JP2002329893A - Led surface light emission device - Google Patents
Led surface light emission deviceInfo
- Publication number
- JP2002329893A JP2002329893A JP2001135115A JP2001135115A JP2002329893A JP 2002329893 A JP2002329893 A JP 2002329893A JP 2001135115 A JP2001135115 A JP 2001135115A JP 2001135115 A JP2001135115 A JP 2001135115A JP 2002329893 A JP2002329893 A JP 2002329893A
- Authority
- JP
- Japan
- Prior art keywords
- led
- light emitting
- slope
- emitting device
- surface light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光ダイオード
（LED）チップを用いた発光装置、特に、複数のLEDチッ
プを基板上に載置した面発光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device using a light emitting diode (LED) chip, and more particularly to a surface light emitting device having a plurality of LED chips mounted on a substrate.
【０００２】[0002]
【従来の技術】青色発光可能な窒化ガリウム系LED（GaN
-LED）の開発により、照明装置としてのLEDの使用が注
目されつつある。照明装置としてみた場合、白熱電球や
蛍光灯等の従来の照明装置と比較すると窒化ガリウム系
LEDは、(a)素子寿命が実用上無限に近く長い、(b)エネ
ルギ効率が高く、熱放出が少ない、(c)光度が高い、(d)
調光性に優れている（任意の色合いを出すことができ
る）、(e)素子単体が非常に小さいため、任意の形状に
実装することが可能である、等多くの特長を持つ。2. Description of the Related Art Gallium nitride based LEDs (GaN) capable of emitting blue light
-LED), attention is being paid to the use of LEDs as lighting devices. When viewed as a lighting device, gallium nitride-based lamps are compared to conventional lighting devices such as incandescent lamps and fluorescent lamps.
LEDs have (a) a long lifetime of practically infinite elements, (b) high energy efficiency and low heat emission, (c) high luminosity, and (d)
It has many features, such as excellent dimming properties (can produce any color), and (e) it can be mounted in any shape because the element itself is very small.
【０００３】窒化ガリウム系LEDチップ１０は図１に示
すように、基本的にはサファイア等の基板１１上に、In
xGa1-xN活性層（発光層）１４を挟んでn-GaN負極層１３
とp-GaN正極層１６を積層した構造を有する。なお、活
性層１４とp-GaN層１６の間に、n-GaN層１３からの電子
のオーバーフローを抑えるため、p-AlyGa1-yN層１５（y
は通常0.2程度）を設けることが多い。As shown in FIG. 1, a gallium nitride-based LED chip 10 is basically provided on a substrate 11 of sapphire or the like.
n-GaN negative electrode layer 13 with x Ga 1-x N active layer (light emitting layer) 14 interposed
And a p-GaN positive electrode layer 16. In addition, between the active layer 14 and the p-GaN layer 16, in order to suppress the overflow of electrons from the n-GaN layer 13, the p-Al y Ga 1-y N layer 15 (y
Is usually about 0.2).
【０００４】このLEDチップ１０自体は上記(e)に挙げた
ように非常に小さく、約0.3mm角程度でしかない。しか
し、それに電力を供給するためには適当なリード線を接
続する必要がある。そのため、現在使われているLED２
０は図２に示すように、取り扱いが可能な程度の大きさ
である約1〜5mm程度の透明樹脂或いはガラス２１に封入
されている（これを単体LEDユニットと呼ぶ）。封入部
２１の頂部は略半球状となっており、LEDチップ１０か
らの光を所定の範囲に収束するレンズの作用を果たす。
また、１対のピン２２がその反対側に固定され、それら
は内部においてLEDチップ１０の両極に接続されてい
る。なお、青色LEDから白色光を得る場合は、青色LEDチ
ップ１０の表面に黄色蛍光体を覆う。The LED chip 10 itself is very small as described in (e) above, and is only about 0.3 mm square. However, to supply power to it, it is necessary to connect appropriate leads. Therefore, LED2 currently used
As shown in FIG. 2, the reference numeral 0 is enclosed in a transparent resin or glass 21 having a size of about 1 to 5 mm which can be handled (this is called a single LED unit). The top of the enclosing portion 21 has a substantially hemispherical shape, and functions as a lens that converges the light from the LED chip 10 to a predetermined range.
Also, a pair of pins 22 are fixed on the opposite side, and they are internally connected to both poles of the LED chip 10. When obtaining white light from the blue LED, the surface of the blue LED chip 10 is covered with a yellow phosphor.
