GB2480025B - Multi-wavelength semiconductor laser device - Google Patents

Multi-wavelength semiconductor laser device

Info

Publication number
GB2480025B
GB2480025B GB1112895.6A GB201112895A GB2480025B GB 2480025 B GB2480025 B GB 2480025B GB 201112895 A GB201112895 A GB 201112895A GB 2480025 B GB2480025 B GB 2480025B
Authority
GB
United Kingdom
Prior art keywords
semiconductor laser
laser device
wavelength semiconductor
wavelength
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1112895.6A
Other versions
GB2480025A (en
GB201112895D0 (en
Inventor
Yuji Okura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2009138220A external-priority patent/JP5522977B2/en
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB201112895D0 publication Critical patent/GB201112895D0/en
Publication of GB2480025A publication Critical patent/GB2480025A/en
Application granted granted Critical
Publication of GB2480025B publication Critical patent/GB2480025B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4037—Edge-emitting structures with active layers in more than one orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
GB1112895.6A 2009-06-09 2010-04-23 Multi-wavelength semiconductor laser device Expired - Fee Related GB2480025B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009138220A JP5522977B2 (en) 2009-06-09 2009-06-09 Multi-wavelength semiconductor laser device
GB1006858.3A GB2470984B (en) 2009-06-09 2010-04-23 Multi-wavelength semiconductor laser device

Publications (3)

Publication Number Publication Date
GB201112895D0 GB201112895D0 (en) 2011-09-14
GB2480025A GB2480025A (en) 2011-11-02
GB2480025B true GB2480025B (en) 2012-03-14

Family

ID=44259577

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1112895.6A Expired - Fee Related GB2480025B (en) 2009-06-09 2010-04-23 Multi-wavelength semiconductor laser device
GB1107789.8A Expired - Fee Related GB2477458B (en) 2009-06-09 2010-04-23 Multi-wavelength semiconductor laser device

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1107789.8A Expired - Fee Related GB2477458B (en) 2009-06-09 2010-04-23 Multi-wavelength semiconductor laser device

Country Status (1)

Country Link
GB (2) GB2480025B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6188132B1 (en) * 1997-09-15 2001-02-13 Industrial Technology Research Institute Two-wavelength semiconductor laser diode package for use on the read/write head of an optical drive capable of reading different types of optical discs
US20030165167A1 (en) * 2000-03-14 2003-09-04 Sharp Kabushiki Kaisha Semiconductor laser device and wire bonding method capable of easily performing reliable wire bonding
US20050265413A1 (en) * 2004-05-26 2005-12-01 Yuhzoh Tsuda Nitride semiconductor laser device
JP2007311680A (en) * 2006-05-22 2007-11-29 Sharp Corp Semiconductor laser device
US20100265702A1 (en) * 2009-04-15 2010-10-21 Mitsubishi Electric Corporation Multi-wavelength semiconductor laser device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2130221C1 (en) * 1996-04-23 1999-05-10 Акционерное общество закрытого типа "Энергомаштехника" Laser diode array
US5828683A (en) * 1997-04-21 1998-10-27 The Regents Of The University Of California High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array
US6151342A (en) * 1997-12-08 2000-11-21 Coherent, Inc. Bright diode-laser light-source
JP2002329893A (en) * 2001-05-02 2002-11-15 Kansai Tlo Kk Led surface light emission device
US7436868B2 (en) * 2005-11-22 2008-10-14 Nlight Photonics Corporation Modular diode laser assembly

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6188132B1 (en) * 1997-09-15 2001-02-13 Industrial Technology Research Institute Two-wavelength semiconductor laser diode package for use on the read/write head of an optical drive capable of reading different types of optical discs
US20030165167A1 (en) * 2000-03-14 2003-09-04 Sharp Kabushiki Kaisha Semiconductor laser device and wire bonding method capable of easily performing reliable wire bonding
US20050265413A1 (en) * 2004-05-26 2005-12-01 Yuhzoh Tsuda Nitride semiconductor laser device
JP2007311680A (en) * 2006-05-22 2007-11-29 Sharp Corp Semiconductor laser device
US20100265702A1 (en) * 2009-04-15 2010-10-21 Mitsubishi Electric Corporation Multi-wavelength semiconductor laser device

Also Published As

Publication number Publication date
GB201107789D0 (en) 2011-06-22
GB2477458A (en) 2011-08-03
GB2480025A (en) 2011-11-02
GB2477458B (en) 2012-03-07
GB201112895D0 (en) 2011-09-14

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 20130510

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20170423