GB2477458B - Multi-wavelength semiconductor laser device - Google Patents

Multi-wavelength semiconductor laser device

Info

Publication number
GB2477458B
GB2477458B GB1107789.8A GB201107789A GB2477458B GB 2477458 B GB2477458 B GB 2477458B GB 201107789 A GB201107789 A GB 201107789A GB 2477458 B GB2477458 B GB 2477458B
Authority
GB
United Kingdom
Prior art keywords
semiconductor laser
laser device
wavelength semiconductor
wavelength
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1107789.8A
Other versions
GB2477458A (en
GB201107789D0 (en
Inventor
Yuji Okura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2009138220A external-priority patent/JP5522977B2/en
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB201107789D0 publication Critical patent/GB201107789D0/en
Publication of GB2477458A publication Critical patent/GB2477458A/en
Application granted granted Critical
Publication of GB2477458B publication Critical patent/GB2477458B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H01L27/15—
    • H01L33/64—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4037—Edge-emitting structures with active layers in more than one orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
GB1107789.8A 2009-06-09 2010-04-23 Multi-wavelength semiconductor laser device Expired - Fee Related GB2477458B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009138220A JP5522977B2 (en) 2009-06-09 2009-06-09 Multi-wavelength semiconductor laser device
GB1006858.3A GB2470984B (en) 2009-06-09 2010-04-23 Multi-wavelength semiconductor laser device

Publications (3)

Publication Number Publication Date
GB201107789D0 GB201107789D0 (en) 2011-06-22
GB2477458A GB2477458A (en) 2011-08-03
GB2477458B true GB2477458B (en) 2012-03-07

Family

ID=44259577

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1107789.8A Expired - Fee Related GB2477458B (en) 2009-06-09 2010-04-23 Multi-wavelength semiconductor laser device
GB1112895.6A Expired - Fee Related GB2480025B (en) 2009-06-09 2010-04-23 Multi-wavelength semiconductor laser device

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1112895.6A Expired - Fee Related GB2480025B (en) 2009-06-09 2010-04-23 Multi-wavelength semiconductor laser device

Country Status (1)

Country Link
GB (2) GB2477458B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0803949A2 (en) * 1996-04-23 1997-10-29 Compagnie Industrielle Des Lasers Cilas Laser diode device mounted on semiconducting bars
US5828683A (en) * 1997-04-21 1998-10-27 The Regents Of The University Of California High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array
EP1038341A1 (en) * 1997-12-08 2000-09-27 Coherent, Inc. Bright diode-laser light-source
JP2002329893A (en) * 2001-05-02 2002-11-15 Kansai Tlo Kk LED surface light emitting device
US20070116070A1 (en) * 2005-11-22 2007-05-24 Nlight Photonics Corporation Modular diode laser assembly

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW346687B (en) * 1997-09-15 1998-12-01 Ind Tech Res Inst Package of semiconductor laser diode and compact disk with two-wavelength read/write head
JP4074419B2 (en) * 2000-03-14 2008-04-09 シャープ株式会社 Wire bonding method for semiconductor laser device
JP2006013436A (en) * 2004-05-26 2006-01-12 Sharp Corp Nitride semiconductor laser device, manufacturing method thereof, and assembly apparatus thereof
JP2007311680A (en) * 2006-05-22 2007-11-29 Sharp Corp Semiconductor laser device
JP2010251502A (en) * 2009-04-15 2010-11-04 Mitsubishi Electric Corp Multi-wavelength semiconductor laser device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0803949A2 (en) * 1996-04-23 1997-10-29 Compagnie Industrielle Des Lasers Cilas Laser diode device mounted on semiconducting bars
US5828683A (en) * 1997-04-21 1998-10-27 The Regents Of The University Of California High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array
EP1038341A1 (en) * 1997-12-08 2000-09-27 Coherent, Inc. Bright diode-laser light-source
JP2002329893A (en) * 2001-05-02 2002-11-15 Kansai Tlo Kk LED surface light emitting device
US20070116070A1 (en) * 2005-11-22 2007-05-24 Nlight Photonics Corporation Modular diode laser assembly

Also Published As

Publication number Publication date
GB2480025A (en) 2011-11-02
GB2477458A (en) 2011-08-03
GB201112895D0 (en) 2011-09-14
GB201107789D0 (en) 2011-06-22
GB2480025B (en) 2012-03-14

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 20130510

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20170423