【０００５】[0005]
【発明が解決しようとする課題】大光量を得るために、
図２に示すような単体LEDユニット２０を多数２次元的
に配列して面発光装置を構成することは、既にLED照明
パネルとして広く用いられている。また、それらを配列
する基板を凹面状にした集中照明装置（図３）も、検査
等の特定用途の照明装置として市販されている。SUMMARY OF THE INVENTION In order to obtain a large amount of light,
Arranging a large number of single LED units 20 two-dimensionally as shown in FIG. 2 to form a surface light emitting device has already been widely used as an LED lighting panel. In addition, a centralized lighting device (FIG. 3) having a concave substrate on which they are arranged is also commercially available as a lighting device for specific use such as inspection.
【０００６】しかし、上記の通りLEDチップ１０自体の
大きさが0.3mm角程度であるのに対し、それを封入した
単体LEDユニット２０はその100倍程の面積をもつため、
それを配列した面発光装置の集積度はかなり低いものと
なる。そのため、上記(c)の光度が高いという特長を生
かすことができず、発光装置自体が嵩高く且つ重いもの
となってしまう。However, while the size of the LED chip 10 itself is about 0.3 mm square as described above, the unitary LED unit 20 enclosing the LED chip 10 has an area about 100 times that of the LED chip 10.
The degree of integration of the surface light-emitting device in which it is arranged is considerably low. Therefore, the feature of (c) having a high luminous intensity cannot be utilized, and the light emitting device itself becomes bulky and heavy.
【０００７】複数のLEDチップを２次元的又は１次元的
に密に配設しようとする場合に問題となるのは、それら
に対する電力の供給と、それらから発生する熱の放出で
ある。[0007] When a plurality of LED chips are to be densely arranged two-dimensionally or one-dimensionally, there is a problem in supplying power to them and releasing heat generated from them.
【０００８】両問題は密接に関連する。すなわち、LED
をON/OFF表示等の信号灯ではなく照明として使用する場
合、各LEDチップの電力消費量自体も大きくなる上、そ
れを複数個使用する場合には全体としての電力消費量も
相当なものとなる。具体的には、現在一般に使用されて
いる白熱電球や蛍光灯の消費電力である数十〜百Ｗ以上
となる。基板の表面に多数のLEDチップを高集積度で配
設しようとした場合、従来の技術では基板表面にフォト
リソグラフィーや印刷等で薄い金属膜を設けることとな
るが、そのような基板上の薄い金属膜配線では先述の大
きな電力を供給することは不可能である。[0008] Both problems are closely related. That is, LED
When LED is used as lighting instead of signal light such as ON / OFF display etc., the power consumption of each LED chip itself becomes large, and when using multiple LED chips, the power consumption as a whole becomes considerable . Specifically, the power consumption is several tens to hundreds W or more, which is the power consumption of incandescent lamps and fluorescent lamps that are currently generally used. In the case where a large number of LED chips are to be arranged on the surface of the substrate with a high degree of integration, in the conventional technology, a thin metal film is provided on the substrate surface by photolithography or printing. It is impossible to supply the above-mentioned large electric power with the metal film wiring.
【０００９】また、そのような大電力を消費するという
ことは、その相当部分のエネルギーが熱として放出され
ることを意味する。現在のLEDの発光効率は最大でも青
色LEDで15%、赤色LEDで50%程度であるため、LED発光装
置の大きさを数〜数十mm角とすると、それだけの小面積
から数十Ｗ以上の熱が発生することとなり、その発熱密
度は相当なものとなる。従って、適切な放熱対策を考慮
すること無しには、LED発光装置を実用化することはで
きない。Consumption of such a large amount of power means that a substantial part of the energy is released as heat. At present, the luminous efficiency of LEDs is at most 15% for blue LEDs and about 50% for red LEDs. Is generated, and the heat generation density becomes considerable. Therefore, the LED light emitting device cannot be put to practical use without taking appropriate heat dissipation measures into consideration.
【００１０】本発明はこれらの課題のうち、電力供給に
関する課題を解決するために成されたものであり、その
目的とするところは、大光量を発する単数又は複数のLE
Dに対しても十分な電力を供給することのできる構成を
有するLED面発光装置を提供することにある。SUMMARY OF THE INVENTION The present invention has been made to solve the problem concerning power supply among these problems, and an object of the present invention is to provide one or more LEs emitting a large amount of light.
