利害关系。
更优选地是,在图7中的管座100翻转中心轴O的高度h2与图4中高度h1相等(h2=h1),那么,在管座100翻转前后,图6中所示的从毛细管71顶端到第一连接点X的距离变得与图8内所示的从毛细管71的顶端到第二连接点Y的距离相等(d2=d3),而且金属引线50的粘附进入了最佳状态。
接着,如图9所示,在管座100以90度角翻转后,焊接头70水平地沿着引销123的端面123a移动,以使得毛细管71的顶端位于穿过端面123a的第二个连接点Y的垂直线上。
然后,如图10所示,焊接头70再次向下移动,执行向作为第二连接表面的引销123的端面123a的连接,由于该引销123的端面123a最多比管座100的孔板101的表面101a低1毫米,不会导致毛细管71不能进入的这种问题。
最后,如图11所示,引线夹73合拢,且焊接头70在这种状态下上移,割断金属线50以完成引线接合。
与监控PD140整体形成的Si子固定件下面接着描述,众所周知,半导体激光元件不仅从前端表面而且后端表面放射激光,从半导体激光元件的后端面放射的激光部分地入射到与Si子固定件160整体形成的监控PD140上,且从监控PD140上的一监控输出作为半导体激光输出控制信号。
在此实施例的半导体激光器中,半导体激光器元件132具有AlGaAs系统,其中发射波长为770纳米到850纳米红外线激光,而且激光发射点大约位于距Si子固定件160表面50微米的地方,另一方面,半导体激光器元件131为InGaALP系统,其中发射波长为630到680纳米的红色激光,且光发射点大约位于距Si子固定件160的表面5微米的地方。
如果从半导体激光器元件131的光发射点到Si子固定件160的表面的高度有一个将近5微米的小值,那么,优选地是将监控PD140尽可能靠近半导体激光元件131的末端表面,是因为监控信号增大。然而,如果与半导体激光元件131装在一起的金属线181从半导体激光元件的末端表面甚至伸出一点点至监控PD140侧,则半导体激光器的发射光在金属线上反射,监控信号大小减小至几分之一,结果是,红外线激光的监控信号的大小以及红色激光监控信号的大小彼此显著不同,而且需要复杂的控制电路。所以,根据此实施例的半导体激光器,在Si子固定件160上的金属线181应制成具有在半导体激光元件131的后端面181a(如图3所示)附近不在监控PD140一侧上伸出的图形。
尽管形成在Si子固定件160上的金属线181和182,也起用于半导体激光元件131和132的热辐射板作用,由于半导体激光元件在后端面产生热少于在前端面产生的,即使热辐射恶化也没问题,尤其是,在其的热能辐射重要的高能量半导体激光元件中,前端表面的反射率适当设成低于后端表面反射率,并因此,后端面附近产生热不会变得同前端面一样大。
在本实施例的半导体激光器中,半导体激光元件131具有金属线181模接合于其的p_电极侧,而半导体激光元件132具有金属线182模接合于其的n_电极侧,采用这种布置是因为红色半导体激光元件131可靠性较低,而且要求将光放射点放在离金属直线尽可能近的地方,另一方面,当具有较高表面电阻的p_极侧被用作模接合表面时,红外线半导体激光元件132更优选,也存在的问题是为外延表面的p_极侧有显著的不平整而导致引线难于接合。金属线181和182与上述的半导体激光器电连接。因此,即采用上述的布置,两种半导体激光元件131和132不必顺序安装,而是依赖于图2所示的金属线151到154的连接方法而允许并行安装。
由上面显而易见,根据本发明的半导体激光器,监控PD的电极表面与引销的引线接合表面被形成为相互垂直的表面,结果,能够提供一种半导体激光器,其中将二个半导体激光元件和监控PD安装在一小型管座上(例如直径5.6毫米)。
第一个连接表面的连接位置和第二个连接表面的连接位置位于同一平面,此平面垂直于第一个连接面和第二个连接面,而且在引线接合状态下,晶体管座沿着此平面翻转,所以,金属线未被扭曲,而且没有对半导体激光元件和金属线所连接的监控PD产生应力,所以可靠性提高了。
通过在半导体激光元件所安装的Si子固定件上单独形成金属线且相互绝缘,两个半导体激光元件的模接合侧上的电特性彼此可能不同,换言之,也有可能模接合一个激光元件的p_极侧和另一个激光元件的n_电极侧。因此使用半导体激光元件的自由度提高了。
为了使来自半导体激光元件的大量激光入射到与Si子固定件的表面一体形成的监控PD上,在Si子固定件上的金属线被形成为使得半导体激光元件的光放射端面近端不会从半导体激光元件中突出,这种布置对于光发射点位于比硅子固定件表面高几毫米的位置的半导体激光元件是特别有效的。
作为第二个连接表面的引销的端面位于与管座的表面等高或较低的位置,所以当执行在第一个连接面上的引线接合时,引线接合装置的毛细管能够避免与有第二个连接面的引销相撞。
通过给管座提供台阶部分,其彼此平行并且在Si子固定件要被模接合的表面和要承受引线接合的管座表面间不等高,导电糊避免了与引线接合表面的粘附,这消除了金属线不粘附在连接面这个问题发生的可能性。
根据本发明的半导体激光器引线接合方法,通过连接金属线与第一连接点且随后绕穿过拉伸的金属线且垂直于金属线的轴翻转晶体管座,金属丝能与大致相互垂直的第一和第二连接面相连,而不会扭曲金属线。
