GB201107789D0 - Multi-wavelength semiconductor laser device - Google Patents
Multi-wavelength semiconductor laser deviceInfo
- Publication number
- GB201107789D0 GB201107789D0 GBGB1107789.8A GB201107789A GB201107789D0 GB 201107789 D0 GB201107789 D0 GB 201107789D0 GB 201107789 A GB201107789 A GB 201107789A GB 201107789 D0 GB201107789 D0 GB 201107789D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor laser
- laser device
- wavelength semiconductor
- wavelength
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4037—Edge-emitting structures with active layers in more than one orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009138220A JP5522977B2 (en) | 2009-06-09 | 2009-06-09 | Multi-wavelength semiconductor laser device |
GB1006858.3A GB2470984B (en) | 2009-06-09 | 2010-04-23 | Multi-wavelength semiconductor laser device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201107789D0 true GB201107789D0 (en) | 2011-06-22 |
GB2477458A GB2477458A (en) | 2011-08-03 |
GB2477458B GB2477458B (en) | 2012-03-07 |
Family
ID=44259577
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1112895.6A Expired - Fee Related GB2480025B (en) | 2009-06-09 | 2010-04-23 | Multi-wavelength semiconductor laser device |
GB1107789.8A Expired - Fee Related GB2477458B (en) | 2009-06-09 | 2010-04-23 | Multi-wavelength semiconductor laser device |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1112895.6A Expired - Fee Related GB2480025B (en) | 2009-06-09 | 2010-04-23 | Multi-wavelength semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB2480025B (en) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2130221C1 (en) * | 1996-04-23 | 1999-05-10 | Акционерное общество закрытого типа "Энергомаштехника" | Laser diode array |
US5828683A (en) * | 1997-04-21 | 1998-10-27 | The Regents Of The University Of California | High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array |
TW346687B (en) * | 1997-09-15 | 1998-12-01 | Ind Tech Res Inst | Package of semiconductor laser diode and compact disk with two-wavelength read/write head |
US6151342A (en) * | 1997-12-08 | 2000-11-21 | Coherent, Inc. | Bright diode-laser light-source |
JP4074419B2 (en) * | 2000-03-14 | 2008-04-09 | シャープ株式会社 | Wire bonding method for semiconductor laser device |
JP2002329893A (en) * | 2001-05-02 | 2002-11-15 | Kansai Tlo Kk | Led surface light emission device |
JP2006013436A (en) * | 2004-05-26 | 2006-01-12 | Sharp Corp | Nitride semiconductor laser device, its manufacturing method, and its assembling device |
US7436868B2 (en) * | 2005-11-22 | 2008-10-14 | Nlight Photonics Corporation | Modular diode laser assembly |
JP2007311680A (en) * | 2006-05-22 | 2007-11-29 | Sharp Corp | Semiconductor laser device |
JP2010251502A (en) * | 2009-04-15 | 2010-11-04 | Mitsubishi Electric Corp | Multi-wavelength semiconductor laser device |
-
2010
- 2010-04-23 GB GB1112895.6A patent/GB2480025B/en not_active Expired - Fee Related
- 2010-04-23 GB GB1107789.8A patent/GB2477458B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2477458A (en) | 2011-08-03 |
GB201112895D0 (en) | 2011-09-14 |
GB2477458B (en) | 2012-03-07 |
GB2480025A (en) | 2011-11-02 |
GB2480025B (en) | 2012-03-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
746 | Register noted 'licences of right' (sect. 46/1977) |
Effective date: 20130510 |
|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20170423 |