An object of the present invention is to provide an LED surface light emitting device having a configuration capable of supplying sufficient power to D.
【００１１】[0011]
【課題を解決するための手段】上記課題を解決するため
に成された本発明に係るLED面発光装置は、少なくとも
１組の、絶縁層を介して設けられた２枚の導電層を含む
積層体に斜面を設け、該斜面の絶縁層を挟む両導電層間
にLED（チップ）を設けたことを特徴とするものであ
る。An LED surface light emitting device according to the present invention, which has been made to solve the above-mentioned problems, has a laminated structure including at least one set of two conductive layers provided via an insulating layer. An inclined surface is provided on the body, and an LED (chip) is provided between both conductive layers sandwiching the insulating layer on the inclined surface.
【００１２】[0012]
【発明の実施の形態】最小限の構成では、積層体は［導
電層−絶縁層−導電層］の３層構成となる。この積層体
を厚さ方向に斜めに切断し、或いは穴を開けることによ
り、断面又は周囲に斜面を現出させる。この斜面の［導
電層−絶縁層−導電層］間にLEDチップを設け、両導電
層からLEDチップに給電する。この斜面へのLEDチップの
載置の形態に関しては、LEDチップが大きくて両導電層
に届く場合と、LEDチップ自体は小さくて両導電層には
届かないが、リード線等により両導電層から給電を受け
る場合の双方の場合があるが、本発明ではいずれの形態
でも構わない。BEST MODE FOR CARRYING OUT THE INVENTION In a minimum structure, a laminate has a three-layer structure of [conductive layer-insulating layer-conductive layer]. The laminate is cut obliquely in the thickness direction or a hole is formed to make a cross section or a slope appear on the periphery. An LED chip is provided between the [conductive layer-insulating layer-conductive layer] on this slope, and power is supplied to the LED chip from both conductive layers. Regarding the form of mounting the LED chip on this slope, the case where the LED chip is large and reaches both conductive layers and the case where the LED chip itself is small and does not reach both conductive layers, There are both cases where power is supplied, but in the present invention, either form is acceptable.
【００１３】斜面には１個のLEDチップだけを設けても
よいが、複数のLEDチップを載置することにより、本発
明の効果はより良く発揮される。また、例えば［導電層
−絶縁層−導電層−絶縁層−導電層］のように、積層体
中において絶縁層と導電層とを多数繰り返すことによ
り、より多くのLEDチップを載置することができるよう
になる。Although only one LED chip may be provided on the slope, the effect of the present invention is better exhibited by mounting a plurality of LED chips. Further, by repeating a large number of insulating layers and conductive layers in the laminate, for example, [conductive layer-insulating layer-conductive layer-insulating layer-conductive layer], it is possible to mount more LED chips. become able to.
【００１４】積層体に斜面を形成する際、或いは積層体
に穴を開けてその周囲を斜面とする場合、その斜面の形
状としては平面（円錐面）に限られず、二次曲面（楕円
面、放物面、双曲面）等の曲面としてもよい。特に、斜
面を球面とすることにより、そこに載置したLEDチップ
から発せられた光は全てその球面の中心に向かうことに
なるため、所定の焦点に集光可能なLED面発光装置とす
ることができる。When a slope is formed in the laminate, or when a hole is made in the laminate and the periphery thereof is formed as a slope, the shape of the slope is not limited to a plane (conical surface), but may be a quadratic curved surface (elliptical surface, It may be a curved surface such as a paraboloid or a hyperboloid. In particular, by making the slope a spherical surface, all the light emitted from the LED chip mounted thereon goes to the center of the spherical surface. Can be.
【００１５】本発明においては、積層体を構成する導電
層と絶縁層の材質に特に限定は無く、一般に用いられて
いる銅、アルミニウム、銀、プラチナ等の金属導体、及
びプラスチック、セラミック（サファイア、窒化アルミ
ニウム等）等の絶縁体を使用することができる。なお、
ダイヤモンドとこれら金属材料の接合に関しては、電着
技術により可能であり、既にダイヤモンドを用いた工具
作製技術の中で用いられている。In the present invention, the materials of the conductive layer and the insulating layer constituting the laminate are not particularly limited, and generally used metal conductors such as copper, aluminum, silver, and platinum, and plastics, ceramics (sapphire, An insulator such as aluminum nitride) can be used. In addition,
The bonding of diamond and these metal materials is possible by electrodeposition technology, and is already used in tool fabrication technology using diamond.