通过在垂直于观察引线接合平面的方向上设置晶体管座翻转所绕的轴,在观察金属丝如何扭曲同时可以执行引线接合操作,所以连接不会造成失败。
通过大约在同一平面上设置第一个连接平面和第二个连接平面的连接位置,金属线没有扭曲,且没有对半导体激光元件和与金属线相连的监控PD产生应力,所以可靠性提高了。
此外,将从管座翻转所绕的轴到第一个连接表面的距离设成与管座翻转所绕的轴到第二连接表面的距离相同,采用这种布置,从引线接合装置的毛细管顶端到第一连接表面的距离和从毛细管顶端到第二个连接表面的距离在晶体管座翻转前后变为彼此相等,因此,引线接合很容易执行。而且被连接的金属线难以脱落。
通过设置从第一连接面的位置拉出的金属线的长度长于从半导体激光元件的前端面到第一模接合位置的长度,当为了执行金属丝与下一个第二连接表面相连而翻转晶体管座时,毛细管能避免与半导体激光元件相撞。
本发明如此描述,很明显,其可以以很多种方式变化。这些变化不被认为脱离本发明的精髓和范围,对一个本领域熟练技术的人来说,这些修改很明显地包含在权利要求书范围中。
Claims (12)
1.一种半导体激光器,包括:
管座,其提供有多个引销;
子固定件,其模接合在管座上,且具有与监控光电二极管整体形成的表面;以及
两个半导体激光元件,它们模接合在子固定件上,且所放射的光能被监控光电二极管监控到;
半导体激光元件具有通过金属丝与相应的引销电连接的电极,且监控光电二极管具有通过金属丝与相应引销电连接的电极,其特征在于,
两个半导体激光元件和监控光电二极管的至少一个第一连接表面基本垂直于要丝焊到第一连接面的引销的第二连接表面。
2.如权利要求1所述的半导体激光器,其特征在于,第一连接表面的连接位置和第二连接表面的连接位置大致位于与第一和第二连接表面垂直的同一平面上。
3.如权利要求1所述的半导体激光器,还包括:
一些金属线,它们形成在子固定件上,而且两个半导体激光元件分别模接合于它们上,其特征在于,
这些与半导体激光元件对应的金属线彼此绝缘。
4.如权利要求1所述的半导体激光器,还包括:
一些金属线,它们形成在子固定件上,而且两个半导体激光元件分别模接合于它们上,其特征在于,
从两个半导体激光元件中的至少一个的后端面上没有形成伸向监控光电二极管的金属线。
5.如权利要求1所述的半导体激光器,其特征在于,
引销端面是第二连接表面,以及
引销的端表面位于与管座表面相同的高度或低于管座表面的高度的地方。
6.如权利要求1所述的半导体激光器,其特征在于
管座提供有台阶部分,该台阶部分具有与子固定件要连接的表面平行但不等高的连接表面。
7.一种半导体激光器,包括:
管座,其提供有多个引销;
子固定件,其模接合于管座上,以及
半导体激光元件,其模接合在子固定件上,该半导体激光元件具有经过金属丝与引销电连接的电极,其特征在于,
管座提供有台阶部分,该台阶部分具有与子固定件的表面平行但不等高的连接表面。
8.一种半导体激光器的引线接合方法,该半导体激光器包括提供有多个引销的管座,子固定件,其安装在管座上,并且具有与监控光电整体形成的表面,以及两个半导体激光元件,这些元件模接合在子固定件上,并有能被监控光电二极管监控到的放射光,这种方法包括:
第一步,保持管座,使用于引导金属丝的毛细管的轴变得垂直于两个半导体激光元件和监控光电二极管的至少一个第一连接表面,连接金属丝的一端到第一个连接面;以及
第二步,在完成连接金属丝一端到第一连接表面以及连接金属丝的另一端到第二连接表面的操作后,绕垂直于金属丝的轴翻转管座,使得毛细管的轴垂直于引销的第二连接表面。
9.如权利要求8所述的半导体激光器的引线连接方法,其特征在于,
在第二步中的翻转管座的轴平行于大致相互垂直的第一和第二连接面的交线。
10.如权利要求8所述的半导体激光器的引线接合方法,其特征在于,
第一连接面的连接位置和第二连接面的连接位置位于大致垂直于第一和第二连接表面的同一平面内。
11.如权利要求8所述的半导体激光器的引线接合方法,其特征在于,
从在第二步中管座翻转所绕的轴到第一连接面的距离被设成与从管座翻转所绕的轴到第二连接面的距离相等。
12.如权利要求8所述的半导体激光器的引线接合方法,其特征在于,
在第一步骤后,通过在垂直于第一连接表面的方向上拉毛细管而从毛细管顶端拉出的金属丝的长度比从半导体激光元件到第一连接表面的连接位置的距离长。
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CN100405679C (zh) | 2008-07-23 |
US20030165167A1 (en) | 2003-09-04 |
US6784464B2 (en) | 2004-08-31 |
JP4074419B2 (ja) | 2008-04-09 |
US20010026991A1 (en) | 2001-10-04 |
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US6562693B2 (en) | 2003-05-13 |
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