【００１６】好ましい例として、絶縁層にダイヤモンド
（結晶ダイヤモンド、多結晶ダイヤモンド）又はダイヤ
モンドライクカーボンを用いる例を挙げることができ
る。ダイヤモンドは絶縁体であると同時に熱伝導が良好
であるという特長を持つため、上記の放熱対策の観点か
ら更に優れたものとなる。As a preferred example, there can be mentioned an example in which diamond (crystalline diamond, polycrystalline diamond) or diamond-like carbon is used for the insulating layer. Since diamond has the feature that it is an insulator and has good thermal conductivity, it is more excellent from the viewpoint of the above-mentioned heat dissipation measures.
【００１７】放熱という点に関しては、導電層や絶縁層
による固体伝熱放熱ばかりではなく、積層体に貫通孔を
設けて周辺大気へ逃がすということも考慮すべきであ
る。この場合、自然対流或いは強制空冷等の方法によ
り、放熱の実効を挙げることができる。Regarding the heat dissipation, not only the solid-state heat transfer and heat dissipation by the conductive layer and the insulating layer, but also the provision of a through hole in the laminated body to escape to the surrounding atmosphere should be considered. In this case, effective heat dissipation can be achieved by a method such as natural convection or forced air cooling.
【００１８】[0018]
【発明の効果】本発明に係るLED面発光装置では、LEDチ
ップに電力を供給するための給電線が面状（層状）とな
っているため、十分な電流容量を確保することができ
る。このため、１枚の基板上に多数のLEDチップを載置
しても、各LEDチップに十分な電力を確実に供給するこ
とができるとともに、給電線の自己発熱が最小限に抑え
られる。In the LED surface light emitting device according to the present invention, since the power supply line for supplying power to the LED chip is planar (layered), a sufficient current capacity can be secured. Therefore, even when a large number of LED chips are mounted on one substrate, sufficient power can be reliably supplied to each LED chip, and the self-heating of the power supply line is minimized.
【００１９】また、給電線は良熱伝導体でもあることか
ら、LEDチップで発生した熱をその導電層を通じてLEDチ
ップの近傍から逃がす作用も果たす。このため、LEDチ
ップの発光効率の低下及びLEDチップの経時劣化を防止
することができる。Further, since the power supply line is also a good heat conductor, it also has the function of releasing heat generated in the LED chip from the vicinity of the LED chip through its conductive layer. For this reason, it is possible to prevent a decrease in the luminous efficiency of the LED chip and a deterioration with time of the LED chip.
【００２０】[0020]
【実施例】本発明の第１の実施例である平面斜面形LED
面発光装置を図４に示す。本実施例では、積層体４１に
は本発明の最小構成である［導電層−絶縁層−導電層］
（４２−４３−４４）の３層に加え、その最上面及び最
下面に絶縁体保護膜４５、４６が設けられている。同図
(a)及び(b)に示すように、LEDチップ４７は絶縁層４３
の部分に接着剤等で貼付され、その両側の導電層４２、
４４とLEDチップ４７との間にはリード線４８が架線さ
れる。なお、LEDチップ４７がSiCやGaN等の導電性基板
上に形成されたものである場合は、同図(c)に示すよう
に、その導電性基板を積層体４１の導電層上に置き（イ
ンジウム等の金属で接着する）、他方の電極のみを他方
の導電層にリード線で接続する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment A flat inclined LED according to the present invention.
FIG. 4 shows a surface emitting device. In the present embodiment, the laminated body 41 has the minimum configuration of the present invention [conductive layer-insulating layer-conductive layer].
In addition to the three layers (42-43-44), insulator protective films 45 and 46 are provided on the uppermost and lowermost surfaces thereof. Same figure
As shown in (a) and (b), the LED chip 47 is
Are adhered with an adhesive or the like, and the conductive layers 42 on both sides thereof are
A lead wire 48 is connected between the LED chip 47 and the LED chip 47. In the case where the LED chip 47 is formed on a conductive substrate such as SiC or GaN, the conductive substrate is placed on the conductive layer of the laminate 41 as shown in FIG. Bonding with a metal such as indium), and only the other electrode is connected to the other conductive layer by a lead wire.
【００２１】図５に第２の実施例である球面形LED面発
光装置５０を示す。このように、積層体５１に穴５２を
設け、その斜面を球面としてその上に多数のLEDチップ
５３を設けることにより、全てのLEDチップ５３からの
光を１点（Ｆ）に集中することができるようになる。FIG. 5 shows a spherical LED surface light emitting device 50 according to a second embodiment. In this way, by providing the holes 52 in the laminated body 51 and making the inclined surface thereof a spherical surface and providing a large number of LED chips 53 thereon, light from all the LED chips 53 can be concentrated at one point (F). become able to.
【００２２】図６に第３の実施例である冷却孔付LED面
発光装置６０を示す。第２の実施例と同様、積層体６１
に穴６２を設け、その斜面（本実施例では円錐斜面）に
多数のLEDチップ６３を設けたものであるが、本実施例
ではそれに加え、放熱用の貫通孔６４を多数、斜面に設
けている。これにより、多数のLEDチップ６３から放出
される熱は効果的に本発光装置６０から外部に放出さ
れ、LEDチップ６３は温度が上がることもなく、高効率
の発光を継続することができる。FIG. 6 shows an LED surface light emitting device 60 with cooling holes according to a third embodiment. As in the second embodiment, the laminate 61
In this embodiment, a large number of LED chips 63 are provided on a slope (a conical slope in this embodiment). In this embodiment, a large number of through holes 64 for heat radiation are provided on the slope. I have. Thus, the heat emitted from the many LED chips 63 is effectively emitted from the light emitting device 60 to the outside, and the LED chips 63 can continue to emit light with high efficiency without increasing the temperature.
【００２３】このようなLEDチップ載置用の斜面（図４
の例）、LEDチップ載置用の穴５２、６２（図５、図６
の例）、及び冷却孔６４（図６の例）の作製は切削等に
より機械的に行うこともできるが、加工レーザ（例え
ば、Ｎｄ：ＹＡＧの第３〜第５高調波レーザ：波長355n
m、266nm、213nm）を用いることもできる。この場合、
図４又は図６のように斜面が平面的である場合には図７
(a)に示すように斜面に沿って積層体７１をレーザカッ
トするのが効率が良いが、図５のように斜面が複雑な曲
面状である場合には、図７(b)に示すように積層体７１
の面に垂直な方向からレーザビーム７２を投入し、その
照射時間又は照射パワーを変化させることにより堀り込
み深さを変えるという加工方法をとることができる。な
お、図７(b)において、積層体７１とレーザービーム７
２は相対的に移動させればよく、一般的には積層体７１
の方を移動させることになる。The slope for mounting such an LED chip (FIG. 4)
), Holes 52, 62 for mounting LED chips (FIGS. 5, 6)
6) and the cooling hole 64 (the example in FIG. 6) can be mechanically formed by cutting or the like. However, a processing laser (for example, third to fifth harmonic lasers of Nd: YAG: wavelength 355n)
m, 266 nm, 213 nm) can also be used. in this case,
When the slope is flat as shown in FIG. 4 or FIG.
It is efficient to laser-cut the laminate 71 along the slope as shown in FIG. 7A, but if the slope is a complicated curved surface as shown in FIG. 5, as shown in FIG. 7B. Laminated body 71
The laser beam 72 is applied from a direction perpendicular to the surface, and the engraving depth can be changed by changing the irradiation time or the irradiation power. In FIG. 7B, the laminate 71 and the laser beam 7
2 may be relatively moved, and in general, the laminate 71
Will be moved.
【図１】 窒化ガリウム系LEDチップの概略構成図。FIG. 1 is a schematic configuration diagram of a gallium nitride-based LED chip.
【図２】 砲弾型単体LEDユニットの構成図。FIG. 2 is a configuration diagram of a shell type single LED unit.
【図３】 多数の砲弾型単体LEDユニットを用いた集中
照明装置の斜視図。FIG. 3 is a perspective view of a centralized lighting device using a large number of bullet-type single LED units.
【図４】 本発明の第１の実施例であるLED面発光装置
の構造を模式的に示す斜視図(a)、及び断面図(b)。FIGS. 4A and 4B are a perspective view and a sectional view schematically showing the structure of an LED surface light emitting device according to a first embodiment of the present invention.
【図５】 本発明の第２の実施例であるLED面発光装置
の構造を模式的に示す斜視図(a)、及び断面図(b)。FIG. 5 is a perspective view (a) and a cross-sectional view (b) schematically showing the structure of an LED surface light emitting device according to a second embodiment of the present invention.
【図６】 本発明の第３の実施例であるLED面発光装置
の構造を模式的に示す斜視図(a)、及び断面図(b)。FIG. 6 is a perspective view (a) and a cross-sectional view (b) schematically showing the structure of an LED surface light emitting device according to a third embodiment of the present invention.
【図７】 本発明に係るLED面発光装置のレーザによる
製造方法の２例を示す説明図。FIG. 7 is an explanatory view showing two examples of a method for manufacturing an LED surface light-emitting device using a laser according to the present invention.
４０、５０、６０…LED発光装置 ４１、５１、６１、７１…積層体 ４２…導電層 ４３…絶縁層 ４５…保護膜 ４７、５３、６３…LEDチップ ４８…リード線 ５２…穴 ６４…冷却孔 ７２…レーザビーム 40, 50, 60 ... LED light emitting device 41, 51, 61, 71 ... laminate 42 ... conductive layer 43 ... insulating layer 45 ... protective film 47, 53, 63 ... LED chip 48 ... lead wire 52 ... hole 64 ... cooling hole 72 ... Laser beam
───────────────────────────────────────────────────── フロントページの続き (72)発明者 川上 養一 滋賀県草津市下笠町665−６ (72)発明者 藤田 茂夫 京都府京都市伏見区桃山町島津47−35 (72)発明者 森 勇介 大阪府交野市私市８−16−９ (72)発明者 佐々木 孝友 大阪府吹田市山田西２−８ Ａ９−310 Ｆターム(参考） 5F041 AA04 AA33 CA04 CA12 CA40 DA07 DA13 DA19 DA35 DA92 DB08 DC08 DC22 DC66 DC83 FF06 FF11 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yoichi Kawakami 665-6 Shimogasa-cho, Kusatsu-shi, Shiga (72) Inventor Shigeo Fujita 47-35, Shimadzu, Momoyama-cho, Fushimi-ku, Kyoto, Kyoto (72) Yusuke Mori, inventor 8-16-9 Private City, Katano-shi, Osaka (72) Inventor Takatomo Sasaki 2-8, Yamadanishi, Suita-shi, Osaka A9-310 F-term (reference) 5F041 AA04 AA33 CA04 CA12 CA40 DA07 DA13 DA19 DA35 DA92 DB08 DC08 DC22 DC66 DC83 FF06 FF11
Claims (7)
られた２枚の導電層を含む積層体に斜面を設け、該斜面
の絶縁層を挟む両導電層間に発光ダイオードチップを設
けたことを特徴とするLED面発光装置。1. A laminated body including at least one set of two conductive layers provided with an insulating layer interposed therebetween is provided with a slope, and a light emitting diode chip is provided between both conductive layers sandwiching the insulating layer on the slope. LED surface light emitting device characterized by the above.
られた２枚の導電層を含む積層体に、少なくとも一部を
斜面とした穴を設け、該斜面の絶縁層を挟む両導電層間
に発光ダイオードチップを設けたことを特徴とするLED
面発光装置。2. A laminated body including at least one set of two conductive layers provided with an insulating layer interposed therebetween, wherein a hole having at least a part thereof as a slope is provided, and both conductive layers sandwiching the slope of the insulating layer are provided. LED equipped with a light emitting diode chip
Surface emitting device.
設けたことを特徴とする請求項１又は２のいずれかに記
載のLED面発光装置。3. The LED surface light emitting device according to claim 1, wherein a plurality of light emitting diode chips are provided on the slope.
する上記組を複数備えることを特徴とする請求項１〜３
のいずれかに記載のLED面発光装置。4. The laminate according to claim 1, wherein said laminate comprises a plurality of said sets sharing an adjacent set of conductive layers.
The LED surface light-emitting device according to any one of the above.
求項１〜４のいずれかに記載のLED面発光装置。5. The LED surface light emitting device according to claim 1, wherein said inclined surface is a spherical surface.
とする請求項１〜５のいずれかに記載のLED面発光装
置。6. The LED surface light emitting device according to claim 1, wherein the insulating layer is made of diamond.
特徴とする請求項１〜６のいずれかに記載のLED面発光
装置。7. The LED surface light emitting device according to claim 1, wherein a heat radiation through hole is provided in the laminate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001135115A JP2002329893A (en) | 2001-05-02 | 2001-05-02 | Led surface light emission device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001135115A JP2002329893A (en) | 2001-05-02 | 2001-05-02 | Led surface light emission device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002329893A true JP2002329893A (en) | 2002-11-15 |
Family
ID=18982646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001135115A Pending JP2002329893A (en) | 2001-05-02 | 2001-05-02 | Led surface light emission device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002329893A (en) |
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